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VDMA | ITRPV 2017 Page 1 | 15 March 2017
Source: www.siemens.com/presse
Recent Results of the
International Technology Roadmap
for Photovoltaics (ITRPV) 8th Edition, March 2017
A. Metz, M. Fischer, J. Trube
PV seminar at UNSW
Sydney, March 23rd, 2017
VDMA | Author ITRPV 2017 Page 2 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRPV – Results 2016
- Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA | Author ITRPV 2017 Page 3 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRPV – Results 2016
- Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
ITRPV – Methodology
| Author ITRPV 2017 Page 4 |
Working group today includes 40 contributors from Asia, Europe, and US
Participating
companies
Independent data
collection / processing
by VDMA
Review of data
Preparation of publication
regional chairs
Next
ITRPV
edition
SILICON CRYSTAL. WAFER CELL SYSTEM MODULE
Parameters in main areas are discussed Diagrams of median values
Photovoltaic
Equipment
Chairs EU
Chairs PRC
Chairs TW
Chairs US
15 March 2017
VDMA
Review ITRPV predictionsWafer thickness (multi)
0
20
40
60
80
100
120
140
160
180
200
2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027
µm
1. Edition 2. Edition 3. Edition 4. Edition 5. Edition 6. Edition 7. Edition 8. Edition
ITR
PV
2017
Page 5 | 15 March 2017
ITRPV 8th Edition 2017 – some statistics
Edition 8th 7th
Contributors 40 33
Figures 60 50
Prediction quality since 2009:
Silver consumption trend well predicted and realized
(Silver availability depends on world market)
Wafer thickness trend bad predicted and no progress
(Poly-Si price depends on PV market development)
Review ITRPV predictionsSilver amount per cell
0
0,05
0,1
0,15
0,2
0,25
0,3
0,35
0,4
0,45
2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027
silv
er
pe
r ce
ll [g
/ce
ll]
1. Edition 2. Edition 3. Edition 4. Edition 5. Edition 6. Edition 7. Edition 8. Edition
ITR
PV
2017
| ITRPV 2017
VDMA | ITRPV 2017 Page 6 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRPV – Results 2016
- Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
PV learning Curve
| Author ITRPV 2017 Page 7 | 15 March 2017
Learning curve for module price as a function of cumutative shipments
10-1106 107
10-1100 101 102 103 104 105 106 107
0.1
1
10
100
0.1
1
10
100
av
era
ge
mo
du
les
ale
sp
ric
e[U
SD
20
16
/Wp
]
100 101 102 103 104 105
cumulative PV module shipments [MW]
historic price data
LR 22.5 %
ITRPV 2017
Shipments /avg. price at years end:
2016: 75 GWp / 0.37 US$/Wp
o/a shipment: ≈ 308 GWp
o/a installation: ≈ 300 GWp
300 GWp landmark was passed!
LR 21.5% (1976 …. 2016)
dramatic price drop due to market situation
Comparable to 2011/2012, but faster
2012
12 / 2016 300GWp
2011
VDMA
Price considerations
| Author ITRPV 2017 Page 8 | 15 March 2017
Learning curve for module price as a function of cumutative shipments
ITRPV 2017
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1,0
1,1
1,2
1,3
1,4
1,5
1,6
1,7
1,8
Spo
t P
ricin
g [
US
D/W
p]
Silicon Multi Wafer Multi Cell Multi Module
Poly Si 26%Poly Si 12%
Poly Si 24%
Wafer 29%
Wafer 23%
Wafer 16%
Cell 20%
Cell 23%Cell 23%
Module25% Module
42%
Module37%
share 01_2011 share 01_2016 share 01_2017
reduction 01/2011 01/2016: ≈ 64 %
reduction 01/2016 01/2017: ≈ 36 %
(reduction 01/2011 01/2012: ≈ 40 %)
Dramatic price drop during 2nd half of 2016
Market driven drop
Poly-Si share increased again
High pressure on module manufacturers
1.59 US$
0.58 US$
0.37 US$
Module price break down [US$/Wp]
ITRPV 2017
0,413
0,072 0,087
0,462
0,13 0,058
0,32
0,135
0,086
0,395
0,24
0,138
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
01_2011 01_2016 01_2017
Module
price (U
S$/W
p)
Module
Cell
Wafer
Poly Si
VDMA | Author ITRPV 2017 Page 9 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRPV – Results 2016
- Si / Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
Silicon feedstock technologyWorld market share [%]
Siemens
FBR
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
IHS 2016 2016 2017 2019 2021 2024 2027
Siemens FBR other
IHS
Ma
rkit
da
ta
ITR
PV
2017
| Author ITRPV 2017 Page 10 | 15 March 2017
Silicon – Materials: Poly Si Feedstock Technology
Poly Si price trend:
E 2012: 20 US$/kg
02/ 2016:
≈14 US$/kg
86%
10%
oversupply situation of 2016 relieved
Siemens process will remain mainstream
FBR shows potential for cost reduction
FBR share will be increased moderately
w/ new capacity
(2016 values in line w/ IHS Markit)
Other technologies (umg, epi growth, ..)
Not yet mature but available
02/ 2017:
≈16 US$/kg
Trend: Share of poly-Si feedstock technology
VDMA
Wafer – Processes: wafering technology (1)
| Author ITRPV 2017 Page 11 | 15 March 2017
Wire sawing for slurry based and diamond wire sawing; crystal growthThroughput per tool: 2016 = 100%
ITR
PV
2017
90%
100%
110%
120%
130%
140%
150%
2016 2017 2019 2021 2024 2027
crystal growth per tool (mc-Si, mono-like, HPM) slurry based wire sawing
relative troughput CCz[kg/h]/Cz(kg/h] diamond wire based
Kerf loss and TTV for slurry based and diamond wire sawingIT
RP
V 2
01
7
0
20
40
60
80
100
120
140
160
2016 2017 2019 2021 2024 2027
[µm
]
Kerf loss for slurry-based wire sawing [µm] Kerf loss for diamond wire sawing [µm]
TTV for slurry-based wire sawing [µm] TTV for diamond wire sawing [µm]
diamond wire sawing advantage:
enable faster kerf reduction
No big change in thickness variation is expected
Throughput increase in crystallization/wafering will continue
Trend: Kerf loss / TTV Trend: throughput crystallization/ wafering
Ingot mass in crystal growth
ITR
PV
2017
0
200
400
600
800
1.000
1.200
1.400
2016 2017 2019 2021 2024 2027
[kg
]
mc-Si mono-Si
Gen 6
Gen 7
Gen 8
VDMA
Wafer – Processes: wafering technology (2)
| Author ITRPV 2017 Page 12 | 15 March 2017
diamond wire wafering now mainstream for mono-Si
Throughut 2x – 3x faster than slurry based
For mc-Si change to diamond wire is ongoing
main challenge: texturing
For mono-Si For mc-Si Wafering technology for multi SiWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
slurry based electroplated diamonds resin bond diamonds other
Wafering technology for mono SiWorld market share [%]
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
slurry based electroplated diamonds resin bond diamonds other
ITR
PV
20
17
VDMA
Wafer – Processes: texturing of mc-Si wafers
| Author ITRPV 2017 Page 13 | 15 March 2017
Different texturing technologies for mc-SiWorld market share [%]
ITR
PV
201
7
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
standard acidic etching Wet Nano-texture technology Reactive Ion Etching (RIE)
• Acidic texturing is:
mature and high throughput process
changes in “standard” will apear
• Next step:
wet nano texturing, esp. for diamond wire
• RIE share is expected to increase “but”
no cost efficient alternative
Wet processing remains mainstream in mc-Si texturing
Trend: market share of mc-Si texturing technologies
VDMA
100
110
120
130
140
150
160
170
180
190
1st 2nd 3rd 4th 5th 6th 7th 8th
ITRPV Edition
Waferthickness [µm]
2009 2015 2017
Wafer – Product: Wafer thickness trend
| Author ITRPV 2017
Page 14 | 15 March 2017
90
100
110
120
130
140
150
160
170
180
190
2016 2017 2019 2021 2024 2027
[µm
]
Wafer thickness multi Wafer thickness mono limit of cell thickness in future modul technology
Still no progress in mc-Si thickness reduction
180 µm mc-Si preferred thickness since 2009
Thickness reduction expected to start for mono-Si
• cost reduction potential
• diamond wire will support
New module technologies should enable
thickness reduction Mono-Si wafer: thickness reduction starts
VDMA
Wafer – Product: market share of material types
| Author ITRPV 2017
Page 15 | 15 March 2017
Different wafer typesWorld market share [%]
multi
mono
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
IHS 2016 2016 2017 2019 2021 2024 2027
p-type mc p-type HPmc p-type monolike p-type mono n-type mono
ITR
PV
2017
IHS
Ma
rkit
d
ata
Casted material is still dominating today with > 60%
Mono share is expected to increase (driven by n-type)
casted-Si domination is not for ever:
Trend of last years will continue
• Casting technology:
HP mc-Si will replace standard mc-Si
no “come back” of mono-like expected
• Mono technology:
n-type material share will increase
n- + p-type market share today ≈ 35%
(2016 values are in line w/ IHS Markit)
• p-type material is expected to stay dominant
mainly due to progress in LID regeneration
Trend: share of c-Si material types
| ITRPV 2017
VDMA
Wafer – market share of wafer dimensions (new)
| ITRPV 2017 Page 16 | 15 March 2017
Different mc-Si wafer sizesWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
156.0 +-0.5 * 156.0 +- 0.5 mm² 156.75 +-0.25 * 156.75 +- 0.25 mm²
161.75 +-0.25 * 161.75 +- 0.25 mm²
Different mono-Si wafer sizesWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
156.0 +-0.5 * 156.0 +- 0.5 mm² 156.75 +-0.25 * 156.75 +- 0.25 mm²
161.75 +-0.25 * 161.75 +- 0.25 mm²
Trend: mono-Si Trend: mc-Si
Fast switch to new format:
New mainstream: 156.75 x 156.75 mm²
Larger formats are upcoming
Transition to new format in 2017
Expected new mainstream: 156.75 x 156.75 mm²
Larger formats may occur after 2020
VDMA | Author ITRPV 2017 Page 17 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRPV – Results 2016
- Si / Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
Trend for remaining silver per cell (156x156mm²)IT
RP
V 2
01
7
0
20
40
60
80
100
120
2016 2017 2019 2021 2024 2027
Am
ou
nt o
f sil
ver
per
cell
[m
g/c
ell]
0
100
200
300
400
2009 2015 2017
Remaining Silver / Cell [mg]
2nd 3rd 4th 5th 6th 7th 8th
Cell – Materials: Silver (Ag) per cell
| Author ITRPV 2017 Page 18 | 15 March 2017
Good prediction of Ag reduction continues
2009 300 mg
2016 100 mg reached
2017 90 mg expected
Ag accounts in 2016 for ≈ 8% of cell conversion cost
• Ag reduction is mandatory and continues
• delays substitution by Cu or other material
No break through for lead free pastes so far
Market introduction depends on performance
2016: 100mg
≈ 21 t / GWp @ 19.6%
548 $/kg
≈ 1.1 $cent/ Wp*
* avg. cell efficiency 19.6 % ≈ 4.8 Wp/cell
Ag will stay main metallization in c-Si technology
VDMA
Cell – Processes: cell production tool throughputs
| Author ITRPV 2017 Page 19 | 15 March 2017
Cell production tool throughputIT
RP
V 2
017
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
11.000
2016 2017 2019 2021 2024 2027
[Wa
fer/
h]
chemical processes, progessive scenario
chemical processes, evolutional scenario
themal processes, progressive scenario
thermal processes, evolutional scenario
metallisation & classification processes, progressive scenario
metallisation & classification processes, evolutional scenario
Trend: tool throughput increase + synchronization of frontend/backend
Wet benches are leading today with > 7800 wf/h
Throughput increase continues
Challenge: increase throughput + Improve OEE
Two throughput scenarios:
Progressive = new high throughput tools
Evolutionary = continuous improvement
of existing tools (debottlenecking,
upgrades…)
VDMA
Cell – Processes: in line monitoring in cell production (new)
| Author ITRPV 2017 Page 20 | 15 March 2017
Inline process control World market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
automatc optical inspection (AOI) after front/back silver & back Aluminum print
electroluminescence (EL) imaging
infrared (IR) imaging for hotspot detection
Inline process control World market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
optical quality control after antireflectioncoation (AR) coating
incomming wafer inspection
sheet resistance measurement after diffusion
Trend: in-line process control backend/test Trend: in-line process control frontend
AOI is widely used in printing 2016: 70%
Inspection at cell testing:
EL use will expand (currently 5% only)
IR inspection is not widely used
SiNx quality control has constant share – 50%
Incoming wafer inspection will exceed 30% after 2021
Emitter sheet rho in-line control will increase
VDMA
Cell – processes: c-Si metallization technologies
| Author ITRPV 2017 Page 21 | 15 March 2017
Different front side metalization technologiesWorld market share [%]
ITR
PV
201
7
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
screen printing stencil printing direct plating on Si plating on seed layer
Different back side metalization technologiesWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
sctreen printing plating PVD (evaporation/sputtering)
Front side metallization technologies Rear side metallization technologies
Screen printing remains main stream metallization technology
Plating is expected for rear and front side
For rear side PVD methods may appear
VDMA
Cell – processes: finger width / number of bus bars / bifaciality
| Author ITRPV 2017 Page 22 | 15 March 2017
Front side metallization paramters
ITR
PV
20
17
0
10
20
30
40
50
60
2016 2017 2019 2021 2024 2027
[µm
]
Finger width Alignment precision
Bifacial cell technologyWorld market share [%]
ITR
PV
201
7
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
monofacial c-Si bifacial c-Si
Busbar technologyWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
3 busbars 4 busbars 5 busbars busbarless
Trend: Finger width / alignment precision
Trend: number of bus bars (BB)
Trend: market share of bifacial cells
Front side grid finger width reduction continues
2016: < 50µm reached!
Enables Ag reduction, requires increase of number of busbars
4BB are mainstream – 3 BB will disappear
Alignment precision will improve to <10µm @3 sig.
Selective emitters + Bifacial cells require good alignment
Bifacial cells will increase market share
monofacial cells
VDMA
Cell – processes: recombination current densities
| Author ITRPV 2017 Page 23 | 15 March 2017
Recombination current densities
ITR
PV
201
7
0
50
100
150
200
250
2016 2017 2019 2021 2024 2027
Reco
mb
inati
on
cu
rren
t [f
A/c
m2]
J0 bulk p-type multi J0 bulk p-type mono
J0 front p-type material J0 rear p-type material
J0 bulk n-type mono SHJ or back contact J0 front/rear n-type mono SHJ or back contact
p- type: reducing recombination losses is on a good way
n-type: overcomes p-type bulk material limitations
J0bulk
will be further reduced by optimizing crystallization
2010 2016
p-type mc-Si: 650 240 fA/cm²
• further reductions will appear:
2016 2017 2027
p-type mc-Si: 240 180 32 fA/cm²
p-type mono-Si: 125 100 30 fA/cm²
n-type mono-Si: 25 = 25 15 fA/cm²
J0front / J0rear
Further reductions by > 50% to < 50 fA/cm²
p-type improvements are limited at the front side
(i.e. need of improved diffusion / new pastes)
Wide use of rear side passivation concepts
Trend: J0bulk, J0front, J0rear
VDMA
Cell – processes: emitter formation for low J0front
| Author ITRPV 2017 Page 24 | 15 March 2017
Emitter sheet resitance for phosphorous doping (p-type cells)
ITR
PV
20
17
0
20
40
60
80
100
120
140
160
2016 2017 2019 2021 2024 2027
Oh
ms
/ s
qu
are
Different phosphorous emitter technologies for p-type cellsWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
homogenous emitter by gas phase diffusion selective emitter by laser dopingselective emitter by etch back homogenous emitter by ion implantationselective emitter by ion implantation
Trend: emitter sheet resistance Trend: emitter formation technologies
Essential parameter for J0front
95…100 Ω/ are standard today
Increase to 135 Ω/ is predicted
Challenge for tools and front pastes
Mainstream: homogenous gas-phase diffusion
selective doping: etch back or laser doping
Ion implant stays niche
VDMA
Cell – processes: technology for low J0rear
| Author ITRPV 2017 Page 25 | 15 March 2017
Different rear side passivation technologiesWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
PECVD AlOx + capping layer ALD AlOx + capping layer PECVD SiONx
Trend: rear side passivation technologies
Rear side passivation is mandatory for PERC
PECVD AlOx will stay mainstream
ALD will hold up to 10 %
SiONx will disappear
ITRPV prediction for J0rear were good
• BSF cannot deliver required low J0rear
• PERC takes over
• competing technologies in PERC
PECVD Al2O3 + capping
Al2O3 ALD + capping
PECVD SiONx/SiNy etc.
2009 2017
780 120 fA/cm²
VDMA
Cell – Products: cell technologies / cell efficiency trends
| Author ITRPV 2017 Page 26 | 15 March 2017
Average stabilized efficiency values for Si solar cells (156x156mm²)
ITR
PV
20
17
17%
18%
19%
20%
21%
22%
23%
24%
25%
26%
27%
2016 2017 2019 2021 2024 2027
sta
bil
ize
d c
ell
eff
icie
nc
y
BSF cells p-type mc-Si BSF cells p-type mono-Si
PERC/PERT cells p-type mc-Si PERC/PERT cells p-type mono-Si
PERC, PERT or PERL cells n-type mono-Si Silicon heterojunction (SHJ) cells n-type mono-Si
back contact cells n-type mono-Si
Trend: market share of cell concepts
2016: PERC ≈15% (in line w/ IHS Markit)
Trend: stabilized cell efficiencies;
p-type PERC outperforms
Different cell technologyWorld market share [%]
BSF
PERC
other
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
IHS 2016 2016 2017 2019 2021 2024 2027
BSF PERC/PERL/PERT Si-herterojunction (SHJ) back contact cells Si-based tandem
ITR
PV
20
17
IHS
Ma
rkit d
ata
Si-tandem
PERC is gaining market share (20% 2017)
BSF share is shrinking
Back contact + HJ: slow increasing share
Si tandem: under development
p-type mono PERC will reach n-type performance
mc-Si PERC is about to outperform mono BSF
n-type IBC + HJ for highest efficiency applications
stabilized >21% p-type mono PERC is in production
PERC
VDMA | Author ITRPV 2017 Page 27 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRVP – Results 2016
- Si / Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
Module – Materials: front cover material
| Author ITRPV 2017 Page 28 | 15 March 2017
Different front cover materialsWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
non-structured & non-coated front glass AR-coated front glass deeply structured front glass
Expected lifetime of AR-coating on module front glass
ITR
PV
20
17
0
5
10
15
20
25
30
2016 2017 2019 2021 2024 2027
[ye
ars
]
Trend: market share of front cover material Trend: lifetime of AR coating
AR coated glass is mainstream AR coating lifetime will increase to 25 years
VDMA
Module – Processes: interconnection technology
| Author ITRPV 2017 Page 29 | 15 March 2017
Different techologies for cell interconnectionWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
lead-containing soldering lead-free soldering conductive adhesive
Different cell interconnect materialsWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
Cu-ribbon Cu-wires structured foils shingled/overlapping cell
Trend: cell interconnection technology Trend: cell connection material
Expanding market share:
lead free soldering + conductive adhesives
Ribbons/wires will remain most widely
used cell connection material
VDMA
Module – Products: module power outlook
| Author ITRPV 2017 Page 30 | 15 March 2017
Trend of Cell to Module power ratioThroughput increase [%] 2016 = 100%
ITR
PV
20
17
95%
96%
97%
98%
99%
100%
101%
102%
103%
104%
2016 2017 2019 2021 2024 2027
acidic textured multi-Si alcaline textured mono-Si
Module Power for 60-cell (156x156mm²) module
ITR
PV
2017
250
270
290
310
330
350
370
390
2016 2017 2019 2021 2024 2027
Mo
du
le P
ow
er
[Wp
]
BSF p-type mc-Si BSF p-type mono-Si
PERC/PERT p-type mc-Si PERC/PERT p-type mono-Si
PERC, PERT or PERL n-type mono-Si Silicon heterojunction (SHJ) n-type mono-Si
back contact cells n-type mono-Si
Trend: cell to module power ratio (CTM) Trend: module power of 60 cell (156x156mm²)
| Author ITRPV 2017 Page 30 | 15 March 2017
CTM will increase to > 100%
Acidic texturing has higher CTM 60 cell modules 2017:
Mono p-type PERC: 300 W are standard
Multi p-type PERC: 285 W are common
VDMA
Module – Products: framed modules and J-Boxes
| Author ITRPV 2017 Page 31 | 15 March 2017
Fameless c-Si modules World market share [%]
ITR
PV
2017
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
framed frameless
Different frame materialsWorld market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
Aluminum Plastic other
Trend: share of frameless c-Si modules Trend: share of smart J-Boxes "smart" Junction-Box technologyWorld market share [%]
ITR
PV
201
7
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
standard J-Box without additional function microinverter (DC/AC) DC/DC converter
Al-frames will stay mainstream
frameless for niche markets
Standard J-Box remains mainstream
Smart J-Boxes for niche applications
VDMA
Module – Products: module size
| Author ITRPV 2017 Page 32 | 15 March 2017
Different cell dimensions in c-Si modules World market share [%]
ITR
PV
201
7
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
full cell half cell quarter cell
Different module sizes (full cell) World market share [%]
ITR
PV
20
17
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
60-cell 72-cell 96-cell other
Trend: share of cell dimensions Trend: share of module size (full cell)
Full cell will remain main stream
half cell implementation started!
quarter cells – currently a niche
Big is beautiful: 72 cell module share will increase
60 cell modules mainstream until 2020
VDMA
Module – Products: module reliability (new)
| Author ITRPV 2017 Page 33 | 15 March 2017
Waranty requirements & degradation for c-Si PV modules IT
RP
V 2
017
0,0%
0,5%
1,0%
1,5%
2,0%
2,5%
3,0%
3,5%
0
5
10
15
20
25
30
35
2016 2017 2019 2021 2024 2027
de
gra
da
tio
n [%
]
wa
rra
nty
[y
ea
rs]
Performance waranty [years]
Product waranty [years]
Initial degardation after 1st year of operation [%]
Degradation per year during performance waranty [%]
Trend: warranty conditions and degradation for c-Si modules
Product warranty will remain 10 years
Performance warranty 2024+: 30 years
degradation: Initial / linear/year
2016: 3.0 % / 0.7%
2017: 2.5 % / 0.68%
2019+: 2.0 % / 0.68%
2021+: 2.0 % / 0.60%
VDMA | Author ITRPV 2017 Page 34 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRVP – Results 2016
- Si / Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
Systems – Balance of system (BOS) for power plants
| Author ITRPV 2017 Page 35 | 15 March 2017
Cost elemements of PV System in US and EuropeFor Systems > 100 kW
ITR
PV
201755%
45%36% 33% 31% 29%
8%
7%
7%6%
5%5%
13%
12%
11%10%
8%8%
12%
11%
10%10%
9%8%
12%
11%
11%11%
10%
9%
100%
87%
75%70%
64%
58%
0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1
2016 2017 2019 2021 2024 2027
Module Inverter Wiring Mounting Ground
Cost elemements of PV System in AsiaFor Systems > 100 kW
ITR
PV
20
1759%
53%45% 43% 40% 38%
8%
7%
7%6%
6%5%
6%
6%
5%5%
5%5%
13%
13%
12%12%
11%11%
15%
15%
15%15%
15%
11%
100%
94%
84%81%
77%
70%
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2016 2017 2019 2021 2024 2027
Module Inverter Wiring Mounting Ground
Trend: BOS in Europe and US Trend: BOS in Asia
Module costs still significant
Costs in Asia are assumed to be significant lower
VDMA
Systems – Levelized Cost of Electricity (LCoE)
| Author ITRPV 2017 Page 36 | 15 March 2017
Trend: LCoE progress – a minimum approach
Calculated LCOE values for different insolation levels
ITR
PV
2017
0,0770,073
0,065 0,0630,059
0,0540,051
0,0490,043 0,042
0,0390,036
0,039 0,0370,033 0,032 0,030
0,027
970911,8
814,8785,7
746,9
679
0
200
400
600
800
1000
1200
0,00
0,02
0,04
0,06
0,08
0,10
0,12
2016 2017 2019 2021 2024 2027
Assu
med
sys
tem
pri
ce [U
SD
/KW
p]
LC
OE
[U
SD
/kW
h]
1000 kWh/KWp 1500 kWh/kWp 2000 kWh/kWp assumed system price
LCoE depends strongly on local conditions ~5.7 US$ct/kWh lowest auction bidder in GER 2016** (avg. 7.7 $ct)
~2.42 US$ct/kWh possible near Abu Dhabi* today * http://www.pv-tech.org/news/jinkosolar-in-deal-to-build-1.2GWp-solar-plant-in-Abu-Dhabi
** http://www.sunwindenergy.com/photovoltaics/danish-bidders-win-cross-border-pv-tender
System prices
2016: 970 $ / kWp
2027: <680 $ / kWp
LCoE
2016: 3.9 ….. 8 $ct/kWh (GER avg. 7.7 $ct**)
2027: 2.7 ….. 5 $ct/kWh are ralistic
• System live times of 25 years are assumed
Next steps to further reduce LCoE:
extended service live to 30 years
(supported by performance warranty trend)
further efficiency improvements
+ cost down measures
VDMA | Author ITRPV 2017 Page 37 | 15 March 2017
Outline
1. ITRPV Introduction
2. PV Learning Curve and Cost Considerations
3. ITRVP – Results 2016
- Si / Wafer - Materials, Processes, Products
- Cell - Materials, Processes, Products
- Module - Materials, Processes, Products
- Systems
4. Summary and Outlook
VDMA
Outlook: in detail view at PV learning curve
| ITRPV 2017 Page 38 | 15 March 2017
Learning curve for module price as a function of cumutative shipments
10-1106 107
10-1100 101 102 103 104 105 106 107
0.1
1
10
100
0.1
1
10
100
av
era
ge
mo
du
les
ale
sp
ric
e[U
SD
20
16
/Wp
]
100 101 102 103 104 105
cumulative PV module shipments [MW]
historic price data
LR 22.5%
LR 39.0% (2006-2016)
ITRPV 2017
Learning curve for module price as a function of cumulative shipments
103 107
103 104 105 106 107
0.1
1
10
0.1
1
10
av
era
ge
mo
du
les
ale
sp
ric
e[U
SD
20
16
/Wp
]
LR 26.2% - per piece learning
104 105 106
cumulative PV module shipments [MW]
historic price data
LR 22.5%
LR 39.0% (2006-2016)
Wp learning only (2010 -2016)
LR 6.8% - Wp learning only
per piece learning only (2010-2016)
ITRPV 2017
1976-2016: LR= 22.5%
2006-2016: LR= 39.0%
ITRPV finding 2010-2016:
Wp learning ~ 7% (continually)
per piece learning ~26% (market influenced)
Learning was and will always be
a combination of:
efficiency increase
+ continues cost reduction per piece
= cost reduction of PV generated electricity
But how will PV proceed in future?
Approach: logistic growth
exemplified by nature:
VDMA
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140
pla
nt
hig
ht
[cm
]
days after seeding
growth of a Tomato
Tombolino
Spreading of PV – like a plants life: An Experiment
10/26/2016 ITRPV 2017 Page 23 |
PV experiment: Investigation of the growth of a Tomato plant*
watching milestones in a tomato plant’s live
* Plant grown in Thalheim April – July 2016
shooting
singulation
start fertilizing
being in flower
developing fruits
Parameter set: G = 1.12 m k = 0.07; c = 67 d
𝑵 𝒕 =𝑮
𝟏 + 𝒆𝒌(𝒄−𝒕)
VDMA
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140
pla
nt
hig
ht
[cm
]
days after seeding
growth of a Tomato (Tombolino)
Tombolino
Spreading of PV – like a plants life: An Experiment
15 March 2017 | Author: ITRPV 2016 Page 23 |
PV experiment: Investigation of the growth of a Tomato plant*
PV is starting
* Plant grown in Thalheim April – July 2016
shooting
singulation
start fertilizing
being in flower
developing fruits
PV is at the beginning
ITRPV industry outlook:
future PV Installation and
future PV production requirements
0
10
20
30
40
50
60
70
80
90
100
0 20 40 60 80 100 120 140
pla
nt
hig
ht
[cm
]
days after seeding
growth of a Tomato (Tombolino)
AproximationParameter set: G = 1.12 m k = 0.07; c = 67 d
𝑵 𝒕 =𝑮
𝟏 + 𝒆𝒌(𝒄−𝒕)
VDMA
PV market trend until 2050: logistic growth
| ITRPV 2017 Page 41 | 15 March 2017
Installation forecast: Scenario 3 (high)
ITR
PV
20
17
0
200
400
600
800
1.000
1.200
2000 2005 2010 2015 2020 2025 2030 2035 2040 2045 2050
0
1.000
2.000
3.000
4.000
5.000
6.000
7.000
8.000
9.000
10.000
Annual M
ark
et [G
Wp]
Glo
bal I
nsta
llations [G
Wp]
Europe Asia Americas Africa Annual Market Shipments
Approach: 3 scenarios for 190
different countries in 4 regions
Asia / America / Africa / EU
ITRPV finding:
- Shipments until 2016
slightly above all scenarios
- Annual PV market:
335 GWp/a to 800 GWp/a
Replacement rate = key to
overcome down cycles
Evolutionary technology
development works
for all scenarios
Scenario 3 “high”: 9.2 TWp/ 14.3 PWh (< 10 % primary energy)
VDMA
Summary
| ITRPV 2017 Page 42 | 15 March 2017
• Silicon PV will remain a fast developing technology
• Further reductions of c-Si PV manufacturing cost are possible
without sacrificing quality and reliability
cell efficiency improvements will support the cost reduction
• Silicon PV will significantly contribute to future power supply
• We are just at the beginning of PV-market development
VDMA
Thank you
for your attention!
Page 43 | 15 March 2017 | ITRPV 2017
Source: www.siemens.com/presse
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