o(n) layout-coloring for multiple-patterning lithography ... · o(n) layout-coloring for...

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O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida *, Kanak B. Agarwal , Sani R. Nassif , Xin Yuan , Lars W. Liebmann § , Puneet Gupta* [email protected] EE Dept, * Austin Research Lab San Jose Semiconductor R&D Center §

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Page 1: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

O(n) Layout-Coloring for Multiple-Patterning Lithography

and Conflict-Removal Using Compaction

Rani S. Ghaida*, Kanak B. Agarwal†, Sani R. Nassif†, Xin Yuan‡,

Lars W. Liebmann§, Puneet Gupta*

[email protected]

EE Dept, *

Austin Research Lab†

San Jose‡

Semiconductor R&D Center§

Page 2: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Multiple-Patterning Lithography

• Delays in EUV MP is inevitable for sub 20nm tech

– DP/TP in LELE, SADP

• Biggest challenge is coloring conflicts

• E.g., DP in LELE process

Rani S. Ghaida

2

C. Mack, IEEE Spectrum 08

Stitch

Native conflict needs layout change

Page 3: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Overview of the Framework

• Fast linear time coloring

• LP-based compaction for conflict removal

– Simultaneously fixes all conflicts without creating new conflicts

Rani S. Ghaida

3

Design with Conventional

Rules

Layout Simplification

(optional)

Coloring w/ Least Conflicts

Sign-off Conflicts LP for Conflict

Removal w/ Fixed Area

No conflicts

LP for Conflict Removal w/

Area Increase (optional)

MP Layers & Constraint Definition

Option

Option

Page 4: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Preferred Coloring

• Coloring of native conflicts affects efficiency of conflict removal

• Give preference for opposite coloring for certain violations over

others label violations critical vs. less-critical

– E.g., horizontal spacing violation more critical than vertical or

diagonal in case of vertical poly orientation

Rani S. Ghaida

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Bad coloring Good coloring

M1 1st exposure M1 2nd exposure

Native conflict

Poly

Active

Contact

A

C C

A B B

Page 5: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

O(n) Coloring

Rani S. Ghaida

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Violating coloring matters

Non-violating coloring doesn’t

Stitches non-viol b/w violating

Projection

C

D

H

I J

E G

F

K

L

B

A Sub-comp. 1

Sub-comp. 2

Conflict

Graph

230X faster

than ILP coloring

Page 6: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Triple Patterning – Extending 2-Coloring to 3-Coloring

• Common 2-coloring cannot be extended to 3-coloring

– 3-coloring stitches can be almost anywhere!

Rani S. Ghaida

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Projection all parts violating no stitches

No 3-Coloring Solution!

Valid coloring with TP stitch Valid coloring not possible

Unseen candidate stitch

Page 7: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

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TP Coloring Example

• Leverage TP Stitch Capability Stitch at S2S violating parts

• Color violating parts w/ C0/C1-C0/C2-C1/C2 coloring cycle

– Use existing infrastructure of DP coloring

• Works well but not for complex layouts simplifications needed

Rani S. Ghaida

Page 8: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Conflict-Removal Using Compaction

• Color define DRs between DP layers (e.g., M1A/M1B)

– Same-color spacing, ≠ color spacing, M1A/M1B overlap

– Overhang rules with top/bottom layers (union M1A M1B)

• Compaction Full legalization across all layers concurrently

Rani S. Ghaida

8

Design with Conventional

Rules

Layout Simplification

(optional)

Coloring w/ Least Conflicts

Sign-off Conflicts LP for Conflict

Removal w/ Fixed Area

No conflicts

LP for Conflict Removal w/

Area Increase (optional)

MP Layers & Constraint Definition

Option

Option

Page 9: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Sacrificing Unnecessary Layout Features

Rani S. Ghaida

9

Design with Conventional

Rules

Layout Simplification

(optional)

Coloring w/ Least Conflicts

Sign-off Conflicts LP for Conflict

Removal w/ Fixed Area

No conflicts

LP for Conflict Removal w/

Area Increase (optional)

MP Layers & Constraint Definition

Option

Option

Pin Segments Redundant Contacts

Recommended rule

Page 10: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Conflict Removal Results

• DP-compatible cells

– No area overhead for simple cells

– Modest area overhead (at most 9%) for complex cells and macros

– Few sacrificed redundant contacts (CA)

• Less than 1 min in real time for largest macro (460 trans.)

Rani S. Ghaida

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No conflicts, 6.2% area increase

Original 5 conflicts

Same area, 2 conflicts

Page 11: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Effects of Sacrifice and Preferred Coloring

• Need both enhancement methods

• If enhancements not applied 2X more conflicts in final layout

Rani S. Ghaida

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With Fixed Area

Page 12: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

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Final Notes

• Problems with Newly Created Tips

– One way use pessimistic projection non-optimal

– Less of a problem when using compaction-based legalization

• Methodology applicable for SADP, only need

– A layout-coloring method

– A set of design rules for SADP-compatible layout

Conflicts from

new tips

Page 13: O(n) Layout-Coloring for Multiple-Patterning Lithography ... · O(n) Layout-Coloring for Multiple-Patterning Lithography and Conflict-Removal Using Compaction Rani S. Ghaida*, Kanak

Thank you

Questions during poster session

Rani S. Ghaida

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