and optimization for digital systems - penn engineering · 2020. 9. 18. · ese370: circuit-level...
TRANSCRIPT
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ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems
Lec 6: September 18, 2020MOS Model
Penn ESE370 Fall2020 – Khanna
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You are Here: Transistor Edition
! Previously: simple models (0th and 1st order)" Comfortable with basic functions and circuits
! This lecture and next week(4 lectures)" Detailed semiconductor discussion" MOSFET phenomenology " Don’t Blink!
! Rest of term" Implications of the MOS device
2Penn ESE370 Fall2020 – Khanna
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Today
! MOS Structure! Basic Fabrication ! Semiconductor Physics
" Metals, insulators" Silicon lattice" Band gaps" Doping" Field Effects
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MOS
! Metal Oxide Semiconductor
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MOS
! Metal – gate! Oxide – insulator separating gate from
semiconductor" Ideally: no conduction from gate to semiconductor
! Semiconductor – between source and drain! See why gate input is capacitive?
semiconductor
gatesourcedrain
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semiconductor
gatesourcedrain
(MOS) Capacitor (preclass 1)
! Charge distribution and field?! How much charge on plates?
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1F
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Idea
! Semiconductor – can behave as metal or insulator! Voltage on gate induces an electrical field ! Induced field attracts (repels) charge in
semiconductor to form a channel" Semiconductor can be switched between conducting and
not conducting " Hence “Field-Effect” Transistor
semiconductor
gatesourcedrain
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Source/Drain Contacts
! Contacts: Conductors # metallic" Connect to metal wires that connect transistors
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Fabrication
! Start with Silicon wafer! Dope silicon! Grow Oxide (SiO2)! Deposit Metal! Photoresist mask and etch to
define where features go
https://youtu.be/35jWSQXku74?t=119Time Code: 2:00-4:30
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Dimensions
! Channel Length (L)! Channel Width (W)! Oxide Thickness (Tox)
! Process named by minimum length " 22nm # L=22nm
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Semiconductor Physics
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Conduction
! Metal – conducts! Insulator – does not conduct! Semiconductor – can act as either
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Why does metal conduct? (preclass 2)
! (periodic table)
http://chemistry.about.com/od/imagesclipartstructures/ig/Science-Pictures/Periodic-Table-of-the-Elements.htm
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Why does metal conduct? (preclass 2)
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Gold Silver Copper Zinc
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Conduction
! Electrons move! Must be able to “remove” electron from atom or
molecule
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Atomic States
! Quantized Energy Levels (bands)" Valence and Conduction Bands
! Must have enough energy to change level (state)
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Thermal Energy
! Except at absolute 0" There is always free energy " Causes electrons to hop around
" ….when there is enough energy to change states
" Energy gap between states determines energy required
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Silicon Atom (preclass 3)
! How many valence electrons?
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Silicon
! 4 valence electrons" Inner shells filled" Only outer shells contribute to chemical interactions
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Silicon-Silicon Bonding
! Can form covalent bonds with 4 other silicon atoms
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Silicon Lattice
! Forms into crystal lattice
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Silicon Ingot
22
1 impurity atom per 10 billion silicon atoms
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Silicon Lattice
! Cartoon two-dimensional view
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Outer Orbital?
! What happens to outer shell in Silicon lattice?
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Energy?
! What does this say about energy to move electron?
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Energy State View
Valance Band – all states filled
Ene
rgy
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Energy State View
Valance Band – all states filled
Ene
rgy
Conduction Band– all states empty
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Energy State View
Valance Band – all states filled
Ene
rgy
Conduction Band– all states empty
Band Gap
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Band Gap and Conduction
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Band Gap and Conduction
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Band Gap and Conduction
Ev
Ec
Semiconductor
1.1ev
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1eV = 160 zeptojoules (10-21 J)
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Doping
! Add impurities to Silicon Lattice" Replace a Si atom at a lattice site with another
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Doping
! Add impurities to Silicon Lattice" Replace a Si atom at a lattice site with another
! Add a Group 15 element" E.g. P (Phosphorus)" How many valence electrons?
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Doping
! Add impurities to Silicon Lattice" Replace a Si atom at a lattice site with another
! Add a Group 15 element" E.g. P (Phosphorus)" How many valence electrons?
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Doping with P
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Doping with P
! End up with extra electrons" Donor electrons
! Not tightly bound to atom" Low energy to displace" Easy for these electrons
to move
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Doped Band Gaps
! Addition of donor electrons makes more metallic" Easier to conduct
Ev
Ec
Semiconductor
1.1ev ED0.045ev
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Localized
! Donor electron is localized" Won’t go far if no low energy states nearby
! Increasing doping concentration" Ratio of P atoms to Si atoms" Decreases energy to conduct
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Capacitor Charge
! Remember capacitor charge
+ + + + + + + +
- - - - - - - - - semiconductor
gatesourcedrain
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MOS Field?
! What does “capacitor” field do to the doped semiconductor channel?
- -
Vgs=0No field
- -- -
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MOS Field?
! What does “capacitor” field do to the doped semiconductor channel?
+ + + +
- - -Vcap>0
- -
Vgs=0No field
- -- -
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MOS Field?
! What does “capacitor” field do to the doped semiconductor channel?
- -
Vgs=0No field
+ + + + +
- - - - - -=Vgs>0
Conducts
+ + + +
- - -Vcap>0
- -- -
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+ + + + +- - - - - -
- - - - - -
MOS Field Effect
! Charge on capacitor" Attract or repel charges to form channel" Modulates conduction" Positive
" Attracts carriers" Enables conduction
" Negative?" Repel carriers
" Disable conduction
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- -- -- - - -
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Doping
! What happens if we replace Si atoms with group 13 atom instead?" E.g. B (Boron)" Valance band electrons?
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Doping
! What happens if we replace Si atoms with group 13 atom instead?" E.g. B (Boron)" Valance band electrons?
B
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Doping with B
! End up with electron vacancies -- Holes" Acceptor electron sites
! Easy for electrons to shift into these sites" Low energy to displace" Easy for the electrons to move
" Movement of an electron best viewed as movement of hole
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Doped Band Gaps
! Addition of acceptor sites makes more metallic" Easier to conduct
Ev
Ec
Semiconductor
1.1ev EA0.045ev
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Field Effect?
! Effect of positive field on doped Silicon?
Vgs=0No field
+ ++ +
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Field Effect?
! Effect of positive field on doped Silicon?
Vgs=0No field + + + +
- - -Vcap>0
+ ++ +
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Field Effect?
! Effect of positive field on doped Silicon?
Vgs=0No field
+ + + + +=
Vgs>0No conduction
+ + + +
- - -Vcap>0
+ ++ +
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Field Effect?
! Effect of negative field on doped Silicon?
+ +
Vgs=0No field +
+ + +
- - -Vcap<0
+ +
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Field Effect?
! Effect of negative field on doped Silicon?
+ +
Vgs=0No field
+ + + + +=
Vgs<0Conduction
++ + +
- - -Vcap<0
- - -
+ +
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MOSFETs
! Donor doping" Excess electrons" Negative or N-type material " NFET
! Acceptor doping" Excess holes" Positive or P-type material" PFET
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PN Junction
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Doped Silicon
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-----
----
-
Excess holes Excess electrons
-=hole=electron
N-typeP-type
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PN Junction
56Penn ESE 370 Fall 2020 - Khanna
--
-----
----
---------
--------• PN junction causes a depletion region to form
• Electrons diffuse from N-type to P-type• Holes diffuse from P-type to N-type
• Diffusion current caused by diffusion of carriers
-=hole=electron
N-typeP-type
--------
Hole DiffusionElectron Diffusion
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PN Junction
57Penn ESE 370 Fall 2020 - Khanna
--
-----
----
---------
--------• PN junction causes a depletion region to form
• Electrons diffuse from N-type to P-type• Holes diffuse from P-type to N-type
• Diffusion current caused by diffusion of carriers• Equilibrium achieved when Vbi, built-in potential, is formed across the
depletion region• Drift current cause by E-field due to Vbi to counteract diffusion
current
-=hole=electron
N-typeP-type
--------
Hole DiffusionElectron Diffusion
Hole Drift
Electron Drift
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Drift/Diffusion Currents
! Diffusion current" Current caused by semiconductor diffusion of holes and
electrons
! Drift current" Current due to movement of holes and electrons caused
by force from potential difference induced e-field
Penn ESE 370 Fall 2020 - Khanna 58
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PN Junction – Forward Biasing
59Penn ESE 370 Fall 2020 - Khanna
N-typeP-type
--
---
- ---
-----------
--------• Forward biasing connect positive terminal to p-type and negative terminal to
n-type• Holes/electrons pushed towards depletion region, causing it to narrow• The applied voltage e-field continues to narrow the depletion region (i.e
reduce the depletion e-field)• current flows through the device from p-type to n-type
-=hole=electron
+ -
Depletion E-field
Applied E-field
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PN Junction – Reverse Biasing
60Penn ESE 370 Fall 2020 - Khanna
N-typeP-type
--
--
---
-----
• Reverse biasing connect positive terminal to n-type and negative terminal to p-type• Holes/electrons attracted away from depletion region, causing it to widen
• No current flows through the device • If reverse bias increases past breakdown voltage, the depletion e-field
increases until breakdown occurs and reverse biased current flows causing thermal damage to junction
-=hole=electron
+-
Depletion E-field
-------
-------
-------
------- ----
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Big Ideas: MOSFET
! Semiconductor can act like metal or insulator! Use electric field to modulate conduction state of
semiconductor
- - - - - -
+ + + + +
61Penn ESE370 Fall2020 – Khanna
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Admin
! HW 2 due Monday
! Reminder: Raul’s F 1-3pm office hours moved to Sa 1-3pm
! More Fabrication Videos:" From sand to silicon (intel) -
https://www.youtube.com/watch?v=Q5paWn7bFg4" How microchips are made -
https://www.youtube.com/watch?v=F2KcZGwntgg
62Penn ESE370 Fall2020 – Khanna