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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 1 ROBUSPIC Workshop ESSDERC ’06 – Montreux, Switzerland Friday 22 nd of September

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Page 1: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 1

ROBUSPIC Workshop

ESSDERC ’06 – Montreux, SwitzerlandFriday 22nd of September

Page 2: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2

ESSDERC ’06 – Montreux, SwitzerlandFriday 22nd of September

Vladimir Ceperic, Adrijan Baric - University of Zagreb, CroatiaRenaud Gillon - AMI Semiconductors, Belgium

Page 3: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 3

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 4: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 4

IntroductionIntroductionIntroduction

We would like to achieve:

• Deal with EMC issues in a simple way • Use conducted EMC standards

• Achieve good agreement between simulations and measurements !!!

Page 5: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 5

IntroductionIntroductionIntroduction

Conducted EMC standards:• IEC 61967-4:

“Integrated circuits – Measurements of electromagnetic emissions, 150 kHz to 1 GHz – Part 4: Measurements of conducted emissions – 1 Ohm/150 Ohm direct coupling method”

• IEC 62132-4: ”Integrated circuits - Measurement of radiated immunity – Part 4: Direct RF power injection method”

Page 6: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 6

IntroductionIntroductionIntroduction

• IEC 61967-4: conducted electromagnetic emissions(to check EMISSIONS)

Page 7: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 7

IntroductionIntroductionIntroduction

• IEC 62132-4: direct RF power injection method (to check IMMUNITY)

Page 8: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 8

IntroductionIntroductionIntroduction

To achieve good agreement between simulations and measurements we deal with the following models:

• PCB tracks (including connectors)• SMD components on a PCB• Chip packaging (lead-frame, bond-wires, ...)• Chip, i.e. circuit itself (including parasitics)

e.g.

Page 9: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 9

IntroductionIntroductionIntroduction

Page 10: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 10

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 11: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 11

PCB modellingPCB modellingPCB modelling

Various approaches:1. Simulate by using 3D EM field solvers (or 2D and a

half EM field solvers) hmmmm?!?!?!2. Build PCB, measure and model hmmmm?!?!?!

Page 12: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 12

PCB modellingPCB modellingPCB modelling

• Ansoft Q3D Extractor: it generates a Spectre compatible netlist

next slide

Page 13: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 13

PCB modellingPCB modellingPCB modelling

EM field solver

Not a bad solution: • It just:

– takes substantial time– does not necessarily get to the solution– does not necessarily produce accurate result

• Problems:– vias are generally a huge problem because of the number of

nodes that they generate during discretization of the simulated space (PCB trace is a relatively small issue)

Page 14: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 14

PCB modellingPCB modellingPCB modelling

Build measure model

• This approach seems to be simpler• It may also include the influence of SMD components

(something that is simply hard to estimate exclusively from simulations!!!) we’ll deal with this issue later

(in Section 3)• PCB can be built, measured and modelled

concurrently while designing a chip/circuit (it is not necessary to wait for the chip to be processed!!!)

Page 15: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 15

PCB modellingPCB modellingPCB modelling

Modelling of a short and medium line on a PCB

• Various lines have been produced and measured to model SMD components

Page 16: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 16

PCB modellingPCB modellingPCB modelling

• Short line (15 mm between SMA connectors)

Page 17: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 17

PCB modellingPCB modellingPCB modelling

• Medium line (30 mm between SMA connectors)

Page 18: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 18

PCB modellingPCB modellingPCB modelling

• Long line (147 mm between SMA connectors)

Page 19: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 19

PCB modellingPCB modellingPCB modelling

• The model parameters are obtained by simultaneous optimization of model parameters for all three lines (short, medium, long)

• Model parameters of the mtline (Spectre model):r = 0.073 Ohm/ml = 2.67 uH/mc = 13.38 pF/mg = 8.83e-14 S/mrskin = 3.75e-7 Ohm/(m*sqrt(f))gdloss = 2.17e-12 S/(m*Hz)

(rskin and gdloss model skin effect resistance and dielectric loss conductance as a function of frequency)

Page 20: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 20

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 21: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 21

SMD componentsSMD componentsSMD components

• SMD components are modelled based on the measurements of various structures/PCBs and by assuming (or not) various simplifications

Page 22: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 22

SMD componentsSMD componentsSMD components

• Approach 1 includes: – Modelling of PCB traces by Ansoft Q3D (3D/2D quasi-static

EM field solver that produces a Spectre sub-circuit netlist)– Measurement of the PCB– Modelling through the optimization procedure in order to

extract the equivalent circuit elements of the SMD components on the PCB

(this is an obviously slightly confusing approach)

Page 23: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 23

SMD componentsSMD componentsSMD components

• Approach 1: - PCB traces are modelled by an EM field solver

Page 24: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 24

SMD componentsSMD componentsSMD components

• Approach 1:- various SMD components are modelled by using the following equivalent circuits

Page 25: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 25

SMD componentsSMD componentsSMD components

• Approach 1 example:- the network consisting of two resistors used in conducted EMC tests is shown below

- Two measurements are performed: the first for P2 left OPEN, and the second for P2 shorted to the ground

Page 26: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 26

SMD componentsSMD componentsSMD components

• Approach 1 example:- based on 2 measurements the parameters of the equivalent circuit models for R1 and R2 are extracted

Page 27: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 27

SMD componentsSMD componentsSMD components

• Approach 1 example:- the equivalent circuit parameters for R1 and R2 are shown in Table 1

SMD resistor Ls Rp Cp

R1, 1 Ω 0.86 nH 0.94 Ohm 31 pF

R2, 48.7 Ω 1.01 nH 48.77 Ohm 0 pF

Page 28: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 28

SMD componentsSMD componentsSMD components

• Approach 2:- firstly, PCB lines including SMA connectors are measured (shortline, medium line, long line) (no SMD components are present)- secondly, PCB lines that contain SMD components are measured- thirdly, the ‘de-embedding’ of the lines is indirectly performed by taking into account the influence of the lines when determining the values of the equivalent circuit parameters

Page 29: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 29

SMD componentsSMD componentsSMD components

• Approach 2:- two types of circuit structures are used

- PCB2 network is used to model either a resistor or a capacitor

P1 P2

Z1

Z2P1 P2

Z2

PCB1 PCB2

Page 30: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 30

SMD componentsSMD componentsSMD components

• Approach 2 – Example 1:- modelling of a 4.7 nF capacitor

Page 31: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 31

SMD componentsSMD componentsSMD components

• Approach 2 – Example 2:- modelling of a 48.7 Ohm resistor

Page 32: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 32

SMD componentsSMD componentsSMD components

• Approach 2 – Example 2 (continued):- modelling of a 48.7 Ohm resistor

Page 33: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 33

SMD componentsSMD componentsSMD components

• Tolerance of SMD components is a separate issue:

- a family of 10 curves for the capacitor C = 4.7 nF (10% tolerance)

0.5 1 1.5 2 2.5 3x 109

-45

-40

-35

-30

-25

-20

-15

C=4.7 nF (534-5724)Maximum difference = 6.38 db

Frequency [Hz]

S11

[db]

0.5 1 1.5 2 2.5 3x 109

-6

-5

-4

-3

-2

-1

C=4.7 nF (534-5724)Maximum difference = 1.16 rad

Frequency [Hz]

S11

[rad

]

Page 34: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 34

SMD componentsSMD componentsSMD components

• Tolerance (continued):- a family of 10 curves for the capacitor C = 4.7 nF (10% tolerance)

0.5 1 1.5 2 2.5 3x 109

-0.8

-0.6

-0.4

-0.2

0

C=4.7 nF (534-5724)Maximum difference = 0.14 db

Frequency [Hz]

S12

[db]

0.5 1 1.5 2 2.5 3x 109

-3

-2

-1

0

1

C=4.7 nF (534-5724)Maximum difference = 0.09 rad

Frequency [Hz]

S12

[rad

]

Page 35: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 35

SMD componentsSMD componentsSMD components

• Tolerance (continued):- a family of 10 curves for the capacitor C = 4.7 nF (10% tolerance) produces the following variation of the model parameters:

• Max C=5.17e-09 F (+10% of nominal value of 4.7nF)• Min C=4.23e-09 F (-10% of nominal value of 4.7nF)• Max Rp=8.18e+11 Ohm, Min Rp=1.47e+11 Ohm

• Max Ls=5.08e-10 H, Min Ls=2.84e-10 H• Max Rs=0.517 Ohm, Min Rs=0

Page 36: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 36

SMD componentsSMD componentsSMD components

• Tolerance of SMD resistors:- a family of 10 curves for the resistor R = 48.7 Ohm (1% tolerance)

0.5 1 1.5 2 2.5 3x 109

-10.5

-10

-9.5

-9

-8.5

-8

-7.5

R=48.7 Ohm (117-0657)Maximum difference = 0.70 db

Frequency [Hz]

S11

[db]

0.5 1 1.5 2 2.5 3x 109

-5

-4

-3

-2

-1

0

R=48.7 Ohm (117-0657)Maximum difference = 0.13 rad

Frequency [Hz]

S11

[rad

]

Page 37: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 37

SMD componentsSMD componentsSMD components

• Tolerance of SMD resistors (continued):- a family of 10 curves for the resistor R = 48.7 Ohm (1% tolerance)

0.5 1 1.5 2 2.5 3x 109

-6

-5.5

-5

-4.5

-4

-3.5

-3

R=48.7 Ohm (117-0657)Maximum difference = 0.47 db

Frequency [Hz]

S12

[db]

0.5 1 1.5 2 2.5 3x 109

-3

-2.5

-2

-1.5

-1

-0.5

0

R=48.7 Ohm (117-0657)Maximum difference = 0.10 rad

Frequency [Hz]

S12

[rad

]

Page 38: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 38

SMD componentsSMD componentsSMD components

• Tolerance of the family of 48.7 Ohm resistors- a family of 10 resistors of R = 48.7 Ohm (1% tolerance) produces the following variation of the model parameters:

• Max R1=48.7 Ohm (+0.03% of nominal value of 48.7 Ohm)• Min R1=46.9 Ohm (-3.6% of nominal value of 48.7 Ohm)• Max Cp=5.04e-14 F, Min Cp=0• Max Ls=1.88e-09 H, Min Ls=1.35e-09 H

Page 39: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 39

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 40: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 40

Chip packagingChip packagingChip packaging

• Ansoft Q3D Extractor is used to extract the parasitics from the 3D model of the package

• Three different packages are modelled:

– JLCC 84 pin

– CLCC 84 pin– PLCC 84 pin

Page 41: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 41

Chip packagingChip packagingChip packaging

• The 3D model of the JLCC 84 package consists of:– Bondwires– Leadframe– Ceramic case– Pins– Silicon chip

Page 42: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 42

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 43: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 43

On-chip circuitOnOn--chip circuitchip circuit

• There is nothing special about this stage (almost nothing)

• Cadence Spectre is used as a circuit simulator• Normally, an RC extraction of the circuit is performed to check

the influence of parasitics

• HERE, as the conducted EM emissions are measured at the ground pin of the chip (i.e. packaged chip), a separate extraction of the on-chip power/ground (PWR/GND) lines is performed by using Ansoft Q3D Extractor

• Thus, when using the description ‘RC extracted circuit’, these words denote the RC extracted circuit without the PWR/GND lines

Page 44: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 44

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

Page 45: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 45

Results – EMC modelsResults Results –– EMC modelsEMC models

EMC models and simulation strategy• The following levels of modelling are used

– Complete model– Without packaging model (all other models included)– Without RC extraction of the circuit layout (PWR/GND lines

are included as they are extracted separately)– Without SMD parasitics– Withouth extracted PWR/GND lines– Without extracted PCB tracks

Page 46: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 46

Results – Simulation timeResults Results –– Simulation timeSimulation time

LIN interface is selected as a test circuit

LIN ver. non-opt.

LIN ver. opt.

M1M1High

Voltage partHighVoltage part

LowVoltagepart

LowVoltagepart

Page 47: WP2 RELIABILITY SIMULATION - University of Cambridge · ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 2 ESSDERC ’06 – Montreux, Switzerland Friday 22nd of September

ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 47

Results – Simulation timeResults Results –– Simulation timeSimulation time

• The simulations are performed on Pentium 4 – 3.2 GHZ PC

• Table presents the influence of various EMC models on the simulation time of the reflected and injected power according to the DPI method (IEC 62132-4)

next page

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 48

Results – Simulation timeResults Results –– Simulation timeSimulation time

NOTE:1. RC extracted layout consumes most of the simulation time2. Packaging and PCB tracks introduce approximately the same load3. PWR/GND extraction has relatively minor influence, while SMD

components on the PCB practically present no effort to simulate

EMC Model Simulation time (CPU time)

Simulation time w.r.t. full model simulation time

Complete model 1 min 9 s 100 %

Without packaging model 44 s 64.2 %

Without RC extraction of the layout 20 s 28.3 %

Without SMD parasitics model 1 min 9 s 100 %

Without extracted PWR/GND 57 s 82.6 %

Without PCB tracks model 48 s 69.9%

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 49

Results – Simulation timeResults Results –– Simulation timeSimulation time

• Table on the next page presents the influence of various EMC models on the simulation time of the conducte EM emissions according to IEC 61967-4)

• Here, the model of the input signal generator is added to correctly reproduce the input signal as it is measured

next page

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 50

Results – Simulation timeResults Results –– Simulation timeSimulation time

NOTE:1. RC extracted layout consumes most of the simulation time again2. Packaging and PCB tracks contribute similarly to the simulation load, as

well as the input signal generator model3. SMD parasitics have the smallest influence on the simulation time

EMC Model Simulation time (CPU time)

Simulation time w.r.t. full model simulation time

Complete model 13 min 31 s 100 %

Without packaging model 6 min 40 s 49.3 %

Without RC extraction of the layout 2m 53.3s 21.3 %

Without SMD parasitics model 11 min 23 s 84.2 %

Without extracted PWR/GND 7 min 55 s 58.6 %

Without PCB tracks model 5 min 35 s 41.3 %

Without model of the input signal generator 5 min 48 s 42.9 %

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 51

Results - AccuracyResults Results -- AccuracyAccuracy

• Accuracy of simulations is also checked on the LIN circuit

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 52

Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 (complete model)

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 (without RC extraction of the layout)

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 (without PCB parasitics)

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 (without on-chip PWR/GND parasitics)

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 (without packaging parasitics)

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 – SUMMARY

• NOTE: SMD components, packing and PCB tracks are of great importance

Model MSE_transmitted MaxE_transmitted

MSE_reflected MaxE_reflected

Complete model 0.7878 1.5219 0.4120 1.3866

Without PCB tracks model 8.3136 4.9160 2.3204 2.9344

Without packaging model 1.1398 2.5309 3.8925 5.9822

Without extracted PWR/GND 0.6290 1.2289 0.3451 1.3144

Without SMD parasitics model 7.6348 3.8962 47.7584 13.2396

Without RC extraction of the layout 0.8156 1.5932 0.3400 1.2384

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Results - AccuracyResults Results -- AccuracyAccuracy

• Transmitted and reflected power according to 62123-4 – SUMMARY for LIN2 (second version of the LIN interface)

• NOTE: SMD components, PCB tracks and PWR/GND parasitics are of great importance (as well as RC extracted circuit)

Model MseR_transmitted

MaxE_transmitted

MseR_refl MaxE_refl

Complete model 1.1842 1.9641 0.6955 1.8750

Without PCB tracks model 24.8539 9.8015 1.2883 1.8023

Without packaging model 1.7627 2.2555 1.7870 2.6733

Without extracted PWR/GND 3.1627 3.3152 14.3338 6.9177

Without SMD parasitics model 8.1255 4.6209 77.7651 16.6159

Without RC extraction of the layout

3.5901 3.0528 2.7673 4.4898

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ESSDERC ’06, Montreux ROBUSPIC Workshop A. Baric – Slide 59

ContentsContentsContents

1 Introduction2 PCB modelling3 SMD components4 Chip packaging5 On-chip circuit6 Results7 Conclusion

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Conclusion - 1Conclusion Conclusion -- 11

This presentation shows the importance of various models that can be used in conducted EMC tests:

SMD components:• It is shown that SMD components mounted on the PCB are of

paramount importance for the accuracy of simulations• It is also shown that modelling SMD components introduces a

minimum load on the simulation time• On the other hand, the extraction of SMD parasitics has to be

performed separately for various families of SMD components; variations of the model parameters have to be known

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Conclusion - 2Conclusion Conclusion -- 22

PCB tracks:• Correct modelling of PCB tracks is equally important• PCB model does consume more time than SMD model, but it is

still not the major load during simulations• Similarly to modelling SMD components, it does not seem that

there is a simple and accurate approach to modelling PCBs exclusively by simulations

• It seems that it is difficult to build an accurate PCB model without previously manufacturing a PCB

• 3D EM field simulations, if possible at all for more complex PCBlayouts, do not seem to be simple and accurate enough

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Conclusion - 3Conclusion Conclusion -- 33

Packaging:• Correct model of the package can be built and simulated relatively

easily• Defining the model for the 3D EM simulations is time consuming

Power/ground extraction:• This extraction is of great importance for the accuracy of simulations

RC circuit extraction:• Although RC extracted circuit consumes a lot of simulation time, this

step has to be performed