www.invensas.comsales@invensas.com

3025 Orchard Parkway San Jose, CA 95134 +1 408.321.6000

MEMS devices often require a vacuum or pressurized cavity structure surrounding the sensing elements. The integrity and hermeticity, of the

bond layers between the cavity structure, the MEMS device and the associated logic device is critical to the proper function of the integrated product. Currently,

the industry employs a variety of techniques such as eutectic, anodic, thermo-compression, and glass frit bonding. All of these techniques require long

duration processing at high temperatures, leading to constraints on materials selection, lower process throughput and ultimately higher overall cost.

ZiBond and Direct Bond Interconnect (DBI) are low temperature bonding technologies that deliver the high

hermeticity bond interfaces required for MEMS production, with higher throughput and lower process cost compared to traditional bonding techniques.

• Multi-functional 3D Integration

• Wafer level bonding at room temp

• High hermeticity

• Smaller footprint - eliminates wire-bond

• Higher bonding yield and throughput

• Reduces defects

Key Benefits

MEMS Device with ZiBond® Bonding & DBI® 3D Interconnect

Small, Reliable and Cost Effective Multi-Functional Integrated Solution

Accelerometer

Microphone

Gyroscope

Temperature Sensor

Magnetometer

Relative Humidity Sensor

Pressure Sensor

Gas Sensor

Create the new generation of MEMS devices with world class wafer bonding and 3D interconnect technologies from Invensas

3D Integration for MEMS Devices

MEMS Structure

Bond Pad

Dialectric

DBI Interconnect

CreatesHermetic Seal MEMS-CMOS

DBI Interconnect Thru Silicon Via (TSV)

Vacuum-Sealed Cavity

MEMS Wafer

CMOS IC Wafer

Si Cap Wafer ZiBond (Dielectric)

Dielectric

SemiconductorTechnologies

www.invensas.comsales@invensas.com

3025 Orchard Parkway San Jose, CA 95134 +1 408.321.6000

Direct Bond Interconnect (DBI) technology is a low temperature

hybrid direct bonding solution that allows wafers or die to be

bonded with exceptionally fine pitch 3D electrical interconnect.

DBI can also minimize the need for Thru Silicon Vias (TSVs).

DBI technology is in high volume production today.

DBIProcess

ZiBond Process

HomogeneousDirect Bonding

Hybrid Bonding withMetal Interconnect

Chemical MechanicalPolishing

Chemical MechanicalPolishing

Align & Contact withoutExternal Pressure

Align & Contact withoutExternal Pressure

Plasma

LOW

TEMP

BATC

H AN

NEAL

ACTIV

ATIO

NW

AFER

CMP

ROOM

TEMP

BOND

ING

Silicon Wafer

Dielectric

Plasma

Silicon Wafer

Silicon WaferVery Thin Dielectric

Metal

Silicon Wafer

Silicon Wafer

Silicon Wafer

Dielectric

Silicon

Silicon DielectricInterconnect

Silicon

Silicon

3D Interconnect Metals

Cu, Ni

Same as ZiBond

Room Temperature

3D Interconnect Pitch

Bond Interface Materials

Substrates

Scalable to <1µm pitch1.6µm demonstrated6µm in high volume production

Same dielectrics as ZiBond with integrated metal interconnect

Bonding Temperature

Anneal Temperature

Equipment Industry standard wafer alignment and bonding equipment

150 -300ºC (application dependent)

75-300ºC (application dependent)

Bond Interface Materials

Substrates

BondingTemperature

SiO(TEOS, Thermal, Silane)

SiN(CVD or PECVD)

SiON(PECVD)

Room Temperature

Si, Glass, InP, GaAs, GaN, SiC, LiTaO3, LiNbO3, Sapphire

SiCN(PECVD)

Anneal Temperature

ZiBond technology is a low temperature homogeneous direct

bonding solution that forms a strong bond between wafers or die

with the same or different coefficients of thermal expansion (CTE).

ZiBond technology is in high volume production today.

Equipment

ZiBond Technology

DBI Technology

Industry standard wafer alignment and bonding equipment

Metal Bond Pad

Very Thin Dielectric

Interconnect

Features

Features