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    SOLAR CELL

    TECHNOLOGY

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    Thin-film solar cells based on CIGS (Cu(In,Ga)Se2) absorbers are among theleading devices which are expected to lower the costs for photovoltaicenergy conversion. Other companies working with CIGS cells include ShellSolar and Wrth.

    Early Honda CIGS module prototypes had a maximum output of 112 W at

    dimensions of 1,367 802 46 mm. Honda is working to improve theefficiency.

    Hondas solar cells will likely sell for some 1.5 million yen each, 20%-30%less than silicon-made cells, according to the report.

    The new plant will initially have an annual capacity to produce about 30megawatts worth of solar cells, enough for 10,000 households a year.

    Initially, the company aims to market them only in Japan. But it will latersell them in overseas markets, eyeing mainly North America and Europe,where demand is expected to surge in the future.

    Honda is also considering a scheme that would use solar cells to power ahome electrolysis unit for the production of hydrogen for vehicle refueling.Hondas current prototype home hydrogen

    energy systems rely on natural gas reforming. Honda combined its CIGSsolar cells with a Honda-developed compact electrolysis unit that uses anew Ruthenium-based catalyst in a prototype at its Torrance, Californiafacility.

    The prototype solar-powered electrolysis unit produces hydrogen at a rateof 2 normal cubic meters per hour (Nm3/hr).

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    Doping Silicon

    You can change the behavior of silicon and turn it into aconductor by dopingit. In doping, you mix a small

    amount of an impurityinto the silicon crystal. There are two types of impurities:

    N-type- In N-type doping, phosphorusor arsenicisadded to the silicon in small quantities. Phosphorusand arsenic each have five outer electrons, so they'reout of place when they get into the silicon lattice. Thefifth electron has nothing to bond to, so it's free tomove around. It takes only a very small quantity of theimpurity to create enough free electrons to allow an

    electric current to flow through the silicon. N-typesilicon is a good conductor. Electrons have a negativecharge, hence the name N-type.

    http://www.webelements.com/webelements/scholar/elements/phosphorus/key.htmlhttp://www.webelements.com/webelements/scholar/elements/arsenic/key.htmlhttp://www.webelements.com/webelements/scholar/elements/arsenic/key.htmlhttp://www.webelements.com/webelements/scholar/elements/phosphorus/key.html
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    P-type- In P-type doping, boronor galliumis the dopant. Boron andgallium each have only three outer electrons. When mixed into thesilicon lattice, they form "holes" in the lattice where a siliconelectron has nothing to bond to. The absence of an electron createsthe effect of a positive charge, hence the name P-type. Holes canconduct current. A hole happily accepts an electron from aneighbor, moving the hole over a space. P-type silicon is a goodconductor.

    A minute amount of either N-type or P-type doping turns a siliconcrystal from a good insulator into a viable (but not great) conductor

    -- hence the name "semiconductor." N-type and P-type silicon are not that amazing by themselves; but

    when you put them together, you get some very interestingbehavior at the junction. That's what happens in a diode.

    A diodeis the simplest possible semiconductor device. A diodeallows current to flow in one direction but not the other. You may

    have seen turnstiles at a stadium or a subway station that letpeople go through in only one direction. A diode is a one-wayturnstile for electrons.

    When you put N-type and P-type silicon together as shown in thisdiagram, you get a very interesting phenomenon that gives a diodeits unique properties.

    http://www.webelements.com/webelements/scholar/elements/boron/key.htmlhttp://www.webelements.com/webelements/scholar/elements/gallium/key.htmlhttp://www.webelements.com/webelements/scholar/elements/gallium/key.htmlhttp://www.webelements.com/webelements/scholar/elements/boron/key.html
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