the challenge of metrology in the 450mm wafer transition process
TRANSCRIPT
Page 1
© Fraunhofer IISB
Conference: 450mm in Europe – Quo Vadis? October 7, 2009.Martin Schellenberger, Lothar Pfitzner. Fraunhofer IISB.
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
Page 2
Group / Department, Date© Fraunhofer IISB
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
About Fraunhofer
Metrology in Semiconductor Manufacturing
450 mm Metrology Tools
Potential Next Steps
Summary & Outlook
Page 3
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
The Fraunhofer Gesellschaft
60 institutes at 40 locations
17.000 employees
1,5 billion € budget
Founded in 1949 in Munich, Germany, the Fraunhofer-Gesellschaft with its numerous institutes is the leading establishment of applied research in Germany.
The Fraunhofer-Gesellschaft conducts research according to the needs of the market in the domestic and international R&D marketplace.
Fraunhofer Profile Microelectronics
Production
Information and CommunicationTechnology
Materials and Components
Life Sciences
Surface Technology and Photonics
Page 4
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Technological Profile of IISBFraunhofer IISB: Departments and Fields of Activity
Semiconductor Technology» From Crystals to Devices «
Power Electronics and Mechatronics» From Devices to Systems «
Page 5
Group / Department, Date© Fraunhofer IISB
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
About Fraunhofer
Metrology in Semiconductor Manufacturing
Metrology in Production
Production Ramp curve
450 mm Metrology Tools
Potential Next Steps
Summary & Outlook
Page 6
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Metrology in Nanotechnologies
Understanding and controlling dimensions, materials properties, and defects towards atomic level is required (e.g. 1.5 nm HfSiOx layer)
Improving capabilities of metrology and analysis equipment (e.g. 3D at atomic scale) poses huge challenges
Semiconductor Manufacturing
A series of processes with up to 1000 processing steps
A series of interposed metrology and inspection steps
800
600
400
200
0
1009080708000
6000
4000
2000
0
Scatt
Yie
ld (
a.u
.)
100908070 Energy (keV)
4000
-400
run61500.2d.data.tile.energy@x=86-90.ascii
1.5 nm 1nm
HfSiOx SiO2 Si wafer
X10
O Si Hf800
600
400
200
0
1009080708000
6000
4000
2000
0
Scatt
Yie
ld (
a.u
.)
100908070 Energy (keV)
4000
-400
run61500.2d.data.tile.energy@x=86-90.ascii
1.5 nm 1nm
HfSiOx SiO2 Si wafer
1.5 nm 1nm
HfSiOx SiO2 Si wafer
X10
O Si Hf
Introduction
Analysis at atomic scale performed with XTEM @ CNR & MEIS @
Daresburg Laboratory (USAL) (ANNA –project FP6 EC contract 026134-RII3)
HfSiOx: 1.4 ± 0.5 nm 2.1 ± 0.5 nm SiO2: 1.1 ± 0.5 nm 1.1 ± 0.5 nm
5 nm
HfSiOx SiO2
Metrology for semiconductor manufacturing is the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control.
Page 7
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
n-well p-well
n
Via
p
crackshort
open
contamination
p+
particle
COP
layer thickness
Metal 1
Metal 2overlay
p
Interconnects
n+
particle
ESD Damage
Si crystal:stacking faults, contamination, stress, COP
interfaces : roughness , state density, charges
alignment
STI
gate
LDD
spacer
S and D implant
PDM
W Plug
IMD
metal
passivation
5
packageFE
OL
BE
OL contact
contact
well and Vt
pro
cess
flo
w
Defect and Failure Scenario of an IC
Introduction
Page 8
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Metrology for Semiconductor ManufacturingP
roce
ss L
ev
el/
Yie
ld Process Integration Pilot Mass Production
ProcessTuning
Process StabilizationProduct Production
ProcessSelection
ProcessCreation
Ideal Process and Yield Learning Curve
Technology Transfer
Transfer
Actual Process and Yield Learning Curve
So
urc
e: G
iich
i In
ou
e,T
osh
iba
Sem
ico
nd
uct
or
Metrology in Semiconductor Manufacturing
Metrology required as the basis of preparatory know-how, of off-line, in-line and in situ-characterization, and advanced process control.
Page 9
Group / Department, Date© Fraunhofer IISB
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
About Fraunhofer
Introduction
Metrology in Semiconductor Manufacturing
450 mm Metrology Tools
Impact of 450 mm Wafer Diameter on Equipment and Metrology
Potential Development Topics for 450mm Metrology Tools
Priorities in 450 mm?
Potential Next Steps
Summary & Outlook
Page 10
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Diameter 300 mm 450 mm
Thickness 775 µm 925 µm
Area 706 cm² 1589 cm²
Impacted Areas Focus Items
Processes Process uniformity, contamination, thermal effects/ uniformity, (cleaning, polishing, deposition, etch, anneal, ..)
Lithography Increase of area by 2.25 times requires high performance –high speed litho
Handling Deformation (stress), transport issues, wafer translation (large distances, acceleration and settling times increase, vertical drift along the wafer)
Metrology Stages and handling, mapping capabilities, increase of area by 2.25 times requires high performance – high speed metrology (inspection), dimensional change due to thermal expansion coefficient, …
Data Management Amount of data, data quality, …
Impact of 450 mm Wafer Diameter on Equipment and Metrology
450 mm Metrology Tools
Page 11
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Stand-alone metrology
Improved scatterometry (3D)
Particle measurement, contamination monitoring
Stress measurement at the nanoscale
Metrology tools for characterization of dielectrics, ultra-thin layers and interfaces (composition, morphology, geometric dimensions)
Reference materials
Integrated metrology and sensors
Sensors for improved equipment characterization and qualification
Sensors for characterization of plasma, litho, and CMP processes
Metrology/sensors as enabler for APC
Potential Development Topics for 450mm Metrology Tools (1/2):
450 mm Metrology Tools
Collected early 2009 from EU metrology companies
Page 12
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Data process ing and algorithms
Algorithms for the measurements of complex stacks and features
Models for the analysis of ultra-thin layers including interface and quantum effects
Data reduction algorithms for correlated sampling approach and calculation of quality data
Model for quantification of precision trade-off of IM to stand-alone metrology vs. improved sampling rate and time based information
Automation
Modular approach for automation and software
Benefit expected for 300 mm and 200 mm equipment
Potential Development Topics for 450mm Metrology Tools (2/2):
450 mm Metrology Tools
Collected early 2009 from EU metrology companies
Page 13
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
450 mm Metrology Tools
metal layerspatterned layers
low-k materialsgate oxide
Key applications
for Integrated Metrology
- CD- overlay - layer thickness- inspection
(macro, defect)
- thickness- uniformity- nitrogen content
and profile
- filling quality- grain size- crystallographic
texture
- thickness- refractive index- porosity- composition- uniformity
Priorities in 450 mm?
To be defined by end-users(target specs, required improvements/ modifications)
May not differ too much from current ones, e.g. NANOCMOS
NANOCMOS funded under EU 6th FP, #507587
450 mm Metrology Tools
Page 14
Group / Department, Date© Fraunhofer IISB
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
About Fraunhofer
Introduction
Metrology in Semiconductor Manufacturing
450 mm Metrology Tools
Potential Next Steps
Network in Metrology
450 mm Metrology Platform
Support and R&D Activities
Summary & Outlook
Page 15
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
ROUSSET
MIGDAL HAEMEK
VILLACH
BUDAPEST
ERLANGE
N
JENAAACHEN
LÜBECK
LEUVEN
WITNEY OXFORDSHIRE
CROLLES
BERNIN
DRESDEN
EINDHOVEN
WIENER
NEUSTADT
GRENOBLE
= supplier
= user
= R & D
TOULOUSE
BERLIN
PARIS
TEL AVIV
JERUSALEM
WIEN
TRENTO
BOLOGNAMILANO
ROMA
ATHENSPATRAS
DUBLIN
SALFORD
DORTMUND
ZÜRIC
HUNTERPREMSTÄTTE
N
AVEZZAN
O
MAINZ
ST. FLORIAN
AMSTERDAM
LANDSHU
TMÜNCHEN
KREFEL
D
KARLSRUH
E
HAMBURG
RENDSBURG
NIJMEGEN
BELFASTVTT
NOVARA
AVEZZAN
O
AGRATE
www.semiconductors .co.uk
Potential Next Steps
Metrology is a European strength!
Network in Metrology
Page 16
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Potential Next StepsContributions by IISB450mm Platforms for Metrology Development Fraunhofer ready to provide
Stand-alone metrology: Realization of a 450 mm metrology platform, which
enables the development of individual core metrology systems for 450 mm
metrology requirements without the need to supply overhead wafer handling
equipment, open automation, and fab data management.
Integrated metrology and sensors: Realization of test beds to realize common
standardized integration and automation strategies for the development of IM
and sensors without the need to supply overhead automation, and fab data
management.
R&D Activ ities for 450 mm Metrology Fraunhofer ready to start
IISB metrology and expertise applicable to 450 mm: wave front sensors,
scatterometry, ellipsometry, digital imaging and processing, defect inspection, x-ray
techniques
Equipment qualification/development: organic/inorganic contamination, thermo
desorption, TXRF, vapor phase composition
Sensor development for stand-alone and integrated metrology, virtual metrology
Page 17
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Contributions by IISBPotential Next Steps
Support Activ ities for 450 mm Metrology Equipment Development
Production of test wafers and reference samples, e.g. with controlled deposition of
contaminants and defects
Cleaning and polishing (double and single side)
Definition of standardized wafer for 450 mm wafer exchange amongst R&D sites
using accepted specifications
Set-up of distributed processing network including logistics for 450 mm
Development of standards
Collaboration Fraunhofer ready to coordinate
Intel/Samsung/TSMC, SEMATECH/ISMI, Albany, Taiwan, ...
Link to expertise in FP7/ENIAC/... projects (benefit for 300 mm Prime, 450 mm), e.g.
IMPROVE, ...
„Flying Wafer“ for 450mm, also on a world-wide scale
Europe acting as focal point for global developments in (450mm) metrology
Page 18
Group / Department, Date© Fraunhofer IISB
THE CHALLENGE OF METROLOGYIN THE 450MM WAFER TRANSITION PROCESS
About Fraunhofer
Introduction
Metrology in Semiconductor Manufacturing
450 mm Metrology Tools
Potential Next Steps
Summary & Outlook
Page 19
The Challenge of Metrologyin the 450mm Transition Process© Fraunhofer IISB
Metrology is the onset of the food chain
Currently, appropriate modification of existing metrology tools is
sufficient for starting 450 mm development
Support of equipment suppliers in the transition to 450 mm and towards
novel metrology challenges
IISB ready to provide 450 mm atmospheric stage and 450 mm vacuum
stage with (standardized?) sensor and metrology components
accommodation
Integration of metrology will be continued by IISB
Global collaboration is mandatory in research and with industry
Summary & Outlook