nmdc 2018 program guide v4-webieee nmdc 2018 program guide 3 sponsors & exhibitors sponsors ieee...

IEEE 13th Nanotechnology Materials & Devices Conference

NMDC 2018

Conference Program

Portland, Oregon October 14-17, 2018

IEEE NMDC 2018 Program Guide 2

Embassy Suites Floorplans


Sponsors & Exhibitors

SPONSORS

IEEE Nanotechnology Council

The IEEE Nanotechnology Council (NTC) is a multi-disciplinary group whose purpose is to advance and coordinate work in the field of Nanotechnology carried out throughout the IEEE in scientific, literary and educational areas. The Council supports the theory, design, and development of nanotechnology and its scientific, engineering, and industrial applications.

IEEE Transactions on Nanotechnology

The IEEE Transactions on Nanotechnology (TNANO) publishes novel and important results in engineering at the nanoscale. The scope of TNANO includes the physical basis and engineering applications of phenomena at the nanoscale level across all areas of science and engineering. TNANO publishes Regular Papers, and Correspondence Items. It focuses on

nanoscale devices, systems, materials and applications, and on their underlying science. The “Letters” in TNANO publishes a collection of peer-reviewed short reports of original research and perspectives and mini-reviews on emerging topics.

EXHIBITORS

© 2018, IEEE


Welcome from the Conference Chair

Welcome to Portland, and welcome to IEEE’s 13th Nanomaterials & Devices Conference (NMDC 2018). The IEEE Nanotechnology Council (NTC) is the primary sponsor of the conference, which rotates on a 3-year cycle between IEEE Regions 1-7 & 9 (North & South America,) Region 8 (Europe & Africa,) and Region 10 (Asia & Pacific.) NMDC 2019 will be held next October in Stockholm. See me if you want to host NMDC 2020 in Asia. If you pre-registered, you should have already downloaded the Proceedings, consisting of a soft copy of this Preliminary Program and all the papers. If not, please check at the Registration Desk for the on-line location and password. There is a hotel reception each night at 5.30-7.30pm. It didn’t make sense for the conference to duplicate these, so these also serve as conference receptions. But note that while they are included in the room rate for hotel guests, there is a $25 charge for others, payable at the hotel reception desk. A conference like this takes a lot of effort by many people, and I need to acknowledge the efforts of the whole crew here. The three committees are recognized elsewhere in this program book, specifically the International Advisory Committee, the Conference Committee itself, and the Program Committee. I must emphasize the extraordinary dedication and time commitments beyond expectation of some individuals on these committees, but cannot find the right place to draw that line …... but you know who you are! The sponsors and exhibitors are also recognized elsewhere. Their contributions have reduced the cost of the conference to all other attendees, so please say “Thank you” when you visit the exhibitor tables! As a final word, please stay a little longer and take advantage of your opportunity while here in Portland and Oregon to sample the many treats which are available to visitors. If your interests incline to the outdoors, there is scenery awaiting, along with hiking, canoeing, seaside activities on the coast, high desert adventure to the East, wine tasting throughout the Willamette Valley and South, fishing on the Columbia, and more. If you are more interested in the urban life, there are fine restaurants, art galleries, and funky shops (including Powell’s Bookstore) in the city known as the home of microbreweries and alternative music. Again, welcome and enjoy …. both the conference and our city.

Jim Morris, General Conference Chair Professor Emeritus of Electrical & Computer Engineering, Portland State University NTC President-Elect 2019


Welcome from the Program Chair

It is my great pleasure to welcome all of you to the 2018 IEEE NMDC in Portland Oregon. I hope the technical program of the conference will be both enjoyable and informative.

I want to first thank the Track co-chairs, Special session chairs, Award co-chairs, and TPC members for their hard work in creating a high quality technical program. The very demanding process of reviewing and evaluating submitted papers requires the efforts of countless reviewers and we are very grateful to them for their willingness to help. The technical program would not be possible without your involvement. Above all, we are grateful to the authors who chose 2018 NMDC to present their research and submit their papers. The conference would not be possible without you.

The 2018 NMDC technical program presents 6 plenary talks: from academia, industry and a national laboratory. Each conference day starts with two plenary talks on topics ranging from nanoscale III-V electronics, nanowire FETs, new emerging devices and materials for energy-efficient computing, through properties of 2D materials and their applications to Near-Zero-Index photonics and Perovskites.

Monday evening, the Panel on Nanotechnology Education will feature two invited, 30-minute talks, followed by panelists responding to a set of questions on the topic. The Panel will conclude with a 30-minute Q&A session with audience participation. The first invited talk discusses public engagement in nanotechnology, in particular the right balance between emphasizing the potential of emerging technologies and cautioning against over-optimistic claims. The second talk discusses the ethics in Nano Education and of Nano Education.

Invited and contributing papers are presented in seven special sessions, twenty-nine regular sessions, and an interactive presentation session. Forty-six invited speakers will present their research developments in special and regular sessions. Two professional development workshops on navigating career pathways and effective negotiation will be offered at two evening sessions.

We hope each of you will find something interesting and exciting in the busy technical program we have put together.

I extend to every one of you a warm welcome to Portland and look forward to seeing you soon in the Rose City.

Malgorzata Chrzanowska-Jeske

Technical Program Chair

am Chair


ORGANIZING COMMITTEE

Role Name Affiliation

General Chair James E. Morris Portland State University [NTC* Finance VP]

Program Chair Malgorzata Chrzanowska-Jeske Portland State University [NTC* Technical VP 2016-17]

Treasurer Lee Oien IEEE Oregon Section Publications Chair Ed Perkins IEEE Oregon Section

[NTC* Secretary] Registration Chair John Acken Portland State University Sponsorships & Exhibits Chair

Catherine Tran Intel Corporation

Sponsorships & Exhibits Committee

Zhiqiang (Tony) Chen Portland State University

Santosh Kurinec Rochester Institute of Technology Huamin Li SUNY University at Buffalo Marilyn Mackiewicz Portland State University Lee Oien

Publicity Chair Megumi Kawasaki Oregon State University Local Arrangements Chair

Marilyn R Mackiewicz Portland State University

Volunteer Coordinator Catherine Tran Intel Corporation Website Ed Perkins

* IEEE Nanotechnology Council


PROGRAM COMMITTEE

Technical Program Chair Malgorzata Chrzanowska-Jeske Portland State University, Ore. USA

Assistant to Technical Program Chair Satya Keerthi Vendra Portland State University, Ore. USA

Award Committee Chair Xiaoning Jiang North Carolina State University, NC, USA

Co-Chair Georgios Sirakoulis Democritus University of Thrace (DUTH), Greece

Committee Members Antonio Di Bartolomeo Universita' degli Studi di Salerno, Italy

Vihar Georgiev University of Glasgow, Scotland, UK

Kremena Makasheva CNRS, LAPLACE Laboratory, France

Special Session Co-chairs Antonio Di Bartolomeo Universita' degli Studi di Salerno, Italy

Martin N. Wybourne Dartmouth College, USA

Track Chairs

1.0 Materials & Devices Carmen Lilly University of Illinois at Chicago, IL, USA

Jianying He Norwegian University of Science and Technology, Trondheim, Norway

2.0 Properties, Fabrication & Applications Steve Tung University of Arkansas, AR, USA

Wei Wu University of Southern California,

3.0 Special Applications Guangyong Li University of Pittsburgh, PA, USA

4.0 Nanotechnology, Nanostructures & Nanosystems

Markondeya R (Raj) Pulugurtha Georgia Tech, GA, USA

Tuo-Hung Hou National Chiao Tung University, Taiwan

5.0 Modeling & Simulation of Nano-devices & Nano-structures

Vihar Georgiev University of Glasgow, Scotland, UK

6.0 Emerging topics in nano-materials, -devices and –structures

Kremena Makasheva CNRS, LAPLACE Laboratory, France

Georgios Sirakoulis Democritus University of Thrace (DUTH), Greece

7.0 Education in nanotechnology Peter Moeck Portland State University, Portland, OR, USA


INTERNATIONAL ADVISORY COMMITTEE

Ex-officio

Qing Zhang Nanyang Technological University (Chair) Singapore

Jim Morris Portland State University (NMDC 2018 Chair, ex officio)

Oregon, USA

Guangyong Li University of Pittsburgh (NTC Conferences VP, ex officio)

USA

Jan Linnros Royal institute of Technology (KTH) (NMDC 2019 Chair)

Stockholm, Sweden

Jin-Woo Kim University of Arkansas (NTC Publications VP, ex officio)

USA

Fabrizio Lombardi Northeastern University (EiC TNANO, ex officio) Boston, USA

Sorin Cotofano Delft University of Technology (AEiC TNANO, ex officio)

Netherlands

John Yeow University of Waterloo (EiC Nanotechnology Magazine, ex officio)

Canada

Members

Knut Aasmundtveit University College of Southeast Norway Norway

Sivaram Arepalli Rice University Houston, USA

Chris Bailey University of Greenwich London UK

Alexander Balandin University of California Riverside

Paul Bergstrom Michigan Technological University Houghton, USA

Sanjukta Bhanja University of South Florida USA

Simon Brown University of Canterbury New Zealand

Peter Burke University of California Irvine, USA

Marc Cahay University of Cincinnati Ohio, USA

Jose Delgado-Frias Washington State University Pullman, USA

Daniela Dragoman University of Bucharest Romania

Mircea Dragoman National Research and Development Institute in Microtechnology

Bucharest, Romania

Jan Felba Wroclaw University of Technology Poland

Stephen Fonash Pennsylvania State University State College, USA

Toshio Fukuda Nagoya University Japan

Wei Gao University of Auckland New Zealand

Bonnie Gray Simon Fraser University Canada

Kris Iniewski Redlen Technologies/ETCMOS Vancouver, Canada

Chennupata Jagadish Australian National University Canberra

Karol Kalna Swansea University Wales, UK


Gerhard Klimeck nanoHUB; Purdue University West Lafayette IN, USA

Jing Kong Massachusetts Institue of Technology Cambridge, USA

Santosh Kurinec Rochester Institute of Technology New York, USA

Wen J. Li City University of Hong Kong Hong Kong

Johan Liu Chalmers University Sweden

Lianqing Liu Shenyang Institute of Automation China

Sergei Lyshevski Rochester Institute of Technology New York, USA

Antonio Maffucci University of Cassino and Southern Lazio Cassino, Italy

Kremena Makasheva University of Toulouse France

Meyya Meyyappan NASA USA

Brad Nelson Swiss Federal Institute of Technology Zurich

Kyung-Wook Paik Korea Institute of Advanced Science and Technology

Korea

Eric Polizzi University of Massachusetts Amherst, USA

Shalini Prasad University of Texas Dallas, USA

Vittorio Privitera CNR (National Research Council) Catania Italy

Ricardo Reis Universidade Federal do Rio Grande do Sul Porto Alegre, Brazil

Gordon Reuven University of Victoria Canada

Clara Santato Montreal Polytechnic Canada

Muhammad Hassan Sayyad

GIK Institute of Engineering Sciences and Technology

Pakistan

Jun-ichi Shirakashi Tokyo University of Agriculture and Technology Japan

Mircea Stan University of Virginia Charlottesville, USA

Vladimir Stavrov AMG Technology Ltd. Bulgaria

Earl Swartzlander University of Texas Austin, USA

Joe Trodahl Victoria University of Wellington New Zealand

Rao Tummala Georgia Institute of Technology USA

Yonhua (Tommy) Tzeng

National Cheng Kung University Taiwan

Olaf van der Sluis Eindhoven University of Technology The Netherlands

Sten Vollebregt Delft University of Technology The Netherlands

Zuobin Wang Chungchun University of Science & Technology China

Klaus-Juergen Wolter Dresden University of Technology Germany

Ching-Ping Wong Chinese University of Hong Kong & Georgia Institute of Technology

USA

Wei Xue Rowan University New Jersey, USA


PROGRAM AT-A-GLANCE

Time Sunday

October 14th Monday

October 15th Tuesday

October 16th Wednesday October 17th

7.00-8.00am Breakfast (Hotel) Breakfast (Hotel) Breakfast (Hotel)

8.00-8.20 Opening /

Introductions Opening /

Introductions Opening /

Introductions

8.20-9.10 Plenary Plenary Plenary

9.10-10.00 Plenary Plenary Plenary

10.00-10.30 Break Break Break

10.30-12.10 Session 1 (4x) Session 1 (4x) Session 1 (4x)

12.10-12.30pm Break Break Break

12.30-1.30 Lunch Lunch Lunch

1.30-3.00 Session 2 (4x) Session 2 (4x) Session 2 (4x)

3.00-3.30 Break Break Break

3.30-5.10 Session 3 (4x)

Session 3 (4x) Session 3 (4x)

5.10-5.30 Break Break

5.30-7.00 Welcome

Reception (Hotel) Reception (Hotel) Reception (Hotel)

Reception (Hotel) PSU Lab Tours

7.00-8.30 pm Workshop:

Career Panel Nanotechnology Education WW Panel discussion

7.30-9.30 pm

Workshop: Negotiation Banquet & Awards

(PSU Smith) 7.30--10.00 pm

8.30-10.00 pm

NOTE: Breakfast included for hotel guests;

Breaks on Mezzanine Level;

Lunch is in Arcadian Garden on Lower Level;

Reception in Arcadian Garden, complementary for hotel guests, $25 for others,

buy ticket at front desk.

Wednesday Banquet at PSU Smith Memorial Student Union Building.


PLENARY SPEAKERS PRESENTATION SCHEDULE

Monday October 15th

8:20 am

Jesus del Alamo Massachusetts Institute of Technology

Nanoscale III-V Electronics: InGaAs FinFETs and Vertical Nanowire

MOSFETs

9:10 am Ian A. Young

Intel Corporation Beyond CMOS Materials and Devices for Energy Efficient Computing

Tuesday October 16th

8:20 am Kaustav Banerjee UC Santa Barbara

2D Materials for Smart Life

9:10 am

Joseph M. Luther National Renewable Energy Laboratory

Metal Halide Perovskites at the Nanoscale: high quality optoelectronic

materials with unique phase properties

Wednesday October 17th

8:20 am Nadar Engheta, Nanotechnology Council Pioneer Award Winner

University of Pennsylvania Near-Zero-Index Photonic Materials and Devices

9:10 am Tony F. Heinz

Stanford University Optical properties of 2D materials and heterostructures

SPECIAL EVENTS SCHEDULE

Sunday, October 14th

5:30 - 7:00 pm

SR: Welcome Reception Room: Arcadian Garden

7:00 - 8:30 pm

W1: Career Panel Navigating career pathways in Academia and Industry

Room: Fireside

Monday, October 15th

5:30 - 7:00 pm

MR: Reception Room: Arcadian Garden

7:30 - 9:30 pm

P1-M4: Panel Session - Nanotechnology Education Worldwide Room: Fireside

Tuesday, October 16th

5:30 - 7:00 pm

TR: Reception Room: Arcadian Garden

7:00 - 8:30 pm

W2: Professional Workshop - The "art" of Effective Negotiation: "Just ask for it" Room: Fireside

Wednesday, October 17th

5:30 - 7:00 pm

WR: Reception Room: Arcadian Garden

5:30 - 7:00 pm

Tour PSU Labs: Physics (Guides: Raj Solanki, Erik Sanchez)

CEMN (guides: Tony Chen, Greg Baty) Engineering (Guide: Jun Jiao).

7:30 - 10:00 pm

BQ: Awards Banquet Room: PSU Smith Memorial Student Union Ballroom (3rd floor)


PROGRAM – MONDAY

Plenary Speaker

Monday October 15th, 8:20 – 9.10 am

Jesus del Alamo Massachusetts Institute of Technology

Jesus del Alamo Director of the Microsystems Technology Laboratories Donner Professor and Professor of Electrical Engineering Department of Electrical Engineering and computer Science Massachusetts Institute of Technology Cambridge, MA, USA

“Nanoscale III-V Electronics: InGaAs FinFETs and Vertical Nanowire MOSFETs”

Jesús A. del Alamo, Xin Zhao, Wenjie Lu, Alon Vardi and Xiaowei Cai Microsystems Technology Laboratories, Massachusetts Institute of Technology

Abstract:

In the last few years, as Si electronics faces mounting difficulties to maintain its historical scaling path, III-V compound semiconductors, in particular InGaAs, have received a great deal of attention. Sub-10 nm CMOS applications require a 3D transistor geometry. In this regard, the vertical nanowire (VNW) MOSFET represents the ultimate scalable transistor. The gate-all-around nanowire configuration allows for the greatest degree of charge control in the channel. The vertical transport direction uncouples footprint scaling (on the plane of the wafer) from gate length scaling (normal to the wafer) leading to the best possible combination of transistor density and short-channel effects.

At MIT, we are investigating vertical nanowire InGaAs MOSFETs and FinFETs fabricated by a top-down approach. Towards this goal, we have developed Reactive Ion Etching technology for In-containing III-V compounds that yields high aspect ratio structures with vertical and smooth sidewalls. We have also perfected digital etch to controllably thin down fins and vertical nanowires to below 10 nm width/diameter. Using these technologies, we have demonstrated InGaAs VNW MOSFETs and FinFETs with sub-10 nm critical dimensions. In both families of transistors, we have obtained promising electrical characteristics. This talk will review these recent developments, put them in context of the overall progress of Si CMOS and outline the prospects and challenges of III-V transistors for future nanoscale logic.

Speaker Biography:

Jesús A. del Alamo is the Director of the Microsystems Technology Laboratories at Massachusetts Institute of Technology. He obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid and MS and PhD degrees in Electrical Engineering from Stanford University. From 1985 to 1988 he was with NTT LSI Laboratories in Atsugi (Japan) and since 1988 he has been with the Department of Electrical Engineering and Computer Science of MIT where he currently is the Donner Professor. His current research interests are centered on nanoelectronics based on compound semiconductors for future logic, communications and power management applications. Prof. del Alamo was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the IEEE and the APS. He has received the Intel Outstanding Researcher Award, the SRC Technical Excellence Award, and the IEEE EDS Education Award.


PROGRAM – MONDAY

Plenary Speaker

Monday October 15th, 9:10 – 10.00 am

Ian Young Intel Corporation

Ian A. Young Intel Senior Fellow, Technology and Manufacturing Group Director, Exploratory Integrated Circuits, Intel Corporation, Hillsboro, Oregon, USA

“Beyond CMOS Materials and Devices for Energy Efficient Computing”

Abstract:

An analysis of research in quantum materials for beyond CMOS devices (nanoelectronic and/or nanomagnetic) is presented. Some device proposals and demonstrations are reviewed and trends in this field are identified. Considerations guiding development of competitive computing technologies are described. Results of beyond-CMOS circuit benchmarking are reviewed.

Speaker Biography:

Ian Young is a Senior Fellow and director of Exploratory Integrated Circuits in the Technology and Manufacturing Group of Intel Corporation. He joined Intel in 1983 and his technical contributions have been in the design of DRAMs, SRAMs, microprocessor circuit design, Phase Locked Loops and microprocessor clocking, mixed-signal circuits for microprocessor high speed I/O links, RF CMOS circuits for wireless transceivers, and research for chip to chip optical I/O. He has also contributed to the definition and development of Intel’s process technologies. He now leads a research group exploring the future options for the integrated circuit in the beyond CMOS era.

Ian Young received the Bachelor of Electrical Engineering and the Master Eng. Science, from the University of Melbourne, Australia. He received the PhD in Electrical Engineering from the University of California, Berkeley. He is the recipient of the 2009 International Solid-State Circuits Conference’s Jack Raper Award for Outstanding Technology Directions paper. He received the 2018 IEEE Frederik Philips Award “for leadership in research and development on circuits and processes for the evolution of microprocessors”. Ian Young is a Fellow of the IEEE.


PROGRAM – MONDAY

PLENARY SPEAKER

Monday October 15th, 8:20 – 9.10am Jesus del Alamo, Massachusetts Institute of Technology

Nanoscale III-V Electronics: InGaAs FinFETs and Vertical Nanowire MOSFETs

Time Track 1 - Queen Marie Track 2 Fireside

10:30 am-12:10 pm

T1-M1: Materials and Devices I

**Advanced Nanoscale Magnetic Tunnel

Junctions for Low Power Computing

Effect of Dy3+ Substitution on Structural Magnetic and Dielectric Properties of BiFeO3-

PbTiO3 Multiferroics

Effect of Zn Doping on Structural and

Ferroelectric Properties of GaFeO3 for

Futuristic Spintronic Applications

Magnetic Characterization of Cobalt Selenide and Nickel Selenide Thin Films

T2-M1: Properties / Fabrication I

**Graphene Foam Based Biochemical Sensors and

Energy Harvesting Devices

Synthesis and Characterization of VO2 on III Nitride Thin Films Using Low Pressure Chemical Vapor

Deposition for Sensing Applications

Silicon Nanowire-Based Biosensors for Low

Concentration Detection of Salmonella and

Escherichia Coli in Complex Mixtures

**Silicon Nanotechnology for Biomolecule Sensing

01:30 pm-03:00 pm

T1-M2: Materials and Devices II

**2-Dimensional Materials a Journey Across

Flatland

Study of the Filtering and Noise Properties of a Series of Tunnel Barriers in a Graphene Ribbon

TDDFT Studies on Sheet Size-Dependency of

Optoelectronic Properties of 2D Silicon

Investigation of Electrostatic Gating in Two-Dimensional Transitional Metal Dichalcogenides

(TMDC) Field Effect Transistors (FETs)

T2-M2: Properties / Fabrication II

**Technological Aspects of Silver Nanoparticles

Sintering for Electronic Packaging

Ultrasound Thrombolysis with Magnetic Microbubbles Under a Rotational Magnetic Field

High-Photoresponsivity MoS2 / CdSe Quantum Dots

Hybrid Phototransistor with Enhanced Photoresponse

Speed

High-conductance Two-Dimensional 1T'-MoTe2 Synthesized by Sputtering

03:30 pm-05:30 pm

T1-M3: Materials and Devices III

**A Unified Numerical Solver for Modeling

Metastability and Reliability of CdTe Solar Cells

Solid Additive Incorporated Active Layer for High Efficiency Polymer Solar Cells

Electronic Structure and Carrier Transport

Analysis in β-Ga2O3 Using a Two-Valley

Ensemble Monte Carlo Framework

TDDFT Investigation of the Hybrid Organic Inorganic Perovskite: CH3NH3PbCl3

**Solution-processed Perovskite

Optoelectronics

T2-M3: Properties / Fabrication III

**Nanostructures for Enabling Implantable

Bioelectronic Systems

Ab-initio Calculation of Nonlinear Optical Susceptibilities in Germanium Quantum Dots

Fabrication, Characterization and Investigation of

Novel PVDF/ZnO and PVDF-TrFE/ZnO

Nanocomposites with Enhanced Β-Phase and

Dielectricity

Polymer-Nanocrystal Nanocomposite Capacitors and Their Applications in Energy Storage

**Biosourced Electroactive Materials Towards Green

Electronics 07:30 pm-09:30 pm

P1-M4: Panel Session - Nanotechnology Education Worldwide - Queen Marie

NOTE: Breaks: 10.00-10.30, 3.00-3.30; Lunch: 12.20-1.20; Reception: 5.30-7.30 pm


PROGRAM – MONDAY

PLENARY SPEAKER Monday October 15th, 9:10 – 10.00 am

Ian A. Young, Intel Corporation Beyond CMOS Materials and Devices for Energy Efficient Computing

Time Track 3 - Gevurz Track 4 - Colonel Lindbergh

10:30 am-12:10 pm

T3-M1: Special Applications I

**Some Considerations Regarding the Modeling

and Characterization of Bulk CMOS Devices for

High-Frequency Applications

SPICE-Compatible Modeling of Silicene Field Effect Transistor and Analog Circuit Design

A Quasi-Analytic Behavioral Model for the Single-

electron Transistor for Hybrid MOS/SET Circuit

Simulation

T4-M1: Nanotech Education

**Nanotech/Science Education at a Research

University

Preparing 3D Print Files for Nano-Tech Education from Entries of Large Open-Access Crystallographic

Databases at Dedicated Websites

Graphene as a Reducing Agent for Electroless

Plating of Metal

**Reshaping a Nanotechnology Undergraduate Program

01:30 pm-03:00 pm

T3-M2: Special Applications II

**Polymer Nanocomposites for Flexible and

Wearable Fluidic and Biomedical Microdevices

Nanodevices and the Internet of Bio-Nano Things for Detecting and Measuring Anomalous

Electrodynamics of Ca^2+ in Pancreatic beta-Cells

The Usage of Classical Electrodynamics to

Characterize Bacteria Population Inside of an

Internet of Bio-Nano Things Nanonetwork

**Nanomechanics of Metal Coated Polymer Particles

T4-M2: Special Session I

**Recent Progress in High-Thermal Conductivity

Materials Research

Phonon Dynamics in Disordered Nanostructures: A Chaos Perspective

Extrinsic and Collective Effects on Thermal

Transport in 2D/3D Alloys and Nanostructures

Transport Simulations in Hierarchically Disordered Nanostructures for Thermoelectric Material Design

03:30 pm-05:30 pm

T3-M3: Modeling & Simulation I

**Carbon Nanotubes Directly Integrated in CMOS

by Local Synthesis - Towards a Wafer-Level

Process

Lattice Thermal Conductivity Reduction Due to Diffusive Boundary Scattering in Nanowires

Transversely Isotropic Elastic Properties of

Vacancy Defected Boron Nitride Nanotubes Using

Molecular Dynamics Simulations

Direct Electrical and Mechanical Characterization of Carbon Nanofibers Turf Using a Probe Card and

Nanoindentation

**Materials and Devices for Wearable Healthcare

from the Skin to Below the Skin

T4-M3: Special Session II

**Self-Heating in Devices Based on 2D and Phase-

Change Materials

Self-Heating in SOI MOSFETs at the 45 nm Node

Multi-scale Approach to Modeling Nanoscale SOI

Heater-Sensor Thermometer

Thermal Management in 3D IC Designs for Nano-CMOS Technologies: Analysis on Graphene- Vs.

Graphite-based TIM

07:30 pm-09:30 pm P1-M4: Panel Session - Nanotechnology Education Worldwide - Queen Marie



PROGRAM – TUESDAY Plenary Speaker

Tuesday October 16th. 8:20 – 9:10 am

Kaustav Banerjee

Professor, Electrical and Computer Engineering Nanoelectronics Research Lab, UC Santa Barbara

“2D Materials for Smart Life”

Abstract:

Two-dimensional (2D) materials such as graphene and various transition metal dichalcogenides (such as MoS2) possess a wide range of remarkable properties that make them attractive for a number of applications, including sub-10 nm VLSI. I will highlight the prospects of 2D materials for innovating energy-efficient transistors, sensors, interconnects and passive devices targeted for next-generation electronics needed to support the emerging paradigm of the Internet of Things (IoT). More specifically, I will bring forward a few applications uniquely enabled by 2D materials and their heterostructures that have been demonstrated in my lab for realizing ultra-energy-efficient electronics. This will include the world’s first Kinetic Inductor that exploits a low-dimensional material property of graphene to overcome a 200 years old limitation of the conventional Faraday-inductor and opens up a new pathway for designing ultra-compact IoT systems (Nature Electronics 2018), a 2D-channel band-to-band tunneling transistor that overcomes a fundamental power consumption challenge in all electronic devices since the invention of the first transistor (Nature 2015), the first 2D FET based biosensor with unprecedented sensitivity (ACS Nano 2014), as well as a breakthrough interconnect technology based on doped-graphene-nanoribbons, which overcomes the fundamental limitations of conventional metals and provides an attractive pathway toward an energy-efficient and highly reliable interconnect technology for next-generation integrated circuits (Nano Letters 2017). I will also discuss the prospects of monolithic 3D integration with 2D materials for realizing 3D ICs of ultimate thinness and integration density.

Speaker Biography:

Professor Kaustav Banerjee from UC Santa Barbara is one of the world’s leading innovators in the field of nanoelectronics. His current research focuses on the physics, technology, and applications of van der Waals materials and heterostructures for next-generation electronics, photonics, and bioelectronics. Initially trained as a physicist, he graduated from UC Berkeley with a PhD in electrical engineering in 1999. Professor Banerjee is a Fellow of IEEE, American Physical Society (APS), Japan Society for the Promotion of Science (JSPS), and the American Association for the Advancement of Science (AAAS). Professor Banerjee’s contributions to energy-efficient electronics, including seminal work on interconnects, 3D ICs, and thermal-aware VLSI design, have been recognized by the IEEE with a Technical Field Award (2015 Kiyo Tomiyasu Award), one of the institute’s highest honors, as well as the prestigious Bessel Prize in 2011 from the Humboldt Foundation.


PROGRAM – TUESDAY Plenary Speaker

Tuesday October 16th. 9:10 – 10:00 am

Joseph M. Luther Senior Scientist, National Renewable Energy Laboratory, Golden, CO, USA. “Metal Halide Perovskites at the Nanoscale: high quality optoelectronic

materials with unique phase properties”

Abstract:

The newly rediscovered perovskite semiconductor system has the potential to be extremely transformative for all optoelectronic devices, especially photovoltaics (PVs). Perovskite semiconductors of the form APbI3 where A is a large +1 charged cation, typically Cs, methylammonium, or formamidinium have had a huge resurgence among materials scientists for outstanding PV properties despite being overlooked for decades. Semiconductors containing the latter two A-site cations listed are hybrid organic-inorganic materials, and as such, are far less understood compared to conventional all inorganic or even organic material systems. Regardless of this spotty formal understanding, lead-halide perovskites have very rapidly been optimized to power conversion efficiency levels on par with all other materials even with extensive history of research. Perovskites show a unique tolerance to crystalline defects that cause trouble in most other semiconductors. Therefore the potential offered is that very high efficiency PVs can be fabricated in extremely fast and inexpensive ways, thus offering a revolution for the solar industry and a direct route toward producing the world’s energy with a simple and clean technology. Long-term durability of the devices is the critical remaining challenge to be solved.1 Two examples of major instabilities in device performance are the volatility of the organic cation and the specific crystal habit in which the material embodies.

Nanoscale versions (often termed quantum dots (QDs)) of the all-inorganic metal halide perovskite (CsPbI3) tend to retain the desired cubic phase due to strain effects at the surface of the QDs whereas conventional films of the same material “relax” to an orthorhombic structure at room temperature. Therefore these QDs potentially solve both of the instability issues. The cubic CsPbI3 QD cells operate with a rather remarkable open-circuit voltage of >1.2 volts and have produced power conversion efficiencies over 13%.2,3 This customizable new nanomaterial system has incredible potential for many applications in optoelectronics, including photovoltaics, LEDs, displays and lasers. We describe the formation of α-CsPbI3 QD films with long range electronic transport that retain the high temperature phase in ambient conditions making up the active layer in optoelectronic devices. Perspectives on how this technology can become transformative will be discussed.

Speaker Biography:

Joseph Luther is a senior scientist at the National Renewable Energy Laboratory in Golden, CO, USA. He received his PhD in Physics from Colorado School of Mines in 2008 for his work on colloidal PbS and PbSe quantum dot solar cells for multiple exciton generation, where one photon can generate multiple electron hole pairs, thus leading to solar cells that can outperform the existing SQ limit of 32%. After postdoctoral training at UC Berkeley under mentor Paul Alivisatos, he rejoined NREL in 2009. He published over 80 peer-reviewed papers regarding solution processed solar cells. Current research focuses on perovskite solar cells and semiconductor nanocrystals.


PROGRAM – TUESDAY

PLENARY SPEAKER Tuesday October 16th, 8:20 – 9:10 am Kaustav Banerjee, UC Santa Barbara

2D Materials for Smart Life

Time Track 1 - Queen Marie Track 2 - Fireside 10:00 am-05:00 pm

PS: Interactive Presentations Mezzanine Level

10:30 am-12:10 pm

T1-T1: Materials and Devices IV

**Nanomaterial Based Pressure Sensor for

Sphygmographic Pulse Pattern Analysis

Impact of Substrate Bias Polarity on Performance of Complementary Symmetric Lateral Bipolar on

SiGe-OI Inverter

Super Nonlinear Mixed Ionic Electronic

Conducting Thin-film Selector for Crosspoint

Array

Polymer-based Soft Topographical Features Functionalized by Magnetron Sputtering

T2-T1: Properties / Fabrication IV

**Graphene for Nanoelectronics - Novel Non Local

Spin Valve Design to Reveal Graphene's Spintronic

Properties

A Study of Field Effect on In-Plane Graphene Structure for RF Application

Characterization of Graphene Conductance Using a

Microwave Cavity

Engineering the Modal Shape of Graphene Nanoelectromechanical Systems Using Focused Ion

Beam Milling

01:30 pm-03:00 pm

T1-T2: Materials and Devices V

**Molecular Monolayer Doping for Forming

Ultra Shallow Junctions in Silicon

Multiple-Junction Single-Electron Charging in Electromigrated Series-Connected Nanogaps

Operating at Room Temperature

Single-Electron Tunneling Effects in

Electromigrated Coulomb Island Between Au

Nanogaps

Feedback Controlled Break Junction in Au-Ag-Au Nanowires

T2-T2: Nanotech / Nanostructures II

**Nano-acoustics: Materials Devices and

Applications

Nanotechnology-Enabled Additively-Manufactured RF and Millimeter-wave Electronics

Atomic Layer Deposition of 2-Dimensional

Semiconducting SnSe Thin Films

Nanoparticle Composites as Functional Materials for Novel Devices: Chemical Sensing and Optoelectronic

Applications

03:30 pm-05:00 pm

T1-T3: Materials and Devices VI

**Subnanometer Plasmonics: Quantum Regime

Functional Metasurfaces and the Plasmonic

Coulomb Blockade

Effect of Plasmonic Absorption on Photoacoustic Signal Generation

Plasmon Enhanced Dual Band Upconverters

Plasmonic Absorption Enabled Analyte Detection Using Piezotransistive Microcantilevers

T2-T3: Nanotech / Nanostructures III

**Power and Reliability Challenges in IoT

Nanoelectronics

Self Aligning Growth of Nanoparticle-Based Interconnects

Through-Silicon Via-Aware Layout Design and Power

Estimation in Sub-45 Nanometer 3D CMOS IC

Technologies

Magnetic Field Dependence of Non-Reciprocal Propagation of Millimeter-Waves Through Arrays of

Ferromagnetic Nanowires

07:00 pm-08:30 pm

W2: Professional Workshop - Fireside The “art” of Effective Negotiation: “Just ask for it”



PROGRAM – TUESDAY

PLENARY SPEAKER Tuesday October 16th, 9:10 – 10:00 am

Joseph M. Luther, National Renewable Energy Laboratory Metal Halide Perovskites at the Nanoscale: high quality optoelectronic materials with unique

phase properties


10:00 am-05:00 pm

PS: Interactive Presentations Mezzanine Level

10:30 am-12:10 pm

T3-T1: Nanotech / Nanostructures I

**'Protein-adsorption Problem' Revealed by

Using Plasma Deposited AgNPs-based

Nanocomposites

Sensing Characteristic Enhancement of Oxygen Plasma Treated Graphene

Characterizing Mutant Protein Activators Using

Single Molecule Optical Trapping

**Applications of Nano-electronics in Electrophysiology and Mitochondrial Biology

T4-T1: Special Session III

**Current/voltage Fluctuations in Nanodevices: From

Thermal and Shot Noise to Quantum Optics

The Role of Noise in Determining Selective Ionic Conduction Through Nano-Pores

Modeling Techniques for Electronic Noise and

Process Variability in Nanoscale Devices

Study of the Signal to Noise Ratio of a Double-Dot Magnetic Detector

01:30 pm-03:00 pm

T3-T2: Modeling & Simulation II

**Back to the Future How FinFETs and 3DIC are

Making It Difficult for Emerging

Nanotechnologies

Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN

Double Channel HEMT

A Multi-Scale Simulation Study of the Strained Si

Nanowire FETs

The Impact of Dislocation on bulk-Si FinFET Technologies: Physical Modeling of Strain

Relaxation and Enhancement by Dislocation

T4-T2: Special Session IV

**A Guided Safari Through the Properties of over

1000 2D Materials Revealed by Data Mining

Techniques

Layer-number-dependent Light-Matter Interaction on 2D Monolayer and Multilayer HfSe2

Using Ions to Control Transport in Two-Dimensional

Materials for Ion-Controlled Electronics

Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal

Dichalcogenide Transistors

03:30 pm-05:00 pm

T3-T3: Modeling & Simulation III

**Pseudo-memcapacitive Neuro-transistor Based

Capacitive Neural Network

Effects of uniaxial strain on gate capacitance and threshold voltage of double gate junctionless

transistor

Parametric Optimization of Self-Switching Diode

A Highly Efficient Bilayer graphene-HgCdTe Heterojunction Based P+-N Photodetector for

Long Wavelength Infrared (LWIR)

T4-T3: Special Session V

**2D Semiconductor and Van Der Waals

Heterostructure Devices and Systems

Edge Effects in Graphene Nanodevices

Electronic Characteristics of MoSe2 and MoTe2 for

Nanoelectronics Applications

Characterization and Simulation of Permittivity Enhancements of SiO2/Si3N4 Nanolaminate Layers

07:00 pm-08:30 pm

W2: Professional Workshop - Fireside The “art” of Effective Negotiation: “Just ask for it”



PROGRAM – WEDNESDAY Plenary Speaker

Wednesday October 17th, 8:20 – 9:10 am

Nader Engheta 2018 Nanotechnology Council Pioneer Award Winner H. Nedwill Ramsey Professor of Electrical and Systems Engineering and Professor of Physics and Astronomy University of Pennsylvania Philadelphia, Pennsylvania, USA

“Near-Zero-Index Photonic Materials and Devicesc Abstract:

Metamaterials and metasurfaces have enabled scientists and technologists with unique tools to tailor and manipulate waves in unconventional ways, providing novel platforms with unprecedented wave physics and engineering for photonic materials, optical devices and components. One such platform is the near-zero-index photonics. In such media, the effective relative permittivity and/or relative permeability is engineered to be very low (i.e. near zero) at the operating frequency, which leads to the near-zero effective refractive index. As a result, in such epsilon-near-zero (ENZ), mu-near-zero (MNZ), and/or near-zero-index (NZI) structures the wavelength is “stretched”, and consequently the phase distribution is effectively uniform throughout the structure’s volume. A variety of unique phenomena including supercoupling, photonic doping, electric levitation, extreme quantum optics, thermal beaming, and giant nonlinearity is exhibited in such platforms. In this talk, I will present an overview of some of our results in these areas, and will discuss some of their potential applications.

Speaker Biography:

Nader Engheta is the H. Nedwill Ramsey Professor at the University of Pennsylvania in Philadelphia, with affiliations in the Departments of Electrical and Systems Engineering, Bioengineering, Materials Science and Engineering, and Physics and Astronomy. He received his B.S. degree from the University of Tehran and his M.S and Ph.D. degrees from Caltech. His current research activities span a broad range of areas including photonics, metamaterials, nano-optics, graphene optics, electrodynamics, imaging and sensing inspired by eyes of animal species, microwave and optical antennas, and physics and engineering of fields and waves. He has received several awards for his research including the 2017 William Streifer Scientific Achievement Award from the IEEE Photonics Society, the 2015 Gold Medal from SPIE, the 2015 Fellow of US National Academy of Inventors (NAI),

the 2014 Balthasar van der Pol Gold Medal from the International Union of Radio Science (URSI), the 2017

Beacon of Photonics Industry Award from the Photonics Media, the 2015 Vannevar Bush Faculty Fellowship

Award from US Department of Defense, the 2012 IEEE Electromagnetics Award, the 2015 IEEE Antennas and

Propagation Society Distinguished Achievement Award, the 2015 Wheatstone Lecture in King’s College London,

the 2013 Inaugural SINA Award in Engineering, 2006 Scientific American Magazine 50 Leaders in Science and

Technology, the Guggenheim Fellowship, and the IEEE Third Millennium Medal. He is a Fellow of seven international scientific and technical organizations, i.e., IEEE, OSA, APS, MRS, SPIE, URSI, and American Association for the Advancement of Science (AAAS).He has received the honorary doctoral degrees from the Aalto University in Finland in 2016, the University of Stuttgart, Germany in 2016, and Ukraine’s National Technical University Kharkov Polytechnic Institute in 2017.


PROGRAM – WEDNESDAY Plenary Speaker

Wednesday October 17th, 9:10 – 10:00 am

Tony F. Heinz

Stanford University

Tony F. Heinz

Professor of Applied Physics and Photon Science at Stanford University, Stanford, CA USA Associate Laboratory Director for Energy Sciences at the SLAC National Accelerator Laboratory.

“Optical properties of 2D materials and heterostructures”

Speaker Biography:

Tony Heinz is a Professor of Applied Physics and Photon Science at Stanford University and the Associate Laboratory Director for Energy Sciences at the SLAC National Accelerator Laboratory. Heinz received a BS degree in Physics from Stanford University and a PhD degree, also in Physics, from UC Berkeley in 1982. He was subsequently at the IBM Research Division in Yorktown Heights, NY until he joined Columbia University in 1995 as a Professor of Electrical Engineering and Physics. At Columbia, he served as a Scientific Director of the Columbia Nanoscale Science and Engineering Center (NSEC) and of the Energy Frontier Research Center (EFRC). He was the President of the Optical Society of America in 2012. Heinz joined Stanford in 2015.

Heinz’s research has centered on the elucidation of the properties and dynamics of nanoscale materials primarily through the application of optical and laser techniques. His research on surfaces, interfaces, and nanoscale materials, including carbon nanotubes, graphene and other 2D materials, has been recognized by Optics Prize of the International Commission for Optics, a Research Award of the von Humboldt Foundation, the Julius Springer Prize for Applied Physics, and the Isakson Prize of the American Physical Society.


PROGRAM – WEDNESDAY

PLENARY SPEAKER Wednesday October 17th, 8:20 – 9:10 am

Nadar Engheta Nanotechnology Council Pioneer Award Winner University of Pennsylvania

Near-Zero-Index Photonic Materials and Devices

Time Track 1 - Queen Marie Track 2 - Fireside

10:30 am-12:10 pm

T1-W1: Materials and Devices VII

**Conduction Current and Displacement Current

Created in One Generator

Functionalization of PDMS Nanocomposite Foams for Piezoelectric Applications

Piezotransistive GaN Microcantilever Based NO2

Sensing Using Functionalized Nanoscale Thin

Films

Lorentz Based Metamaterials for Nonlinear Generation

T2-W1: Properties / Fabrication V

**Persistent Photoconductivity, Hysteresis and Field

Emission in MoS2 Back-Gate Field-Effect Transistors

Application of Mono Layered Graphene Field Effect Transistors for Gamma Radiation Detection

Nanoscale Fabrication of Microwave Detectors from

Commercially-Available CVD-Grown Monolayer

Graphene

Methodology for Analysis of Electrical Breakdown in Micrometer Gaps in Tip-To-Plane Configuration

01:30 pm-03:00 pm

T1-W2: Materials and Devices VIII

**Carbon Nanotechnology for Lithium Ion

Battery

Cathode Material Composed of Manganese Cobalt Hexacyanoferrate Nanoparticles for Aqueous Zinc Ion Intercalation Batteries

Valence Band Anti-Crossing Analysis of Dilute

Sulfur in ZnO1-xSx Alloys

Multiple Energy Harvesting Applications Based on Piezoelectricity and TriboelectricityMulti-mode Integrated Energy Harvestor Utilizing

Piezoelectricity and Triboelectricity

T2-W2: Emerging I

**TEM Investigations for Nanomaterials Properties

Information Theory Approach to Crystallographic Symmetry Classifications of Noisy 2D Periodic Images

The First Principle Simulation Study on the Specific

Grain Boundary Resistivity in Copper Interconnects

Deterministic Oxidation of Hafnium Diselenide Field- Effect-Transistors

03:30 pm-05:00 pm

T1-W3: Materials and Devices IX

**Atomic Engineering of Gallium Nitride

Semiconductors for Ultraviolet-to-Terahertz

Photonics

Highly Sensitive Ion Detection with Graphene/Si Schottky Junction Sensors

Dual Band Graphene Based Metamaterial

Absorber for Terahertz Applications

**Plasmonic Enhanced Terahertz Devices

T2-W3: Properties / Fabrication VI

**On Energy Effective Graphene Based Boolean Gates

An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing

Design and Fabrication of Graphene Flakes-Based

Microdevices for Detecting Heavy Metal Ions

Effect of Surface Adsorbates on Carrier Transport in Graphene

**Growth and Characterization of Semiconducting

Carbon Nanotubes for Nanoelectronics

05:30 pm-07:00 pm

WR: Reception Arcadian Garden (LL2) PSU Tours (PSU)



PROGRAM – WEDNESDAY

PLENARY SPEAKER Wednesday October 17th, 9:10 – 10:00 am

Tony F. Heinz, Stanford University Optical properties of 2D materials and heterostructures


10:30 am-12:10 pm

T3-W1: Modeling & Simulation IV

**Nonequilibrium Electron and Phonon

Dynamics in Advanced Photovoltaic Devices

Assessing Probe Damage in Constant Frequency and Frequency-Modulation Shear-force Acoustic

Near-field Microscopy

Optical Measurement of Thermal Vibration

Spectra to Determine Young's Modulus of Glass

Microfibers

Controlling Localized Photoemission of Triangular Gold Antennas Through Polarization

T4-W1: Special Session VI

**Interfaces and Defects in 2D Materials

The Effect of Environmental Contamination on the Intrinsic Surface Properties of 2D Materials

Van Der Waals Interactions and Graphene from Ultra-

Long Ranged Attraction to Ultra-Strong Screening

Effect of Catalyst Morphology and Composition on the Formation of Graphene at Reduced Temperatures via

Chemical Vapor Deposition

01:30 pm-03:00 pm

T3-W2: Modeling & Simulation V

**Electronic and Thermoelectric Transport in 2-

Dimensional Materials and Heterostructures

Quantum Mechanical Study of Impact of Surface Roughness on Electron Transport in Ultra-Thin

Body Silicon FETs

Modeling and Simulation of Novel Ferroelectric

Gate Stack in MOSFET for Enhanced Device

Performance

Role of Interfacial and Intrinsic Coulomb Impurities in Monolayer MoS2 FET

T4-W2: Special Session VII

**Characterization of the Electrical Behaviour of Thin

Dielectric Films at Nanoscale Using Methods Derived

from Atomic Force Microscopy: Application to Plasma

Deposited AgNPs-based Nanocomposites

New Insights into Dielectric Nanocomposites by EFM Imaging and Spectroscopy

Suspended Graphene Membranes for Strain Sensor

Applications

Impact of Particles Surface Functionalization on Interphase Properties of PI/Si3N4 Nanocomposites

Using AFM

03:30 pm-05:00 pm

T3-W3: Emerging II

**Future and Emergent Materials and Devices

for Resistive Switching

Potential High-Speed Switching Nano-Device with Sub-Nanometer Gaps

Growth of Horizontally Suspended Multi-Walled

Carbon Nanotubes for In-Situ Fabrication of

Solar Devices

Modeling of Gate Effects on Electron Transport in a Single-Electron Transistor with Two

Semiconducting Islands Between Two Semiconducting Electrodes

T4-W3: Modeling & Simulation V

**Fully Analytical Memristor Models: Advantages and

Applications

Response of a Memristive Biomembrane and Demonstration of Potential Use in Online Learning

Adaptive Batch Training Rule-Based Detection Scheme

for On-OFF-Keying Diffusion-Based Molecular

Communications

Heat Diodes Made of Quantum-Dot Nanowires

05:30 pm-07:00 pm

WR: Reception Arcadian Garden (LL2) PSU Tours (PSU)



PROGRAM – INTERACTIVE PRESENTATIONS

Tuesday, October 16 10:00 - 5:00 Chair: Satya Keerthi Vendra (Portland State University, USA)

1. Trapping Individual Upconverters Using Rectangle Nanoapertures

Amirhossein Alizadehkhaledi, Adarsh Lalitha Ravindranath, Adriaan L. Frencken, Ali Khademi, Mirali Seyed Shariatdoust, Frank C J M van Veggel and Reuven Gordon (University of Victoria, Canada)

2. A PCB Based Chemiresistive Carbon Dioxide Sensor Operating at Room Temperature Under

Different Relative Humidity Souvik Bag (Indian Institute of Technology Roorkee, India); Kaushik Pal (Indian Institute of Technology (IIT) Roorkee, Roorkee, Uttarakhand, India)

3. Device Design and Photovoltaic Performance of Heterojunction Solar Cells Using Ultra-Thin

Bi2S3 Photoabsorber Sandip Das, Samuel McWhorter and Erik Riefe (Kennesaw State University, USA)

4. Structural Study of MgO Barrier Layer in Magnetic Devices for Computing

Arifa Hoque and Sanjukta Bhanja (University of South Florida, USA)

5. Geometric Property Estimation Based on Raman Spetra Measurement Using Machine

Learning Michael K Jo (Rose-Hulman Institute of Technology, USA); Umberto Ravaioli (University of Illinois at Urbana-Champaign, USA)

6. Design of 8-Bit Reconfigurable ALU Using Quantum Dot Cellular Automata

Pandiammal K (Jerusalem College Of Engineering Chennai, India); Meganathan D (Anna University, India)

7. Observation of Nonlinear Oscillations in Piezotransistive GaN Microcantilevers

Goutam Koley, Ferhat Bayram, Durga Gajula and Digangana Khan (Clemson University, USA)

8. Fab-free, High Throughput Thin Metal Film Fabrication Method Using Reductive Metal Ion

Ink Coating for Diverse Plasmonic and Electronic Applications Jae Hyuk Lee, Jeong Dae Kim, Kangeun Yoo, Won Seok Lee, Min Cheol Kim, Daehun Kang, Ju-Hyoung Han, Jong Won Hur, Donghyun Park and Hyun Soo Chun (Seoul National University of Science and Technology, Korea); Hongseok Youn (HanBat University, Korea); Jong G. Ok (Seoul National University of Science and Technology, Korea)

9. Effects of Environmental Factors on the Stability of Silver Nanowire Transparent Electrodes

Chiao-Chi Lin, Dong-Xuan Lin and Jing-Tang Jhan (Feng Chia University, Taiwan)

10. Screen Printed, Flexible, All Metal-Oxide Capacitors for Printed Electronics Jack McGhee (Loughborough University, United Kingdom (Great Britain))


Program – Interactive Presentations

Tuesday, October 16 10:00 - 5:00

11. Synopsis of Multiphysics Deep Sub-Micron Failure Rate Modeling Technique for CFR and

EOL Prediction Mark Musil (Portland State University & IRT Saint-Exupery, France); Alain Bensoussan (IRT Saint Exupery, Toulouse & Thales Alenia Space, France); Joseph Bernstein (Ariel University, Israel); Fabio Coccetti (IRT Saint-Exupery, France)

12. Modeling the Detection of Anomalous Flux of Proteins in the Human Kidney with the

Diffusion's Equation and the Prospective Deployment of Nanodevices to Anticipate Diabetes

Kidney Disease Huber Nieto-Chaupis (Universidad de Ciencias y Humanidades & Center of Research eHealth, Peru)

13. Subnanometer Gaps for Enhanced Raman Substrates

Eradzh Rakhmatov, Bruno Guilherme da Fonseca, Ali Khademi, Alexandre Brolo and Reuven Gordon (University of Victoria, Canada)

14. Effects of White Noise Excitation on Tristable Piezoelectric Energy Harvesters with

Asymmetric Potential Wells Subramanian Ramakrishnan, Md Raf E Ul Shougat and Prasanth Sukumar (University of Minnesota Duluth, USA)

15. The Hysteresis Phenomenon and Q Factor Enhancement in Nonlinear NEMS Resonators

Driven by Levy Stable Stochastic Processes Md Raf E Ul Shougat and Subramanian Ramakrishnan (University of Minnesota Duluth, USA)


Invited Speakers Presentation Schedule

Speaker Topic Session

ID Session Time

Knut Aasmundtveit

Carbon Nanotubes Directly Integrated in CMOS by Local Synthesis - Towards a Wafer-Level Process

T3-M3 10/15 15:30

Zlatan Aksamija Electronic and Thermoelectric Transport in 2-Dimensional Materials and Heterostructures

T3-W2 10/17 13:30

Antonio Di Bartolomeo

Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors

T2-W1 10/17 10:30

Matthias Batzill Interfaces and Defects in 2D Materials T4-W1 10/17 10:30

Can Bayram Atomic Engineering of Gallium Nitride Semiconductors for Ultraviolet-to-Terahertz Photonics

T1-W3 10/17 15:30

Peter Burke Applications of Nano-electronics in Electrophysiology and Mitochondrial Biology

T3-T1 10/16 10:30

Sorin Cotofana On Energy Effective Graphene Based Boolean Gates T2-W3 10/17 15:30

Liang Dong Graphene Foam Based Biochemical Sensors and Energy Harvesting Devices

T2-M1 10/15 10:30

Jan Felba Technological Aspects of Silver Nanoparticles Sintering for Electronic Packaging

T2-M2 10/15 13:30

Philip Feng 2D Semiconductor and Van Der Waals Heterostructure Devices and Systems

T4-T3 10/16 15:30

Stephen Goodnick

Nonequilibrium Electron and Phonon Dynamics in Advanced Photovoltaic Devices

T3-W1 10/17 10:30

Reuven Gordon Subnanometer Plasmonics: Quantum Regime Functional Metasurfaces and the Plasmonic Coulomb Blockade

T1-T3 10/16 15:30

Bonnie Gray Polymer Nanocomposites for Flexible and Wearable Fluidic and Biomedical Microdevices

T3-M2 10/15 13:30

Mona Jarrahi Plasmonic Enhanced Terahertz Devices T1-W3 10/17 15:30

Kaili Jiang Growth and Characterization of Semiconducting Carbon Nanotubes for Nanoelectronics

T2-W3 10/17 15:30

Xiaoning Jiang Nano-acoustics: Materials Devices and Applications T2-T2 10/16 13:30

Jun Jiao A Strategic Approach for Low Temperature Graphene Growth Towards Direct Device Integration

T2-T1 10/16 10:30

Richard Jones Between Promise Fear and Disillusion Two Decades of Public Engagement Around Nanotechnology

P1-M4 10/15 19:30

Milo Koretsky Reshaping a Nanotechnology Undergraduate Program T4-M1 10/15 10:30

Santosh Kurinec Molecular Monolayer Doping for Forming Ultra Shallow Junctions in Silicon

T1-T2 10/16 13:30

Wen Li Nanomaterial Based Pressure Sensor for Sphygmographic Pulse Pattern Analysis

T1-T1 10/16 10:30

Lih Lin Solution-processed Perovskite Optoelectronics T1-M3 10/15 15:30

Jan Linnros Silicon Nanotechnology for Biomolecule Sensing T2-M1 10/15 10:30

Kremena Makasheva

'Protein-adsorption Problem' Revealed by Using Plasma Deposited AgNPs-based Nanocomposites

T3-T1 10/16 10:30

Cyrus Mody Ethics in Nano Education, but First the Ethics of Nano Education

P1-M4 10/15 19:30

Peter Moeck Nanotech/Science Education at a Research University T4-M1 10/15 10:30


Speaker Topic Session

ID Session Time

Roberto Murphy Some Considerations Regarding the Modeling and Characterization of Bulk CMOS Devices for High-Frequency Applications

T3-M1 10/15 10:30

Eric Pop Self-Heating in Devices Based on 2D and Phase-Change Materials

T4-M3 10/15 15:30

Raj Pulugurtha Nanostructures for Enabling Implantable Bioelectronic Systems T2-M3 10/15 15:30

Evan Reed A Guided Safari Through the Properties of over 1000 2D Materials Revealed by Data Mining Techniques

T4-T2 10/16 13:30

Ricardo Reis Power and Reliability Challenges in IoT Nanoelectronics T2-T3 10/16 15:30

Bertrand Reulet Current/voltage Fluctuations in Nanodevices: From Thermal and Shot Noise to Quantum Optics

T4-T1 10/16 10:30

Clara Santato Biosourced Electroactive Materials Towards Green Electronics T2-M3 10/15 15:30

Arturo Sarmiento Fully Analytical Memristor Models: Advantages and Applications

T4-W3 10/17 15:30

Li Shi Recent Progress in High-Thermal Conductivity Materials Research

T4-M2 10/15 13:30

Georgios Sirakoulis

Future and Emergent Materials and Devices for Resistive Switching

T3-W3 10/17 15:30

Raj Solanki 2-Dimensional Materials a Journey Across Flatland T1-M2 10/15 13:30

Mircea Stan Back to the Future How FinFETs and 3DIC are Making It Difficult for Emerging Nanotechnologies

T3-T2 10/16 13:30

Yonhua Tzeng Carbon Nanotechnology for Lithium Ion Battery T1-W2 10/17 13:30

Dragica Vasileska

A Unified Numerical Solver for Modeling Metastability and Reliability of CdTe Solar Cells

T1-M3 10/15 15:30

Christina Villeneuve-Faure

Characterization of the Electrical Behaviour of Thin Dielectric Films at Nanoscale Using Methods Derived from Atomic Force Microscopy: Application to Plasma Deposited AgNPs-based Nanocomposites

T4-W2 10/17 13:30

Zhaohao Wang Advanced Nanoscale Magnetic Tunnel Junctions for Low Power Computing

T1-M1 10/15 10:30

Zhongrui Wang Pseudo-memcapacitive Neuro-transistor Based Capacitive Neural Network

T3-T3 10/16 15:30

Benedicte Warot-Fonrose

TEM Investigations for Nanomaterials Properties T2-W2 10/17 13:30

Sheng Xu Materials and Devices for Wearable Healthcare from the Skin to Below the Skin

T3-M3 10/15 15:30

Qing Zhang Conduction Current and Displacement Current Created in One Generator

T1-W1 10/17 10:30

NOTE: Invited talks are 30 minutes & are identified in the session schedules by **


W1: Career Panel: Navigating career pathways in Academia and Industry

Sunday, October 14, 7:00-8:30 pm, Fireside Room

Organizer: Marilyn Rampersad Mackiewicz, PSU Moderator: Jim Tung Panelists:

• Manoranjan Acharya (Intel)

• Erik Sanchez (Portland State University, Professor of Physics)

• Johanna Schwartz (Klarquist Sparkman, LLP)

• Jim Tung (Lacamas Laboratories) Dr. Manoranjan Acharya, has 9 years in Intel for technology development for multiple sub 20 nm technology. Responsible for managing multiple teams enabling Intel’s 14nm to interconnect process technology. Currently leading a program for SOC based multi-OS enablement as a senior technical program manager. Serves as an Adjunct Faculty in PSU, teaching Nano-electronics. Dr. Acharya has a Ph.D. Electrical Engineering.

Dr. Erik Sánchez earned his Ph.D. at the Pacific Northwest National Lab (PNNL) in Near-Field Microscopy (ESR/Physics) while attending Portland State University. After graduating, he continued at Harvard University in the Chemistry and Chemical Biology Department. Dr. Sánchez's Nano-Development Lab focuses on the development and implementation of nano-scale imaging techniques. His current research encompasses a variety of fields including Near Field Optics, Charged/Neutral Beam technology, 3D printing technology at the nano at micro scale as well as electromagnetic modeling of light interaction with materials. He is presently the graduate program director in Physics at PSU and co-runs an NSF REU program in microscopy related learning. See www.pdx.edu/nano-development-lab/.

Johanna Schwartz is a senior associate at Klarquist Sparkman, LLP, which is a proven intellectual property law firm for science and technology companies looking to creatively protect and defend their ideas. Johanna specializes in various aspects of intellectual property law, including patent prosecution, trademark law, licensing, and clearance and patentability assessments. Johanna is a member of Klarquist’s chemical and biotech patent groups and her practice focuses on preparing and prosecuting the

U.S. and international patent applications in a range of technical areas. Johanna specializes in the fields of organic chemistry, pharmaceuticals, and biotechnology, and has extensive experience with small molecules, organic synthesis, dosage formulations, polymer chemistry, and methodology development. Johanna also is active in the Portland legal community, where she mentors first-year law students at the Northwestern School of Law of Lewis and Clark College. She also is active in the chemical community and serves as an annual speaker at the American Chemical Society/Division of Organic Chemistry’s Graduate Research Symposium. Johanna earned her Ph.D. in organic chemistry at Oregon State University in 2009, studying under Dr. Rich Carter. She earned her J.D. from the Northwestern School of Law of Lewis and Clark College in 2012 and was admitted to the Oregon bar in 2012, and to the U.S. Patent and Trademark Office Patent Bar in 2013.

Jim Tung is a business development manager at Lacamas Laboratories in Portland, OR. He has been at his current position for 7 years, working on new chemical manufacturing projects and improving current plant processes. Before that, he was a senior research chemist at Obiter Research in Champaign, IL performing kilo-scale organic chemistry. An Oregon native, Jim got his B.S. in biochemistry from the University of Oregon, his Ph.D. in organic chemistry from the University of Notre Dame, with postdoctoral experience at Pfizer's laboratories in La Jolla, CA. He is the past chair of the Portland Section of the American Chemical Society. He has interests in process chemistry, social media outreach and encouraging career exploration and development for younger chemists.


P1-M4: Panel Nanotechnology Education Worldwide

October 15, Monday, 7:30-9:30PM, Fireside Room

Panel Organizers:

• Peter Moeck, Portland State University, OR, USA

• Malgorzata Chrzanowska-Jeske, Portland State University, OR, USA

• Milo Koretsky, Oregon State University, OR, USA

Panelists:

• Sorin Cotofana, Delft University of Technology, Delft, Netherlands

• Bonnie Gray, Simon Fraser University, BC, Canada

• Ricardo Reis, Federal University of Rio Grande do Sul, Porto Allegra-RS, Brazil

• Artunkumar Subramanian, University of Illinois at Chicago, IL, USA

• Yonhua (Tommy) Tzeng, National Cheng Kung University, Taiwan

• Martin Wybourne, Dartmouth College, NH, USA

Description:

The panel starts with two invited 30 minutes invited talks. One discusses public engagement in nanotechnology and what is the right balance between emphasizing the potential of emerging technologies and cautioning against over-optimistic claims. The second reviews ethics in Nano Education and of Nano Education. Six panelists, from various part of the world, will present their views in response to 4 predefined questions on various aspects of Nanotechnology Education. It will be followed by 30 minutes Q&A session with questions from the audience.

Invited Speakers:

• “Between Promise Fear and Disillusion Two Decades of Public Engagement Around Nanotechnology”

Richard Jones, FRS, of Sheffield University, UK

Nanotechnology emerged as a subject of public interest and concern towards the end of the 1990’s. A couple of decades on, it’s worth looking back at the way the public discussion of the subject has evolved. On the one hand we had the transformational visions associated with the transhumanist movement, together with some extravagant promises of new industries and medical breakthroughs. The flipside of these were worries about profound societal changes for the worse, and, less dramatically, but the potential for environmental and health impacts from the release of nanoparticles.

Since then we’ve seen some real achievements in the field, both scientific and technological, but also a growing sense of disillusion with technological progress, associated with slowing economic growth in the developed world. What should we learn from this experience? What’s the right balance between emphasising the potential of emerging technologies and cautioning against over-optimistic claims?

• “Ethics in Nano Education, but First the Ethics of Nano Education”

Cyrus Mody, Maastricht University, Netherlands

Discussions of the ethics or social implications of nanotechnology almost always focus on products (and occasionally manufacturing or experimental processes) which are nano-enabled and/or contain nanomaterials. These discussions are important, but they miss that (literally) the most visible part of nanotechnology involves the reorganization of education at all levels but especially in universities and community colleges. In general, institutions which have “nano” in their names have spent the 21st century advocating for more interdisciplinary, market-oriented, hands-on forms of education. Both the benefits and the costs of these educational innovations should be at the center of discussions of the societal implications of nanotechnology. Education is the means by which societies reproduce; thus education is always sensitive and frequently contested. In this paper I survey the long history of activism and political debate which informs the educational innovations associated with nanotechnology, including the innovation of bringing ethics training into nano education. I argue that ethics does belong in nano education, but to understand why we first need to analyze the ethics of nano education.


W2: NMDC Workshop on Negotiation:

The “art” of Effective Negotiation: “Just ask for it”

Marilyn Rampersad Mackiewicz

Tuesday, October 16 7:00 – 8:30, Fireside Room Description:

Negotiations occur every day in the scientific laboratory and workplace and often involve issues that are key to research success and career advancement.

This session will introduce some fundamentals of negotiation approaches relevant to a variety of one-on-one conversations and group settings.

We will focus on:

• the importance of negotiation to advance research and career objectives

• identification of negotiables including start-up packages, space, authorship, supplies, etc.

• necessary elements of a successful negotiation

• the importance of developing alternatives to an agreement

• techniques for handling difficult people and conversations

• the importance of listening and appreciating different viewpoints and identification of short and long-term negotiation goals.

Instructor:

Marilyn Rampersad Mackiewicz, a research assistant professor of Chemistry, has served Portland State University for 10 years. Prior to this she eraned her PhD in Bioinorganic and Organometallic Chemistry from Texas A and M University and her Bachelors of Arts in Chemistry and Psychology at Hunter College the City of the University of New York. She currently leads the laboratory interdisciplinary nanostructured materials laboratory bridging concepts in inorganic, analytical, medicinal, and nanomaterials chemistry for applications that relate to human health. They envision that the fundamental chemistry developed in their lab will improve our understanding and clinical outcomes of major diseases that impact the quality of human life such as cancer, macular degeneration, glaucoma, and Alzheimer’s disease. In addition to her outstanding research, Dr. Mackiewicz is a strong role model for the Portland State Women in STEM group where she serves as a faculty advisor. Her work with this group and through capstone class she designed on “Empowering and Advancing Women and Underrepresented Students in STEM” allows her to pursue her other passion in transforming the lives of students by providing skills in leadership, communication, networking, and negotiation strategies.

Website: PSU Laboratory of Nanostructured Materials

Follow on: Twitter (@Mack_Lab)


PSU MAPS Note Max is located on 5

th Ave towards PSU and Return to Embassy is located on 6

th Ave.

Walking: approx. 20 blocks, 20-30 minutes

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Lab Tours

The Center for Electron Microscopy and Nanofabrication Science Building 1 Room 22 Basement Level The Center for Electron Microscopy and Nanofabrication at Portland State University is a signature research facility of the Oregon Nanoscience and Microtechnology Institute (ONAMI), a collaboration between Oregon's research universities, Pacific Northwest National Laboratories and industry partners. The CEMN center possess a variety of instrumentation including; FEI Tecnai F-20 TEM, FEI Sirion XL30 FEG SEM, Zeiss Sigma VP FEG SEM, FEI Strata 237 Dual Beam FIB, Quantachrome Nova 2200e, VersaProbe II XPS/AES, Lesker AXXIS Thin Film Deposition System and FEI Helios 400s dual beam. For more information visit https://www.pdx.edu/cemn/welcome or come take a tour.

Erik Sanchez Lab Science Research and Teaching Center (SRTC) Room 170/169 Focusing on the development and implementation of nano-scale imaging techniques, we study the optical interaction of light and nanometric objects in order to generate enhanced fields for fluorescence and Raman spectroscopy/microscopy and determine new applications for Focused Ion/Electron Beam systems toward the study of biological systems using near-field and far-field microscopes. The Nano Development Group has a wide range of tools at its disposal to preform novel research. Many of these instruments have made from thrown out components and pieced together with care to perform useful functions. These include a focused ion beam (FIB) system, Gatan turbo pumped ion milling system (Mdl. 600A), it is used to thin bulk samples and includes an end point detection system, and a Micrion FIB using a SIMS IIIXP system.


Raj Solanki Lab Science Building 1 Room B2-55 The long-term objective of our lab has been to investigate electronic and optical materials and device fabrication processes for scaling down integrated circuits. Early work consisted of employing lasers and lamps to grow silicon-based and compound semiconductor films at low temperatures. This was followed by developing atomic layer deposition (ALD) for growth of nano-scale thin films. Our group was one of the first in US to work on ALD. The current research falls under the general categories of nanoelectronics, bio-electronics, and alternate energy sources, all of which have a common thread of solving problems related to improving economic and human conditions. We have expertise in multivalent batteries, nanoelectronics, atomic layer deposition, biosensors, solar cells, and graphene chemistry.

Jun Jiao Lab Maseeh College of Engineering & Computer Science (MCECS) Suite 301L

Dr. Jiao’s current research is focused

on the development of nanofabrication

techniques for the property-controlled

growth of nanotubes and nanowires,

and the investigation of carbon

nanotubes and semiconductor

nanowires as building blocks for

nanoelectronic devices and as the new

generation of electron field emitters.

Dr. Jiao is committed to mentoring and

developing new researchers. In addition

to managing an REU site, Dr. Jiao's lab

provides a wide range of opportunities for both graduate and undergraduate research. Some of the

projects currently underway include, sustainable groundwater treatment using granular activated

carbon supported bimetal catalysts, efficiency enhancement of photocatalytic water purification using

3D optical materials, photocatalytic material synthesis and feactor development for semiconductor

quantum yield optimization and developing advanced techniques for computationally refining images

gathered with in situ observation of metal oxide phase transformations using the transmission electron

microscope.


Jun Jiao PSU Engineering Lab Tour

Embassy Suites to Maseeh College of Engineering and Computer Science Suite 301L Max Green or Orange Line (Tickets required) 20-30 min walk

Note Max is located on 5th Ave towards PSU and Return to Embassy is located on 6th Ave.

Tickets cost $2.50 for 2.5 hrs. or $5 day pass.


Patrons

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