3-d envelope finite element (evfe) solver with pml boundary conditions for microwave integrated...
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3-D envelope finite element (EVFE) solver with PMLboundary conditions for microwave integratedcircuits
W. Yao and Y.E. Wang
Abstract: A perfectly matched layer (PML) formulation is developed for 3-D envelope finiteelement (EVFE) solvers. The PML performance is tested against different numbers of layers anddifferent smax values. The results show that the PML can provide sufficient absorption of incidentwaves when proper parameters are chosen. Numerical tests also show that this 3-D EVFEalgorithm with PML boundary conditions is unconditionally stable as the time intervals increase.Finally, the 3-D EVFE solver equipped with PML boundary conditions has been applied to themodelling of microwave integrated circuits such as MMIC interconnects and on-chip parasiticstructures. Good agreements with existing simulation results are obtained with improvedcomputational efficiency.
1 Introduction
Radio frequency (RF) or monolithic microwave integratedcircuits (MMICs) have been widely used in moderncommunication systems. These integrated circuits oftenprocess digitally modulated signals where the basebandinformation modulates on the RF carrier. Traditionally,electromagnetic transient analysis tools such as the finite-difference time-domain (FDTD) or finite-element time-domain (FETD) methods have been very useful inanalysing interconnects in microwave circuits, because oftheir capability to simulate a broadband response of thestructure. However, when the signal bandwidth to carrierfrequency ratio is very small in certain components anddevices, such as a high-Q filter, traditional transient analysesare no longer computationally efficient, as the time-domainsolvers require a great number of time steps to finishsimulating the waves. To achieve the maximum efficiency ofthe time-domain solvers, it is proposed to solve the time-domain envelope of the wave through a technique called theenvelope finite element (EVFE) method [1–5]. In such amethod, the carrier information is de-embedded from thenarrowband modulated signal. Thus only the complexsignal envelope is sampled and analysed during every timestep. The simulated bandwidth of the EVFE technique canbe much smaller compared to that of its time-domainorigin, the FETD method, which results in a much lowertime-dispersion error, as shown in the numerical test [2].This also implies that much larger time intervals can be usedin the EVFE method than the FETD method. In fact, thetime intervals used in the EVFE technique are no longergoverned by the Nyquist sampling rate of the original RF
E-mail: [email protected]
The authors are with the Department of Electrical Engineering, University ofCalifornia, Los Angeles, 405 Hilgard Ave., Los Angeles, CA 90095, USA
r The Institution of Engineering and Technology 2006
IEE Proceedings online no. 20050155
doi:10.1049/ip-map:20050155
Paper first received 1st July 2005 and in revised form 7th April 2006
IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 6, December 2006
signal but that of the signal envelope. This method has beenproven to be stable through numerous numerical tests andthrough theoretical proof [1–5]. In contrast, the recentlyproposed envelope domain FDTD method [6] still requirestime intervals less than half of the carrier period in order toremain stable. It can be asserted that the EVFE is apowerful tool to simulate the transient response ofcomponents and devices in the narrowband system.The concept of the EVFE technique also makes itpossible to perform the electromagnetic (EM) andcircuit co-simulations combined with a circuit envelopesimulator [7].
EVFE techniques have been applied to various guidedwave problems [3, 4] with the first-order absorbingboundary conditions (ABC). However, it is well knownthat the better choice to terminate the computationaldomain is the perfectly matched layer (PML) boundarycondition, which has wider bandwidth and can providemore absorption of the incident waves. A perfectly matchedlayer was first introduced into the finite-difference time-domain (FDTD) method by Berenger [8]. Sacks etc. [9]suggested a new PML based on a lossy uniaxial mediumand successfully implemented it into the frequency-domainfinite-element method. Gedney [10] further developed theformulation for the FDTD method with an anisotropicperfectly matched layer and applied it to the analysis ofmicrowave circuits and antennas. Recently, a PML hasbeen successfully implemented with the FETD simulator inthe analysis of scattering problems [11] and active nonlinearmicrowave circuit modelling [12]. Here, based on theanisotropic PML concept, the 3-D PML formulation forthe EVFE technique is derived. Several numerical tests andexamples validate the good performance of the proposedPML scheme. With this high performance boundarycondition, a full 3-D EVFE solver is developed for theanalysis of microwave integrated circuits such as MMICinterconnects. Numerical test results demonstrate that theproposed technique promises both high efficiency andaccuracy for various interconnect structures, especially forthose with high-Q resonances in their transient responses.
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2 EVFE-PML formulation
In this Section, the EVFE-PML formulation is derived.Without losing generality, the 3-D PML formulationis presented, which can be easily reduced to a 2-Dformulation by setting the operator of the third axis tozero. The time-harmonic Maxwell’s equations in the PMLregions are:
r�H ¼ joe��eE þ J i
r� E ¼ �jom��mHð1Þ
Note that the permittivity and permeability of the PML areanisotropic tensors given by,
��e ¼ ��l ¼
sysz
sx0 0
0sxsz
sy0
0 0sxsy
sz
266664
377775 ð2Þ
where
si ¼ 1þ si
joe0i ¼ x; y; z ð3Þ
Assuming that there is no source excitation in the PMLregion, the vector wave equation can be derived from (1),(2) and (3) as,
r� ðm�1 ��m½ ��1 � r� EÞ � o2e ��e½ �E ¼ �joJ ð4ÞMultiplying the vector testing function T on both sides of(4) leads to the weak form integral over each cell of the finiteelement mesh:Z
V
1
m ��m½ � � r� E
� �� r� Tð ÞdV �
ZS
T� 1
m ��m½ � r�E
� �dS
�Z
VT � o2e ��e½ �EdV ¼ �jo
ZV
T � J i dV ð5Þ
The vector testing function T is chosen to be the sub-domain finite-element basis function defined for eachelement. Merging the weak-form integrals for each cellleads to the volume integral over the complete computa-tional domain, whereas the surface integral terms reduce toan integral over the outer boundary of the computationaldomain only. This is because of the continuity of thetangential electric fields on the inter-element boundaries.The boundary integral vanishes when the computationaldomain is enclosed by the conductor-backed PML. Withedge element vector bases, the electric field vector withineach cell can be expanded in terms of its values on the edges,which is
E ¼XN
j¼1N jej ¼
XN
j¼1ejðNj
x ;Njy ;N
jzÞ ð6Þ
The testing vector T can also be expressed in its componentform, consisting of the same set of bases:
T ¼ ðN ix;N
iy ;N
izÞ ð7Þ
Substituting (6) and (7) into (5) yields:
� o2ejQxsysz
sxþ ejPx
sx
sysz� o2ejQy
sxsz
syþ ejPy
sy
sxsz
� o2ejQzsysx
szþ ejPz
sz
sxsy¼ �jo
Zv
N i � J i dv ð8Þ
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where
Qx ¼Z
veNj
xN ix dv Qy ¼
ZveN j
yN iy dv
Qz ¼Z
veNj
z N iz dv Px ¼
Zv
1
mðr�N jÞxðr�N jÞx dv
Py ¼Z
v
1
mðr�N jÞyðr�N jÞy dv
Pz ¼Z
v
1
mðr�N jÞzðr�N jÞz dv ð9Þ
To solve (8), three auxiliary variables need to be furtherdefined, which are:
Fx ¼sx
syszei;Fy ¼
sy
sxszei;Fz ¼
sz
sxsyei ð10Þ
Thus, (8) is reduced to:
�o2FzQxs2y þ PxFx � o2FxQys2z þ PyFy
� o2FyQzs2x þ PzFz ¼ �joZ
vN i � J i dv ð11Þ
Note that both (8) and (11) are frequency-domain formulasand they will be transformed into the envelope domain todescribe the time variation of the signal envelope. Thecomplex signal envelopes for the above quoted variables aredefined as:
ejðtÞ ¼ ujðtÞejoct
FjðtÞ ¼ cjðtÞejoct
JiðtÞ ¼ jiðtÞejoct
ð12Þ
where oc is the carrier frequency. To generate the fieldequations in the envelope domain, the above frequency-domain formulas can be first transformed into the time-domain through Fourier transform, then further convertedto the envelope domain through (12). An alternative is todirectly apply the following frequency domain to theenvelope-domain transform,
jo$ @
@tþ joc � o2 $ @2
@t2þ 2joc
@
@t� o2
c ð13Þ
Substituting (3) into (11) and applying (13), the weak-formwave equation in the envelope domain becomes:
Qxd2cz
dt2þ S1½ �
dcz
dtþ S2½ �cz þ Qy
d2cx
dt2þ S3½ �
dcx
dtþ S4½ �cx
þ Qzd2cy
dt2þ S5½ �
dcy
dtþ S6½ �cy ¼ �
@fi
@tþ jocfi
� �
ð14Þwhere
S1 ¼ 2 joc þsy
e0
� �Qx S2 ¼ joc þ
sy
e0
� �2
Qx þ Pz
S3 ¼ 2 joc þsz
e0
� �Qy S4 ¼ joc þ
sz
e0
� �2
Qy þ Px
S5 ¼ 2 joc þsx
e0
� �Qz S6 ¼ joc þ
sx
e0
� �2
Qz þ Py
fi ¼Z
vN i � J i dv
ð15Þ
To solve (14) by computer, the Newmark-beta formulation[3] is used to discretise the differential equation in the time
IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 6, December 2006
domain, which yields:
R1cnþ1z þ R2c
nz þ R3c
n�1z þ R4c
nþ1x
þ R5cnx þ R6c
n�1x þ R7c
nþ1y þ R8c
ny þ R9c
n�1y
¼ � f nþ1i � f n�1
i
2Dtþ joc
f nþ1i þ 2f n
i þ f n�1i
4
� �ð16Þ
where
R1 ¼Qx
Dt2þ S1
2Dtþ S2
4
� �
R2 ¼ �2 Qx
Dt2þ S2
2
� �
R3 ¼Qx
Dt2� S1
2Dtþ S2
4
� �
R4 ¼Qy
Dt2þ S3
2Dtþ S4
4
� �
R5 ¼ �2 Qy
Dt2þ S4
2
� �
R6 ¼Qy
Dt2� S3
2Dtþ S4
4
� �
R7 ¼Qz
Dt2þ S5
2Dtþ S6
4
� �
R8 ¼ �2 Qz
Dt2þ S6
2
� �
R9 ¼Qz
Dt2� S5
2Dtþ S6
4
� �
ð17Þ
and n is the time-step number.Similarly, (10) has to undergo the same frequency to
envelope transform given by (13), which leads to
cnþ1x ¼ ax5c
nx þ ax6c
n�1x þ ax7unþ1 þ ax8un þ ax9un�1
ð18Þ
The coefficients are defined as:
ax1 ¼ 2joc þsx�1 þ sx�2
e0
ax2 ¼sx�1sx�2
e20þ joc
sx�1 þ sx�2e0
� o2c
ax3 ¼ 2joc þsxe0
ax4 ¼� o2c þ
sxe0
joc
ax5 ¼2
Dt2� ax2
21
Dt2þ ax1
2Dtþ ax2
4
ax6 ¼�1
Dt2� ax1
2Dtþ ax2
41
Dt2þ ax1
2Dtþ ax2
4
IEE Proc.-Microw. Antennas Propag., Vol. 153, No. 6, December 2006
ax7 ¼1
Dt2þ ax3
2Dtþ ax4
41
Dt2þ ax1
2Dtþ ax2
4
ax8 ¼� 2
Dt2þ ax4
21
Dt2þ ax1
2Dtþ ax2
4
ax9 ¼1
Dt2� ax3
2Dtþ ax4
41
Dt2þ ax1
2Dtþ ax2
4
ð19Þ
To solve the time-dependent complex signal envelopes, oneneeds to associate (16) with (18). A simple way to solvethem jointly is to substitute (18) into (16), which yields atime-marching form of the field variables:
az7R1 þ ax7R4 þ ay7R7
� �unþ1
j þ az8R1 þ ax8R4 þ ay8R7
� �un
j
þ az9R1 þ ax9R4 þ ay9R7
� �un�1
j þ ax5R4 þ R5ð Þcnx
þ ax6R4 þ R6ð Þcn�1x þ ay5R7 þ R8
� �cn
y
þ ay6R7þR9
� �cn�1
y þ az5R1þR2ð Þcnzþ az6R1 þ R3ð Þcn�1
z
¼ � f nþ1i � f n�1
i
2Dtþ joc
f nþ1i þ 2f n
i þ f n�1i
4
� �ð20Þ
The time iteration can then start with (20), relying on (18) tosupply all the known variables for the next time step. Theinitial conditions to start the time iterations are:
u0j ; u�1j ;c0
j ;c�1j ¼ 0 ð21Þ
The time stepping is carried out as follows:
Step 0: Solve for the inverse of the matrix coefficient of unþ1j
in (20) using sparse matrix techniques. This only needs to bedone once.
Step 1: Use (20) to calculate the envelope vector U n+1 withthe signal envelope vectors U n, U n� 1 and wn, wn� 1 inprevious time steps.
Step 2: Use (18) to calculate the envelope vector wn+1 withthe signal envelope vectors U n+1 U n, U n� 1 and wn, wn� 1.
Step 3: n¼ n+1, and go back to step 1.
With the above iterative scheme and the sparse matrixtechniques, the complex signal envelope vectors for eachtime step u¼ [u1,u2,y,uN] and W¼ [C1,C2,y,CN] canthus be solved.
The computational efficiency of the EVFE technique issuperior to that of the conventional FETD method,especially when only a small fraction of the bandwidth isinterested. If the fraction of the bandwidth is defined asBW¼ ( fhigh� flow)/fc, where fhigh, flow are, respectively, thehighest and lowest frequencies in the band and fc is thecentre frequency. The total number of time steps requiredshould be less than in the conventional FETD method by afactor of BW/2, which results in the same proportion ofcomputational time saving if an iterative solver is used toinverse the finite-element matrix. Moreover, the dispersionerror caused by the time discretisation is also significantlylower than that in the FETD method in the interestedfrequency band [13]. The overall computational efficiency ofthe EVFE technique can not be directly compared to theFDTD method, because it differs in terms of the
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implementation of the matrix solver and the meshingscheme. However, the number of time steps needed for theEVFE technique is usually far less than in the FDTDmethod, since there is no stability condition which limits themaximum number of time-sampling intervals. The EVFEtechnique also offers the standard advantages of finite-element methods over the FDTD method in terms of itsflexible meshing schemes, which can well represent the finedetails of the physical structure.
3 PML stability and performance test
The reflection of a non-perfect PMLmainly comes from thespatial discretisation error. To minimise this error, aspatially variant conductivity along the normal axis of thewave absorption should be chosen [10]:
szðzÞ ¼smax z� z0j jmffiffiffiffi
erp
dm ð22Þ
where z0 is the interface between the PML region and thenon-PML region, d is the depth of the PML and m is theorder of the polynomial variation. Order m¼ 2 is chosen forthe numerical test here.
Two numerical experiments are performed to validate theEVFE-PML formulation and to examine its absorptionperformance. The first numerical example is a 3-D emptyrectangular waveguide terminated with a PML absorber, asshown in Fig. 1. The cross-section of the waveguide is10.16mm (x direction) by 22.86mm (y direction). Theminimum mesh sizes in the x, y directions are, respectively,Dxmin¼ 1.693mm and Dymin¼ 1.95mm. The mesh size inthe z direction, which is the propagation direction, isuniform with Dz¼ 2mm. The second example, see Fig. 2, isa shielded microstrip line printed on a substrate with adielectric constant of 9.8 and thickness of 7.4mil. Theindividual cell dimensions are Dxmin¼ 7.4mil, Dymin¼1.85mil and Dz¼ 10mil, respectively [1mil¼ 0.001 inch�0.0254mm].
Figure 3 shows the PML absorption performance againstdifferent PML depths for the rectangular waveguide. Theexcitation’s carrier frequency is about 10GHz and thebandwidth is about 4GHz. The time step is Dt¼ 5ps andthe parameter smax changes according to different PMLdepths. The excitation plane is set at the planar metalcontacts (PMC) boundary at z¼ 0, whereas the observationpoint is set at z¼ 10mm. The result shows that only fourlayers of PML can provide about 40dB absorption whenthe smax is carefully set. Figure 4 shows the PMLperformance against different smax for the second example,i.e. the shielded microstrip line. Again, the excitation planeis set at the PMC boundary underneath the strip line atz¼ 0 and the observation point is set at z¼ 100mil. In this
Fig. 1 Empty waveguide with PML, a¼ 10.16 mm, b¼ 22.86 mmand c¼ 300 mm
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case, the PML depth is fixed to 200mil but different smax
values are used. It shows that an optimal value of smax
exists, which can maximise the PML absorption. In general,the optimal value of smax can be estimated through thefollowing formula [10]:
smax �ðmþ 1Þ150pDz
ð23Þ
where m is the order of variation in s in (22). The thicknessof the PML should be at least two times the skin depth ofthe PML at the lowest frequency for sufficient absorption.
Fig. 2 Shielded microstrip line with PML, a¼ 74 mil, h¼ 7.4 mil,b¼ 100 mil and c¼ 500 mil (er¼ 9.8)1mil¼ 0.001 inch� 0.0254mm
Fig. 3 PML absorption the rectangular waveguide for differentnumbers of layers of PML
Fig. 4 PML absorption versus different smax values for theshielded microstrip line
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Fig. 5 Normalised time-domain waveforms at z¼ 10 mm with different time steps Dt¼ 5Dt0, 20Dt0, 50Dt0, 100Dt0 for the waveguide example
A good approximation of the minimum thickness d is givenas follows:
d ¼ 1
pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffif � 10�7 � smax
p ð24Þ
Figure 5 shows the stability of the EVFE algorithm with thePML boundary condition. For the above waveguideexample, the maximum time step satisfying the CFLcriterion is Dt0¼ 3.85ps, which serves as a reference. Fourdifferent time-step sizes: Dt¼ 5Dt0, 20Dt0, 50Dt0, 100Dt0 arethen separately used to run the EVFE simulation. Thewaveforms at the z¼ 10mm are plotted in Fig. 5. It showsthat the algorithm remains stable as the time-step sizeincreases. However, the time dispersion increases as well.
4 Anaylisis of microwave integrated circuits
Passive structures in microwave integrated circuits, such asMMIC interconnects and other on-chip parasitic compo-nents, require accurate electromagnetic modelling. Some ofthe components, such as high-Q chip inductors, may exhibitstrong frequency dependency at their resonant frequency. Itmay take a long time to precisely predict the frequency-domain response of such structures when a conventionaltime-domain simulator is used. For example, a microstriplow-pass filter, with a dielectric constant of 2.2 is analysedand the physical structure is shown in Fig. 6. In thisexample, four layers of the PML are set in each direction,except on the ground plane. The minimum mesh sizesin each direction are: Dxmin¼ 31mil, Dymin¼ 23.75mil andDzmin¼ 25mil. The excitation is a Gaussian pulse modulat-ing on a carrier frequency of 5GHz, with a total bandwidthof 8GHz The time step used in the simulation is 10ps,which is about 6 times that required by the Courant–Friedrichs–Lewy (CFL) stability criterion. Figure 7 showsthe time-domain waveforms of the electric field and Fig. 8shows the magnitudes of the S parameters. The resultscorrespond well with those calculated using the FDTDmethod. In fact, if the interested frequency band is just inthe vicinity of the resonant frequency, more computationsaving can be achieved by just cutting down the excitationbandwidth and increasing the time step accordingly.
The second example is a vertical metallic via hole in thedielectric substrate, which is widely used in modern MMIClayouts. It provides a short circuit to the different layers of
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the MMIC or a feeding point for the RF excitation signals.Figure 9 shows a chip-level grounded via in a microstrip lineprinted on a GaAs substrate (er¼ 12.9). The sizes of thisstructure are: h1¼ 250mm, h2¼ 600mm, w2¼ 600mm,w3¼ 1785mm. Here we assume that the via has a squarecross-section with an edge length of 85mm. The two sidesand the bottom and top surfaces are perfect electric
Fig. 6 Geometry of a microstrip low-pass filter1mil¼ 0.001 inch� 0.0254mm
Fig. 7 Time-domain envelopes of the electric field
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conductor (PEC) walls. The front and end are truncated byPML absorbers. In this example, we want to show theEVFE-PML technique’s capability of predicating broad-band performance ( from 0 to 30GHz); thus we set thecarrier frequency as 15GHz with the excitation’s bandwidthas 15GHz. The time step is 2ps, which is about 4 timessparser than that required by the regular FETD. The PMLdepth is about 5000mm. The magnitudes of S11 and S21 areplotted in Fig. 10, and the results have good agreement withYook’s in [14].
Fig. 8 Magnitudes of S parameters
Fig. 9 Geometry of a microstrip grounded via
Fig. 10 Magnitude of S11 and S21
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The third example is two microstrip lines joined by an airor dielectric bridge, as depicted in Fig. 11. The microstripline has a width a and a thickness 0.2a, which is againprinted on the GaAs substrate (er1¼ 12.9). The bridge has alength 12.7a with the dielectric constant er2. Like theprevious example, the structure is enclosed by PEC walls,except the front and end which are terminated by PMLabsorbers. In EVFE formulations, we set the centrefrequency to k0a¼ 0.24 and the bandwidth to twice thecentre frequency, where k0 is the wave number in free space.The PML depth is about 4a. The magnitude of thesimulated S11 is shown in Fig. 12 against different values ofer2. The results are also compared to those of the frequency-domain finite-difference method [15] in Fig. 12. A goodcoincidence between the two sets of results can be observed.
5 Conclusion
In this paper, an anisotropic PML formulation has beendeveloped and implemented into a 3-D EVFE solver.Numerical examples of an empty rectangle waveguide and ashielded microstrip line have been presented to validate thePML’s performance; more than 40dB absorption has beenachieved when a 4-layer absorber is set. The performance ofthe EVFE-PML technique is validated through thesimulation of three microwave integrated circuit structures.It is expected that the EVFE-PML solver can be easilyextended for modelling of other types of 3-D electromag-netic problems.
1rε0.2a
a
2a
d
1rε
5a
a
2rε
Fig. 11 Geometry of an air or dielectric bridge in MMICs
Fig. 12 Magnitude of simulated S11
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