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©2019 by System Plus Consulting | GaN-on-Sapphire HEMT Power IC by Power Integrations 1

22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

GaN-on-Sapphire HEMT Power IC by Power Integrations

InnoSwitch3 Flyback Switcher Power IC in Anker PowerPort Atom PD 1

SP19480 - Power Semiconductor report by Amine ALLOUCHELaboratory Analysis by Nicolas RADUFE

July 2019 – SAMPLE

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT


Table of Contents

Overview / Introduction 5

o Executive Summary

o Market

o Reverse Costing Methodology

Company Profile 13

o Power Integrations

Physical Analysis 17

o Summary of the Physical Analysis

o Power IC in Wall-Charger Anker PowerPort Atom PD 1

o Package analysis

Package Opening

Package Cross-Sections

o HEMT Die

HEMT Die View & Dimensions

HEMT Die Process

HEMT Die Cross-Section

HEMT Die Process Characteristic

o Primary & Secondary Control ICs

IC Dies View & Dimensions

IC Dies Process

IC Dies Cross-Section

IC Dies Process Characteristic

Manufacturing Process Flow 98

o HEMT Die Front-End Process

o HEMT Die Fabrication Unit

o IC Dies Front-End Process

o IC Dies Fabrication Unit

o Packaging Process Flow

Cost Analysis 120

o Summary of the cost analysis

o Yields Explanation & Hypotheses

o HEMT die

HEMT Wafer Front-End Cost and Front-End Cost per process step.

HEMT Back-End0 Cost: Die Probe Test, Thinning & Dicing

HEMT Die Cost

o IC dies

IC Front-End Cost

IC Back-End0 Cost : Die Probe Test, Thinning & Dicing

IC Die Cost

o Packaging Assembly Cost

o Component Cost

Back-End: Final Test Cost

Component Cost

Price Analysis 143

o Definition of prices

o Estimation of selling price

Comparison 146

o Technology and cost comparison between Power Integrations and Navitas

GaN HEMT dies

Feedback 149

System Plus services 151


Overview / Introductiono Executive Summaryo Marketo Reverse Costing

Methodology

Company Profile & Supply Chain

Physical Analysis

Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

Comparison

Related Reports

About System Plus

Executive Summary

The long-expected first GaN-on-Sapphire die has been integrated into a commercially-available device!

In this report, System Plus Consulting unveils Power Integrations’ technical choices from the device design up to the packaging.

The first GaN-on-Sapphire-based Power Integrated Circuit (IC) die has been found in the Wall-Charger PowerPort Atom PD1: A2017 from Anker. The die is co-packaged with three ICs constituting primary-side and secondary-side controllers in the SC1933C device.

To our great surprise, the power GaN HEMT was processed on a sapphire substrate which is a major breakthrough that we did not observe before in other power GaN HEMTs. The latter being generally processed on Silicon substrates.

In this report, System Plus Consulting presents a deep teardown analysis of the SC1933C. Detailed optical and Scanning Electron Microscope pictures and cross-sections with energy-dispersive X-ray analysis are included to reveal Power Integrations’ technical choices at the microscopic level of the IC and HEMT designs.

The report provides an estimation of the production costs of the ICs, the HEMT and the package as well as the estimated selling price of the component. Finally, the report includes a comparison with the GaN-on-silicon HEMT from Navitas. This comparison highlights the differences in GaN die designs and manufacturing costs.

A system-oriented analysis of the PowerPort Atom PD1: A2017 from Anker, can be found in our "GaN Chargers Comparison" report, which focuses on the impact of GaN die adoption in the latest wall charger designs and their performance.


Overview / Introductiono Executive Summaryo Marketo Reverse Costing

Methodology


Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

GaN – Main Players Roadmap


Overview / Introduction

Company Profile & SupplyChain

Physical Analysis o Summaryo InnoSwitch Technologyo Packageo GaN HEMTo Primary Control ICso Secondary Control IC


Cost Analysis


Comparison

Related Reports

About System Plus

Summary of the Physical Analysis






Cost Analysis


Comparison

Related Reports

About System Plus

Plastic molding

Cross-section axis #1

Package Cross-Section #1: HEMT – Optical View©2019 by System Plus Consulting

Package Cross-Section #1: HEMT – Optical View©2019 by System Plus Consulting

xx wire bonding

xxx

xxx

xxx

xx

Package Cross-Section #1






Cost Analysis


Comparison

Related Reports

About System Plus

HEMT die Dimensions






Cost Analysis


Comparison

Related Reports

About System Plus

xx µm

Die process before delayering – Optical View©2019 by System Plus Consulting

Die process after delayering – Optical View©2019 by System Plus Consulting

o Pitch: xx µm

xxxx

Die Process






Cost Analysis


Comparison

Related Reports

About System Plus

xx µm

xxx

Die Cross-Section

Die Cross-Section – SEM View©2019 by System Plus Consulting

o Die thickness: xx µm

o xx solder thickness: xx µm

Substrate

Copper leadframe

Package plastic molding

xxx

Cu bonding

xx µm






Cost Analysis


Comparison

Related Reports

About System Plus

xxx

Die Cross-Section – EDX Analysis: xxx


o The EDX analysis on the substrate xxx reveals the presence of a majoritary xxx (93.35%), proving a xxx of HEMT die.

Element P% A%

Xx 93.35 70.93

xx 2.11 2.73

EDX

o Xxx thickness: xx µm

xx µm






Cost Analysis


Comparison

Related Reports

About System PlusDie Cross-Section – SEM View©2019 by System Plus Consulting

Package plastic molding

xxx


xx

xx

xx: xx

o GaN: xx µm

o xx : xx µm

o Al: xx µm

o xx: xx µm

o xx: xx µm

Layers thickness:

Source contact

Drain contact

xx

Die Cross-Section






Cost Analysis


Comparison

Related Reports

About System Plus

IC Die – Optical View©2019 by System Plus Consulting

Primary Side Controller IC “Die 1” – Delayering






Cost Analysis


Comparison

Related Reports

About System Plus IC Die Process – Optical View©2019 by System Plus Consulting

Primary Side Controller IC “Die 1” – Delayering

IC Die Process – Optical View©2019 by System Plus Consulting

o The process uses xx transistors.

o MOS transistor gate length: xx µm.

o We consider that the minimum dimension is xx µm.

xx µm




Physical Analysis

Manufacturing Process Flowo HEMT Fab Unito HEMT Process Flowo ICs Fab Unito ICs Process Flowo Component Packaging

Cost Analysis


Comparison

Related Reports

About System Plus

Detailed Front-End Process – PowerCoSim+ Tool




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

GaN Transistor - Process Flow (2/4)

xx for xx contact

• Xxx pattern and etching

SiN layer

• SiN deposition and patterning.

Xxx contact

• xxx deposition and patterning.

SiN

Drawing not to Scale

xxx




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Description of the Wafer Fabrication Unit – IC Die 1

o In our calculation, we simulate a production unit using 150mm wafers. IC manufacturing Process was simulated on ICPrice+ tool.

Estimated IC wafer fab unit:

Name: xxx

Wafer diameter: 150mm (6-inch)

Capacity: xxx wafers / month

Year of start: xxx

Products: xxx

Location: xxx

Excerpt from ICPrice+ tool




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Secondary Side Controller IC “Die 4”– Front-End Summary

o The die area of the IC is xxx mm².

o The process is a xxx with xxx metal layers, xxx polysilicon layer with xxx.

o It is estimated that this process was introduced in xxx and requires xxx masking steps.

Excerpt from ICPrice+ tool




Physical Analysis


Cost Analysiso Summaryo GaN HEMT Costo ICs Costo Packaging Costo Component Cost


Comparison

Related Reports

About System Plus

GaN HEMT Wafer Front-End Cost per Process Step




Physical Analysis




Comparison

Related Reports

About System Plus

Primary Side Controller IC “Die 1” – Unprobed Wafer Cost

o The wafer cost is estimated between $xx and $xx according to yield hypothesis.

o The main part of the wafer cost is due to the xx with xx% and xxwith xx%.




Physical Analysis




Comparison

Related Reports

About System Plus

Secondary Side Controller IC “Die 4” – Die Cost

o The die cost is estimated between $xx and $xx according to yield variations.

o Silicon cost accounts for xx% of the cost.

o The probe test, back grinding and dicing represent xx% of the cost.

o The scrap cost (xx%) is the total of all the losses during the back-end process.




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Estimated Selling Price

o The component manufacturing cost ranges from$xx to $xx according to yield variations.

o The component selling price ranges from $xx to$xx according to yield variations.




Physical Analysis


Cost Analysis


Comparisono Power Integrations vs

Navitas

Related Reports

About System Plus

Comparison between Power Integrations and Navitas GaN HEMT dies

Manufacturer TransistorPackage

TypeYear

Die Size (mm²)

Lithography masks

Metal layers Pitch (µm)Epitaxy

(µm)

Wafer thickness

(µm)

Power Integrations SC1933C SOIC 2018 xx xx xx xx xx xx

Navitas NV6115 QFN 6-pin 2018 xx xx xx xx xx xx

xxx

Navitas - NV6115Power Integrations - SC1933C

Note:NV6115 component is aHEMT transistor with a driverinterface.Detailed teardown of theNavitas NV6115 can be foundin System Plus Consulting’sreport “SP19464 - NavitasGaN HEMT 650V Family”.




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Plus

Related Reports

MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT

POWER ELECTRONICS & COMPOUND SEMI• Power GaN 2018: Epitaxy, Devices, Applications and Technology

Trends• Discrete Power Device Packaging: Materials Market and

Technology Trends 2019• Status of the Power Electronics Industry 2018• Wireless Charging Technologies and Markets 2018

REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING

POWER SEMICONDUCTORS & COMPOUND• GaN-Based Wall Charger Comparison 2019• Navitas 650V GaNFast Power IC Family• GaN-on-Silicon Transistor Comparison 2018• Texas Instruments’ LMG5200 GaN Power Stage

https://www.i-micronews.com/products/status-of-the-power-electronics-industry-2018/


https://www.i-micronews.com/products/discrete-power-device-packaging-materials-market-and-technology-trends-2019/


https://www.systemplus.fr/reverse-costing-reports/gan-on-silicon-transistor-comparison-2018/


https://www.systemplus.fr/reverse-costing-reports/navitas-650v-ganfast-power-ic-family/


https://www.i-micronews.com/products/power-gan-2018-epitaxy-devices-applications-and-technology-trends/



https://www.i-micronews.com/products/wireless-charging-technologies-and-markets-2018/

https://www.systemplus.fr/reverse-costing-reports/gan-based-wall-charger-comparison-2019/



https://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/






COMPANYSERVICES




Physical Analysis


Cost Analysis


Comparison

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About System Pluso Company serviceso Contact

Business Models a Fields of Expertise

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Reports(>60 reports per year)

Costing Tools

Trainings




Physical Analysis


Cost Analysis


Comparison

Related Reports

About System Pluso Company serviceso Contact

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