spice model of tpcp8402 (professional+bdp n&p model) in spice park

All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCP8402 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode REMARK: Silicon N&P Channel MOS Type


MOSFET MODEL

Pspice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Modility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


P-Channel Model

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(A) gfs

Error(%) Measurement Simulation

-0.500 4.000 4.025 0.625

-1.000 5.700 5.800 1.754

-2.000 7.000 7.036 0.514

-5.000 8.900 8.846 -0.606


open

R1

100MEG

U16

TPCP8402

0

open

0

V3

0Vdc

V1

-10Vdc

open

open

V20Vdc

open

V_V2

0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V

I(V3)

0A

-2.0A

-4.0A

-6.0A

-8.0A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


Comparison Graph Circuit Simulation Result

Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

-1.000 -2.150 -2.100 -2.325

-2.000 -2.320 -2.286 -1.465

-4.000 -2.600 -2.557 -1.653

-6.000 -2.800 -2.779 -0.750

-8.000 -3.000 -2.977 -0.767


U16

TPCP8402

VGS

-4.5Vdc

0

open

0

V3

0Vdc

VDS0Vdcopen open

open

R1

100MEG

open

V_VDS

0V -50mV -150mV -250mV -350mV -450mV

I(V3)

0A

-0.5A

-1.0A

-1.5A

-2.0A

-2.5A

-3.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-1.7A, VGS=-4.5V Measurement Simulation Error (%)

RDS (on) 80.000 m 80.000 m 0.000


Time*1ms

0 2n 4n 6n 8n 10n 12n 14n 16n

V(W1:2)

0V

-1.25V

-2.50V

-3.75V

-5.00V

-6.25V

-7.50V

-8.75V

-10.00V

-11.25V

-12.50V

-13.75V

-15.00V

open

D1

DbreakR1

100MEG

openI1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n

0

U16

TPCP8402

open

V2

0Vdc

V1-24Vdc

I2-3.4Adc

open

0

-

+

W1

ION = 0uAIOFF = 100uAW

open

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-24V,ID=-3.4A ,VGS=-10V

Measurement Simulation Error (%)

Qgs 1.400 nC 1.393 nC -0.500

Qgd 2.700 nC 2.712 nC 0.445

Qg 14.000 nC 14.000 nC 0.000

VDD=-24V

-12V

-6V


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.200 45.000 44.300 -1.556

0.500 33.000 33.520 1.575

1.000 24.000 24.850 3.541

2.000 17.000 17.000 0.000

5.000 10.000 9.980 -0.200

10.000 7.000 6.870 -1.857

Simulation

Measurement


Time

4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us

V(2) V(3)/1.5

0V

-4V

-8V

-12V

open

RG

4.7

V2TD = 2u

TF = 7nPW = 20uPER = 2000u

V1 = 0

TR = 6n

V2 = -20 U16

TPCP8402

R2

8.82

open

open

0

V1-15Vdc

0

R1

4.7

open

L1

30nH

openR9

100MEG

L2

50nH

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=-3.4A, VDD=-15V VGS=0/10V

Measurement Simulation Error(%)

ton 12.000 ns 11.935 ns -0.541

VGS

ID

Vg = 0/-10.0V

VDD =-15V


V_Vvariable

0V -1.0V -2.0V -3.0V -4.0V -5.0V

I(Vdsense)

0A

-2A

-4A

-6A

-8A

-10A

openVv ariable

-10Vdc

Vstep

-10Vdc

Vdsense

0Vdc

open

openopen

U16

TPCP8402

0

R1

100MEG

0

open

Output Characteristic


Evaluation circuit

VGS=-2.3V

-2.5V

-2.6V

-2.7V

-3.5V

-2.8V

-4.5V


Ropen

100MEG

open

R1

0.01m

0

0

V1

0Vdc

U16

TPCP8402

openopen

openopen

V_V3

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

I(V2)

100mA

1.0A

10A

Forward Current Characteristic


Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.100 0.600 0.605 0.833

0.200 0.660 0.653 -1.061

0.500 0.720 0.718 -0.278

1.000 0.780 0.769 -1.410

2.000 0.830 0.820 -1.205

5.000 0.940 0.904 -3.830


D8402_PV1

TD = 5.0799n

TF = 10n

PW = 15u

PER = 100u

V1 = {-9.7}

TR = 10n

V2 = {10.6}

00

R1

50

Time

1.000us 1.050us0.958us 1.098us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 5.200 ns 5.160 ns -0.769

trb 10.400 ns 10.400 ns 0.000

trr 15.600 ns 5.240 ns -2.307


Reverse Recovery Characteristic Reference

Trj=5.2(ns) Trb=10.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


Ropen

100MEG

0

open

open

0

open

open open

open

V1

0Vdc

open

R1

0.01m

U16

TPCP8402

V_V1

0V -5V -10V -15V -20V -25V -30V -35V -40V -45V

I(R1)

0A

-1mA

-2mA

-3mA

-4mA

-5mA

-6mA

-7mA

-8mA

-9mA

-10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference


N-Channel Model

Transconductance Characteristic


Comparison table

Id(A) gfs


0.500 3.000 3.100 3.333

1.000 5.000 5.181 3.620

2.000 7.000 6.898 -1.457

5.000 9.300 9.572 2.924


V_V2

0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V

I(V3)

0A

2.0A

4.0A

6.0A

8.0A

U16

TPCP8402

0

open

open

R1

100MEG

V3

0Vdc

open

open

V1

10VdcV20Vdc

0

open

Vgs-Id Characteristic


Evaluation circuit



Simulation Result

ID(A) VGS(V)

Error (%) Measurement Simulation

1.000 2.700 2.697 -0.111

2.000 2.900 2.896 -0.138

4.000 3.200 3.206 0.187

6.000 3.500 3.462 -1.086

8.000 3.700 3.691 -0.243


VGS

4.5Vdc

V3

0Vdc

Ropen

100MEG

open

0

open open

U16

TPCP8402

open

0

open

VDS0Vdc

V_V2

0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV

I(V3)

0A

1.0A

2.0A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=3.1A, VGS=4.5V Measurement Simulation Error (%)

RDS (on) 58.000 m 5.969 m -0.053


Time*1ms

0 2n 4n 6n 8n 10n 12n 14n 16n

V(W1:2)

0V

1.25V

2.50V

3.75V

5.00V

6.25V

7.50V

8.75V

10.00V

11.25V

12.50V

13.75V

15.00V

U16

TPCP8402

0

V2

0Vdc

open open

I1

TD = 0

TF = 10nPW = 600uPER = 1000u

I1 = 0

I2 = 1m

TR = 10n-

+W1

ION = 0uAIOFF = 100uAW

I26Adc

V124Vdc

open

open

Ropen

100MEG

D1

Dbreak

0

open

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=24V,ID=6A ,VGS=10V


Qgs 1.700 nC 1.658 nC -2.470

Qgd 2.400 nC 2.400 nC 0.000

Qg 10.000 nC 10.000 nC 0.000


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)


0.100 120.000 120.000 0.000

0.200 105.000 106.215 1.157

0.500 80.000 81.540 1.925

1.000 60.000 60.876 1.460

2.000 42.000 43.052 2.505

5.000 25.000 25.000 0.000

10.000 16.000 16.120 0.750

Simulation

Measurement


Time

4.96us 4.98us 5.00us 5.02us 5.04us 5.06us 5.08us

V(2) V(3)/1.5

0V

4V

8V

12V

open

L1

30nHopen

R2

7.14

L2

50nHRG

4.7

open

V2TD = 2u

TF = 7nPW = 20uPER = 2000u

V1 = 0

TR = 6n

V2 = 20 R1

4.7

open

0

0

U16

TPCP8402

open

Ropen

100MEG

V115Vdc

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=2.1 A, VDD=15V VGS=0/10V

Measurement Simulation Error(%)

ton 8.300 ns 8.700 ns 4.819

VGS

ID Vg = 0/10.0V

VDD = 15V


V_V2

0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V

I(V3)

0A

1A

2A

3A

4A

5A

6A

7A

8A

9A

10A

U16

TPCP8402

open

open

Vstep

10Vdc

open

0

Vv ariable

10Vdcopen

R1

100MEG

open

0

Vdsense

0Vdc

Output Characteristic


Evaluation circuit

VGS=2.8V

3.5V

3.0V

3.2V

6V

10V, 8V 4.5V

3.8V


open0

V1

0Vdc

open

open

0

R1

0.01m

U16

TPCP8402

open

open

Ropen

100MEG

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V

I(R1)

100mA

1.0A

10A

Forward Current Characteristic


Evaluation Circuit



Simulation Result

Ifwd(A) Vfwd(V)

Measurement Vfwd(V)

Simulation %Error

0.100 0.710 0.706 - 0.563

0.200 0.720 0.723 0.416

0.500 0.750 0.750 0.000

1.000 0.780 0.780 0.000

2.000 0.820 0.820 0.000

5.000 0.910 0.908 - 0.219

10.000 1.020 1.020 0.000


0

R1

50

D8402_N

0

V1

TD = 5.0799n

TF = 10n

PW = 15u

PER = 100u

V1 = {-9.7}

TR = 10n

V2 = {10.6}

Time

1.000us 1.050us0.958us 1.098us

I(R1)

-400mA

-300mA

-200mA

-100mA

-0mA

100mA

200mA

300mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation


trj 4.800 ns 4.800 ns 0.000

trb 11.600 ns 11.600 ns 0.000

trr 16.400 ns 16.400 ns 0.000


Reverse Recovery Characteristic Reference

Trj=4.8(ns) Trb=11.6(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


open

open

0

openRopen

100MEG

V1

0Vdc

U16

TPCP8402 0

open

open

open

open

R1

0.01m

V_V1

0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V

I(R1)

0A

1mA

2mA

3mA

4mA

5mA

6mA

7mA

8mA

9mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

spice model of tpcp8402 (professional+bdp n&p model) in spice park

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