spice model of tpcp8401 (professional+bdp n&p model) in spice park

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Device Modeling Report

Bee Technologies Inc.

COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCP8401 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode REMARK: Silicon N&P Channel MOS Type


MOSFET MODEL

PSpice model parameter

Model description

LEVEL

L Channel Length

W Channel Width

KP Transconductance

RS Source Ohmic Resistance

RD Ohmic Drain Resistance

VTO Zero-bias Threshold Voltage

RDS Drain-Source Shunt Resistance

TOX Gate Oxide Thickness

CGSO Zero-bias Gate-Source Capacitance

CGDO Zero-bias Gate-Drain Capacitance

CBD Zero-bias Bulk-Drain Junction Capacitance

MJ Bulk Junction Grading Coefficient

PB Bulk Junction Potential

FC Bulk Junction Forward-bias Capacitance Coefficient

RG Gate Ohmic Resistance

IS Bulk Junction Saturation Current

N Bulk Junction Emission Coefficient

RB Bulk Series Resistance

PHI Surface Inversion Potential

GAMMA Body-effect Parameter

DELTA Width effect on Threshold Voltage

ETA Static Feedback on Threshold Voltage

THETA Mobility Modulation

KAPPA Saturation Field Factor

VMAX Maximum Drift Velocity of Carriers

XJ Metallurgical Junction Depth

UO Surface Mobility


0.01

0.06

0.11

0.16

0.21

0.26

0 20 40 60 80 100

ID(mA)

gfs

Measurement

Simulation

N-Channel Model

Transconductance Characteristic

Circuit Simulation Result

Comparison table

Id(mA) gfs

Error (%) Measurement Simulation

1 0.030 0.029 -3.333

2 0.040 0.040 0

5 0.063 0.064 1.587

10 0.090 0.091 1.111

20 0.133 0.128 -3.759

50 0.200 0.203 1.500

100 0.294 0.287 -2.381


OPEN

0

V2

5R1

1G

V3

0Vdc

OPEN

U1

TPCP8401

V1

2

0

V_V1

0V 1.0V 2.0V 3.0V

I(V3)

1.0mA

10mA

100mA

1.0A

Vgs-Id Characteristic

Circuit Simulation result

Evaluation circuit


1

10

100

0 1 2 3

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urr

en

t (m

A)

Measurement

Simulation

Comparison Graph Circuit Simulation Result

Simulation Result

ID(mA) VGS(V)


1 1 1.0373 3.730

2 1.05 1.0668 1.600

5 1.15 1.1254 -2.139

10 1.22 1.1914 -2.344

20 1.32 1.2847 -2.674

50 1.5 1.47 -2.000

100 1.7 1.6790 -1.235


V1

4

V2

0Vdc

R1

1G

OPEN

V3

0Vdc

0

OPEN

0

U1

TPCP8401

V_V3

0V 10mV 20mV 30mV

I(V2)

0A

5mA

10mA

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=10mA, VGS=4V Measurement Simulation Error (%)

RDS (on) 1.5 1.5577 3.847


U1

TPCP8401

0

OPENDbreak

D1

V1

15

I1

TD = 0

TF = 10nPW = 300uPER = 500u

I1 = 0I2 = 1m

TR = 10nOPEN

-

+W1

ION = 0IOFF = 100u

W

ROFF = 1e6RON = 1.0

I2

0.1

0

R1

1G

Time*1mA

0 0.4n 0.8n 1.2n 1.6n 2.0n

V(W1:3)

0V

1.0V

2.0V

3.0V

4.0V

5.0V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=15V,ID=0.1A Measurement Simulation Error (%)

Qgs 0.12 nC 0.1196 nC -0.333

Qgd 0.304 nC 0.299 nC -1.645

Qg 0.8 nC 0.816 nC 2.000


0

1

2

3

4

5

0 0.4 0.8 1.2 1.6 2

GATE CHARGE Qg(nc)

GA

TE

VO

LT

AG

E V

gVDD=15V

Reference


Capacitance Characteristic

Simulation Result

VDS(V) Cbd(pF)

Error(%) Measurement Simulation

0.1 7.2 7.19 -0.139

0.2 7 7 0

0.5 6.5 6.53 0.462

1 6 6 0.000

2 5.4 5.37 -0.556

5 4.5 4.51 0.222

10 3.9 3.88 -0.513

20 3.3 3.32 0.606

Simulation

Measurement


VOUT

0

3

0

VD3Vdc

Vsense L3

30nH

R6

1G

L4

30nHU1

TPCP8401

RL

300

VGS

OPEN

0

OPEN

R5

50

C1

100u

Time

10.000us 10.400us9.697us 10.700us

V(VOUT)/1.2 V(VGS)

0V

1.0V

2.0V

3.0V

4.0V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=10m A, VDD=3V VGS=0/2.5V

Measurement Simulation Error(%)

ton 70.000 ns 72.416 ns 3.451

VGS

ID


V3

0Vdc

U1

TPCP8401

0

OPEN

0

OPEN

R1

1G

V1

1.3

V2

2

V_V2

0V 0.5V 1.0V 1.5V 2.0V

I(V3)

0A

50mA

100mA

150mA

200mA

250mA

Output Characteristic


Evaluation circuit

VGS=1.3 V

6.8

1.5 V

1.7 V

1.9 V


V1

0Vdc

0

OPEN

0

U1

TPCP8401

R2

1GOPEN

R1

0.01m

V_V1

0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V

I(R1)

0A

50mA

100mA

150mA

200mA

250mA

Forward Current Characteristic


Evaluation Circuit


0

50

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

Source-Drain voltage VSD(V)

Dra

in r

evers

e c

urr

en

t ID

R(m

A)

Measurement

Simulation


Simulation Result

Ifwd(mA)

VSD(V)

%Error Measurement Simulation

5 0.6 0.601 0.167

10 0.65 0.646 -0.615

20 0.69 0.694 0.580

50 0.765 0.763 -0.261

100 0.825 0.826 0.121


U1

D8401_NV1

TD = 0

TF = 10nPW = 15uPER = 100u

V1 = -9.2

TR = 10n

V2 = 10.9

RL

50

0

Time

14.96us 15.00us 15.04us 15.08us 15.12us 15.16us

I(RL)

-400mA

-200mA

0A

200mA

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

Trj(ns) 14 14.001 0.007

Trb(ns) 25.6 25.594 -0.023

Trr(ns) 39.6 39.595 -0.013


Reverse Recovery Characteristic Reference

Trj=14(ns) Trb=25.6(ns) Conditions:Ifwd=lrev=0.02(A),Rl=50

Relation between trj and trb

Example


R2

1G

OPEN

R1

0.01m

OPEN

0

U1

TPCP8401

R3

1G

0

V1

0Vdc

V_V1

0V 25V 50V

I(R1)

0A

5mA

10mA

ESD PROTECTION DIODE Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference


2.5

3.5

4.5

5.5

6.5

7.5

8.5

9.5

0 0.4 0.8 1.2 1.6 2

ID(A)

gfs

Measurement

Simulation

P-Channel Model

Transconductance Characteristic


Comparison table

- Id(mA) gfs


0.2 2.857 2.985 4.480

0.5 4.717 4.505 -4.494

1 6.173 6.452 4.520

2 8.696 8.969 3.139


OPENOPEN

U1

TPCP8401

V2

-5R1

1G

OPEN

0

OPEN

0

V3

0Vdc

V1

-3

V_V1

0V -0.5V -1.0V -1.5V -2.0V -2.5V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Vgs-Id Characteristic


Evaluation circuit


0.2

0.6

1

1.4

1.8

0 1 2 3

VGS - Gate to Source Voltage - V

ID -

Dra

in C

urr

en

t (A

)

Measurement

Simulation


Simulation Result

- ID(mA) - VGS(V)


0.2 1.1 1.1027 0.245

0.5 1.17 1.1857 1.342

1 1.25 1.28 2.400

2 1.35 1.4131 4.674


V1

-4.5

0

V2

0Vdc

OPEN

OPEN

V3

0Vdc

R1

1G

0

U1

TPCP8401

V_V3

0V -50mV -100mV -150mV -200mV

I(V2)

0A

-1.0A

-2.0A

-2.8A

Rds(on) Characteristic


Evaluation circuit

Simulation Result

ID=-2.8A, VGS=-4.5V Measurement Simulation Error (%)

RDS (on) 31.000 m 31.761 m 2.455


I2

-5.5

U1

TPCP8401

-

+

W1

ION = 0IOFF = 100uA

W

ROFF = 1e6RON = 1.0

OPEN

I1 TD = 0TF = 10nPW = 200uPER = 500uI1 = 0I2 = 1mTR = 10n

0

0

V1

-10

OPEN

R1

1G

DbreakD1

Time*1mA

0 8n 16n 24n 32n 40n

V(W1:4)

0V

-1.0V

-2.0V

-3.0V

-4.0V

-5.0V

Gate Charge Characteristic


Evaluation circuit

Simulation Result

VDD=-10V,ID=-5.5A ,VGS=-5V


Qgs(nC) 5.5 5.4732 -0.487

Qgd(nC) 4.5 4.6618 3.596

Qg(nC) 20.5 20.547 0.229


Capacitance Characteristic

Simulation Result

- VDS(V) Cbd(pF)


0.1 300 298 -0.667

0.2 270 273 1.111

0.5 220 218 -0.909

1 170 173 1.765

2 130 127 -2.308

5 80 81 1.250

10 55 56 1.818

Simulation

Measurement


0

V2

TD = 2u

TF = 4nPW = 10uPER = 30u

V1 = 0

TR = 4n

V2 = -5

OPEN

R1

1G

L2

30nH

R2

2.1

0

R4

4.7

L1

50nH

U1

TPCP8401

OPEN

V1

-6

Time

1.9us 2.0us 2.1us 2.2us

V(U1:5) V(U1:2)/1.2

0V

-2V

-4V

-6V

-8V

-10V

Switching Time Characteristic


Evaluation circuit

Simulation Result

ID=-2.8 A, VDD=-6V VGS=0/-5V

Measurement Simulation Error(%)

Ton(ns) 16 16.039 0.244

VGS

ID


OPEN

0

OPEN

OPEN

OPEN

R1

1G

0

V3

0Vdc

V2

-5V1

-1.4

U1

TPCP8401

V_V2

0V -2.0V -4.0V -5.0V

I(V3)

0A

-2A

-4A

-6A

-8A

-10A

Output Characteristic


Evaluation circuit

VGS=-1.4V

-1.6V

-1.7V

-1.8V

-1.9V


U1

TPCP8401

OPEN

0

R1

0.01m

R2

1G

0

V1

0Vdc

OPEN

V_V1

0V 0.4V 0.8V 1.2V 1.6V 2.0V

I(R1)

1.0A

10A

100A

Forward Current Characteristic


Evaluation Circuit


1

10

100

0 0.4 0.8 1.2 1.6 2

Source-Drain voltage VSD(V)

Dra

in r

evers

e c

urr

en

t ID

R(A

)

Measurement

Simulation


Simulation Result

IDR(A)

VSD(V)

%Error Measuremen Simulation

1 0.67 0.675 0.746

2 0.73 0.727 -0.411

5 0.82 0.818 -0.244

10 0.92 0.922 0.217


0

U1

D8401_P

V1

TD = 0

TF = 10nPW = 15uPER = 100u

V1 = -9.45

TR = 10n

V2 = 10.6

RL

50

Time

15.04us 15.20us14.90us 15.30us

I(RL)

-400mA

0A

400mA

Reverse Recovery Characteristic Circuit Simulation Result

Evaluation Circuit Compare Measurement vs. Simulation


Trj(ns) 15.2 15.2 0

Trb(ns) 72.8 72.842 0.058

Trr(ns) 88 88.042 0.048


Reverse Recovery Characteristic Reference

Trj=15.2(ns) Trb=72.8(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50

Relation between trj and trb

Example


R2

1G

OPEN

0

U1

TPCP8401

R3

1G

OPEN

R1

0.01m

0

V1

0Vdc

V_V1

0V 25V 50V

I(R1)

0A

5mA

10mA

Zener Voltage Characteristic


Evaluation Circuit


Zener Voltage Characteristic Reference

spice model of tpcp8401 (professional+bdp n&p model) in spice park

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