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FlexRay Communications System

Physical Layer EMC Measurement Specification

Version 2.1

FlexRay Physical Layer EMC Measurement Specification Disclaimer

Version 2.1 December-2005 of 49

DISCLAIMER

This specification as released by the FlexRay Consortium is intended for the purpose of information only. The use of material contained in this specification requires membership within the FlexRay Consortium or an agreement with the FlexRay Consortium. The FlexRay Consortium will not be liable for any unauthorized use of this Specification.

Following the completion of the development of the FlexRay Communications System Specifications commercial exploitation licenses will be made available to End Users by way of an End User's License Agreement. Such licenses shall be contingent upon End Users granting reciprocal licenses to all Core Partners and non-assertions in favor of all Premium Associate Members, Associate Members and Development Members.

All details and mechanisms concerning the bus guardian concept are defined in the FlexRay Bus Guardian Specifications.

The FlexRay Communications System is currently specified for a baud rate of 10 Mbit/s. It may be extended to additional baud rates.

No part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from the publisher.

The word FlexRay and the FlexRay logo are registered trademarks.

Copyright © 2004-2005 FlexRay Consortium. All rights reserved.

The Core Partners of the FlexRay Consortium are BMW AG, DaimlerChrysler AG, Freescale GmbH, General Motors Corporation, Philips GmbH, Robert Bosch GmbH and Volkswagen AG.

FlexRay Physical Layer EMC Measurement Specification Table of contents


Table of contents

CHAPTER 1 INTRODUCTION ..................................................................................................................... 4 1.1 Scope ................................................................................................................................................... 4 1.2 References ........................................................................................................................................... 5 1.3 Terms and definitions ........................................................................................................................... 6 1.4 List of abbreviations.............................................................................................................................. 6

CHAPTER 2 REQUIRED TESTS ................................................................................................................. 7 2.1 RF and transient disturbances ............................................................................................................. 7

2.1.1 Overview to required tests .............................................................................................................. 7 2.1.2 General test conditions for RF and transient disturbances ............................................................ 8 2.1.3 Emission of RF disturbances ........................................................................................................ 17 2.1.4 Immunity to RF disturbances ........................................................................................................ 23 2.1.5 Immunity to transients................................................................................................................... 33

2.2 ESD 42 2.2.1 Overview to required tests ............................................................................................................ 42 2.2.2 Test configuration ......................................................................................................................... 42 2.2.3 Test set-up .................................................................................................................................... 44 2.2.4 Test procedure and parameters ................................................................................................... 46

APPENDIX A TEST CIRCUIT BOARDS.................................................................................................... 47 A.1 RF and transient tests ........................................................................................................................ 47 A.2 ESD test ............................................................................................................................................. 49

FlexRay Physical Layer Specification Introduction


Chapter 1 Introduction

1.1 Scope

This EMC measurement specification shall be used as a standardized common scale for EMC evaluation of FlexRay transceivers for wired communication in automotive applications. It can be applied for stand-alone transceivers and integrated transceiver cells (transceiver and bus guardian IC). For this reason, this instruction does not include any limits, but only test procedures, failure criteria, test set-ups, and test signals concerning:

• the immunity against radiated disturbances (malfunction), • the immunity against transients (malfunction and damage), • the immunity against electrostatic discharges (damage) and • the emissions of narrowband disturbances.

The final judgment of the tested device, whether if it can be released or not is still to be decided by the customer. For principle test no external protection circuits at the bus lines are regarded in this test instruction in order to keep the rating limited to the transceiver chip only. Tests with additional passive filter components at the bus lines give more information about the EMC behavior of the FlexRay transceiver in an application (e.g. automotive application). The tests with the possible filter networks (split termination with grounding capacitor and common mode choke) are defined as optional requirements.

The described EMC tests are based on a present Stand-alone FlexRay transceiver type. Therefore EMC test definitions for this IC- type are made. These definitions include product specific features, which are not included in the FlexRay physical layer specification [1]. In case of ASIC’s with an integrated FlexRay transceiver, the test conditions cannot be fixed for any type of IC. Therefore, if it is possible, the test conditions of standard stand-alone FlexRay transceiver should be used. The configuration of the physical layer of the FlexRay bus is fixed in any case.



1.2 References

[PS05] FlexRay Communications System - Protocol Specification, v2.1 Revision A, FlexRay Consortium, December 2005

[BG04] FlexRay Communications System - Bus Guardian Specification, v2.0, FlexRay Consortium, June 2004

[BD05AN] FlexRay Communications System - E-PL application note, v2.1 Revision A, FlexRay Consortium, December 2005

[1] FlexRay Communication System, Electrical Physical Layer Specification, Version 2.1 Revision A, December 2005

[IEC1] IEC 61967-1, Integrated circuits, Measurement of electromagnetic emissions, 150 kHz to 1 GHz – Part 1: General and definitions

[IEC2] IEC 61967-4, Integrated circuits, Measurement of electromagnetic emissions, 150 kHz to 1 GHz – Part 4: Measurement of conducted emissions – 1 Ω/150 Ω direct coupling method

[IEC3] IEC 62132-1, Integrated circuits, Measurement of electromagnetic immunity, 150 kHz to 1 GHz – Part 1: General and definitions

[IEC4] IEC 62132-4, Integrated circuits, Measurement of electromagnetic immunity, 150 kHz to 1 GHz – Part 4: Direct RF power injection method

[IEC5] IEC 61000-4-2, Electromagnetic compatibility, Part 4-2: Testing and measurement techniques – Electrostatic discharge immunity test

[ISO1] ISO 7637-2, Road vehicles, electrical disturbances by conduction and coupling – Part 2: Vehicles with nominal 12 V or 24 V supply voltage– Electrical transients along supply lines only

[ISO2] ISO 7637-3, Road vehicles, electrical disturbances by conduction and coupling – Part 3: Vehicles with nominal 12 V or 24 V – Electrical transmission by capacitive and inductive coupling via lines other than supply lines



1.3 Terms and definitions

FlexRay specific terms and definitions are listed in [PS05].

1.4 List of abbreviations

RF: radio frequency

DPI: Direct Power Injection

CW: Continues Wave

AM: Amplitude Modulation

FlexRay Physical Layer EMC Measurement Specification Required Tests


Chapter 2 Required Tests

2.1 RF and transient disturbances

2.1.1 Overview to required tests An overview to the requested test regarding RF and transient disturbances is given below.

Required test Evaluation Transceiver configuration

Transceiver mode

RF emission - Node or Active Star

Normal

Normal

Stand By

Node

Sleep

RF immunity Malfunction

Active Star Star transmit / Star receive

Normal

Stand By

Node

Sleep

Malfunction


Transient immunity

Damage Node Normal

Bold style: standard function according to [1] italic style: product specific option normal style: optional function (if implemented)

Table 2-1: Requested RF and transient tests



2.1.2 General test conditions for RF and transient disturbances

2.1.2.1 Test conditions

The general test conditions are given below.

Parameter Value

Voltage supply VBAT (14 ± 0,2) V

Voltage supply VCC Default value: (5 ± 0,1) V

Voltage supply VIO Default value: (5 ± 0,1) V

Test Temperature (23 ± 5) °C

Table 2-2: General Test conditions



2.1.2.2 Test configurations

For testing the EMC behavior of the FlexRay transceiver to evaluate • the RF and transient immunity and narrowband emission at the bus lines, voltage supply line VBAT and

the Wake line and • narrowband emission at the voltage supply lines VCC, VIO, and VBUF

a configuration of two powered transceivers in node application and/or in active star application in a FlexRay network has to be set up according to Figure 2-1. By this way both transceivers are configured for node application and/or for active star application.

TransceivernetworkDecoupling

Node / Active Star 1

BP

VCC

, VIO

, VBU

F

GN

D

INH1/2

Coupling/Decoupling

Bus

RF1

VCC

GND

VCCGND

VCC

GND

VBat

mode

VBatVBATVBat

VBat

RF2

Filter

RF3

Wake

RX

IMP1

IMP2

IMP3

TX

networksW

ake

Bus filter(optional)

BM

Bustermination

TXEN

RXENERRN

TRXD0/1

TransceivernetworkDecoupling

Node / Active Star 2

BP

VCC

, VIO

, VBU

F

GN

D

INH1/2

VBat

mode

RX

TX

Wak

e

Bus filter(optional)

BM

Bustermination

TXEN

RXENERRN

TRXD0/1

RF4

EMI1

EMI2

EMI3

EMI4

EMI5

EMI6

Vcc, Vio, VBuf

Figure 2-1: Overview of a minimum configuration of a FlexRay system for emission and immunity tests

against transients and RF disturbances of external pins

An example for the test circuit diagram for the filter and the transceiver network in node application is given in Figure 2-1. For star application see Figure 2-3.



R36

1K

X19

INH2_1

R37

1K

X20

INH1_1C12

100n

L11)a

CM Choke

C11

100n

C15

100n

R143k3

R15100k

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18

INH2 1INH1 2EN 3VIO 4

WAKE15 VBAT14 ERRN13 RXEN12

A1

FlexRay TC

R1156

R1256

C16)a4.7n

C13

100nC14

33µ

Vcc

JP11

R13

33k

R16100k

R34

1K

X17

TXEN1

R35

1K

X18

TX1

X16

RX1

Vcc

R5310k

STBN1

R5410k

BGE1

R5510k

EN1

R32

1K

X15

RXEN1

R31

1K

X14

ERRN1

R43

1K

X26

INH2_2

R44

1K

X27

INH1_2

L21)a

CM Choke

C25

100n

R243k3

R25100k

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

JP21

R23

33k

R26100k

R41

1K

X24

TXEN2

R42

1K

X25

TX2

X23

RX2

Vcc

R5810k

STBN2

R5910k

BGE2

R6010k

EN2

R39

1K

X22

RXEN2

R38

1K

X21

ERRN2

L1

47 µH

L2

C42330 p

C41

1 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D2

e.g. BYD17K

C4322uF

VBAT

VBAT

Node 1

Node 2

Coupling/

Filter

a) optional, can be used for additional test

e.g. WE 742 750 4 e.g. WE 742 750 4

C26)a4.7n

C22

100n

C21

100n

Vcc

C23

100nC24

33µ

Vcc

Decoupling networks

Figure 2-2: Example for the circuit diagram of the minimum network for the bus system with node

configuration of transceiver for measuring emission and immunity in respect to RF disturbances and transients

FlexRay node:

A FlexRay node consists of bus termination network, optional filter on the bus lines, transceiver and decoupling networks for monitored pins. The transceiver is configured in node application (TRXD0 and TRXD1 shorted to ground). Node 1 operates as a transmitter for a bit pattern that simulates a FlexRay message to be received and monitored at the RxD-output ports of all nodes in the configured network.

The resistors at the Wake pin (R13, R14, R23, R24) are to be placed corresponding to the manufacturers specifications in the following way:

• resistors R13, R23: maximum specified value (Default: 3,3 kΩ) • resistors R14, R24: minimum specified value (Default: 33 kΩ)



Every control input for operation modes (EN, STBN, BGE) shall be connected according to the manufacturers specifications for a setting either to normal, standby or sleep mode. Connections to the peripheral control equipment must be decoupled from the test circuit board.

For RF-decoupling of all monitored outputs (RXEN, ERRN, INH1, INH2) as well as the inputs (TxD, TXEN) resistors R = 1 kΩ are used. At all voltage supply ports (VBAT, VCC, VIO, VBUF) of the transceiver buffer ceramic capacitors shall be used corresponding to the manufacturers specifications (default value: 100 nF).

In respect to avoid a floating voltage at pins INH1 and INH2 (standby or sleep mode) pull down resistors (R = 100 kΩ) are used.

The preferred packaging type for ceramic capacitors and resistors is SMD 0805.

The optional bus filter components split termination capacitor (C16, C26) and common mode choke (L11, L21) are be used for additional measurements. The common mode choke must by the released as an FlexRay choke (e.g. 100 µH bifilar type).

Bus termination:

The termination shall be realized at every FlexRay node.

Filter:

The central voltage supplies VBAT and VCC are buffered by electrolytic capacitors C43 = 22 µF and C46 = 22 µF. For the decoupling of the external connected voltage supplies VCC and VBAT two-stage LC-filters are connected to each of them (L1, C41, L2, C42 at VBAT and L3, C44, L4, C45 at VCC). The parts L1 and L2 should be a SMD type choke (e.g. EPCOS B82432-A1473) and L2 and L4 are carried out by 6-hole-ferrites (e.g. Würth Elektronik 742 750 4). The jumper J1 is used for decoupling the supply VBAT from the two-stage filter in case of a directly connected transient test signal and supply via the input IMP2.



C12

100n

L11)a

CM Choke

C11

100n

C15

100n

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

Vcc

R46

1K

X32

TRXD1_1

R45

1K

X31

TRXD0_1

C22

100n

L21)a

CM Choke

C21

100n

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

C23

100nC24

33µ

R17220

R18220

L1

47 µH

L2

C42330 p

C411 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D1

C4322uF

VBAT

VBAT

Star 1

Star 2

Filter

a) optional, can be used for additional tests

C13

100nC14

33µ

Vcc

C15

100n

Vcc

X34

TRXD1_2

X33

TRXD0_2

R17220

R18220

Coupling/ Decoupling networks

C16)a4.7n

C26)a4.7n

e.g. WE 742 750 4 e.g. WE 742 750 4

Figure 2-3: Example for the circuit diagram of the minimum network for the bus system with active star configuration of transceiver for measuring the immunity in respect to RF disturbances and transients

FlexRay Active Star:

For EMC analyses of transceiver in active star configuration the basic test set-up is similar to node application.

The differences are: • EN, STBN, BGE shorted to ground, • TXD, TXEN shorted to VCC, • (VBUF disconnected from VCC) and • Data input / output are TRXD0 and TRXD1.



2.1.2.3 Definitions for transceiver communication in the minimum network The used communication signal transmitted by transceiver 1 depends on the configuration (node or Active Star) and the respective partial test: Test signals for node configuration

Parameter TxD 1 TXEN 1

Apply to pin TxD TXEN

Signal type FlexRay data frame including 4 bit TSS and FES Square wave

Duty cycle 50 % for data frame 60 %

Frequency 5 MHz for data frame 40 kHz

Bit rate 10 MBit/s for data frame

Synchronization between TxD and TXEN signal

TSS FES TSS> 1 µs

IDLE IDLEData frame

TXEN

TxDHigh

Low

High

Low

0 0 0 0 1 0

TSS FES TSS> 1 µs> 1 µs

IDLE IDLEData frameData frame

TXEN

TxDHigh

Low

High

Low

0 0 0 0 1 00 0 0 0 1 0

Table 2-3: Definition of communication test signals in node configuration

A synchronization of TXD and TXEN signals is required. This should be done according to [1]. Test signals for active star configuration

Parameter TRXD0 TRXD1

Apply to pin TRXD0 TRXD1

Signal type Burst of rectangular pulses to simulate transmission start sequence (TSS), n data bits, frame end sequence (FES) combined with an idle phase (see figure below)

TSS FES TSS> 1 µs

IDLE IDLEData frame

TRXD1High

Low

TRXD0High

Low0 0 0 0 1 0

TSS FES TSS> 1 µs> 1 µs

IDLE IDLEData frameData frame

TRXD1High

Low

TRXD0High

Low0 0 0 0 1 00 0 0 0 1 0

Table 2-4: Definition of communication test signals in active star configuration



2.1.2.4 Evaluation of bus system immunity

2.1.2.4.1 Damage tests

For evaluation of immunity at damage tests a function test of the transceiver is defined and includes: • send- and receive-functionality, • Error detection, • Wake-up capability by the bus and by the Wake pin and • operation mode setting

within the specifications given by the semiconductor manufacturer.

2.1.2.4.2 Malfunction tests The immunity of the FlexRay bus system shall be tested for the different transceiver modes according to the scheme below:

Configuration Mode Type of disturbance Failure validation on pin

Normal RF / Transients RxD, RXEN, INH1, INH2, ERRN

Stand By RF / Transients RxD, RXEN, INH1, INH2

Node

Sleep RF / Transients RxD, RXEN, , INH2


RF / Transients TRXD0, TRXD1

Bold style: standard function according to [1] italic style: product specific option normal style: optional function (if implemented)

Table 2-5: Basic scheme for immunity evaluation

The failure validation applies to both transceivers. As soon as at least one transceiver in the network fulfils the fault criteria, the error event for this test has occurred.

In node configuration with Stand by and sleep mode it will be tested on an unwanted Wake-up caused by RF or transient disturbances. If an unwanted Wake-up occurs, all nodes must set to sleep mode before the next step of test can be proceeded.



Fault criteria for failure validation in node configuration:

Mode Type of disturbance

TxD signal

TXEN signal

Max. voltage variations)1 [V]

Max. time variations)1 [ns]

RxD)2,6 RXEN)2,7 ERRN)2 INH1/2)3 RxD RXEN)7 ERRN INH1/2

Normal, busy state

RF / Transient TxD1 TXEN1 ± 0,9 ± 0,9 ± 0,9 - 5 ± 4, ± 8

± 200 – )4 – )4

Normal, idle state)8

RF / Transient TxD1 TXEN1 ± 0,9 – )4

Stand By RF / Transient without without ± 0,9 ± 0,9 – )5 + 2 – )4 – )4 – )4 – )4

Sleep RF / Transient without without ± 0,9 ± 0,9 – )5 + 2 – )4 – )4 – )4 – )4

)1 The given values are the maximum allowed variation to the undisturbed signal. The undisturbed voltage level depends on the tested transceiver. For the immunity evaluation the

monitored pin of all 2 transceivers in the network with and without applied disturbances shall be compared by using a DSO. For evaluation of the RxD pin in normal mode only node 2 (receiving node) shall be evaluated.

)2 The definition for the maximum deviation of the voltage level on the monitored pin was done according to the transceiver data sheet.

)3 The definition for the maximum deviation the voltage levels on the pins INH1 and INH2 was done under the following limit conditions:

• Vdrop_typ FlexRay = 0,8 V, • Von_typ_Volt.Reg. = 2,5 V, • Voff_typ_Volt.Reg. = 0,8 V and • possible RF superposition on pins INH1/2 with RF influencing of VBAT an amplitude of approx. 2 V.

)4 independent of the duration )5 no evaluation, because the output has no function in this mode )6 For monitoring of the RxD pin a 50 Ω input impedance of the DSO can be used to minimize the low pass

characteristic of test set-up (consideration of voltage dividing factor!). The DSO trigger condition for monitoring the RxD pin is defined to: 10. falling edge of RxD signal (at 50 % of amplitude) while TXEN signal is at low state.

)7 For monitoring the RXEN pin the DSO trigger condition is defined to: falling edge of TXEN signal. The hole data phase of the frame shall be displayed and evaluated by mask test.

)8 The DSO trigger condition for monitoring the RxD pin at the idle phase of the transmission sequence is defined to: TXEN signal switch to high state, signal evaluation after a time shift of 8 µs for a duration of 10 µs.

Table 2-6: Fault criteria for immunity tests with node configuration



Fault criteria for failure validation in active star configuration:

Mode Type of disturbance

TRXD0 TRXD1 Max. voltage variations )1 [V]

Max. time variations )1 [ns]

TRXD0)2,3 TRXD1)2,3 TRXD0 TRXD1

Star transmit /

Star receive

RF / Transient TRXD0 TRXD1 ± 0,9 ± 0,9 ± 4, ± 8

± 4, ± 8

italic style: product specific option )1 The given values are the maximum allowed variation to the undisturbed signal. The undisturbed voltage level depends on the tested transceiver. For the immunity evaluation the

monitored pin of all 2 transceivers in the network with and without applied disturbances shall be compared by using a DSO.

)2 The definition for the maximum deviation of the voltage level on the monitored pin was done according the transceiver data sheet.

)3 For monitoring of the TRXD0 and TRXD1 pins a 50 Ω input impedance of the DSO should be used to minimize the low pass characteristic of test set-up (consideration of voltage dividing factor!).

Table 2-7: Fault criteria for immunity tests



2.1.3 Emission of RF disturbances

2.1.3.1 Test configuration

2.1.3.1.1 Test circuit diagram

C12

100n

L11)a

CM Choke

C11

100n

C15

100n

R143k3

R15100k

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

C16)a4.7n

C13

100nC14

33µ

Vcc

JP11

R13

33k

R16100k

R34

1K

X17

TXEN1

R35

1K

X18

TX1

X16

RX1

Vcc

R5310k

STBN1

R5410k

BGE1

R5510k

EN1

L21)a

CM Choke

C25

100n

R243k3

R25100k

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

JP21

R23

33k

R26100k

R41

1K

X24

TXEN2

R42

1K

X25

TX2

X23

RX2

R5810k

STBN2

R5910k

BGE2

R6010k

EN2

L1

47 µH

L2

C42330 p

C41

1 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D2

e.g. BYD17K

C4322uF

VBAT

VBAT

Node 1

Node 2

Filter


e.g. WE 742 750 4 e.g. WE 742 750 4

C26)a4.7n

C22

100n

C21

100n

C23

100nC24

33µ

Vcc

R68120

X13EMI6

R6951

C686,8n

R70120

X12EMI5

R7151

C706,8n

R72120

X11EMI4

R7351

C726,8n

Decoupling internal supplies

VccVcc

R1

120R2

120

C1

4,7nX7

RF1C2

4,7n

R64

120

X4

EMI2

R6551

R6151

C64

6,8n

R66

120

X1EMI3

R6751

C66

6,8n

Decoupling Wake

Decoupling VBat

Decoupling bus linesL10

4,7 µH

L11

4,7 µH

L12

4,7 µH


configuration of transceiver for measuring emission of RF disturbances



For measurement of emission at voltage supply pins VCC, VIO and VBUF decoupling inductances must be used for high impedant decoupling of the analyzed pin from the central voltage supply. Usable components are SMD Ferrite beads or SMD inductances with |Z| > 400 Ω in the analyzed frequency range. These decoupling inductances shall be used only for emission measurements at these pins and must be removed (shorted) at all other required measurements.

2.1.3.1.2 Decoupling of disturbances

The decoupling of disturbances shall be realized by passive components. The maximum component tolerance is 1 %. For components used for symmetrical coupling (in pairs), a maximum tolerance of 0,1 % is demanded, which can be confirmed by measurement.

Port Purpose Components

EMI1 RF decoupling on bus lines In pairs RC-serial circuit, matching resistor: R1,2 = 120 Ω, C1,2 = 4,7 nF, R61 = 51 Ω,

EMI2 RF decoupling on VBAT Voltage divider and DC block: R64 = 120 Ω, R65 = 51 Ω, C64 = 6,8 nF

EMI3 RF decoupling on Wake Voltage divider and DC block: R66 = 120 Ω, R67 = 51 Ω, C66 = 6,8 nF

EMI4 RF decoupling on VCC Voltage divider and DC block: R68 = 120 Ω, R69 = 51 Ω, C68 = 6,8 nF

EMI5 RF decoupling on VBUF Voltage divider and DC block: R70 = 120 Ω, R71 = 51 Ω, C70 = 6,8 nF

EMI6 RF decoupling on VIO Voltage divider and DC block: R72 = 120 Ω, R73 = 51 Ω, C72 = 6,8 nF

Table 2-8: Overview of decoupling ports

Decoupling port EMI1:

The capacitors C = 4,7 nF realize the DC decoupling of bus lines from the connected measurement equipment. The decoupling resistors R = 120 Ω build a power splitter for symmetrical decoupling of RF disturbances. The resistor R = 51 Ω builds the voltage divider according to IEC 61967-4 [IEC2].

Decoupling ports EMI2 to EMI6:

The capacitor C = 6,8 nF realize the DC-decoupling of the measured line from the connected measurement equipment. The resistors R = 120 Ω and R = 51 Ω build the voltage divider according to IEC 61967-4 [IEC2].



2.1.3.2 Test set-up

2.1.3.2.1 General

The measurement of the RF disturbances emission of the transceiver shall be carried out according to Figure 2-5 in the time domain and the frequency domain according to IEC 61967 parts 1 and 4 [IEC1], [IEC2]. All networks for transient and RF-coupling must be disconnected from the test circuit.

IEC-Bus

Monitoring and Stimulation

DSO Pattern gen.

RxD

Control PCRF- Analyzer

Test board

RF PCB connector

RF PCB connector external Power supply

VBAT, VCC, GND

1

2

Decoupling bus line

SA

IEC-Bus

EMI1

mode control unit

EMI6

TxD, TXEN

Decoupling: Bus lines EMI1 VBAT EMI2 Wake EMI3 VCC EMI4 VBUF EMI5 VIO EMI6

Figure 2-5: Test set-up for measurement of RF disturbances

Test equipment requirements:

Spectrum analyzer / Measuring receiver according to CISPR 16

DSO with probes (≥ 1MΩ) bandwidth ≥ 500 MHz

Test board according to Appendix A

Pattern generator

External power supply

Mode control unit (if possible remotely controlled by the PC)

PC



2.1.3.2.2 Decoupling of bus lines

Measurements in the frequency domain:

The input of the measuring instrument shall be connected with the port EMI1 of the test board according to Figure 2-6.

EMI1

RF- Analyser (Spectrum analyser/ Measuring receiver)

Test board

120 BP

BM

4,7 nF

120 4,7 nF

C1

C2

R1

R2 Ri 50

R6151

Figure 2-6: Decoupling network for emission measurement on bus lines

Measurements in the time domain:

To determine the emission of the bus lines in the time domain the signals BP and BM shall be measured directly on the test board with high impedance probes during communication. The measuring instrument or software should be used to build the sum of the signals. The connections RF1 and RF4 are not used for this measurement and shall be disconnected.

2.1.3.2.3 Decoupling of Wake-up and power supply lines

The input of the measuring instrument shall be connected with the ports EMI2 to EMI6 of the test board according to Figure 2-7.

EMI 2/3/4/5/6

RF- Analyser (DSO/ Spectrum Analyser

Test board

120

WakeVBAT VCC VBUF VIO

R

Ri 50

R51

6,8 nF

C

Figure 2-7: Decoupling network for emission measurement on Wake and power supply lines

2.1.3.2.4 Check of test board decoupling

The insertion losses (S21 measurement) of the respective transceiver signal pad to the ports EMI1 to EMI6 of the test board (without transceiver) shall be measured and documented in the test report.



2.1.3.3 Test procedure and parameters

For characterization of the emission level measurements with the following test parameters, a diagram shall be performed and documented in the test report:

Measurement in frequency domain:

Mode Decoupling

Port Pin TxD signal TXEN signal

Normal EMI1 BP, BM

EMI2 VBAT

EMI3 Wake

EMI4 VCC

EMI5 VBUF

EMI6 VIO

TxD 1 TXEN 1

Optional additional tests: - split termination capacitor - split termination capacitor and CM choke

Normal EMI1 BP, BM TxD 1 TXEN 1

Bold style: tests for standard function according to [1] normal style: tests for optional function (if implemented)

Table 2-9: Required emission measurement in frequency domain



The settings of the Spectrum analyzer or Measuring receivers are given below.

Measuring equipment Spectrum analyzer Measuring receiver

Detector Peak

Frequency range 0,15 to 1000 MHz

Resolution bandwidth (RBW) 150 kHz to 30 MHz: 30 MHz to 500 MHz:

10 kHz 100 kHz

9 kHz

120 kHz

Video bandwidth (VBW) equal to RBW -

Numbers of passes 10 (max hold)

Measurement time per step - ≥ 1 ms

Frequency sweep time ≥ 20 s -

Frequency step width 150 kHz to 30 MHz: 30 MHz to 1000 MHz:

-

≤ 9 kHz

≤ 120 kHz

Table 2-10: Settings of the measurement device for measurement of emission in the frequency domain

Measurement of the sum of the bus signals in the time domain:

The emission in the time domain shall be measured with the respective test signals TX1 and TXEN1 and documented in the test report. The bus signals shall be measured directly on the test board with high-impedance probes.



2.1.4 Immunity to RF disturbances



R36

1K

X19

INH2_1

R37

1K

X20

INH1_1C12

100n

L11)a

CM Choke

C11

100n

C15

100n

R143k3

R15100k

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

C16)a4.7n

C13

100nC14

33µ

Vcc

JP11

R13

33k

R16100k

R34

1K

X17

TXEN1

R35

1K

X18

TX1

X16

RX1

Vcc

R5310k

STBN1

R5410k

BGE1

R5510k

EN1

R32

1K

X15

RXEN1

R31

1K

X14

ERRN1

R43

1K

X26

INH2_2

R44

1K

X27

INH1_2

L21)a

CM Choke

C25

100n

R243k3

R25100k

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

JP21

R23

33k

R26100k

R41

1K

X24

TXEN2

R42

1K

X25

TX2

X23

RX2

Vcc

R5810k

STBN2

R5910k

BGE2

R6010k

EN2

R39

1K

X22

RXEN2

R38

1K

X21

ERRN2

L1

47 µH

L2

C42330 p

C41

1 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D2

e.g. BYD17K

C4322uF

VBAT

VBAT

Node 1

Node 2

Filter


e.g. WE 742 750 4 e.g. WE 742 750 4

C26)a4.7n

C22

100n

C21

100n

Vcc

C23

100nC24

33µ

Vcc

R1

120R2

120

C1

4,7nX7

RF1C2

4,7n

R62

909R63

909

C62

1nFX10

RF4C63

1nF

C3

6,8n

X5

RF2

C4

6,8n

X2

RF3

Coupling Wake

Coupling VBat

Coupling bus lines


configuration of transceiver for measuring the RF immunity



C12

100n

L11)a

CM Choke

C11

100n

C15

100n

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

Vcc

R46

1K

X32

TRXD1_1

R45

1K

X31

TRXD0_1

C22

100n

L21)a

CM Choke

C21

100n

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

C23

100nC24

33µ

R17220

R18220

L1

47 µH

L2

C42330 p

C411 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D1

C4322uF

VBAT

VBAT

Star 1

Star 2

Filter


C13

100nC14

33µ

Vcc

C15

100n

Vcc

X34

TRXD1_2

X33

TRXD0_2

R17220

R18220

C16)a4.7n

C26)a4.7n

e.g. WE 742 750 4 e.g. WE 742 750 4

R1

120R2

120

C1

4,7nX7

RF1C2

4,7n

R62

909R63

909

C62

1nFX10

RF4C63

1nF

C3

6,8n

X5

RF2

Coupling VBat

Coupling bus lines

Figure 2-9: Example for the circuit diagram of the minimum network for the bus system with active star

configuration of transceiver for measuring the RF immunity



2.1.4.1.2 Coupling and decoupling of disturbances

The coupling and decoupling of RF disturbances shall be realized by passive components. The maximum components tolerance is 1 %. For components used for symmetrical coupling (in pairs), a maximum tolerance of 0,1 % is demanded, which can be confirmed by measurement.

The correctness off all parts of the coupling ports must be checked after all injection tests again.


RF1 RF coupling on bus lines In pairs RC-serial circuit: R1,2 = 120 Ω, C1,2 = 4,7 nF

RF2 RF coupling on VBAT C3 = 6,8 nF

RF3 RF coupling on Wake C4 = 6,8 nF

RF4 RF decoupling of bus lines In pairs RC-serial circuit: R62,63 = 909 Ω, C62,63 = 1 nF

Table 2-11: Overview of RF coupling and decoupling ports

Coupling ports RF1 to RF3:

The coupling capacitors (C = 4,7 / 6,8 nF) realize the DC decoupling of the tested port to the connected test or measurement equipment. In case of bus lines the coupling resistors (R = 120 Ω) build a power splitter for symmetrical coupling of RF disturbances.



2.1.4.2 Test set-up

2.1.4.2.1 General

The measurement of the RF immunity of the FlexRay transceiver shall be carried out by Direct Power Injection (DPI test method) according to IEC 62132 parts 1 and 4 [IEC3], [IEC4]. A general test set-up is illustrated in Figure 2-10.

All networks for transient coupling and emission measurement must be disconnected from the test circuit. For test level definition the forward RF power shall be used.

Monitoring and

Stimulation

DSOPattern Gen.

Test board

RF PCB connector

RF PCB connector

external Power supply

VCC, VBAT GND

1

2

Coupling: Bus lines RF1 VBAT RF2 Wake RF3

Mode control unit

Power transition head

RF-Generation

Power meter

RF-Generator

IEC-Bus

RF-Amplifier

control PC

RF1 RF2 RF3 RF4

RF- PA

Decoupling: Bus lines RF4

TxD, TXEN (TRXD0, TRXD1)

RxD (RXEN, ERRN, INH1, INH2, TRXD0, TRXD1)

Figure 2-10: Test set-up for DPI measurements


RF-Generator f = 1 - 1000 MHz, incl. amplitude modulation

RF-Amplifier PCW ≥ 10 W

Power meter with directional coupler f = 1 - 1000 MHz


DSO bandwidth ≥ 500 MHz

RF-PA RF Power Analyzer (50 Ω)

Pattern generator



PC



2.1.4.2.2 Coupling on bus lines

The wideband power amplifier output shall be connected with port RF1 of the test board via a transition power sensor header (or a directional coupler with separate power sensors).

The RF disturbances coupling network consists of capacitors C1 and C2 and resistors R1 and R2 in accordance with Figure 2-11.

RF1Ri

RF- Generator and Amplifier

Test board

120 BP

PM

4,7 nF

120 4,7 nF

C1

C2

R1

R2 50 ≈

Figure 2-11: Coupling network for DPI measurements on bus lines

The output RF4 shall be connected with a RF power analyzer (50 Ω) according to Figure 2-12.

RF4

RF- Analyser (DSO/ Spectrum Analyser)

Test board

909 BP

BM

1 nF

909 1 nF

C62

C63

R62

R63 Ri 50

Figure 2-12: Decoupling network for DPI measurements, decoupling of Bus lines

The decoupling factor can be calculated with the input impedance of a 50 Ω measuring instrument and in the case of the inserted decoupling network to:

2 1,0 BMBP

InstrumentVVV +

=



2.1.4.2.3 Coupling on power supply line VBAT


The RF disturbances coupling network consists of capacitor C3 according to Figure 2-13.

RF2Ri


Test board

VBAT

6,8 nF

C3

50 ≈

Figure 2-13: Coupling network for DPI measurements on VBAT

2.1.4.2.4 Coupling on Wake-up line


The RF disturbances coupling network consists of capacitor C4 according to Figure 2-14.

RF3Ri


Test board

Wake1

6,8 nF

C4

50 ≈

Figure 2-14: Coupling network for DPI measurements on Wake

2.1.4.2.5 Check of test board coupling

The insertion losses (S21 measurement) of the ports RF1 to RF3 to the respective transceiver signal pad of the test board (without transceiver) shall be measured and documented in the test report.




To determine the immunity of the Transceiver against narrow-band disturbances (defined in IEC 62132 part 1 [IEC3]) measurements with the following test parameters shall be carried out:

Parameters

Range Step

1 to 10 0,25

10 to 100 1

100 to 200 2

200 to 400 4

Frequency [MHz]

400 to 1000 10

Presentation of immunity Immunity threshold curve with forward power as the parameter

Minimum forward power 10 dBm (10 mW)

Maximum forward power 36 dBm (about 4 W)

Power step size 0,5 dB

Power control procedure Searching for malfunction while power is increased. A combined control procedure to reduce the measurement time can be used.

Example: Procedure for each frequency:

1. Start with maximum forward power or with the power of immunity for the last frequency

2. Test with half power in each case of malfunction 3. increase the power by power step size to malfunction

Dwell time 1 s

Modulation CW; AM 80 %, 1 kHz )1

)1 use peak convention for the forward power ( CWAM PP ˆˆ = ) according to [IEC3]

Table 2-12: Test parameters for DPI measurements

The test shall be performed and documented according the following schemes:



DPI tests in node configuration:

Mode Coupling Failure validation on pin

RxD Port Pin TxD signal

TXEN signal

Parameter

4ns 8ns idle

RXEN ERRN INH1 INH2

symmetric X X X X X X X

5 % unsymmetrical )1,2 X X

RF1 BP,BM


RF2 VBAT - X X X X X X

Normal

RF3 Wake

TxD1 TXEN1

- X X X X X X

symmetric X X X X

5 % unsymmetrical )1,2 X

RF1 BP,BM


RF2 VBAT - X X X X

Stand By

RF3 Wake

- -

- X X X X

symmetric X X X X


RF1 BP,BM


RF2 VBAT - X X X X

Sleep

RF3 Wake

- -

- X X X X

Optional additional tests) 2: - split termination capacitor - split termination capacitor and CM choke

Normal RF1 BP,BM TxD1 TXEN1 symmetric X X X X X X

Stand By RF1 BP,BM - - symmetric X X X X X

Sleep RF1 BP,BM - - symmetric X X X X

X Bold style: tests for standard function according to [1] X italic style: tests for product specific option X normal style: tests for optional function (if implemented)

)1 To adjust the imbalance of coupling the resistance values of the two coupling resistors R1 and R2 shall be changed according to Table 2-15.

)2 Test shall be done only with CW disturbances.

Table 2-13: Required DPI measurements for function test in node configuration



DPI tests in active star configuration:


TRXD0_2 TRXD1_2 Port Pin TRXD0_1 signal

TRXD1_1 signal

Parameter

4 ns 8 ns 4 ns 8 ns

symmetric X X X X

5 % unsymmetrical )1,2 X X RF1 BP,BM


Star transmit/ Star receive

RF2 VBAT

TRXD0 TRXD1

- X X X X

Optional additional tests) 2: - split termination capacitor - split termination capacitor and CM choke

Star transmit/ Star receive

RF1 BP,BM TRXD0 TRXD1 symmetric 4 ns 4 ns


)1 To adjust the imbalance of coupling the resistance values of the two coupling resistors R1 and R2 shall be changed according to Table 2-15.

)2 Test shall be done only with CW disturbances.

Table 2-14: Required DPI measurements for function test in active star configuration

R1 [Ω] (BP) R2 [Ω] (BM)

Symmetry 120 120

5 % Unbalance 126 114

10 % Unbalance 132 108

Table 2-15: Combination of resistors for coupling on DPI measurements

For each measurement an immunity threshold curve with the forward power as the parameter has to be carried out and presented in the test report in a diagram.

To give more information about the failure mechanisms in case of a disturbed communication on the bus additional investigations can be done.

Measurement and documentation of the signal on pin RxD of transceiver 2 under influence at least at 4 single frequencies and 3 defined power levels with coupling on the bus line and normal mode of the transceiver. The selection of the single frequencies depends on the immunity threshold curves. Default frequency values are



1 MHz, 10 MHz, 30 MHz and 100 MHz. The recommended power levels are 36 dBm, 30 dBm and the power level at the immunity threshold curve for the corresponding frequency.

10

15

20

25

30

35

40

1 10 100 10000,1

1

10

100

Limit PforCW, PforAM, PforCW, VrfAM, Vrf

DPI- Measurement Flex RayTransceiver: type xMode: node / normalRF- Coupling: Bus, symm.Failure validation : RX - 4ns

[MHz]

[dBm] [VAC_RMS]

Figure 2-15: Example for presentation of DPI test results



2.1.5 Immunity to transients



R36

1K

X19

INH2_1

R37

1K

X20INH1_1

C12

100n

L11)a

CM Choke

C11

100n

C15

100n

R143k3

R15100k

Vcc

TXEN 6RX 7

VBUF20 VCC19BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

C16)a4.7n

C13

100nC14

33µ

Vcc

JP11

R13

33k

R16100k

R34

1K

X17TXEN1

R35

1K

X18

TX1

X16

RX1

Vcc

R5310k

STBN1

R5410k

BGE1

R5510k

EN1

R32

1K

X15

RXEN1

R31

1K

X14

ERRN1

R43

1K

X26

INH2_2

R44

1K

X27INH1_2

L21)a

CM Choke

C25

100n

R243k3

R25100k

TXEN 6RX 7

VBUF20 VCC19BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

JP21

R23

33k

R26100k

R41

1K

X24

TXEN2

R42

1K

X25

TX2

X23

RX2

Vcc

R5810k

STBN2

R5910k

BGE2

R6010k

EN2

R39

1K

X22

RXEN2

R38

1K

X21

ERRN2

L1

47 µH

L2

C42330 p

C41

1 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D2

e.g. BYD17K

C4322uF

VBAT

VBAT

Node 1

Node 2

Filter


e.g. WE 742 750 4 e.g. WE 742 750 4

C26)a4.7n

C22

100n

C21

100n

Vcc

C23

100nC24

33µ

Vcc

Coupling Wake

Coupling VBat

Coupling bus lines

X3

IMP3

C7

1nf

X6IMP2

D1

e.g. BYD17K

C5

1nX9

IMP1C6

1n


configuration of transceiver for measuring the transient immunity



C12

100n

L11)a

CM Choke

C11

100n

C15

100n

Vcc

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TC

R1156

R1256

Vcc

R46

1K

X32

TRXD1_1

R45

1K

X31

TRXD0_1

C22

100n

L21)a

CM Choke

C21

100n

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A2

FlexRay TC

R2156

R2256

C23

100nC24

33µ

R17220

R18220

L1

47 µH

L2

C42330 p

C411 n

L3

47 µH

L4

C45330 p

C441 n

VCC

X29VCC

X28VBat

X30GND

JP1

C4622uF

D1

C4322uF

VBAT

VBAT

Star 1

Star 2

Filter


C13

100nC14

33µ

Vcc

C15

100n

Vcc

X34

TRXD1_2

X33

TRXD0_2

R17220

R18220

C16)a4.7n

C26)a4.7n

e.g. WE 742 750 4 e.g. WE 742 750 4

Coupling VBat

Coupling bus lines

X6

IMP2

D1

e.g. BYD17K

C5

1nX9

IMP1C6

1n

Figure 2- 17: Example for the circuit diagram of the minimum network for the bus system with active star

configuration of transceiver for measuring the transient immunity



2.1.5.1.2 Coupling of disturbances

The coupling of transient disturbances shall be realized by passive components. The maximum component tolerance is 1 %. For components used for symmetrical coupling (in pairs), a maximum tolerance of 0,1 % is demanded, which can be confirmed by measurement.

The correctness off all parts of the coupling ports must be checked after all injection tests again.


IMP1 Transient coupling on bus lines in pairs: C5,6 = 1 nF

IMP2 Transient coupling on VBAT Diode D1

IMP3 Transient coupling on Wake C7 = 1 nF

Table 2-16: Overview of transient coupling ports

Coupling ports IMP1 and IMP3:

The coupling capacitors (C = 1 nF) simulate the capacitive disturbance coupling of the supply line to the corresponding line with 100 pF/m and a coupling length of 10 m.

Coupling port IMP2:

Transients at voltage supply line VBAT shall be coupled via a reverse protection diode.



2.1.5.2 Test set-up

2.1.5.2.1 General

The measurement of the transient immunity of the FlexRay transceiver shall be carried out by direct galvanic coupling and Direct Capacitive Coupling (DCC test method) according to [ISO1], [ISO2]. A general test set-up is illustrated in Figure 2-18.

All networks for RF coupling and emission measurements must be disconnected from the test circuit.

IEC-Bus

Monitoring and Stimulation

DSO Pattern gen.

TxD, TXEN (TRXD0, TRXD1)

RxD (RXEN, ERRN, INH1, INH2, TRXD0, TRXD1)

Control PC

Test pulse generator

Test board

RF PCB connector

RF PCB connector external Power supply

VBAT, VCC, GND

1

2

Imp1Coupling VBAT

Coupling Bus lines

Imp2Imp3Coupling

Wake

Mode control unit

Figure 2-18: Test set-up for direct galvanic and capacitive transient coupling


Test pulse generator according to ISO 7637-2: Draft 2002-12 [ISO1]


DSO bandwidth ≥ 500 MHz

Pattern generator



PC



2.1.5.2.2 Coupling on bus lines

The test pulse generator shall be connected with the port IMP1 of the test board by a short coaxial cable. The transients are coupled with a set of two capacitors to the bus lines according to Figure 2-19.

BP

BM1 nF

IMP1 1 nFC5

C6

Ri

Pulse generator

Test board

Figure 2-19: Coupling network for direct capacitive coupling on bus lines

2.1.5.2.3 Coupling on power supply line VBAT

The test pulse generator shall be connected with the port IMP2 of the test board by a short coaxial cable. The voltage supply (VBAT) is provided by the pulse generator. The filter network shall be disconnected from the central power line supply VBAT by opening the jumper JP1 in order to avoid a reaction of the filter network to the coupled voltage on the pin of the transceiver. The coupling path for the VBAT line is shown in Figure 2-20.

VBAT

IMP2Ri

Test board

VBAT

Pulse generator

Filter D1

Figure 2-20: Coupling network for direct galvanic coupling on VBAT

2.1.5.2.4 Coupling on Wake-up line

The test pulse generator shall be connected with the port IMP3 of the test board by a short coaxial cable. By this way the transients are coupled with a capacitor according to Figure 2-21 to the Wake-up line of the transceiver 2 in the minimal test network.

IMP3Ri

Test board

Wake1

1 nF

C7

Pulse generator Figure 2-21: Coupling network for direct capacitive coupling on Wake



2.1.5.2.5 Check of test board coupling

The transition of the test pulses from the ports IMP1, IMP2 and IMP3 to the respective pad for the transceiver signals shall be measured on the test board (without transceiver) and documented in the test report.


2.1.5.3.1 Malfunction test

To prove transceiver immunity against transient tests with standard pulses (defined in ISO 7637-2 [ISO1]) measurements with the following test parameters shall be carried out:

Test pulse )1 Pulse repetition frequency [Hz]

(1/T1 )1)

Test duration [min] Ri [Ω] Remarks

1)2 2 1 10 t2 = 0 s

2a 2 1 2

3a 10 1 50

3b 10 1 50

)1 according to ISO 7637-2 [ISO1]

)2 parameters for 12 V-Systems

Table 2-17: Parameters for transient malfunction test

As a test result the respective peak voltage values of each standard pulse (see Table 2-17) shall be documented for the immunity of the bus system. The maximum test values are given below:

Test pulse Vs [V]

1 - 100

2a + 50

3a - 150

3b + 100

Table 2-18: Maximum test voltages for transient malfunction test

The amplitudes of the standard impulses shall be increased up to the malfunction function and / or for the respective peak values with an increment of 10 V. For every voltage level, a dwell time of 5 s is required. The maximum voltage level for the immunity achieved in this case shall be proved with a dwell time of 1 minute.



The measurements for malfunction test are to be carried out and documented according to the following schemes.

Transient malfunction tests in node configuration:


RxD Port Pin TxD signal

TXEN signal

4 ns 8 ns idle

RXEN ERRN INH1 INH2

IMP1 BP, BM X X X X X X X

IMP2 VBAT X X X X X X

Normal

IMP3 Wake

TxD1 TXEN1

X X X X X X

IMP1 BP, BM X X X X

IMP2 VBAT X X X X

Stand By

IMP3 Wake X X X X

IMP1 BP, BM X X X X

IMP2 VBAT X X X X

Sleep

IMP3 Wake

- -

X X X X


Normal IMP1 BP, BM TxD1 TXEN1 X X X X X X

Stand By IMP1 BP, BM - - X X X X

Sleep IMP1 BP, BM - - X X X X


Table 2-19: Required transient tests for malfunction with node configuration



Transient malfunction tests in active star configuration:


TRXD0_2 TRXD1_2 Port Pin TRXD0_1 signal

TRXD1_1 signal

4 ns 8 ns 4 ns 8 ns

IMP1 BP, BM TRXD0 TRXD1 X X X X Star transmit /

Star receive IMP2 VBAT TRXD0 TRXD1 X X X X


Star transmit /

Star receive

IMP1 BP, BM TRXD0 TRXD1 4 ns 4 ns

X Bold style: test for standard function according to [1] X italic style: tests for product specific option X normal style: tests for optional function (if implemented)

Table 2-20: Required transient tests for malfunction with active star configuration



2.1.5.3.2 Damage test

In addition a damage test with the fault criteria:

• Complete function test according section 2.1.2.4 and

• Leakage current measurement

with the following test parameters shall be performed:

Test pulse )1 Vs [V] Pulse repetition frequency [Hz]

(1/T1 )1)

Test duration [min]

Ri [Ω] Remarks

1)2 - 100 2 10 10 t2 = 0 s

2a + 50 2 10 2

3a - 150 10 10 50

3b + 100 10 10 50

)1 according to ISO 7637-2 [ISO1]

)2 parameters for 12 V-Systems

Table 2-21: Parameters for transient damage test

The measurements for damage test are to be carried out and documented according to the following scheme:

Transient damage tests in node configuration:

Mode Coupling Failure validation

Port Pin Test signal

Normal IMP1 BP, BM TxD 1

IMP2 VBAT TxD 1

IMP3 Wake TxD 1

after each single test

Bold style: test for standard function according to [1] normal style: tests for optional function (if implemented)

Table 2-22: Required transient tests for damage with node configuration

The fault criteria are evaluated after each single test (coupling on IMP1, IMP2 and IMP3).



2.2 ESD

2.2.1 Overview to required tests An overview to the requested test regarding ESD is given below:

Required test Evaluation Transceiver configuration

ESD Damage Passive (without voltage supply)

Table 2-23: Requested ESD test

2.2.2 Test configuration

2.2.2.1 Test circuit diagram

ESD immunity tests shall be carried out with a transceiver without voltage supply and with a minimum-wiring network in accordance with Figure 2-22.

X4

DP1

X5

GND

R1

3k3X3

DP2

X2

DP4

X1

DP3

C1100nF

TXEN 6RX 7

VBUF20 VCC19

BM17

TRXD011

BGE 8STBN 9TRXD1 10

GND16 TXD 5

BP18



A1

FlexRay TCC2100nF

C3100nF

Figure 2-22: Example for the circuit diagram of the test set-up for ESD measurements

FlexRay Transceiver:

The FlexRay transceiver shall be tested without voltage supply and with a minimum external wiring network. The value for the series resistor on the pin Wake (R1) should be chosen according to the definitions of the semiconductor manufacturer with the possible minimum value (default value: 3,3 kΩ). For decoupling of all power supply lines ceramic capacitors (C = 100 nF) shall be used.



Default values for C 1 to C 3:

Capacitance: 100 nF ± 10 %

Material: X7R

Rated voltage: 50 V

Type: SMD 1206 or 0805

The resistor shall be of the SMD design 1206 or 0805 with a maximum tolerance of 1%. The exact type ID and manufacturer of the used capacitors and resistors are to be documented in the test report.

Special environmental conditions:

The requirements of IEC 61000-4-2 [IEC5] climatic environmental conditions shall be fulfilled.

2.2.2.2 Coupling of disturbances

The ESD coupling shall be implemented in a direct galvanic way by using a contact discharge module according to [IEC5] (C = 150 pF, R = 330 Ω). For this purpose, the discharge points DP 1 to 4 – carried out as rounded vias in the layout of the ESD test board – are directly connected by a trace length (15 (-0 +5) mm) with the respective pin of the transceiver.

Discharge point

Purpose Components

DP1 ESD coupling for BP

DP2 ESD coupling for BM

DP3 ESD coupling for VBAT

DP4 ESD coupling for Wake

direct connection


Figure 2-23: Overview of ESD coupling points



2.2.3 Test set-up

2.2.3.1 General

For testing ESD immunity of bus, power supply lines as well as the Wake-up line (if available) measurements according to [IEC5] shall be done. The test set-up is shown in Figure 2-24.

ESD Test board

GND

Discharge padsGround plane ESD Test board

Connection point Ground plane

Test generator with contact discharge module

ESD Simulator

Ground reverse lineTest generator

connection PIN GND to Ground plane ESD Test board

Ground plane (minimal 0,5 x 0,5 m)

ESD Test board fixture Surface connection ESD Test board to Test board support

Surface connection Test board fixture to ground plane

Figure 2-24: Test set-up for ESD measurements

The ground plane with a minimum size of 0,5 x 0,5 m builds the reference ground plane for the ESD test set-up and must be connected with the electrical grounding system of test laboratory. The ESD test generator ground cable shall be connected to this reference plane. The test board fixture realizes the positioning of the ESD test board and the electrical connection of the ESD test board ground plane with the reference ground plane. This connection must have a low impedance (R < 25 mΩ) and should be build by a surface contact.

Test Equipment Requirements:

ESD Test generator according to IEC 61000-4-2 [IEC5]; contact discharge module (IEC-Relays) with discharge capacitor 150 pF and discharge resistor 330 Ω

ESD Test board according to appendix A.2



2.2.3.2 Coupling on bus, Wake-up and voltage supply line

On testing the tip of the ESD Test generator discharge module shall be directly contacted with one of the discharge pads DP1 to 4 of the ESD Test board.

BPBM VBAT Wake

DP1/2/3/4R

ESD- Generator

ESD Test board

150 pF C330 Ω

Figure 2-25: Coupling network for ESD measurements

Functional test and V-I-characteristic measurement are to be carried out on the soldered transceiver. A specific test extension frame or IC adapter may be used for this purpose for contacting all pins of the transceiver.



2.2.4 Test procedure and parameters

To determine transceiver immunity against ESD damage tests according to [IEC5] shall be done for every required pin with the following parameters:

Parameters

Type of discharge contact

Discharge circuit R = 330 Ω, C = 150 pF [IEC5]

Discharge voltage levels 1 kV to VESD_damage (max. 30 kV)

Discharge voltage steps 1 kV up to VESD = 15 kV, then fixed values VESD = 20, 25, 30 kV

Test procedure 1. Reference measurement of function and V/ I-characteristic of all pins to be tested (pin to GND)

2. 3 Discharges with positive polarity on discharge pad DP3 (VBAT) with 5 s delay between the discharges

3. Connect the pin or discharge pad via a 1 MΩ resistor to the ground reference plane to get zero potential on the pin

4. Failure validation

5. Proceed with points 2 to 4 with discharge pad DP4 (Wake-up)

6. Proceed with points 2 to 4 with discharge pad DP2 (BM)

7. Proceed with points 2 to 4 with discharge pad DP1 (BP)

8. Proceed with point 2 to 7 with negative polarity

9. Proceed with point 2 to 9 with the next higher ESD test voltage up to damage of each tested pin

Failure validation • Complete function test according section 2.1.2.4

• Deviation of V/ I-characteristic


Table 2-20: Test parameters and required test for ESD

The test shall be done at the specified ESD test voltages with a minimum of 3 transceivers.

The failure validation (functional test and V-I-characteristic measurement) is to be carried out on soldered transceiver. A specific test extension frame or IC adapter may be used for this purpose for contacting all needed pins of the transceiver.

FlexRay Physical Layer EMC Measurement Specification Test Circuit Boards


Appendix A Test Circuit Boards

A.1 RF and transient tests

For RF and transient tests with the used minimal network a printed circuit board shall be used. To ensure good RF-parameters of the coupling and decoupling networks symmetric nodes 1 to 2 and a two layer PCB in minimum should be used. The length of the coupling paths on the test board should be kept as short as possible. For better shielding all connections to the test peripheral of the test board (except for the filtered 'on'-ends for VBAT, VCC and GND) should be realized through coaxial printed circuit board sockets.

The insertion losses of ports RF1 to RF3 as well as EMI1 to EMI6 to the respective transceiver signal pads of the test board shall be measured and documented in the test report.

Examples for Test board for the FlexRay minimal network:

Figure A-1: Example Test board FlexRay, Top-Layer, node configuration



Figure A-2: Example Test board FlexRay, Bottom-Layer, node configuration



A.2 ESD test

For ESD tests a printed circuit board shall be used. A two-layer construction of the PCB shall be chosen with extensive ground area. The pads for the discharge points DP 1 to 4 are to be carried out in such a way, that a safe contact to the discharge tip of the testing generator is guaranteed. The passive components of the minimal wiring network shall be placed in direct proximity of the transceiver.

The insulation distance between the signal lines and pads of the passive components and the extensive ground area should be chosen in such a way, that a disruptive discharge at a test voltage of 8 kV is impossible at these points.

Further requirements apply to the ESD Test board:

Trace length between transceiver pads

and discharge point: 15 (-0 + 5) mm

Track width of the conducting path: 0,254 mm (10 mil)

Substrate material: FR4

Thickness substrate: 1,5 mm

The test adapter used for functional and leakage current examination makes direct contacting of the transceiver pins possible.

Examples for ESD test board for FlexRay transceiver:

Figure A-3: Example ESD test board FlexRay transceiver, Top- and Bottom-Layer

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