trf3702 datasheet pdf - texas instruments · • lmds, mmds • wideband transceivers ... p1db...

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FEATURES

APPLICATIONS

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2

3

4

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GNDGNDVCC

GNDGND

LO

GN

DQ

RE

FIR

EF

RF

OU

TG

ND

IVIN

QV

IN

GN

DV

CC

PW

D

RHC PACKAGE(TOP VIEW)

P0003-01

DESCRIPTION

TRF3702

SLWS149A–SEPTEMBER 2004–REVISED AUGUST 2006

1.5-GHz to 2.5-GHz QUADRATURE MODULATOR

• 71-dBc Single-Carrier WCDMA ACPR at–14-dBm Channel Power

• P1dB of 7 dBm• Typical Unadjusted Carrier Suppression

35 dBc at 2 GHz• Typical Unadjusted Sideband Suppression

35 dBc at 2 GHz• Very Low Noise Floor• Differential or Single-Ended I, Q Inputs• Convenient Single-Ended LO Input• Silicon Germanium Technology

• Cellular Base Transceiver Station TransmitChannel

• IF Sampling Applications• TDMA: GSM, IS-136, EDGE/UWC-136• CDMA: IS-95, UMTS, CDMA2000• Wireless Local Loop• Wireless LAN IEEE 802.11• LMDS, MMDS• Wideband Transceivers

The TRF3702 is an ultralow-noise direct quadrature modulator that is capable of converting complex inputsignals from baseband or IF directly up to RF. An internal analog combiner sums the real and imaginarycomponents of the RF outputs. This combined output can feed the RF preamp at frequencies of up to 2.5 GHz.The modulator is implemented as a double-balanced mixer. An internal local oscillator (LO) phase splitteraccommodates a single-ended LO input, eliminating the need for a costly external balun.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Copyright © 2004–2006, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.

http://focus.ti.com/docs/prod/folders/print/trf3702.html

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+45°

–45°Σ RFOUT

IVIN

IREF

QVIN

QREF

LO

50 Ω

VCC

PWD GND

B0002-01

TRF3702


This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled withappropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may bemore susceptible to damage because very small parametric changes could cause the device not to meet its publishedspecifications.

AVAILABLE OPTIONS

TA 4-mm × 4-mm 16-Pin RHC (QFN) Package (1)

TRF3702IRHC–40°C to 85°C

TRF3702IRHCR (Tape and reel)

(1) For the most current package and ordering information, see thePackage Option Addendum at the end of this document, or see theTI website at www.ti.com.

FUNCTIONAL BLOCK DIAGRAM

2 Submit Documentation Feedback


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http://www.go-dsp.com/forms/techdoc/doc_feedback.htm?litnum=SLWS149A&partnum=TRF3702

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1 16 15 14 13

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GNDGNDVCC

GNDGND

LO

GN

DQ

RE

FIR

EF

RF

OU

TG

ND

IVIN

QV

IN

GN

DV

CC

PW

D

RHC PACKAGE(TOP VIEW)

P0003-01

ABSOLUTE MAXIMUM RATINGS

TRF3702


TERMINAL FUNCTIONS

TERMINALI/O DESCRIPTION

NAME NO.

GND 1, 2, 3, 5, 9, 11, 12 Ground

IREF 15 I In-phase (I) reference voltage/differential input

IVIN 14 I In-phase (I) signal input

LO 4 I Local oscillator input

PWD 7 I Power down

QREF 16 I Quadrature (Q) reference voltage/differential input

QVIN 13 I Quadrature (Q) signal input

RFOUT 8 O RF output

VCC 6, 10 Supply voltage

over operating free-air temperature range (unless otherwise noted) (1) (2)

VCC Supply voltage range –0.5 V to 6 V

LO input power level 10 dBm

Baseband input voltage level (single-ended) 3 Vp-p

TA Operating free-air temperature range –40°C to 85°C

Lead temperature for 10 seconds 260°C

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operatingconditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Measured with respect to ground

3Submit Documentation Feedback



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RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

TRF3702


MIN NOM MAX UNIT

Supplies and References

VCC Analog supply voltage 4.5 5 5.5 V

VCM (IVIN, QVIN, IREF, QREF input common-mode voltage) 3.7 V

Local Oscillator (LO) Input

Input frequency 1500 2500 MHz

Power level (measured into 50 Ω) –6 0 6 dBm

Signal Inputs (IVIN, QVIN)

Input bandwidth 700 MHz

Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2140 MHz at 0 dBm, TA = 25°C (unless otherwisenoted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Power Supply

V(PWD) = 5 V 145 170ICC Total supply current mA

V(PWD) = 0 V 13 30

Turnon time 120 ns

Turnoff time 20 ns

Power-down input impedance 11 kΩ

Local Oscillator (LO) Input

Input impedance (1) 27 + j8 Ω

Signal Inputs (IVIN, QVIN, IREF, QREF)

Input bias current I, Q = VCM = 3.7 V (all inputs tied to VCM) 16 µA

Single-ended input 260Input impedance kΩ

Differential input 130

(1) For a listing of impedances at various frequencies, see Table 1.

Table 1. RFOUT and LO Pin Impedance

Frequency (MHz) Z (RFOUT Pin) Z (LO Pin)

1500 31 – j 4.7 31.7 – j 8.8

1600 30.9 – j 0.3 29.3 – j 6.2

1700 29.3 + j 3.1 27.3 - j 3.1

1800 27.9 + j 7.2 26.5 – j 0.17

1900 27.6 + j 13 26.1+ – j 2.7

2000 29.4 +j 19.8 26.5 + j 5.4

2100 34.6 + j 27.2 27 + j 7.6

2200 44.2 + j 33 28 + j 9.5

2300 60 + j 33.6 29 + j 10.6

2400 78 + j 21 29.5 + j 11

2500 82 – j 5.8 29.8 + j 12.2




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RF OUTPUT PERFORMANCE


TRF3702


Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1842 MHz at 0 dBm (unless otherwise specified)


Single and Two-Tone Specifications

Output power –5 –2.5 dBm

Second baseband harmonic –50 –42 dBc(USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz

Third baseband harmonic –57 –50 dBc(USB or LSB) (2)

I, Q (1) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz,IMD3 –59 –53 dBcfBB2 = 992 kHz)

P1dB (output compression 7 dBmpoint)

I, Q = VCM = 3.7 VDC (all inputs tied to VCM), 6-MHz offset –155from carrierNSD Noise spectral density dBm/Hz6-MHz offset from carrier, Pout = 0 dBm, over temperature –148.5 –146.5 (3)

RFOUT pin impedance (4) 28 + j8 Ω

I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 30

Carrier suppression I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 dBc

I, Q (1) = 1 Vp-p, fBB = 928 kHz, over temperature (5) 44


Sideband suppression I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 dBc


(1) I , Q = 1 Vp-p implies that the magnitude of the signal at each input pin IVIN, IREF, QVIN, QREF is equal to 500 mVp-p.(2) USB = upper sideband. LSB = lower sideband.(3) Maximum noise values are assured by statistical characterization only, not production testing. The values specified are over the entire

temperature range, TA = –40°C to 85°C.(4) For a listing of impedances at various frequencies, see Table 1.(5) After optimization at room temperature. See the Definitions of Selected Specifications section.

Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 1960 MHz at 0 dBm (unless otherwise specified)



Output power –3 dBm

Second baseband harmonic –50 dBc(USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz

Third baseband harmonic –60 dBc(USB or LSB) (2)

I, Q (1) = 1 Vp-p (two-tone signal, fBB1 = 928 kHz,IMD3 –59 –53 dBcfBB2 = 992 kHz)


NSD Noise spectral density 6-MHz offset from carrier, Pout = 0 dBm, over temperature –148 –146.5 (3) dBm/Hz


I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 33Carrier suppression dBc

I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55

I, Q (1) = 1 Vp-p, fBB = 928 kHz, unadjusted 35Sideband suppression dBc

I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55


temperature range, TA = –40°C to 85°C.(4) For a listing of impedances at various frequencies, see Table 1.




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THERMAL CHARACTERISTICS

DEFINITIONS OF SELECTED SPECIFICATIONS

Unadjusted Carrier Suppression

Adjusted (Optimized) Carrier Suppression

TRF3702


Over recommended operating conditions, VCC = 5 V, VCM = 3.7 V, fLO = 2.1 GHz at 0 dBm (unless otherwise specified)



Output power –5 –3 dBm

Second baseband harmonic –50 –42 dBc(USB or LSB) (2) I, Q (1) = 1 Vp-p, fBB = 928 kHz

Third baseband harmonic –60 –51 dBc(USB or LSB) (2)

I, Q (1) = 1 Vp-p, fBB = 928 kHz (two-tone signal,IMD3 –55 –47 dBcfBB1 = 928 kHz, fBB2 = 992 kHz)


NSD Noise spectral density 60-MHz offset from carrier, Pout = 0 dBm, over temperature –151 –148.5 (3) dBm/Hz

WCDMA ACPR Single carrier, channel power = –14 dBm 71 dBc



Carrier suppression I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 dBc



Sideband suppression I, Q (1) = 1 Vp-p, fBB = 928 kHz, optimized 55 dBc



temperature range, TA = –40°C to 85°C.(4) For a listing of impedances at various frequencies, see Table 1.(5) After optimization at room temperature. See the Definitions of Selected Specifications section.

PARAMETER CONDITION NOM UNIT

RθJA Thermal resistace, junction to ambient Soldered pad using four-layer JEDEC board with four thermal vias 42.8 °C/W

RθJM Thermal resistace, junction to mounting 24.8 °C/Wsurface

RθJC Thermal resistace, junction to case Soldered pad using two-layer JEDEC board with four thermal vias 67.6 °C/W

This specification measures the amount by which the local oscillator component is attenuated in the outputspectrum of the modulator relative to the carrier. It is assumed that the baseband inputs delivered to the pins ofthe TRF3702 are perfectly matched to have the same dc offset (VCM). This includes all four baseband inputs:IVIN, QVIN, IREF and QREF. Unadjusted carrier suppression is measured in dBc.

This differs from the unadjusted suppression number in that the dc offsets of the baseband inputs are iterativelyadjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in theoutput spectrum. Adjusted carrier suppression is measured in dBc.




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Unadjusted Sideband Suppression

Adjusted (Optimized) Sideband Suppression

Suppressions Over Temperature

f − Frequency Offset − kHz (Relative to Carrier)

−80

−70

−60

−50

−40

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−20

−10

0

10

−200 −150 −100 −50 0 50 100 150 200

P −

Pow

er −

dB

m

G007

3RD LSB(dBc)

3RD LSB

2ND LSB

LSB(Undesired)

POUT

SBS(dBc)

Carrier

USB(Desired)

2ND USB(dBc)

2ND USB

3RD USB

CS(dBc)

TYPICAL CHARACTERISTICS

TRF3702


DEFINITIONS OF SELECTED SPECIFICATIONS (continued)

This specification measures the amount by which the unwanted sideband of the input signal is attenuated in theoutput of the modulator, relative to the wanted sideband. It is assumed that the baseband inputs delivered to themodulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. Unadjusted sidebandsuppression is measured in dBc.

This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjustedaround their theoretical values to maximize the amount of sideband suppression. Adjusted sidebandsuppression is measured in dBc.

This specification assumes that the user has gone through the optimization process for the suppression inquestion, and set the optimal settings for the I, Q inputs at TA = 25°C. This specification then measures thesuppression when temperature conditions change after the initial calibration is done.

Figure 1 shows a simulated output and illustrates the respective definitions of various terms used in this datasheet. The graph assumes a baseband input of 50 kHz.

Figure 1. Graphical Illustration of Common Terms

For all the performance plots in this section, the following conditions were used, unless otherwise noted:VCC = 5 V, VCM = 3.7 V, PLO = 0 dBm, I and Q inputs driven differentially at a frequency of 50 kHz. In the caseof optimized suppressions, the point of optimization is noted and is always at nominal conditions and roomtemperature. A level of >50 dBc is assumed to be optimized.




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I, Q Amplitude − V PP

−25

−20

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−5

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0 1 2 3 4

PO

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G001

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85°C

25°C

fLO = 1842 MHz

−25

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85°C25°C

fLO = 1960 MHz


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G003

–40°C

85°C25°C

fLO = 2.1 GHz

I, Q Amplitude − V PP fLO − Frequency − MHz

0

5

10

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45

1400 1600 1800 2000 2200 2400 2600

CS

− U

nadj

uste

d C

arrie

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pres

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Bc

G020

25°C

85°C –40°C

TRF3702


TYPICAL CHARACTERISTICS (continued)

OUTPUT POWER OUTPUT POWERvs vs

I, Q AMPLITUDE I, Q AMPLITUDE

Figure 2. Figure 3.

OUTPUT POWER UNADJUSTED CARRIER SUPPRESSIONvs vs

I, Q AMPLITUDE FREQUENCY

Figure 4. Figure 5.




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fLO − Frequency − MHz

0

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65

1400 1600 1800 2000 2200 2400 2600

SS

− U

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and

Sup

pres

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− d

Bc

G021

–40°C

85°C

25°C

POUT − Output Power − dBm

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5

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30

35

40

45

50

−25 −20 −15 −10 −5 0 5 10

fLO = 1960 MHz

CS

− U

nadj

uste

d C

arrie

r Sup

pres

sion

− d

Bc

G008

–40°C

25°C

85°C


0

10

20

30

40

50

−25 −20 −15 −10 −5 0 5 10

fLO = 1960 MHz

SS

− U

nadj

uste

d S

ideb

and

Sup

pres

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− d

Bc

G011

–40°C

25°C

85°C

0

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1880 1900 1920 1940 1960 1980 2000 2020


POUT = 0 dBmOptimized at 1960 MHz

CS

− C

arrie

r Sup

pres

sion

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Bc

G025

25°C

OptimizationPoint

–40°C85°C

TRF3702



UNADJUSTED SIDEBAND SUPPRESSION UNADJUSTED CARRIER SUPPRESSIONvs vs

FREQUENCY OUTPUT POWER

Figure 6. Figure 7.

UNADJUSTED SIDEBAND SUPPRESSION CARRIER SUPPRESSIONvs vs

OUTPUT POWER FREQUENCY

Figure 8. Figure 9.




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0

10

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30

40

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60

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80

4.4 4.6 4.8 5.0 5.2 5.4 5.6

25°C

VCC − Supply V oltage − V

POUT = 0 dBmfLO = 1960 MHzOptimized at 5 V

CS

− C

arrie

r Sup

pres

sion

− d

Bc

G034

–40°C

OptimizationPoint

85°C

0

10

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50

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90

3.0 3.5 4.0 4.5

VCM − V

POUT = 0 dBmfLO = 1960 MHzOptimized at 3.7 V

CS

− C

arrie

r Sup

pres

sion

− d

Bc

G028

25°C–40°C

85°C

OptimizationPoint

0

10

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POUT = 0 dBmfLO = 1960 MHzOptimized at 0 dBm

CS

− C

arrie

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pres

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Bc

G039

25°C

–40°C

OptimizationPoint

PLO − Local Oscillator Input Power − dBm

85°C

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1880 1900 1920 1940 1960 1980 2000 2020

–40°C


POUT = 0 dBmOptimized at 1960 MHz

SS

− S

ideb

and

Sup

pres

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Bc

G026

25°C85°C

OptimizationPoint

TRF3702



CARRIER SUPPRESSION CARRIER SUPPRESSIONvs vs

VCM SUPPLY VOLTAGE

Figure 10. Figure 11.

CARRIER SUPPRESSION SIDEBAND SUPPRESSIONvs vs

LOCAL OSCILLATOR INPUT POWER FREQUENCY





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POUT = 0 dBmfLO = 1960 MHzOptimized at 5 V

SS

− S

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Sup

pres

sion

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Bc

G035

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85°C

OptimizationPoint

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VCM − V

POUT = 0 dBmfLO = 1960 MHzOptimized at 3.7 V

SS

− S

ideb

and

Sup

pres

sion

− d

Bc

G029

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85°C

OptimizationPoint

25°C

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−12 −9 −6 −3 0 3 6 9 12

POUT = 0 dBmfLO = 1960 MHzOptimized at 0 dBm

SS

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Sup

pres

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Bc

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25°C


OptimizationPoint

–40°C


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G017

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 1842 MHz

TRF3702



SIDEBAND SUPPRESSION SIDEBAND SUPPRESSIONvs vs

VCM SUPPLY VOLTAGE


SIDEBAND SUPPRESSION CARRIER SUPPRESSIONvs vs






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CS

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OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 3.7 V

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G044

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 5 V

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POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 0 dBm

CS

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pres

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Bc

G018

OptimizationPoint


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G045

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 1842 MHz

OptimizationPoint

TRF3702




VCM SUPPLY VOLTAGE








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0

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VCM − V

SS

− S

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OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 3.7 V

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G051

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 5 V

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G049PLO − Local Oscillator Input Power − dBm

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 1842 MHzOptimized at 0 dBm


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G054

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 2.1 GHz

TRF3702




VCM SUPPLY VOLTAGE


SIDEBAND SUPPRESSION CARRIER SUPPRESSIONvs vs






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0

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3.0 3.5 4.0 4.5

VCM − V

CS

− C

arrie

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G056

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 3.7 V

OptimizationPoint

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4.4 4.6 4.8 5.0 5.2 5.4 5.6


CS

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G057

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 5 V

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POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 0 dBm

CS

− C

arrie

r Sup

pres

sion

− d

Bc

G055

OptimizationPoint

PLO − Local Oscillator Input Power − dBm fLO − Frequency − MHz

40

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2040 2060 2080 2100 2120 2140 2160 2180

SS

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− d

Bc

G058

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 1842 MHz

TRF3702




VCM SUPPLY VOLTAGE








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0

10

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50

60

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90

3.0 3.5 4.0 4.5

VCM − V

SS

− S

ideb

and

Sup

pres

sion

− d

Bc

G060

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 3.7 V

0

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80

4.4 4.6 4.8 5.0 5.2 5.4 5.6


SS

− S

ideb

and

Sup

pres

sion

− d

Bc

G061

OptimizationPoint

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 5 V

0

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−12 −9 −6 −3 0 3 6 9 12

POUT = 0 dBmTA = 25°CfLO = 2.1 GHzOptimized at 0 dBm

SS

− S

ideb

and

Sup

pres

sion

− d

Bc

G059

OptimizationPoint

PLO − Local Oscillator Input Power − dBm fLO − Frequency − MHz

0

1

2

3

4

5

6

7

8

1400 1600 1800 2000 2200 2400 2600

P1d

B −

dB

m

G019

85°C

–40°C

25°C

TRF3702




VCM SUPPLY VOLTAGE


SIDEBAND SUPPRESSION P1dBvs vs






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−5

−4

−3

−2

−1

0

1

2

3

4

5

1700 1800 1900 2000 2100 2200 2300

PO

UT

− O

utpu

t Pow

er F

latn

ess

− dB

m

G022

–40°C

25°C85°C

VCM − V

−5

−4

−3

−2

−1

0

1

2

3

4

5

3.0 3.5 4.0 4.5 5.0

fLO = 1960 MHz

PO

UT

− O

utpu

t Pow

er F

latn

ess−

dB

m

G027

–40°C25°C

85°C


−5

−4

−3

−2

−1

0

1

2

3

4

5

−12 −9 −6 −3 0 3 6 9 12

fLO = 1960 MHz

PO

UT

− O

utpu

t Pow

er F

latn

ess

− dB

m

G038

–40°C25°C

85°C


−5

−4

−3

−2

−1

0

1

2

3

4

5

4.4 4.6 4.8 5.0 5.2 5.4 5.6

fLO = 1842 MHz

PO

UT

− O

utpu

t Pow

er −

dB

m

G009

25°C

–40°C

85°C

TRF3702



OUTPUT POWER FLATNESS OUTPUT POWER FLATNESSvs vs

FREQUENCY (POUT = 0, –10 dBm NOMINAL) VCM (POUT = 0 dBm NOMINAL)



LO INPUT POWER (POUT = 0 dBm NOMINAL) SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL)





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−5

−4

−3

−2

−1

0

1

2

3

4

5

4.4 4.6 4.8 5.0 5.2 5.4 5.6


fLO = 1960 MHz

PO

UT

− O

utpu

t Pow

er −

dB

m

G033

85°C

–40°C25°C

−5

−4

−3

−2

−1

0

1

2

3

4

5

4.4 4.6 4.8 5.0 5.2 5.4 5.6


fLO = 2.1 GHz

PO

UT

− O

utpu

t Pow

er −

dB

m

G053

85°C

–40°C25°C


−65

−60

−55

−50

−45

−40

−35

−30

1750 1850 1950 2050 2150 2250

POUT = 0 dBm

2nd U

SB

− d

Bc

G023

–40°C

85°C

25°C

POUT − Output Power Per T one − dBm

0

10

20

30

40

50

60

70

−15 −10 −5 0

fLO = 1.8 GHz

IMD

3 −

dBc

G016

85°C

–40°C

25°C

TRF3702




SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL) SUPPLY VOLTAGE (POUT = 0 dBm NOMINAL)


IMD3 2ND USBvs vs

OUTPUT POWER PER TONE FREQUENCY





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−80

−70

−60

−50

−40

−30

0 1 2 3 4

fLO = 1842 MHz

2nd U

SB

− d

Bc

G004

–40°C

85°C

25°C


−80

−70

−60

−50

−40

−30

−20

−10

0

0 1 2 3 4

fLO = 1960 MHz

2nd U

SB

− d

Bc

G005

85°C

25°C


–40°C

−80

−70

−60

−50

−40

−30

0 1 2 3 4

fLO = 2.1 GHz

2nd U

SB

− d

Bc

G006

–40°C

85°C25°C


−65

−60

−55

−50

−45

−40

−35

−30

3.0 3.5 4.0 4.5

VCM − V

POUT = 0 dBmfLO = 1960 MHz

2nd U

SB

− d

Bc

G030

25°C

85°C

–40°C

TRF3702



2ND USB 2ND USBvs vs




I, Q Amplitude VCM





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−70

−65

−60

−55

−50

−45

−40

−35

−30

4.4 4.6 4.8 5.0 5.2 5.4 5.6



2nd U

SB

− d

Bc

G036

25°C

85°C

–40°C

−65

−60

−55

−50

−45

−40

−35

−30

−12 −9 −6 −3 0 3 6 9 12


2nd U

SB

− d

Bc

G052

25°C

–40°C


85°C

−65

−60

−55

−50

−45

−40

−35

−30

−12 −9 −6 −3 0 3 6 9 12

POUT = 0 dBmfLO = 2.1 GHz

2nd U

SB

− d

Bc

G062

25°C

–40°C


85°C

−65

−60

−55

−50

−45

−40

−35

−30

−12 −9 −6 −3 0 3 6 9 12


2nd U

SB

− d

Bc

G041

85°C

25°C

–40°C


TRF3702




SUPPLY VOLTAGE LOCAL OSCILLATOR INPUT POWER



LOCAL OSCILLATOR INPUT POWER LOCAL OSCILLATOR INPUT POWER





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−80

−75

−70

−65

−60

−55

−50

−45

−40

1700 1800 1900 2000 2100 2200

POUT = 0 dBm

3rd L

SB

− d

Bc

G024

25°C

–40°C85°C


−90

−80

−70

−60

−50

−40

−30

−20

0.0 0.5 1.0 1.5 2.0 2.5

fLO = 1842 MHz

3rd L

SB

− d

Bc

G013

–40°C

25°C

85°C


−90

−80

−70

−60

−50

−40

−30

−20

0.0 0.5 1.0 1.5 2.0 2.5

fLO = 1960 MHz

3rd L

SB

− d

Bc

G014

–40°C

25°C

85°C


−90

−80

−70

−60

−50

−40

−30

−20

0.0 0.5 1.0 1.5 2.0 2.5

fLO = 2.1 GHz

3rd L

SB

− d

Bc

G015

–40°C25°C

85°C

TRF3702



3RD LSB 3RD LSBvs vs

FREQUENCY I, Q AMPLITUDE








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−70

−60

−50

−40

−30

−20

−10

0

3.0 3.5 4.0 4.5

VCM − V


3rd L

SB

− d

Bc

G031

25°C

85°C–40°C

−80

−75

−70

−65

−60

−55

−50

−45

−40

4.4 4.6 4.8 5.0 5.2 5.4 5.6



3rd L

SB

− d

Bc

G037

25°C

–40°C

85°C

−80

−75

−70

−65

−60

−55

−50

−45

−40

−12 −9 −6 −3 0 3 6 9 12


3rd L

SB

− d

Bc

G042

–40°C

25°C


85°C

100

120

140

160

180

200

4.4 4.6 4.8 5.0 5.2 5.4 5.6



I CC

− S

uppl

y C

urre

nt −

mA

G032

85°C

–40°C

25°C

TRF3702




VCM SUPPLY VOLTAGE


3RD LSB SUPPLY CURRENTvs vs

LOCAL OSCILLATOR INPUT POWER SUPPLY VOLTAGE





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−156

−154

−152

−150

−148

−146

−144

−142

−25 −20 −15 −10 −5 0 5

fLO = 1960 MHz

Noi

se −

dB

m/H

z

G046

25°C

85°C

–40°C


−156

−154

−152

−150

−148

−146

−144

−142

−25 −20 −15 −10 −5 0 5

fLO = 2.1 GHz

Noi

se −

dB

m/H

z

G063

85°C

–40°C

25°C

Noise − dBm/Hz

0

2

4

6

8

10

12

14

16

Per

cent

age

−150

.0

−149

.6

−149

.8

−149

.4

−149

.2

−149

.0

−148

.8−1

48.6

−148

.4

−148

.2

−148

.0

−147

.8

G065


−147

.6

−147

.4

−147

.2

Noise − dBm/Hz

0

2

4

6

8

10

12

14

16

18

20

Per

cent

age

−148

.4

−148

.0

−148

.2

−147

.8

−147

.6

−147

.4

−147

.2

−147

.0

G064


TRF3702



NOISE AT 6-MHz OFFSET NOISE AT 60-MHz OFFSETvs vs

OUTPUT POWER OUTPUT POWER


NOISE DISTRIBUTION AT 6-MHz NOISE DISTRIBUTION AT 6-MHzOFFSET OVER TEMPERATURE OFFSET OVER TEMPERATURE





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Noise − dBm/Hz

0

2

4

6

8

10

12

14

16

18

20

Per

cent

age

−151

.8

−151

.4

−151

.6

−151

.2

−151

.0

−150

.8

−150

.6

−150

.4

−150

.2

−150

.0

−149

.8

−149

.6

G066

POUT = 0 dBmfLO = 2.1 GHz

−149

.4THEORY OF OPERATION

TRF3702



NOISE DISTRIBUTION AT 60-MHzOFFSET OVER TEMPERATURE

Figure 62.

The TRF3702 employs a double-balanced mixer architecture in implementing the direct I, Q upconversion. The I,Q inputs can be driven single-endedly or differentially, with comparable performance in both cases. The commonmode level (VCM) of the four inputs (IVIN, IREF, QVIN, QREF) is typically set to 3.7 V and needs to be drivenexternally. These inputs go through a set of differential amplifiers and through a V-I converter to feed thedouble-balanced mixers. The ac-coupled LO input to the device goes through a phase splitter to provide thein-phase and quadrature signals that in turn drive the mixers. The outputs of the mixers are then summed,converted to single-ended signals, and amplified before they are fed to the output port RFOUT. The output ofthe TRF3702 is ac-coupled and can drive 50-Ω loads.




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EQUIVALENT CIRCUITS

S0001-01

LO

50 Ω

S0002-01

I, Q Baseband

S0003-01

RFOUT Power Down50 kΩ

S0004-01

TRF3702


Figure 63 through Figure 66 show equivalent schematics for the main inputs and outputs of the device.

Figure 63. LO Equivalent Input Circuit Figure 64. IVIN, QVIN, IREF, QREF Equivalent Circuit

Figure 65. RFOUT Equivalent Circuit Figure 66. Power-Down (PWD) Equivalent Circuit




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APPLICATION INFORMATION

DRIVING THE I, Q INPUTS

Implementing a Single-to-Differential Conversion for the I, Q inputs

TRF3702


There are several ways to drive the four baseband inputs of the TRF3702 to the required amplitude and dcoffset. The optimal configuration depends on the end application requirements and the signal levels desired bythe designer.

The TRF3702 is by design a differential part, meaning that ideally the user should provide fully complementarysignals. However, similar performance in every respect can be achieved if the user only has single-endedsignals available. In this case, the IREF and QREF pins just need to have the VCM dc offset applied.

In case differential I, Q signals are desired but not available, the THS4503 family of wideband, low-distortion,fully differential amplifiers can be used to provide a convenient way of performing this conversion. Even ifdifferential signals are available, the THS4503 can provide gain in case a higher voltage swing is required.Besides featuring high bandwidth and high linearity, the THS4503 also provides a convenient way of applyingthe VCM to all four inputs to the modulator through the VOCM pin (pin 2). The user can further adjust the dclevels for optimum carrier suppression by injecting extra dc at the inputs to the operational amplifier, or byindividually adding it to the four outputs. Figure 67 shows a typical implementation of the THS4503 as a driverfor the TRF3702. Gain can be easily incorporated in the loop by adjusting the feedback resistors appropriately.For more details, see the THS4503 data sheet at www.ti.com.




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S0005-02

Single-Ended I Input374 Ω

VCM

0.01 µF 0.1 µF

+

VOCM

−

VOUT−

VOUT+

8

2

1

5

4

NC

7

+VCC

3

−VCC

6

402 Ω

392 Ω

0.01 µF 0.1 µF

+8 VA

10 pF

22.1 Ω IREFIREF

22.1 Ω IVINIVIN

0.1 µF 0.01 µF

−8 VA

392 Ω

10 pF

THS4503

TRF3702


APPLICATION INFORMATION (continued)

Figure 67. Using the THS4503 to Condition the Baseband Inputs to the TRF3702 (I Channel Shown)




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DRIVING THE LOCAL OSCILLATOR INPUT

CE10

REFIN8

LE13

DATA12

CLK11

CP

GN

D

AG

ND

DG

ND

RFINB5

MUXOUT14

RFINA 6

RSET1

CPOUT2

VCP 16

DV

DD

15AV

DD

7

TRF3750

1 nF

CLK

DATA

LE

10 pF

VCP

1 nF 10 nF 82 pF

VVCO

100 pF

100 pF

100 pF

AVDD

100 pF

RSET

LOCK DETECT

VCO

V TUNE

GND GND

OUT

GND

SUPPLY

DECOUPLING NOT SHOWN

To TRF3702LO Input

TCXO(10-MHz Reference)

10 F0.1 F

20 k

3.9 k

4.7 k

16.5

16.5

16.5

49.9

10 pF

10 F0.1 F

3 4 9

0.1 F10 F

10 pF

DVDD

0.1 F10 F

+ 10 pF

+

+

+

S0009-02

PCB LAYOUT CONSIDERATIONS

TRF3702



The LO pin is internally terminated to 50 Ω, thus enabling easy interface to the LO source without the need forexternal impedance matching. The power level of the LO signal should be in the range of –6 dBm to 6 dBm. Forcharacterization purposes, a power level of 0 dBm was chosen. An ideal way of driving the LO input of theTRF3702 is by using the TRF3750, an ultralow-phase-noise integer-N PLL from Texas Instruments. Combiningthe TRF3750 with an external VCO can complete the loop and provide a flexible, convenient, and cost-effectivesolution for the local oscillator of the transmitter. Figure 68 shows a typical application for the LO driver networkthat incorporates the TRF3750 integer-N PLL synthesizer into the design. Depending on the VCO output and theamount of signal loss, an optional gain stage may be added to the output of the VCO before it is applied to theTRF3702 LO input.

Figure 68. Typical Application Circuit for Generating the LO Signal for the TRF3702 Modulator

The TRF3702 is a high-performance RF device; hence, care should be taken in the layout of the PCB in order toensure optimum performance. Proper decoupling with low-ESR ceramic chip capacitors is needed for the VCCsupplies (pins 6 and 10). Typical values used are in the order of 1 pF parallel to 0.1 µF, with the lower-valuedcapacitors placed closer to the device pins. In addition, a larger tank capacitor in the order of 10 µF should beplaced on the supply line as layout permits. At least a 4-layer board is recommended for the PCB. If possible, asolid ground plane and a ground pour is also recommended, as is a power plane for the supplies. Because thebalance of the four I, Q inputs to the modulator can be critical to device performance, care should be taken toensure that the trace runs for all four inputs are equal in length. In the case of single-ended drive of the I, Qinputs, the two unused pins IREF and QREF are fed with the VCM dc voltage only, and should be decoupledwith a 0.1-µF capacitor (or smaller). The LO input trace should be minimized in length and have controlledimpedance of 50 Ω. No external matching components are needed because there is an internal 50-Ωtermination. The RFOUT pin should also have a relatively small trace to minimize parasitics and coupling, andshould also be controlled to 50 Ω. An impedance-matching network can be used to optimize power transfer, butis not critical. All the results shown in the data sheet were taken with no impedance matching network used(RFOUT directly driving an external 50-Ω load).

The exposed thermal and ground pad on the bottom of the TRF3702 should be soldered to ground to ensureoptimum electrical and thermal performance. The landing pattern on the PCB should include a solid pad and 4thermal vias. These vias typically have 1,2-mm pitch and 0,3-mm diameter. The vias can be arranged in a 2×2array. The thermal pad on the PCB should be at least 1,65×1,65 mm. A suggested layout is shown in Figure 69.




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0.8 mm

3.5 mm

3.2 mm

1.2 mm

1 mm x 0.432 mm(16 Places)

M0002-01

Via 0.3 mm Drill(4 Places)

Power Pad1.65 mm x 1.65 mm

IMPLEMENTING A DIRECT UPCONVERSION TRANSMITTER USING A TI DAC

TRF3702



Figure 69. Board Layout for the TRF3702 Device

The TRF3702 is ideal for implementing a direct upconversion transmitter, where the input I, Q data can originatefrom an ASIC or a DAC. Texas Instruments' line of digital-to-analog converters (DAC) is ideally suited forinterfacing to the TRF3702. Such DACs include, among others, the DAC290x series, DAC5672, and DAC5686.

This section illustrates the use of the DAC5686, which offers a unique set of features that make interfacing tothe TRF3702 easy and convenient. The DAC5686 is a 16-bit, 500 MSPS, 2×–16× interpolating dual-channelDAC, and it features I, Q adjustments for optimal interface to the TRF3702. User-selectable, 11-bit offset and12-bit gain adjustments can optimize the carrier and sideband suppression of the modulator, resulting inenhanced performance and relaxed filtering requirements at RF. The preferred mode of operation of theDAC5686 for direct interface with the TRF3702 at baseband is the dual-DAC mode. The user also has theflexibility of selecting any one of the four possible complex spectral bands to be fed into the TRF3702. Fordetails on the available modes and programming, see the DAC5686 data sheet available at www.ti.com.

Figure 70 shows the DAC5686 in dual-DAC mode, which is best-suited for zero-IF interface to the TRF3702. Inthis mode, a seamless, passive interface between the DAC output and the input to the modulator is used, sothat no extra components are needed between the two devices. The optimum dc offset level for the inputs to theTRF3702 (VCM) is approximately 3.7 V. The output of the DAC should be centered around 3.3 V or less(depending on signal swing), in order to ensure that its output compliance limits are not exceeded. The resistivenetwork shown in Figure 70 allows for this dc offset transition while still providing a dc path between the DACoutput and the modulator. This ensures that the dc offset adjustments on the DAC5686 can still be applied tooptimize the carrier suppression at the modulator output. The combination of the DAC5686 and the TRF3702provides a unique signal-chain solution with state-of-the-art performance for wireless infrastructure applications.




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IOUTB1

IOUTB2

IOUTA1

IOUTA216-BitDAC

DA[15:0]

DB[15:0]

Fdata

A Gain

AOffset

16-BitDAC

BOffset

B Gain

DEMUX

GND +5 V

+5 VGND

+45°

–45°RFOUT

IVIN

IREF

QVIN

QREF

LO

50 Ω

VCC

PWD GND

Σ

DAC5686 TRF3701

S0010-01

221 221 49.9

49.9

15

15

15

15

221 22149.9

49.9

GSM Applications

TRF3702



Figure 70. DAC5686 in Dual-DAC Mode With Quadrature Modulator

The TRF3702 is ideally suited for GSM applications, because it combines high linearity with low noise levels.Figure 60 and Figure 61 show the distribution of noise vs output power for the TRF3702 over the entirerecommended temperature range. The level of noise attained in combination with the superior IMD3performance shown in Figure 40 means that the user can reach superior levels of C/N while maintaining highlinearity. This combination offers the capability of delivering low levels of EVM, meeting the stringentrequirements imposed by the GSM/EDGE standards. Figure 71 shows the spectral mask compliance for thedevice versus channel power, for both 400-kHz and 600-kHz offsets.




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Channel Power − dBm

0

10

20

30

40

50

60

70

80

90

−14 −12 −10 −8 −6 −4 −2 0

fLO = 2 GHzGM

SK

Spe

ctra

l Per

form

ance

− d

Bc

in 3

0 kH

z

G047

600-kHz Offset

400-kHz Offset

WCDMA Applications

TRF3702


APPLICATION INFORMATION (continued)GMSK SPECTRAL PERFORMANCE

vsCHANNEL POWER

Figure 71.

The TRF3702 is also optimized for WCDMA applications, where both adjacent-channel power ratio (ACPR) andnoise density are critically important. Figure 62 shows the noise performance of the modulator at a 60-MHzoffset over temperature. In addition, Figure 72 shows the 60-MHz offset noise measured at the output of theTRF3702 versus WCDMA channel power. Using Texas Instruments' DAC568x series of high-performancedigital-to-analog converters in the configuration depicted in Figure 70, state-of-the-art levels of ACPR have beenmeasured. In each case, test model 1 was used with 64 active channels as the baseband input to the TRF3702.Figure 73 shows the performance attained for a single WCDMA carrier at 2.14 GHz, with a measured ACPR of71.2 dBc for a channel power of –14 dBm. This unprecedented level of ACPR along with the low levels of noiseat 60-MHz offset makes the TRF3702 an optimum choice for such applications. Figure 74 shows thesingle-carrier WCDMA ACPR performance versus channel power; it is important to note that even at high outputpower levels, the TRF3702 maintains great linearity, offering 64 dBc of ACPR at an output-channel power of –8dBm.




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−153.6

−153.4

−153.2

−153.0

−152.8

−152.6

−152.4

−152.2

−152.0

−20 −15 −10 −5 0

Noi

se −

dB

m/H

z

G068f − Frequency − MHz

−120

−100

−80

−60

−40

−20

0

2125 2130 2135 2140 2145 2150 2155

fLO = 2140 MHzChannel Power = −14 dBmACPR = 71.2 dBc

Pow

er −

dB

m

G067


63

64

65

66

67

68

69

70

71

72

−25 −20 −15 −10 −5 0

AC

PR

− d

Bc

G068

TRF3702



NOISE AT 60-MHz OFFSETvs

WCDMA CHANNEL POWER SINGLE-CARRIER WCDMA PERFORMANCE


SINGLE-CARRIER WCDMA ACPRvs

CHANNEL POWER

Figure 74.




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Channel Power (Per Carrier) − dBm

57

58

59

60

61

62

63

64

−30 −25 −20 −15 −10

AC

PR

− d

Bc

G070f − Frequency − MHz

−120

−100

−80

−60

−40

−20

0

2110 2120 2130 2140 2150 2160 2170

fLO = 2140 MHzTotal Carrier Power = −16.7 dBmACPR = 62.8 dBcALT ACPR = 63.7 dBc

Pow

er −

dB

m

G069

TRF3702



The TRF3702 can also be used for multicarrier applications, as is illustrated in Figure 75. For a 4-carrier case ata total output power of –16.7 dBm, an ACPR of almost 63 dBc can be reached. Figure 76 shows the ACPRprofile for a 4-carrier WCDMA application versus per-carrier channel power. Further improvements inperformance can be achieved by including a low-pass filter between the output of the DAC and the input to theTRF3702, based on the frequency planning and specific requirements of a given design. The combination of theTRF3702, the DAC568x, and the TRF3750 provides a unique signal-chain chipset capable of deliveringstate-of-the-art levels of performance for the most challenging WCDMA applications.

FOUR-CARRIER WCDMA ACPRvs

FOUR-CARRIER WCDMA ACPR PERFORMANCE CHANNEL POWER (PER CARRIER)





PACKAGE OPTION ADDENDUM

www.ti.com 21-Dec-2017

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TRF3702IRHC LIFEBUY VQFN RHC 16 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 3702TRF

TRF3702IRHCG4 LIFEBUY VQFN RHC 16 90 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 85 3702TRF

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 21-Dec-2017

Addendum-Page 2

IMPORTANT NOTICE

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