pn junction and mos structure - gonzaga...

PN Junction and MOS structure

Basic electrostatic equations

• We will use simple one-dimensional electrostatic equations to develop insight and basic understanding of how semiconductor devices operate

– Gauss's Law

– Potential Equation

– Poisson's Equation

It puts together Gauss's Lawand the potential equation

Gauss's Law

dE

dx

charge density [C/m3]

permittivity [F/m]

E = electric field [V/m]

x a

x

d E xxE x

aE x

a

xa

x

x dxS

x

charge per area in theinterval from x

a to x [C/m2]

The possibility of a change in permittivity due to a material interface has been accounted for by keeping the permittivity together with the field

Potential Equation

x xR

xR

x

E x dx

reference point

E xd x

dx

Poisson's Equation

• It directly links the potential with the charge distribution (there is no need to go through the field)

E xd

dx

dE

dx d2

x

dx2

dE x

dx

Boundary Conditions

• Electronic devices are made of layers of different materials

• We need conditions for and E at the boundary between two materials

Potential at a boundary

• An abrupt jump of (“along x”) would lead to an infinite electric field at the boundary

• Infinite electric fields are not possible (they would tear the material apart)

• Therefore (x) must be continuous:

E xd

dx

0 0

Where the boundary is located at x = 0

Electric Field at a boundary

• The electric field usually jumps at a boundary

• By letting 0 :

d E x 2 E x 1 E x x dx

2 E x 0 1 E x 0 0

x dx 0

2 E x 0 1 E x 0 S

x dx S

There can be a sheet of charge at the boundary

A sheet of charge is an Infinite amount of charge all distributed on the boundary surface (that is a Dirac function)

Boundary between materials

Boundary conditions

E x 01

2

E x 0

x dx 0

E x 01

2

E x 0S

2

x dx S

x 0 x 0

electric field jump for charge free boundary

electric field jump for charged boundary

continuity of potential at a boundary

Oxide-Silicon interface• Example of very common interface in microelectronic devices

Esi 0ox

si

Eox 0Eox 0

3.0

si 11.70

ox 3.90

08.85 10

12F m

Permittivity of vacuum

Metal–Metal Capacitor

• In many IC processes there are two or more levels of metal separated by silicon oxide


• Since there is no charge present in the oxide

– the electric field in the oxide is constant

• Since the electric field in the oxide is constant and the voltage drop across the gap is V

– it follows that:

Eox

metal

ox

Emetal

S

ox

Eox

V

t d

dE

dx

= 0

No electric field inside metals

t d 0

0

td

Eox dx

V 0 t d

V

t d

S

ox

S

d S

dV

ox

t d

Capacitance per unit area [F/m2]

Example

• Find potential, electric field and charge distribution for a metal-metal capacitor with t

d =1 μm and an applied

voltage of 1V

M-O-S Capacitor

M-O-S charge distribution

0q N

A

QB

charge per area in the substrate

(C/cm2)

B 0X d G

G ox Vox

t ox

VX d

ox V

t ox 0

ox V

tox q N A

M-O-S charge density profile

M-O-S Electric Field

• In the metal the electric field is 0

• In the oxide (–tox

< x < 0) the charge density is zero ( (x)=0),

therefore the electric field is constant

SOM

for tox x 0:dE x

dx

x

ox

0 E x Eox

The electric field is confined in the region – t

ox< x < X

d

NOTE: the total excess charge in the region – t

ox< x < X

d is zero

0


• Outside the charged region of the silicon (x > Xd) the electric field is 0

• In the charged region of the silicon (0 < x < Xd) the charge density is

constant (0) therefore the electric field is a linear function of x

SOM

dE x0

s

dx s E xd s E 00

0

X d

dx

0

E 00X d

s

NOTE: The electric field jumps only at the interface between two different materials


• The boundary condition at the oxide/silicon interface is:

SOM

ox Eox s E 0 Eox

s

ox

E 0 E ox

0X d

ox

3

Potential plot through M-O-S

M SO

Poisson ' s Equation :

d2

x

dx2

x

potential at the metal gate :

m tox

surface potential : s 0

substrate potential :sub

X d

Potential is continuos at boundaries:x = t

ox metal/oxide boundary

x = 0 oxide/silicon boundary

Vm sub

Vox

VB

drop across the oxide

drop across the chargedregion of the silicon

Surface potentialfor tox x 0:

m s

0

t ox

E ox dx Eox tox V ox

s m Eox tox m

0X d tox

ox

s m

B

ox

and V ox

B

ox

G

ox

Linear

The drop across the oxide is proportional to the charge stored on each side of the oxide

m xx

tox

Eox dx =

= Eox t ox xV ox

t ox

t ox x

=QG= Q

B

=1/Cox

x is negative inthe region considered

Potential drop across the substrate

for 0 x X d :

d2

x

dx2

0

s

>0

The potential is “concave up” in the charged region

charged region of silicon

V B 0 X d

1

2

0

s

X d

2 0X d

2 s

X d

B

2 s

X d

Quadratic

PN Junction in Thermal Equilibrium

• If no external stimulus is applied (zero applied voltage, no external light source, etc) the device will eventually reach a steady state status of thermal equilibrium

• In this state (“open circuit” and steady state condition) the current density must be zero:

• Eventually, the populations of electrons and holes are each in equilibrium and therefore must have zero current densities

J tot ,0 J p ,0 J n ,0 0

J p ,0 0

J n ,0 0

Diffusion Mechanism

NA > N

D

The charge on the two sides of thejunction must be equal (charge neutrality)

We assumed the n-side is the more lightly doped

Under “open circuit” and steady state conditions the built in electric field opposes the diffusion of free carriers until there is no net charge movement

Diffusion Current

• It’s a manifestation of thermal random motion of particles (statistical phenomenon)

• In a material where the concentration of particles is uniform the random motion balances out and no net movement result (drunk sail-man walk Brownian walks)

• If there is a difference (gradient) in concentration between two parts of a material, statistically there will be more particles crossing from the side of higher concentration to the side of lower concentration than in the reverse direction.

• Then we expect a net flux of particles

Diffusion Equations

I n Aqe

dn

dx

The more non uniform the concentration the larger the current

I n Dn Aqe

dn

dxDn A q

dn

dx

J n Dn qdn

dx

J p D p qdp

dx

I p D p Aqh

dn

dxD p Aq

dn

dx

Assuming the charge concentration decreases with increasing x It means that dn/dx and dp/dx are negative, so to conform with conventions we must put a – sign in front of the equations.

Proportionality Constants

charge in the cross section

Drift Current

vn n

E

v p p E

Eventually v saturates • too many collisions • effective electrons' mass increases

Mobility (proportionality constant)

I n vn W h n qeI

pv

pW h p q

h

charge per unit of volume

cross section area

volume travelled per unit of time

J n n E n qe n E n q

J p p E p qh p E p q

h

L

W

Drift and Diffusion currents

J n ,drift n E n qe n E n q

J p ,drift p E p qh p E p q

q qh qe 1.6 1019

C

J n ,diff Dn qe

dn

dxDn q

dn

dx

J p ,diff D p qh

dp

dxD p q

dp

dx

Built in Voltage

• At equilibrium: (drift and diffusion balance out)

• Let's consider the second equation:

J n J n ,drift J n , diff n E n q Dn qdn

dx0

J p J p ,drift J p ,diff p E p q D p qdp

dx0

p E p q Dp qdp

dx p

dV

dxp D p

dp

dx p p dV D p dp

p

V xn

V x p

dV D p

p xn

p x p

dp

pV x p V xn

Dp

p

lnp x p

p xn

xp x

n

Built in Voltage

0V xn V x p

D p

p

lnp x p

p xn0

KT

qln

N A N D

ni

2

Einstein ' s Relation :

D p

p

Dn

n

KT

qV T

Mass Action Law :

n p ni

2

ND

e.g.1017

ni

2N D

N A e.g.1018

ni

2N A

xn

xp

1018

1017

103

104

Since both μ and D aremanifestations of thermalrandom motion (i.e. statistical thermodynamics phenomena) they are not independent

If n then p A larger number of electrons causesthe recombination rate of electrons with holes to increase

Applying KVL to the PN junction in equilibrium

I0

R

P N

+ + +

+ + +

0

xp x

n

R

We cannot have current. Something is wrong !

Built in Voltage

P N

+ + +

+ + +

+

0

xp x

n

E

If a free electron in the P region or a hole in the N region somehow reach the edge of the depletion region get swept by the electric field ( drift)

pm mn

KVL at equilibrium:

pm+

mn+

0 = 0

Metal-semiconductorcontact potentials

• There are 4 charged particles in silicon, two mobiles (holes and electrons) and two fixed (ionized donors and ionized acceptors)

• The total positive change density and the total negative charge must be equal

Neutrality of charge

positive ions concentration

holes concentration

negative ions concentration

electrons concentration

N D p N A n

Depletion region in equilibrium

• The doping concentrations NA on the p side and N

D on the n side

are assumed constants

+q ND

q NA

x

(x)

xn

xp

x

E(x)

E(0)=Emax

= qNAx

p/

s= qN

Dx

n/

s

Positive and negative excess charge in the depletion region must balance out (neutrality of charge):

q ND x

n = q N

A x

p

Gauss ' Law :

dE x

dx

x

s

x q p n N D N A

the depletion regionis freeof

electrons and holes

N D N A n p

x q N D N A

on the P side N D 0 :

x q N A

on the N side N A 0:

x q N D

Depletion region in equilibrium x

nx

p x

E(x)

Emax

= qNAx

p/

s= qN

Dx

n/

s

(x)

x

1

2E max xn

1

2

q N D xn

2

s

AreaTriangle 0 Emax xn

1

2E max x p

1

2

q N A x p

2

s

Area Triangle 0 Emax x p

0

0

1

2

q N D

s

xn

2 1

2

q N A

s

x p

2

N D xn N A x p

xn

N A

N D

x p

x p

N D

N A

xn

Potential Equation :

d E x dx

Depletion region in equilibrium

xn

N A

N D

x p

x p

N D

N A

xn

0

1

2

q N D

s

xn

2 1

2

q N A

s

x p

2 1

2

q N D

s

X dep

2N A

N A N D

2

1

2

q N A

s

X dep

2N D

N A N D

2

1

2

q

s

X dep

N A N D

2

N D N A

2N A N D

2q X dep

2

2 s

N A N D

N A N D

X dep xn

xp

1N

A

ND

xp

1N

D

NA

xn

x p X dep

N D

N A N D

and xn X dep

N A

N A N D

Width and max field of the depletion region in equilibrium

X dep

2s

q

NA

ND

NAN

D

0

E max

q N A

s

x p

q N A

s

X dep

N D

N A N D

q

s

N A N D

N A N D

X dep

Emax

2q

s

N A N D

N A N D

0

with :0

KT

qln

N A N D

ni

2

Biased PN Junction

vjpm mn

v

P N

xE(x)

v=0v<0

v>0

v pm mnv j 0

0

v j 0v

+ -

Biased PN Junction

• if we keep decreasing the voltage eventually we'll break the material. For silicon the breakdown point is reached for an electric field of approx. 107 V/m.NOTE: the depletion region can't get bigger than the length of the bar !

• if we keep increasing the voltage the depletion region will disappear (v=0).

As v becomes comparable with 0 the PN junction behave like a sort of resistor (the

current is determined by the ohmic contacts and the resistance of the semiconductor)

X dep

2s

q

NA

ND

NAN

D

0v

0

KT

qln

N A N D

ni

2

Emax

2 q

s

NAN

D

NA

ND

0v

v

i

BV

0

Reverse Biased PN Junction• Under reverse bias the depletion

region becomes wider

• Then, it gets harder for the majority carriers to cross (diffuse through) the junction and easier for the minority carrier to be swept (drifted) across the junction

• Since there are only a FEW minority carriers, the current carried under reverse bias is negligible

E

E0

Reverse Biased PN JunctionNOTE:

As soon as a minority carrier, let's say an electron on the P side, is swept across the junction, on the N side it becomes a majority carrier. Every time a minority carrier on the P side is swept toward the N side it leaves one less minority carrier on the edge of the depletion region in the P region. The same is true for holes swept from the N side to the P side.

Under reverse bias the minority carrier concentration at the edges of the depletion regions is depleted below their equilibrium value. Since the number of minority carriers is small anyway this won't be a major difference

E

E0

Forward Biased PN Junction• Under forward bias the depletion

region shrinks

• Then, it gets easier for the majority carriers to cross (diffuse through) the junction and harder for the minority carrier to be swept (drifted) across the junction.

• Since there are a LOT of majority carriers we expect the current to be considerable

Forward Biased PN Junction

I/V characteristic of PN Junction

Idiode

q A Dn

Ln

ni

2

NA

q A D p

L p

ni

2

ND

e

V diode

V T1 I

se

V diode

V T1

I s

with :

A cross section area of the diode

ni

2

N D

holes' concentration in the N region (minority carriers)

ni

2

N A

electrons' concentration in the P region (minority carriers)

D p diffusion constant for the holes in the N region

L p diffusion lenght for the holes in the N region D p p

p average time it takes for a hole into the N region to recombine

with a majority electron

...

I/V characteristic of PN JunctionSince the only region where we have “net charge” is between -x

p and x

n

such region (a.k.a. space charge region) is the only one where there is electric field.

The regions from A to -xp and from x

n to K are quasi-neutral (it is like they

were perfect conductors and in perfect conductors there is no electric field inside)


The situation is similar to the one at equilibrium but now the “built in voltage” is

0 – V

diode instead of

0

Vdiode

gnd

-Xp

Xn

X0

pp

pn

np

nn

A K


P NIn the N region we have a lot of electronsthat will diffuse toward the P region

In the P region we have a lot of holesthat will diffuse toward the N region

• Under forward bias close to the depletion edges we have:

– a greater hole concentration than normal on the N side (minority carriers)

– a greater electrons concentration than normal on the P side (minority carriers)


Extending the result derived at equilibrium we can write the voltage across the space charge region (between -x

p and x

n) as:

V j V xn

V x p 0V

diodeV

Tln

p x p

p xn

VTln

n xn

n x p

0V diode

V T

lnp x p

p xn

0V diode

V T

lnn xn

n x p

p xn

p x p

e

0V

diode

VT

p x p

e

0

VT

e

Vdiode

VT

n xp

n xn

e

0V

diode

VT

n xn

e

0

VT

e

V diode

V T

I/V characteristic of PN Junction• And noting that:

– at the boundary of the quasi neutral P region at -Xp the hole density (majority carriers) is approximately equal at equilibrium as well as under bias,

– and the same is true for the electron density (majority carriers) at the

boundary of the quasi neutral N region (at Xn)

p x p

e

0

V T

p p0

e

0

V T

pn0

ni

2

ND

n xn

e

0

V T

nn0

e

0

V T

n p0

ni

2

NA

the concentration of the majority carriers in the quasi neutral regions is approximately the same as the concentration at equilibrium

I/V characteristic of PN Junction• Thus:

p xn

p x p

e

0V

diode

VT

p x p

e

0

VT

e

Vdiode

VT

n xp

n xn

e

0V

diode

VT

n xn

e

0

VT

e

V diode

V T

p xn

ni

2

ND

e

Vdiode

VT

n xp

ni

2

NA

e

V diode

V T

p x p

e

0

V T

p p0

e

0

V T

pn0

ni

2

ND

n xn

e

0

V T

nn0

e

0

V T

n p0

ni

2

NA


• If we consider the quasi neutral regions, since in the quasi neutral regions there is no field there will be no drift

• Then, the most suitable traverse sections for the evaluation of the total current I

diode are those at the boundary of the depletion layer (x=–x

p or x=x

n)

Idiode

In

I p I n ,drift I n , diff I p , drift I p , diff

I n I n , diff neutral regionW N

I p I p ,diff neutral regionW P

Idiode

In

xp

Ip

xp

I n.diff xp

I p ,diff xp

I/V characteristic of PN Junction If we make the simplifying assumption that the flow of the carriers in the

depletion region is approximately constant (in other words we assume the recombination in the depletion region is negligible)

The currents due to diffusing carriers moving away from the junction are given by the well know diffusion equations:

I p ,diff xp

I p ,diff xn

Idiode

I n.diff xp

I p ,diff xp

I n.diff xp

I p , diff xn

I n , diff x q A Dn

dnp

x

dx

I p ,diff x q A D p

dpn

x

dx

I/V characteristic of PN Junction• If we assume that the carriers distribution is linear (SHORT DIODE)

dn p x

dx

|

| x p

n p x p n p A

W p

n p0 e

Vdiode

VT

n p0

W p

n p0 e

Vdiode

VT

1

W p

dpn

x

dx

|

| xn

pn

xn

pn

K

Wn

pn0

e

Vdiode

VT p

n0

Wn

pn0

e

Vdiode

VT

1

Wn

PN Junction: I/V characteristic

• Recalling that:

dn p x p

dx

n p0 e

Vdiode

VT

1

W p

ni

2

NA

e

Vdiode

VT

1

dpn

xn

dx

pn0

e

V diode

V T

1

Wn

ni

2

ND

e

V diode

VT

1

n p0

ni

2

N A

(electrons are minority carriers in P)

pn0

ni

2

N D

(holes are minority carriers in N)

I n ,diff x p q A Dn

dn p x p

dxq An

i

2D

n

NAW p

e

Vdiode

VT

1

I p , diff xn

q A Dp

dpn

xn

dxq An

i

2D p

NDW

n

e

V diode

V T

1

PN Junction: I/V characteristic • And finally:

• In the case of a LONG DIODE the minority carriers will recombine before reaching the diode terminals

I n ,diff x p q Ani

2D

n

NAW p

e

Vdiode

VT

1

I p ,diff xn

q A ni

2D p

NDW

n

e

V diode

V T

1

I diode I n.diff x p I p ,diff x p q Ani

2Dn

N AW p

N D W n e

V diode

V T1

Is

Idiode

I n.diff x p I p ,diff x p q Ani

2D

n

NA

Ln

D p

ND

L p

e

V diode

V T1

PN Junction: I/V characteristic SHORT DIODE:

LONG DIODE:

Where Ln is a constant known as the diffusion length of electrons in

the P side and Lp is a constant known as the diffusion length for

holes in the N side. The constants Ln and L

p are dependent on the

doping concentrations NA and N

D respectively.

Idiode

I n.diff x p I p , diff x p q Ani

2D

n

NAW p

D p

NDW

n

e

V diode

V T1

Is

Idiode

I n.diff x p I p ,diff x p q Ani

2D

n

NA

Ln

D p

ND

L p

e

V diode

V T1

Is

Diode Capacitances

• Depletion Capacitance (= Junction Capacitance)

• Diffusion Capacitance

• Reverse Biased Diode

– Depletion Capacitance

• Forward Biased Diode

– Diffusion Capacitance + Depletion Capacitance

C j

Cd

Depletion Charge • The depletion region stores an immobile charge of equal amount

on each side of the junction ( it forms a capacitance !!)

qJ

qP

q NAx

pA q

Nq N

Dx

nA

x p X dep

N D

N A N D

and xn X dep

N A

N A N D

qJ

qN

AN

D

NA

ND

A X dep

X dep

2 s

q

N A N D

N A N D0 vD

qJ

vD

A 2qs

NA

ND

NA

ND

0v

D

The charge of the depletion region is a function of the voltage v

D applied to the diode

P side has “ ” ions

N side has “+” ions

The decision to take qJ negative is

totally arbitrary. (But it turns out tobe a good one if we prefer to work with positive capacitances)

Depletion Capacitance • Since the depletion charge does not change linearly with the applied

voltage the resulting capacitor is non linear !!

• An important physical consideration: we are dealing with a capacitor that no matter where I put the + of the applied voltage it always accumulate the positive charge on the N side of the junction, and the negative charge on the P side of the junction.

qJ

vD

A 2qs

NA

ND

NA

ND

0v

D

qJ

vD

0

Small Signal Depletion Capacitance • For small changes of the applied voltage about a specified DC

voltage VD we can derive an equivalent linear capacitor

approximation

qJ

vD

since qJ vs. D relationship is

non linear the capacitor is non linear

small “quantities”

Common conventions:v

DV

Dv

d

Vd

VD

vd

total “quantities”(applied)

DC “quantities”

D

qJ

0VD D

= VD +

d

QJ

d

qJ= Q

J + q

j

slopeq

j

dqJ

dvD

|V

D

vd

slope

qJ

vD

qJ

VD

dqJ

dvD

|V

D

vD

VD

Small Signal Depletion Capacitance

C j C j VD

dqJ

dvD

|V

D

d

dvD

A 2 qs

NA

ND

NA

ND

0v

D

1 2

VD

A 2 qs

NA

ND

NA

ND

1 2

d

dvD

0v

D

1 2

VD

A 2qs

NA

ND

NA

ND

1 2

1

20

vD

1 2

VD

Aq

s

2

NA

ND

NA

ND

1 2

0V

D

1 2A

2

qs

NA

ND

NA

ND

0V

D

1 2

A

2

qs

NA

ND

NA

ND

0V

D

A

2

qs

NA

ND

NA

ND

01

VD

0

= Cj0


C j C j VD

q j

vd

dqJ

dvD

|V

D

C j0

1V

D

0

As

X dep ,0 1V

D

0

As

X dep

Zero Bias Capacitance = junction capacitance in thermal equilibrium (V

D=0)

C j0 C j VD

0A

2

qs

NA

ND

NA

ND

0

As

X dep ,0

X dep ,0

2 s

q

N A N D

N A N D0 s

2

q s

N A N D

N A N D0

Small Signal Depletion Capacitance:Physical Interpretation

C j

q j

vd

As

X dep

Capacitance of a parallel plate capacitor with its plates separated by the depletion width X

dep(V

D) at the particular DC voltage V

D.

The charges separated by Xdep

are the small signal charge layers ±qj.

For vd 0, the small signal charges become sheets that are separated by a gap width of exactly Xdep

Physical Interpretation

C j

q j

vd

As

X dep

Capacitance of a parallel plate capacitor with its plates separated by the depletion width X

dep(V

D) at the particular DC voltage V

D. The charges

separated by Xdep

are the small signal charge layers ±qj. For vd 0, the

small signal charges become sheets that are separated by a gap width of Xdep


• In the practice the depletion capacitance is usually provided per cross-section area:

j0 j VD

0s

X dep ,0

1

2

qs

NA

ND

NA

ND

0

j j VD

dqJ

dvD

|V

D

s

X dep

s

X dep ,0 1V

D

0

j0

1V

D

0

NOTE: when the diode is forward biased with vD = 0

the equation for Cj “blows up” (i.e., is equal to infinity).

As vD approaches 0 the assumption that the depletion

region is free of charged carriers is no longer true.

Graded Junctions

• All the equations derived for the depletion capacitance are based on the assumption that the doping concentration change abruptly at the junction. Although this is a good approximation for many integrated circuits is not always true.

• More in general:

• Mj is a constant called grading coefficient and its value ranges from 1/3 to depending on the way the concentration changes from the P to the N side of the junction

j

j0

1V

D

0

M j

Large Signal Depletion Capacitance

• The equations for the depletion capacitance given before are valid only for small changes in the applied voltage

• It is extremely difficult and time consuming to accurately take this non linear capacitance into account when calculating the time to charge or discharge a junction over a large voltage change

• A commonly used approximation is to calculate the charge stored in the junction for the two extreme values of applied voltage, and then through the use of Q = C V, calculate the average capacitance accordingly

j av

V2

V1

V2

V1

The approximation ispessimistic

Large Signal Depletion Capacitance

j av

V2

V1

V2

V1

20 j0

1V

2

0

1V

1

0

V2

V1

V 2 qs

NA

ND

NA

ND

0V 2 q

s

NA

ND

NA

ND

01

V

0

20 j0 1

V

0

j0

qs

20

NA

ND

NA

ND

qs

NA

ND

NA

ND

j0 20

Example

Find a rough approximation for the junction capacitance to be used to estimate the charging time of a reverse biased junction from 0V to 5V (or vice versa). Assume

0 0.9 V

j av2

0 j0

1V

2

0

1V

1

0

V2

V1

2 0.9 j0

15

0.91

5 0

j0

2

0V

5V

VD

pn junction and mos structure - gonzaga...

Documents