inp hbt technologyinp shbt inp hemt ) inp dhbt peak f t ( ghz ) si(ge) bjt gaas hbt inp dhbt inp...
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GCS Confidential
InP HBT Technology
• GCS offers high-performance InP HBT technology for foundry service
• Four qualified processes are available for different applications
• Design kits and layout support are available
• Superior ICs have been demonstrated by customers and several have been in production since 2007
OC-1
92
0.1 1 10 100 Data Rate (Gbps)
Si CMOS
SiGe HBT
GaAs HBT
GaAs HEMT
InP HBT
InP HEMT/MHEMT
OC-1
2
OC-4
8
OC-7
68
0
10
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0 50 100 150 200 250
Si(Ge) BJT
GaAs pHEMT
GaAs HBT
InP SHBT
InP HEMT
InP DHBT
Bre
ak
do
wn
Vo
lta
ge
( V
)
Peak fT ( GHz )
Si(Ge) BJT
GaAs HBT
InP DHBT
InP HEMT
Intrinsic material characteristics (hetero-junctions, high mobility, insulating substrate) and ease of integration (scalable) have made InP HBT the natural technology of choice for high performance circuits
Advantages of InP HBT
GCS Confidential
3
Comparison of High Speed Technologies
100
150
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350
0 1 2 3 4 5 6 7 8
BVceo (V)
f T (
GH
z)
InP DHBTs
FOM: 1100 GHz-V
InP SHBTs
FOM: 690 GHz-V
SiGe HBT
FOM: 555 GHz-V
DHBT1
DHBT3
DHBT2
GCS Confidential
GCS InP HBT Parameters (Typical)
HBT Parameters SHBT DHBT1 DHBT2 DHBT3
Emitter Size 1umx3um 1umx3um 0.8umx3um
0.8umx3um
Typical operating current density Jc(typ) 1mA/m2 1 mA/m2 2 mA/m2 2 mA/m2
Maximum operating current density Jc(max)
2 mA/m2 2 mA/m2 3 mA/m2 3 mA/m2
Typical operating voltage Vce 1 V 1.5V 1.5 V 1 V
Base-collector breakdown voltage BVcbo 4 V 8 V 5.5 V 4.5 V
Collector-emitter breakdown voltage BVceo 3.5 V 7 V 4.5 V 3.8 V
Emitter-base breakdown voltage BVebo 2 V 2 V 2 V 2 V
Thermal resistance Rth 9.9C/mW 5.3C/mW 5.3C/mW 5.3C/mW
fT (at Max allowed operating current) 180 GHz 150 GHz 250 GHz 300 GHz
fmax (at Max allowed operating current) 180 GHz 150 GHz 240 GHz 250 GHz
Passive Element Parameters Typical Value
TaN TFR Sheet Resistance (Ohm/sq) 50
MIM Unit Capacitance (fF/m2) 0.38
MIM Capacitance Breakdown Voltage (V) -
Backside Vias Optional
GCS Confidential
DHBT2 DC & RF Characteristics
- Extremely High Speed
ft vs Jc for 0.8x5 um^2 InP DHBT
0
50
100
150
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350
1 10 100 1000
Jce (kA/cm2)
ft (G
Hz)
f t at Vce = 1V
ft at Vce = 1.5V
ft Vce = 2V
GEN2 0.8x3 um^2 device SOA (sample1)
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0 0.5 1 1.5 2 2.5 3 3.5 4
Vce (V)
Jc (
KA
/cm
^2)
Ib=0ua
Ib=50uA
Ib=100uA
Ib=150uA
Ib=200uA
GEN2 250G 0.8x10 um^2 device SOA (sample1)
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0 0.5 1 1.5 2 2.5 3 3.5 4
Vce (V)
Jc
(K
A/c
m^
2) Ib=0ua
Ib=160uA
Ib=320uA
Ib=480uA
Ib=640uA
DHBT2
DHBT3
GCS Confidential
InP HBT MSI-Level Integration
HBT
TFR
MIM
Interconnects (3-level)
GCS Confidential
7
Wafer Maps of High Beta InP HBT
Beta
Ave 71.81
Std 3.49
Uniformity (1std) 4.9%
GCS Confidential
Leading Edge Products Using GCS InP HBT
GCS Confidential
Leading Edge Products Using GCS InP HBT
43 Gbps MUX (courtesy of Inphi Corp)
92 GHz Operation
90 GHz Static Divider (courtesy of Inphi Corp)
60 GHz TIA (courtesy of SMDI)
40G Driver Circuit (courtesy of OpNext Corp)
GCS Confidential
152 GHz InP HBT Static Frequency Divider (World Record)
Span DC to 77 GHz Span 5 MHz
-80
-70
-60
-50
-40
75.9975 75.9987 76.0000 76.0012 76.0025
Ou
tpu
t P
ow
er
(dB
m)
frequency (GHz)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0.00 19.50 39.00 58.50 78.00
Ou
tpu
t P
ow
er
(dB
m)
frequency (GHz)
fclk / 2 = 76 GHz
GCS Confidential
GCS InP HBT Passed HAST Test (JESD22-A110-B)
1x5um SHBT HAST 130oC & 85%RH (Bias at 1V and 10uA)
0.2
0.4
0.6
0.8
1
1.2
0 20 40 60 80 100
Duration Hours
No
rmalized
Beta
GCS Confidential
Excellent InP HBT Reliability
1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08 1.0E+09
Median Time to Fail (hrs)
25 30
50
100
150
200
250
300
350
InP HBT Reliability
Ea >0.97eV
MTTF @ 125C>3e6hr
• No low Ea (<0.5eV) failure mode occurred in our C-doped InP HBT
• Ea greater than 0.97eV and projected MTTF at 125oC is over 3 million hours under 150kA/cm2 operation
GCS Confidential