spice model of 2sc4793 in spice park
DESCRIPTION
SPICE MODEL of 2SC4793 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.TRANSCRIPT
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC4793
MANUFACTURER: TOSHIBA
Device Modeling Report
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
TRANSISTOR MODEL
PSpice model
parameter Model description
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ic
Vce
VAR
(X1,Y1)
(X2,Y2)
Y=aX+b
Reverse Early Voltage Characteristic
Reverse
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Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
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Ic
VceVAF
(X1,Y1)
(X2,Y2)
Y=aX+b
Forward Early Voltage Characteristic
Forward
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C-B Capacitance Characteristics E-B Capacitance Characteristics
Measurement
Simulation
Measurement
Simulation
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I1
0Adc
Q1
Q2SC4793
v sence
0Vdc
0
V1
5Vdc
I(vsence)
10mA 100mA 1.0A3.0mA 3.0A
I(vsence)/ IB(Q1)
10
100
500
Transistor hFE-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
10
100
1000
0.001 0.010 0.100 1.000 10.000
IC (A)
hF
E
Measurement
Simulation
Comparison Graph
Ic(mA) hFE
Error(%) Measurement Simulation
0.003 110.000 109.561 1.004
0.005 115.000 114.721 1.002
0.01 120.000 120.613 0.995
0.02 125.000 125.486 0.996
0.05 130.000 128.814 1.009
0.1 125.000 127.079 0.984
0.2 120.000 117.909 1.018
0.5 85.000 85.538 0.994
1 39.000 40.183 0.971
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
I1
0Adc
Q1
Q2SC4793
0
VC
F1
F10
IC(Q1)
10mA 100mA 1.0A5.0mA 3.0A
V(Q1:c)
10mV
100mV
1.0V
2.0V
VCE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.1
1
0.001 0.010 0.100 1.000 10.000
IC (A)
VC
E(S
AT
) (V
)Measurement
Simulation
Comparison Graph
IC(A) VCE(sat)(V)
Error(%) Measurement Simulation
0.0050 0.0570 0.0590 3.5088
0.0100 0.0590 0.0580 -1.6949
0.0200 0.0640 0.0610 -4.6875
0.1000 0.1050 0.1000 -4.7619
0.2000 0.1400 0.1380 -1.4286
0.5000 0.2300 0.2350 2.1739
Circuit Simulation Result
Simulation Result
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
I1
0Adc
F1
F10
VC
Q1
Q2SC4793
IC(Q1)
100mA50mA 500mA
V(Q1:b)
100mV
1.0V
10V
VBE(Sat)-IC Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.1
1
10
10.00 100.00 1000.00
IC (mA)
VB
E(S
AT
) (V
)
Measurement
Simulation
Comparison Graph
IC(mA) VBE(sat)(V)
Error(%) Measurement Simulation
50.000 0.700 0.711 1.571
100.000 0.730 0.751 2.877
200.000 0.780 0.797 2.179
500.000 0.853 0.886 3.869
Circuit Simulation Result
Simulation Result
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Time
1.000ms 1.002ms 1.004ms 1.006ms 1.008ms 1.010ms
1 IC(Q1) 2 IB(Q1)
-2.0A
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
2.0A1
-200mA
-150mA
-100mA
-50mA
-0mA
50mA
100mA
150mA
200mA2
>>
Switching Characteristics Circuit simulation result
Evaluation circuit
Simulation result
Measurement Simulation %Error
tstg (us) 1.220 1.232 0.984
tf (us) 1.020 1.024 0.392
Q1
Q2SC4793
R3
36
V1
TD = 2.4us
TF = 1nsPW = 1msPER = 2ms
V1 = -5
TR = 1ns
V2 = 6
L1
50nH
R2
110
R1
100
V2
36
0
L2
50nH
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Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Q1
Q2SC4793
V110Vdc
0
I1
0Adc
V_V1
0V 2V 4V 6V 8V 10V
IC(Q1)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
Output Characteristics
Circuit Simulation Result
Evaluation Circuit
20
10
8
6
4 IB =3uA
IB=2mA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics Reference