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By

07G21A0555

IV CSE-A

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A Non-volatile memory device under

development @ IBMs Alma den

research center. Based-on a Break through technology

called as Spintronics.

Manipulates the two types ofindependent electrons found in

electrical current -- called the "spin-up"

and "spin-down" electrons.

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Idea is to use a spin-coherent electric

current to move magnetic domains

(rather than to move Parts) along ananoscopic Permalloy wire.

A racetrack memory device is made up

of many such wires and read/write

elements.

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2 ways to arrange RT Memory.

Simplest is a series of flat wires arranged

in a grid with read and write headsarranged nearby.

But more widely studied arrangement

uses U-shaped wires arranged verticallyover a grid of read/write heads on an

underlying substrate.

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Offers performance on the order of 20-

32 ns to read or write a random bit.

Compares to about 3,000,000 ns for ahard drive, or 6-40 ns for conventional

DRAM.

With the use of a "reservoir," improving toabout 9.5 ns.

Throughput is on the order of 250-670

MBPS

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Boots-up Instantly

Can access information 100,000 times

more rapidly than a traditional HDD.

Uses just a few mill watts while, a

computer can consume up to 300mW of

electricity just sitting idle. Pack 100 times as much data into the

same area.

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More reliable than HDDs since it uses no

Mechanical parts, also no wearing of

parts. As fast as a DRAM, but Non-Volatile.

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Microscopic imperfections in the crystal

structure of the wires led to the magnetic

domains becoming stuck. Resulted in performance roughly equal

to traditional HDDs.

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Could replace all other forms of memory.

100,000 times faster .

Can have Devices which stores 500,000

songs or 3,500 full-length movies on one

mobile device.

Which would use considerably lesspower, that a single battery charge

could power a device for weeks rather

than days or hours.

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