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  • 8/12/2019 REF 200 Datasheet

    1/19

    1988 Burr-Brown Corporation PDS-851D Printed in U.S.A. October, 1993

    FEATURES

    COMPLETELY FLOATING:No Power Supply or Ground Connections

    HIGH ACCURACY: 100A 0.5% LOW TEMPERATURE COEFFICIENT:

    25ppm/C WIDE VOLTAGE COMPLIANCE:

    2.5V to 40V

    ALSO INCLUDES CURRENT MIRROR

    APPLICATIONS

    SENSOR EXCITATION

    BIASING CIRCUITRY

    OFFSETTING CURRENT LOOPS

    LOW VOLTAGE REFERENCES

    CHARGE-PUMP CIRCUITRY

    HYBRID MICROCIRCUITS

    REF200

    DUAL CURRENT SOURCE/CURRENT SINK

    DESCRIPTIONThe REF200 combines three circuit building-blocks

    on a single monolithic chiptwo 100A currentsources and a current mirror. The sections are

    dielectrically isolated, making them completely

    independent. Also, since the current sources are two-

    terminal devices, they can be used equally well as

    current sinks. The performance of each section is

    individually measured and laser-trimmed to achieve

    high accuracy at low cost.

    The sections can be pin-strapped for currents of 50A,100A, 200A, 300A or 400A. External circuitrycan be used to obtain virtually any current. These and

    many other circuit techniques are shown in the

    Applications section of this Data Sheet.

    The REF200 is available in plastic 8-pin mini-DIP

    and SOIC packages.

    I

    High

    I

    High Substrate

    Mirror

    In

    I

    Low

    I

    Low

    Mirror

    Out

    Mirror

    Common

    1 2

    1 2

    8 7 6 5

    1 2 3 4

    100A 100A

    International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111

    Internet: http://www.burr-brown.com/ FAXL ine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Im mediate Product Info: (800) 548-6132

    REF200

    REF200

    SBVS020

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    REF200 2

    SPECIFICATIONS

    At TA= +25C, VS= 15V, unless otherwise noted.

    REF200AP, AU

    PARAMETER CONDITION MIN TYP MAX UNITS

    CURRENT SOURCES

    Current Accuracy 0.25 1 %Current Match 0.25 1 %Temperature Drift Specified Temp Range 25 ppm/ COutput Impedance 2.5V to 40V 20 100 M

    3.5V to 30V 200 500 MNoise BW = 0.1Hz to 10Hz 1 nAp-p

    f = 10kHz 20 pA/ HzVoltage Compliance (1%) TMINto TMAX See Curves

    Capacitance 10 pF

    CURRENT MIRROR I = 100A UnlessOtherwise Noted

    Gain 0.995 1 1.005

    Temperature Drift 25 ppm/ CImpedance (output) 2V to 40V 40 100 MNonlinearity I = 0A to 250A 0.05 %Input Voltage 1.4 V

    Output Compliance Voltage See Curves

    Frequency Response (3dB) Transfer 5 MHz

    TEMPERATURE RANGE

    Specification 25 +85 COperating 40 +85 CStorage 40 +125 C

    ELECTRICAL

    The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes

    no responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to change

    without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant

    any BURR-BROWN product for use in life support devices and/or systems.

    PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS

    Applied Voltage ..................................................................... 6V to +40V

    Reverse Current ........................................................................... 350AVoltage Between Any Two Sections .................................................80VOperating Temperature ................................................... 40C to +85CStorage Temperature .....................................................40C to +125CLead Temperature (soldering, 10s) .............................................. +300C (SOIC 3s)........................................................+260C

    I

    I

    Substrate

    Mirror Input

    Low

    Low

    Mirror Common

    Mirror Output

    1

    2

    3

    4

    8

    7

    6

    5

    1

    2

    High

    High

    1

    2

    I

    I

    Top View DIP/SOIC

    PACKAGE

    DRAWING TEMPERATURE

    PRODUCT PACKAGE NUMBER(1) RANGE

    REF200AP 8-Pin Plastic DIP 006 25C to +85CREF200AU 8-Pin SOIC 182 25C to +85C

    NOTE: (1) For detailed drawing and dimension table, please see end of data

    sheet, or Appendix C of Burr-Brown IC Data Book. (2) Grade designation A

    may not be marked. Absence of grade designation indicates A grade.

    PACKAGE/ORDERING INFORMATION

    ELECTROSTATICDISCHARGE SENSITIVITY

    This integrated circuit can be damaged by ESD. Burr-Brown

    recommends that all integrated circuits be handled with

    appropriate precautions. Failure to observe proper handling

    and installation procedures can cause damage.

    ESD damage can range from subtle performance degradationto complete device failure. Precision integrated circuits may

    be more susceptible to damage because very small parametric

    changes could cause the device not to meet its published

    specifications.

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    REF2003

    TYPICAL PERFORMANCE CURVESAt TA= +25C, VS= +15V, unless otherwise noted.

    100.1

    100

    99.9

    99.8

    99.7

    99.6

    99.5

    2550 25 7550 1251000

    Temperature (C)

    Current(A)

    85CDrift specified by

    box method

    (See text)

    CURRENT SOURCE

    TYPICAL DRIFT vs TEMPERATURE

    600

    500

    400

    300

    200

    100

    0

    50 10

    Temperature Drift (ppm/C)

    Quantity(Units)

    Distribution of three

    production lots

    1284 Current Sources.

    2015 25 3530 40 5045 55 6560

    2 5

    117

    30 15 6 0 1 1

    501

    454

    8666

    CURRENT SOURCE

    TEMPERATURE DRIFT DISTRIBUTION

    101

    100.8

    100.6

    100.4

    100.2

    100

    99.8

    99.6

    99.4

    99.2

    Current(A)

    99

    0 5 10 15 20 25 30 35 40

    Voltage (V)

    CURRENT SOURCE

    OUTPUT CURRENT vs VOLTAGECURRENT SOURCE

    OUTPUT CURRENT vs VOLTAGE

    0

    100.5

    100.4

    100.3

    100.2

    100.1

    100

    99.9

    99.8

    99.7

    99.6

    99.5

    Voltage (V)

    1 2 3 4 5

    Current(A)

    55C

    25C

    125C

    1000

    900

    800

    700

    600

    500

    400

    300

    200

    100

    Revers

    eCurrent(A)

    0

    0 2 4 6 8 10 12

    Reverse Voltage (V)

    CURRENT SOURCE

    REVERSE CURRENT vs REVERSE VOLTAGE

    Reverse Voltage

    Circuit Model

    12k 7V

    5k

    Safe Reverse Current

    Safe Reverse VoltageOutputCu

    rrent(500pA/div)

    CURRENT SOURCE

    CURRENT NOISE (0.1Hz to 10Hz)

    Time (500ms/div)

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    REF200 4

    TYPICAL PERFORMANCE CURVES (CONT)At TA= +25C, VS= +15V, unless otherwise noted.

    MIRROR TRANSFER NONLINEARITY

    0

    0.1

    0.08

    0.06

    0.04

    0.02

    0

    0.02

    0.04

    0.06

    0.08

    0.01

    Current (A)

    50 100 150 200 250

    Nonlinearity(%o

    f250A)

    Data from Three

    Representative Units(Least-square fit)

    5

    4

    3

    2

    1

    0

    1

    2

    3

    4

    Error(%)

    5

    10A 100A 1mA

    Mirror Current (A)

    MIRROR GAIN ERROR vs CURRENT

    V =

    1.25VV = 1V

    V = 1.5V

    O

    O

    O

    InputVoltage(V)

    0

    1A 10A 100A 1mA 10mA

    Current

    MIRROR INPUT VOTAGE/OUTPUT

    COMPLIANCE VOLTAGE vs CURRENT

    4

    3

    2

    1

    Input Voltage

    Output

    Compliance

    Voltage

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    REF2005

    FIGURE 1. Simplified Circuit Diagram.

    (Substrate)

    Current

    Source

    (1 of 2)

    4k

    8X

    8,7

    5k

    1k

    1,2

    6

    3

    5 4

    1k

    12k

    Current

    Mirror

    APPLICATIONS INFORMATIONThe three circuit sections of the REF200 are electrically

    isolated from one another using a dielectrically isolated

    fabrication process. A substrate connection is provided (pin

    6), which is isolated from all circuitry. This pin should be

    connected to a defined circuit potential to assure rated DC

    performance. The preferred connection is to the most nega-

    tive constant potential in your system. In most analogsystems this would be VS. For best AC performance, leave

    pin 6 open and leave unused sections unconnected.

    Drift performance is specified by the box method, as

    illustrated in the Current vs Temperature plot of the typical

    performance curves. The upper and lower current extremes

    measured over temperature define the top and bottom of the

    box. The sides are determined by the specified temperature

    range of the device. The drift of the unit is the slope of the

    diagonaltypically 25ppm/C from 25C to +85C.

    If the current sources are subjected to reverse voltage, a

    protection diode may be required. A reverse voltage circuit

    model of the REF200 is shown in the Reverse Current vs

    Reverse Voltage curve. If reverse voltage is limited to lessthan 6V orreverse current is limited to less than 350A, noprotection circuitry is required. A parallel diode (Figure 2a)

    will protect the device by limiting the reverse voltage across

    the current source to approximately 0.7V. In some applica-

    tions, a series diode may be preferable (Figure 2b) because

    it allows no reverse current. This will, however, reduce the

    compliance voltage range by one diode drop.

    Applications for the REF200 are limitless. Application Bul-

    letin AB-165 shows additional REF200 circuits as well as

    other related current source techniques. A collection of

    circuits is shown to illustrate some techniques. Also, see

    AB-165A.

    FIGURE 2. Reverse Voltage Protection.

    100A

    Bidirectional

    Current Source

    D4 D2

    D D31

    D2

    D1100A

    100A

    NOTE: All diodes = 1N4148.

    Bidirectional

    Current Source

    (a) (b) (c) (d)

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    REF200 6

    FIGURE 3. 50A Current Source.

    FIGURE 4. 200A, 300A, and 400A Floating Current Sources.

    FIGURE 5. 50A Current Sinks.

    300A

    100A

    45

    3

    In Out

    Com

    Mirror

    100A

    Compliance = 4V

    (b)

    400A

    100A

    45

    3

    In Out

    Com

    Mirror

    100A

    Compliance = 4V

    (c)(a)

    200A

    100A 100A

    (b)

    50A

    100A

    45

    3

    In Out

    Com

    Mirror

    VS

    100k

    50A

    100A

    45

    3

    In Out

    Com

    Mirror

    (c)

    Compliance to

    V + 5.1VS

    +VS

    VS

    5.1V

    1N4689

    27k

    0.01F

    100A

    45

    3

    In Out

    Com

    Mirror

    (a)

    VS

    Compliance to

    V + 5VS

    +VS

    100A50A

    Compliance to

    Ground

    VS

    +VS

    100A

    IOUT

    100A

    50A45

    3

    In Out

    Com

    Mirror

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    REF2007

    100A/200A

    45

    3

    In Out

    Com

    Mirror

    SCompliance to V + 1.5V

    +VS

    100A100A

    SV

    FIGURE 6. Improved Low-Voltage Compliance. FIGURE 7. 100A Current Source80V Compliance.

    100A

    100A

    40k

    40k 0.01F

    0.01F

    1N41481N4148

    1N41481N4148

    (e) Bidirectional 200A

    cascoded current source.

    100A

    100A40k

    40k 0.01F

    0.01F

    (d) Floating 200A cascoded

    current source.

    100A

    Load

    VS

    +VS

    (a) Compliance approximate

    to Gnd. HV compliance

    limited by FET breakdown.

    100A

    Load

    +VS

    (b) Compliance to +V 5V.

    High

    Low

    100A

    VS

    33k0.01F

    S

    100A

    Loa

    d

    +VS

    (c)

    VS

    27k

    5.1V

    1N4689

    NOTES: (1) FET cascoded current sources offer improved output impedance and high frequency operation. Circuit in (b)

    also provides improved PSRR. (2) For current sinks (Circuits (a) and (b) only), invert circuits and use N channel JFETS.

    FIGURE 8. FET Cascode Circuits.

    101

    100

    99

    0 10 20 30 40 50 60 70 80

    Applied Voltage (V)

    Provides 2X Higher Compliance Voltage

    SERIES-CONNECTED CURRENT SOURCES

    CURRENT vs APPLIED VOLTAGE

    Current(A)

    100A

    100A

    High

    Low

  • 8/12/2019 REF 200 Datasheet

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    REF200 8

    FIGURE 9. Op Amp Offset Adjustment Circuits.

    To

    Other

    Amps

    Op Amp

    V

    R

    +V

    NOTE: (1) For N Op Amps, use Potentiometer Resistance = N 100.

    100A

    51

    51

    S

    IN

    B

    OUT

    RA

    V

    VS

    Using Standard Potentiometer

    V = V (R /R )

    Offset Adjustment Range = 5mVOUT IN B A

    To

    Other

    Amps

    Op Amp

    V

    R

    +V

    100A

    S

    IN

    B

    OUT

    RA

    V

    VS

    Using Bourns Op Amp Trimpot

    V = V (R /R )

    Offset Adjustment Range = 5mVOUT IN B A

    (1)

    100Bourns Trimpot

    (1)2k Linear

    100A 100A

  • 8/12/2019 REF 200 Datasheet

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    REF2009

    R

    100A

    Reference

    V

    100A

    S

    R2

    0.01F

    R

    (N R )2

    1

    I = N 100AOUT

    (1)

    R

    (N R )2

    1

    I = N 100AOUT

    (1)

    100A

    0.01F

    R2

    +VS

    +V

    100A

    S

    OPA602

    0.01F NR

    I = (N +1) 100AO

    R0.01F NR

    I = (N +1) 100AO

    R

    100A

    OPA602

    0.01F NR

    I = (N +1) 100AO

    10pF

    (a) (b)

    (d)(c)

    (e)

    VS

    OPA602

    R NR IOUT

    1k 4k 500A1k 9k 1mA

    100k 9.9k 10mA

    EXAMPLES

    FEATURES:

    (1) Zero volts shunt compliance.

    (2) Adjustable only to values above

    reference value.

    NOTE:Current source/sink swing to the

    Load Return rail is limited only

    by the op amp's input common

    mode range and output swing

    capability. Voltage drop across R

    can be tailored for any amplifier to

    allow swing to zero volts from rail.

    NOTE: (1) Burr BrownOPA602 or OPA128

    EXAMPLES

    R1

    R2

    IOUT

    100 10M 1nA10k 1M 1A

    10k 1k 1mA

    Use OPA128

    IO= 100A (N + 1). Compliance 3.5V

    with 0.1V across R. Max IOlimited by FET.

    For IO= 1A, R = 0.1, NR = 1k.

    FIGURE 10. Adjustable Current Sources.

  • 8/12/2019 REF 200 Datasheet

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    REF200 10

    FIGURE 12. Precision Triangle Waveform Generator.

    FIGURE 11. RTD Excitation With Three Wire Lead Resistance Compensation.

    1N4148N4148

    1N4148N4148

    BidirectionalCurrent Source1/2REF

    OPA6

    R

    CTriangle Output

    Square Output

    2Vp-p

    2Vp-p

    10 k

    Frequency = 1/4RC Hz)Frequency = 25/C Hz)C is in F and R = 10k )

    7

    V = Gain 200A RTDOUT

    A B

    O

    C

    I

    VS

    +VS

    RTDCable Shield

    200A

    Reference

    Current

    200A

    Compensation

    Current

    REF200

    1

    ROFFSET

    INA110

    Instrumentation Amplifier

    2 3 4

    8 6 5

  • 8/12/2019 REF 200 Datasheet

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    REF20011

    FIGURE 13. Precision Duty-Cycle Modulator.

    15V

    100A

    0.1F

    SiliconixJ109

    50k

    IOUTFor current source,invert circuitry anduse P-Channel FET.

    15V

    100A

    0.1F

    SiliconixJ109

    50 k

    IOU T For current source,invert circuitry anduse P-Channel FET.50 k0.1F

    100A

    FIGURE 14. Low Noise Current Sink. FIGURE 15. Low Noise Current Sink with Compliance

    Below Ground.

    100k

    1/4OPA

    60k100A + Bridge(See Figure 12)

    V = +10V: 100% Duty Cycle = +10V: 100 Duty CycleV = 0V: 50 Duty CycleV = 10V: 0 Duty Cycle

    INININ

    12Vp-pDuty Cycle Out

    C

    VIN10V V 10VIN

    100A + Bridge(See Figure 12)

    1/4OPA

    1/4OPA

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    REF200 12

    FIGURE 17. Rate Limiter.

    FIGURE 16. Floating 300A and 400A Cascoded Current Sources.

    FIGURE 18. 25mA Floating Current Source.

    27k

    In OutMirrorCom

    20k 0.01F

    0.01F100A

    100A

    High300A

    2N5116

    2N4340

    5 4

    3300ALow

    (a) Regulation (15V to 30V = 0.00003%/V (10Ga) Regulation (15V to 30V = 0.00003 /V (10G)

    In OutMirrorCom

    20k 0.01F100A

    High400A

    2N5116

    2N4340

    5 4

    3400ALow

    (a) Regulation (15V to 30V = 0.000025%/V (10Ga) Regulation (15V to 30V = 0.000025 /V (10G)

    100A

    10 0

    10 0

    10 0100

    40.20k

    Low

    V

    100A

    High

    25mACompliance4V to 30V

    NOTE: Each am plifier 1/4 LM324.Op amp po wer supplies are derivedwithin the circuitry, and this quiescentcurrent is included in the 25mA .

    S

    +VS

    10k

    10k

    OPA602

    C

    100AVS

    +VS

    V = VI

    100A

    VI

    V Rate Limit = 100A/CODiodes: 1N4148or PWS740-3Diode Bridge forreduced V .OS

    O

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    REF20013

    10 5 +5 +10

    1 0

    5

    +5

    +10

    OPA602

    100A

    1N4148

    1N4148

    R

    (50k)

    V IR

    (50k)

    +15V

    10pFVO

    OPA602

    1N4148

    1N4148

    R

    (50k)

    V IR

    (50k)

    10pFVO

    100A

    15V

    10 5 +5 +10

    1 0

    5

    +5

    +10

    For V > 5V: V = 0For V < 5V: V = V 5V Dead to 100A R)OO

    II I

    For V < 5V: V = 0For V > 5V: V = 5V V Dead to 100A R)OO

    II I

    O

    O

    V I

    V I

    FIGURE 19. Dead-Band Circuit.

    OPA602

    100A

    1N4148

    1N4148

    R

    (50k)

    R

    (50k)

    +15V

    10pF

    OPA602

    1N4148

    1N4148

    R

    (50k)

    VI

    R

    (50k)

    10pF100A

    15V

    10 5 +5 +10

    10

    5

    +5

    +10

    For V > 5V: V = V 5VFor V < 5V: V = V + 5V (Dead to 100A R)

    OO

    II I

    O

    VI

    I

    OPA602

    VO

    10k

    10k

    10k

    FIGURE 20. Double Dead-Band Circuit.

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    REF200 14

    FIGURE 22. Voltage Reference.FIGURE 21. Low-Voltage Reference.

    FIGURE 23. Bipolar Limiting Circuit.

    FIGURE 24. Limiting Circuit.

    100A

    1

    +V

    V = 100V

    S

    O

    100A

    10k

    +V

    V = 1V

    S

    OOPA602

    0.01F

    100A

    with bridge

    (See Figure 2)

    OPA121

    100F

    VOOPA121

    VIR

    (50k)

    1k

    V = V (5V < V < 5V)V = 5V (V > 5V)V = 5V (V < 5V)(Bound = 100A R)

    OOO

    I II

    I

    10 5 +5 +10

    10

    5

    +5

    +10O

    VI

    +7.5V (R = 75k)+5V (R = 50k)+2.5V (R = 25k)

    2.5V (R = 25k)+5V (R = 50k)+7.5V (R = 75k)

    R

    (50k)

    OPA121

    100F

    VOOPA121

    VI

    100A

    1k

    1N4148

    V = V (V < 5V)V = 5V (V > 5V)(V = 100A R)

    OO

    I II

    LIMIT

    10 5 +5 +10

    10

    5

    +5

    +10O

    VI

    +7.5V (R = 75k)+5V (R = 50k)+2.5V (R = 25k)

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    REF20015

    V

    V

    CENTER

    O

    I

    WV , +V = 100A RW

    WV W+V

    V

    5V

    The

    Window

    0

    1k

    VS

    VOCENTERV

    VI

    100A

    100A

    0.01F

    R(3)

    (2)

    (1)

    0.01F(1)

    R(3)

    +5V

    1/2LM393

    1/2LM393

    NOTES: (1) Capacitors optional to reduce noise and switching time.(2) Programs center of threshold voltage. (3) Programs window voltage.

    +VS

    (2)

    FIGURE 25. Window Comparator.

    FIGURE 26. Instrumentation Amplifier with Compliance to VS.

    100A

    V = +In (In)O

    100A

    VS

    INA105

    +VS

    InPMI

    MAT03+In

    1/2OPA1013

    1/2OPA1013

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    PACKAGING INFORMATION

    Orderable Device Status (1) PackageType

    PackageDrawing

    Pins PackageQty

    Eco Plan (2) Lead/Ball Finish MSL Peak Temp(3)

    REF200AP OBSOLETE PDIP P 8 TBD Call TI Call TI

    REF200AU ACTIVE SOIC D 8 75 Green (RoHS &no Sb/Br)

    CU NIPDAU Level-3-260C-168 HR

    REF200AU/2K5 ACTIVE SOIC D 8 2500 Green (RoHS &no Sb/Br)

    CU NIPDAU Level-3-260C-168 HR

    REF200AU/2K5E4 ACTIVE SOIC D 8 2500 Green (RoHS &no Sb/Br)

    CU NIPDAU Level-3-260C-168 HR

    REF200AUE4 ACTIVE SOIC D 8 75 Green (RoHS &no Sb/Br)

    CU NIPDAU Level-3-260C-168 HR

    REF200AUG4 ACTIVE SOIC D 8 75 Green (RoHS &no Sb/Br)

    CU NIPDAU Level-3-260C-168 HR

    (1) The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND:Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part ina new design.PREVIEW:Device has been announced but is not in production. Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.

    (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

    http://www.ti.com/productcontentfor the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirementsfor all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be solderedat high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die andpackage, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHScompatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flameretardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

    (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak soldertemperature.

    Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it isprovided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to theaccuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to takereasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis onincoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limitedinformation may not be available for release.

    In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TIto Customer on an annual basis.

    PACKAGE OPTION ADDENDUM

    www.ti.com 16-Feb-2009

    Addendum-Page 1

    http://www.ti.com/productcontenthttp://www.ti.com/productcontent
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    TAPE AND REEL INFORMATION

    *All dimensions are nominal

    Device PackageType

    PackageDrawing

    Pins SPQ ReelDiameter

    (mm)

    ReelWidth

    W1 (mm)

    A0 (mm) B0 (mm) K0 (mm) P1(mm)

    W(mm) Q

    REF200AU/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0

    PACKAGE MATERIALS INFORMATION

    www.ti.com 11-Mar-2008

    Pack Materials-Page 1

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    *All dimensions are nominal

    Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

    REF200AU/2K5 SOIC D 8 2500 346.0 346.0 29.0

    PACKAGE MATERIALS INFORMATION

    www.ti.com 11-Mar-2008

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    I M P O R T A N T N O T I C E

    T e x a s I n s t r u m e n t s I n c o r p o r a t e d a n d i t s s u b s i d i a r i e s ( T I ) r e s e r v e t h e r i g h t t o m a k e c o r r e c t i o n s , m o d i f i c a t i o n s , e n h a n c e m e n t s , i m p r o v e m e n t s , a n d o t h e r c h a n g e s t o i t s p r o d u c t s a n d s e r v i c e s a t a n y t i m e a n d t o d i s c o n t i n u e a n y p r o d u c t o r s e r v i c e w i t h o u t n o t i c e . C u s t o m e r s s h o u l d o b t a i n t h e l a t e s t r e l e v a n t i n f o r m a t i o n b e f o r e p l a c i n g o r d e r s a n d s h o u l d v e r i f y t h a t s u c h i n f o r m a t i o n i s c u r r e n t a n d c o m p l e t e . A l l p r o d u c t s a r e s o l d s u b j e c t t o T I s t e r m s a n d c o n d i t i o n s o f s a l e s u p p l i e d a t t h e t i m e o f o r d e r a c k n o w l e d g m e n t .

    T I w a r r a n t s p e r f o r m a n c e o f i t s h a r d w a r e p r o d u c t s t o t h e s p e c i f i c a t i o n s a p p l i c a b l e a t t h e t i m e o f s a l e i n a c c o r d a n c e w i t h T I s s t a n d a r d

    w a r r a n t y . T e s t i n g a n d o t h e r q u a l i t y c o n t r o l t e c h n i q u e s a r e u s e d t o t h e e x t e n t T I d e e m s n e c e s s a r y t o s u p p o r t t h i s w a r r a n t y . E x c e p t w h e r e m a n d a t e d b y g o v e r n m e n t r e q u i r e m e n t s , t e s t i n g o f a l l p a r a m e t e r s o f e a c h p r o d u c t i s n o t n e c e s s a r i l y p e r f o r m e d .

    T I a s s u m e s n o l i a b i l i t y f o r a p p l i c a t i o n s a s s i s t a n c e o r c u s t o m e r p r o d u c t d e s i g n . C u s t o m e r s a r e r e s p o n s i b l e f o r t h e i r p r o d u c t s a n d a p p l i c a t i o n s u s i n g T I c o m p o n e n t s . T o m i n i m i z e t h e r i s k s a s s o c i a t e d w i t h c u s t o m e r p r o d u c t s a n d a p p l i c a t i o n s , c u s t o m e r s s h o u l d p r o v i d e a d e q u a t e d e s i g n a n d o p e r a t i n g s a f e g u a r d s .

    T I d o e s n o t w a r r a n t o r r e p r e s e n t t h a t a n y l i c e n s e , e i t h e r e x p r e s s o r i m p l i e d , i s g r a n t e d u n d e r a n y T I p a t e n t r i g h t , c o p y r i g h t , m a s k w o r k r i g h t , o r o t h e r T I i n t e l l e c t u a l p r o p e r t y r i g h t r e l a t i n g t o a n y c o m b i n a t i o n , m a c h i n e , o r p r o c e s s i n w h i c h T I p r o d u c t s o r s e r v i c e s a r e u s e d . I n f o r m a t i o n p u b l i s h e d b y T I r e g a r d i n g t h i r d - p a r t y p r o d u c t s o r s e r v i c e s d o e s n o t c o n s t i t u t e a l i c e n s e f r o m T I t o u s e s u c h p r o d u c t s o r s e r v i c e s o r a w a r r a n t y o r e n d o r s e m e n t t h e r e o f . U s e o f s u c h i n f o r m a t i o n m a y r e q u i r e a l i c e n s e f r o m a t h i r d p a r t y u n d e r t h e p a t e n t s o r o t h e r i n t e l l e c t u a l p r o p e r t y o f t h e t h i r d p a r t y , o r a l i c e n s e f r o m T I u n d e r t h e p a t e n t s o r o t h e r i n t e l l e c t u a l p r o p e r t y o f T I .

    R e p r o d u c t i o n o f T I i n f o r m a t i o n i n T I d a t a b o o k s o r d a t a s h e e t s i s p e r m i s s i b l e o n l y i f r e p r o d u c t i o n i s w i t h o u t a l t e r a t i o n a n d i s a c c o m p a n i e d b y a l l a s s o c i a t e d w a r r a n t i e s , c o n d i t i o n s , l i m i t a t i o n s , a n d n o t i c e s . R e p r o d u c t i o n o f t h i s i n f o r m a t i o n w i t h a l t e r a t i o n i s a n u n f a i r a n d d e c e p t i v e b u s i n e s s p r a c t i c e . T I i s n o t r e s p o n s i b l e o r l i a b l e f o r s u c h a l t e r e d d o c u m e n t a t i o n . I n f o r m a t i o n o f t h i r d p a r t i e s m a y b e s u b j e c t t o a d d i t i o n a l r e s t r i c t i o n s .

    R e s a l e o f T I p r o d u c t s o r s e r v i c e s w i t h s t a t e m e n t s d i f f e r e n t f r o m o r b e y o n d t h e p a r a m e t e r s s t a t e d b y T I f o r t h a t p r o d u c t o r s e r v i c e v o i d s a l l

    e x p r e s s a n d a n y i m p l i e d w a r r a n t i e s f o r t h e a s s o c i a t e d T I p r o d u c t o r s e r v i c e a n d i s a n u n f a i r a n d d e c e p t i v e b u s i n e s s p r a c t i c e . T I i s n o t r e s p o n s i b l e o r l i a b l e f o r a n y s u c h s t a t e m e n t s .

    T I p r o d u c t s a r e n o t a u t h o r i z e d f o r u s e i n s a f e t y - c r i t i c a l a p p l i c a t i o n s ( s u c h a s l i f e s u p p o r t ) w h e r e a f a i l u r e o f t h e T I p r o d u c t w o u l d r e a s o n a b l y b e e x p e c t e d t o c a u s e s e v e r e p e r s o n a l i n j u r y o r d e a t h , u n l e s s o f f i c e r s o f t h e p a r t i e s h a v e e x e c u t e d a n a g r e e m e n t s p e c i f i c a l l y g o v e r n i n g s u c h u s e . B u y e r s r e p r e s e n t t h a t t h e y h a v e a l l n e c e s s a r y e x p e r t i s e i n t h e s a f e t y a n d r e g u l a t o r y r a m i f i c a t i o n s o f t h e i r a p p l i c a t i o n s , a n d a c k n o w l e d g e a n d a g r e e t h a t t h e y a r e s o l e l y r e s p o n s i b l e f o r a l l l e g a l , r e g u l a t o r y a n d s a f e t y - r e l a t e d r e q u i r e m e n t s c o n c e r n i n g t h e i r p r o d u c t s a n d a n y u s e o f T I p r o d u c t s i n s u c h s a f e t y - c r i t i c a l a p p l i c a t i o n s , n o t w i t h s t a n d i n g a n y a p p l i c a t i o n s - r e l a t e d i n f o r m a t i o n o r s u p p o r t t h a t m a y b e p r o v i d e d b y T I . F u r t h e r , B u y e r s m u s t f u l l y i n d e m n i f y T I a n d i t s r e p r e s e n t a t i v e s a g a i n s t a n y d a m a g e s a r i s i n g o u t o f t h e u s e o f T I p r o d u c t s i n s u c h s a f e t y - c r i t i c a l a p p l i c a t i o n s .

    T I p r o d u c t s a r e n e i t h e r d e s i g n e d n o r i n t e n d e d f o r u s e i n m i l i t a r y / a e r o s p a c e a p p l i c a t i o n s o r e n v i r o n m e n t s u n l e s s t h e T I p r o d u c t s a r e s p e c i f i c a l l y d e s i g n a t e d b y T I a s m i l i t a r y - g r a d e o r " e n h a n c e d p l a s t i c . " O n l y p r o d u c t s d e s i g n a t e d b y T I a s m i l i t a r y - g r a d e m e e t m i l i t a r y s p e c i f i c a t i o n s . B u y e r s a c k n o w l e d g e a n d a g r e e t h a t a n y s u c h u s e o f T I p r o d u c t s w h i c h T I h a s n o t d e s i g n a t e d a s m i l i t a r y - g r a d e i s s o l e l y a t t h e B u y e r ' s r i s k , a n d t h a t t h e y a r e s o l e l y r e s p o n s i b l e f o r c o m p l i a n c e w i t h a l l l e g a l a n d r e g u l a t o r y r e q u i r e m e n t s i n c o n n e c t i o n w i t h s u c h u s e .

    T I p r o d u c t s a r e n e i t h e r d e s i g n e d n o r i n t e n d e d f o r u s e i n a u t o m o t i v e a p p l i c a t i o n s o r e n v i r o n m e n t s u n l e s s t h e s p e c i f i c T I p r o d u c t s a r e d e s i g n a t e d b y T I a s c o m p l i a n t w i t h I S O / T S 1 6 9 4 9 r e q u i r e m e n t s . B u y e r s a c k n o w l e d g e a n d a g r e e t h a t , i f t h e y u s e a n y n o n - d e s i g n a t e d p r o d u c t s i n a u t o m o t i v e a p p l i c a t i o n s , T I w i l l n o t b e r e s p o n s i b l e f o r a n y f a i l u r e t o m e e t s u c h r e q u i r e m e n t s .

    F o l l o w i n g a r e U R L s w h e r e y o u c a n o b t a i n i n f o r m a t i o n o n o t h e r T e x a s I n s t r u m e n t s p r o d u c t s a n d a p p l i c a t i o n s o l u t i o n s :

    P r o d u c t s A p p l i c a t i o n s A m p l i f i e r s a m p l i f i e r . t i . c o m A u d i o w w w . t i . c o m / a u d i o D a t a C o n v e r t e r s d a t a c o n v e r t e r . t i . c o m A u t o m o t i v e w w w . t i . c o m / a u t o m o t i v e D L P P r o d u c t s w w w . d l p . c o m B r o a d b a n d w w w . t i . c o m / b r o a d b a n d D S P d s p . t i . c o m D i g i t a l C o n t r o l w w w . t i . c o m / d i g i t a l c o n t r o l C l o c k s a n d T i m e r s w w w . t i . c o m / c l o c k s M e d i c a l w w w . t i . c o m / m e d i c a l I n t e r f a c e i n t e r f a c e . t i . c o m M i l i t a r y w w w . t i . c o m / m i l i t a r y L o g i c l o g i c . t i . c o m O p t i c a l N e t w o r k i n g w w w . t i . c o m / o p t i c a l n e t w o r k P o w e r M g m t p o w e r . t i . c o m S e c u r i t y w w w . t i . c o m / s e c u r i t y M i c r o c o n t r o l l e r s m i c r o c o n t r o l l e r . t i . c o m T e l e p h o n y w w w . t i . c o m / t e l e p h o n y R F I D w w w . t i - r f i d . c o m V i d e o & I m a g i n g w w w . t i . c o m / v i d e o R F / I F a n d Z i g B e e S o l u t i o n s w w w . t i . c o m / l p r f W i r e l e s s w w w . t i . c o m / w i r e l e s s

    M a i l i n g A d d r e s s : T e x a s I n s t r u m e n t s , P o s t O f f i c e B o x 6 5 5 3 0 3 , D a l l a s , T e x a s 7 5 2 6 5 C o p y r i g h t 2 0 0 9 , T e x a s I n s t r u m e n t s I n c o r p o r a t e d

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