ika06n60t data sheets

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IKA06N60T^

TrenchStop series

Power Semiconductors 1 Rev. 2 Oct-04

Low Loss DuoPack : IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diode

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Designed for :- Variable Speed Drive for washing machines, air

conditioners and induction cooking- Uninterrupted Power Supply

• Trench and Fieldstop technology for 600 V applications offers :- very tight parameter distribution- high ruggedness, temperature stable behavior - very high switching speed- low VCE(sat)

• Low EMI

• Very soft, fast recovery anti-parallel EmCon HE diode• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type V CE I C;Tc=100°C V CE(sat ),Tj=25°C T j,max Marking Code Package Ordering Code

IKA06N60T 600V 6A 1.5V 175°C K06T60 TO-220-FP Q67040S4678

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage V C E 600 V

DC collector current, limited by T jmax

T C = 25°C

T C = 100°C

I C

12

6Pulsed collector current, t p limited by T jmax I C p u l s 18

Turn off safe operating area

V CE ≤ 600V, T j ≤ 175°C

- 18

Diode forward current, limited by T jmax

T C = 25°C

T C = 100°C

I F

12

6

Diode pulsed current, t p limited by T jmax I F p u l s 18

A

Gate-emitter voltage V G E ±20 V

Short circuit withstand time1)

V GE = 15V, V CC ≤ 400V, T j ≤ 150°C

t S C 5 µs

Power dissipation

T C = 25°C

P t o t 28 W

Operating junction temperature T j -40...+175

Storage temperature T s tg -55...+175

°C

1)Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

P-TO-220-3-31(TO-220 FullPak)



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Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R t h J C 5.3

Diode thermal resistance,

junction – case

R t h J C D 6.5

Thermal resistance,

junction – ambient

R t h J A 80

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

ValueParameter Symbol Conditions

min. typ. max.Unit

Static CharacteristicCollector-emitter breakdown voltage V ( B R ) C E S V G E=0V,

I C=0.25mA 600 - -

Collector-emitter saturation voltage V C E ( s a t ) V G E = 15V, I C=6A

T j=25°C

T j=175°C

-

-

1.5

1.8

2.05

Diode forward voltage V F V G E=0V, I F=6A

T j=25°C

T j=175°C

-

-

1.6

1.6

2.05

-

Gate-emitter threshold voltage V G E ( t h ) I C=0.18mA,

V C E=V G E

4.1 4.6 5.7

V

Zero gate voltage collector current I C E S V C E=600V ,V G E=0V

T j=25°C

T j=175°C

-

-

-

-

40

700

µA

Gate-emitter leakage current I G E S V C E=0V,V GE =20V - - 100 nA

Transconductance g f s V C E=20V, I C=6A - 3.6 - S

Integrated gate resistor R G i n t none



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Dynamic Characteristic

Input capacitance C i s s - 368 -

Output capacitance C o s s - 28 -

Reverse transfer capacitance C r ss

V C E=25V,

V G E=0V,

f =1MHz - 11 -

pF

Gate charge QG ate V C C=480V, I C=6A

V G E=15V

- 42 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE P-TO- 220- 3-31 - 7 - nH

Short circuit collector current1)

I C ( S C ) V G E=15V,t S C≤5µsV C C = 400V,

T j = 25°C

- 55 - A

Switching Characteristic, Inductive Load, at T j=25 °C


min. Typ. max.

Unit

IGBT Characteristic

Turn-on delay time t d ( o n ) - 9.4 -

Rise time t r - 5.6 -

Turn-off delay time t d ( o f f ) - 130 -

Fall time t f - 58 -

ns

Turn-on energy E o n - 0.09 -

Turn-off energy E o f f - 0.11 -

Total switching energy E t s

T j=25°C, V C C=400V, I C=6A,V G E=0/15V,

R G=23Ω ,

Lσ

2 )=60nH,

C σ 2 )

=40pFEnergy losses include“tail” and diodereverse recovery. - 0.2 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time t r r - 123 - nsDiode reverse recovery charge Q r r - 190 - nC

Diode peak reverse recovery current I r r m - 5.3 - A

Diode peak rate of fall of reverserecovery current during t b

di r r /dt

T j=25°C,V R=400V, I F=6A,

di F /dt =550A/ µs

- 450 - A/µs

1)Allowed number of short circuits: <1000; time between short circuits: >1s.

2)Leakage inductance Lσ and Stray capacity C σ due to dynamic test circuit in Figure E.



IKA06N60T^

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Switching Characteristic, Inductive Load, at T j=175 °C


min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time t d ( o n ) - 8.8 -

Rise time t r - 8.2 -

Turn-off delay time t d ( o f f ) - 165 -

Fall time t f - 84 -

ns

Turn-on energy E o n - 0.14 -

Turn-off energy E o f f - 0.18 -

Total switching energy E t s

T j=175°C, V C C=400V, I C=6A,V G E=0/15V,

R G= 23Ω

Lσ

1 )=60nH,

C σ 1 )

=40pFEnergy losses include“tail” and diodereverse recovery. - 0.335 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time t r r

- 180 - ns

Diode reverse recovery charge Q r r - 500 - nC

Diode peak reverse recovery current I r r m - 7.6 - A

Diode peak rate of fall of reverserecovery current during t b

di r r /dt

T j=175°C V R=400V, I F=6A,

di F /dt =550A/ µs

- 285 - A/µs

1)

Leakage inductance Lσ and Stray capacity C σ due to dynamic test circuit in Figure E.



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I C , C O L L E C T O R C U R R E N T

10Hz 100Hz 1kHz 10kHz 100kHz

0A

5A

10 A

15 A

T C=110°C

T C=80°C


1V 10V 100V 1000V

0,1A

1A

10A

DC

10µs

t p=1µs

50µs

5ms

5µs

500µs

f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of switching frequency

(T j ≤ 175°C, D = 0.5, V CE = 400V,

V GE = 0/+15V, R G = 23Ω)

Figure 2. Safe operating area

(D = 0, T C = 25°C,

T j ≤175°C;V GE=15V)

P t o t , P O W E R D I S S I P A T I O N

25°C 50°C 75°C 100°C 125°C 150°C0W

5W

10 W

15 W

20 W

25 W


25°C 75°C 125°C0A

2A

4A

6A

8A

T C, CASE TEMPERATURE T C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of case temperature

(T j ≤ 175°C)

Figure 4. Collector current as a function of case temperature

(V GE ≥ 15V, T j ≤ 175°C)

I c

I c



IKA06N60T^

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0V 1V 2V 3V

0A

3A

6A

9A

12 A

15 A

15 V

7V

9V

11 V

13 V

V GE=20V


0V 1V 2V 3V

0A

3A

6A

9A

12 A

15 A

15 V

7V

9V

11 V

13 V

V GE=20V

V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic(T j = 25°C)

Figure 6. Typical output characteristic(T j = 175°C)


0V 2V 4V 6V 8V 10V0A

3A

6A

9A

12A

15A

25°C

T J=175°C

V C E ( s a t ) , C O L L E C T O R - E M I T T S A T U R A T I O N V O L T A G E

-50°C 0°C 50°C 100°C0,0V

0,5V

1,0V

1,5V

2,0V

2,5V

3,0V

I C =6A

I C =12A

I C =3A

V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic(VCE=20V)

Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature(V GE = 15V)



IKA06N60T^

TrenchStop series


t , S W I T C H I N G T I M E S

0A 3A 6A 9A 12A 15A

1n s

10ns

100ns

t r

t d(on)

t f

t d(off)


10Ω 30Ω 50Ω 70Ω 90Ω

1ns

10ns

100ns

t f

t r

t d(off)

t d(on)

I C , COLLECTOR CURRENT R G, GATE RESISTOR

Figure 9. Typical switching times as afunction of collector current(inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, R G = 23Ω,Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor (inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, I C = 6A,Dynamic test circuit in Figure E)


50°C 100°C 150°C1n s

10ns

100ns

t r

t f

t d(on)

t d(off)

V G E ( t h ) , G A T E - E M I T T T R S H O L D V O L T A G E

-50°C 0°C 50°C 100°C 150°C0V

1V

2V

3V

4V

5V

6V

min.

typ.

max.

T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as afunction of junction temperature(inductive load, V CE = 400V,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature (I C = 0.18mA)



IKA06N60T^

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E , S W I T C H I N G E N E R G Y L O S S E S

0A 2A 4A 6A 8A 10A

0,0 mJ

0,1 mJ

0,2 mJ

0,3 mJ

0,4 mJ

0,5 mJ

0,6 mJ

E ts*

E on

*

*) E on

and E ts

include losses

due to diode recovery

E off


10Ω 30Ω 55Ω 80Ω

0,0 mJ

0,1 mJ

0,2 mJ

0,3 mJ

0,4 mJ

E ts*

E on

*

*) E on

and E ts

include losses


E off

I C , COLLECTOR CURRENT R G, GATE RESISTOR

Figure 13. Typical switching energy lossesas a function of collector current(inductive load, T J=175°C,V CE=400V, VGE=0/15V, R G=23Ω,Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor (inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, I C = 6A,Dynamic test circuit in Figure E)


50°C 100°C 150°C0,0mJ

0,1mJ

0,2mJ

0,3mJ

0,4mJ

E ts*

E on

*

*) E on

and E ts

include losses


E off


200V 300V 400V 500V0,0mJ

0,1mJ

0,2mJ

0,3mJ

0,4mJ

0,5mJ

E ts*

E on

*

*) E on

an d E ts

include losses


E off

T J, JUNCTION TEMPERATURE V CE , COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load, V CE=400V,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emitter voltage(inductive load, T J = 175°C,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)



IKA06N60T^

TrenchStop series


V G E , G A T E - E M I T T E R V O L T A G E

0nC 10nC 20nC 30nC 40nC 50nC0V

5V

10V

15V

480V

120V

c , C A P A C I T A N C E

0V 10V 20V

10pF

100pF

1nF

C rss

C oss

C iss

QGE, GATE CHARGE V CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge(I C=6 A)

Figure 18. Typical capacitance as a functionof collector-emitter voltage(V GE=0V, f = 1 MHz)

I C ( s c ) , s h o r t c i r c u i t C O L L E C T O R C U R R E N

T

12V 14V 16V 18V0A

20A

40A

60A

80A

t S C , S H O R T C I R C U I T W I T H S T A N D T I M E

10V 11V 12V 13V 14V0µ s

2µ s

4µ s

6µ s

8µ s

10µs

12µs

V GE, GATE-EMITTETR VOLTAGE V GE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector current as a function of gate-emitter voltage

(V CE ≤ 400V, T j ≤ 150°C)

Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(V CE=600V, start at T J=25°C,T Jmax<150°C)



IKA06N60T^

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Z t h J C , T R A N S I E N T T H E R M A L R E S I S T

A N C E

10µs 100µs 1ms 10ms 100ms 1s 1

10-1

K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

Z t h J C , T R A N S I E N T T H E R M A L R E S I S T

A N C E

10µs 100µs 1ms 10ms 100ms 1s 1

10-2

K/W

10-1

K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

t P, PULSE WIDTH t P, PULSE WIDTH

Figure 21. IGBT transient thermal resistance(D = t p / T )

Figure 22. Diode transient thermalimpedance as a function of pulsewidth(D=t P/T )

t r r ,

R E V E R S E R E C O V E R Y T I M E

200A/µs 400A/µs 600A/µs 800A/µs0ns

50ns

100ns

150ns

200ns

250ns

T J=25°C

T J=175°C

Q r r , R E V E R S E R E C O V E R Y C H A R G E

200A/µs 400A/µs 600A/µs 800A/µs0,0µC

0,1µC

0,2µC

0,3µC

0,4µC

0,5µC

T J=25°C

T J=175°C

di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time asa function of diode current slope(V R = 400V, I F = 6A,Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope (V R = 400V, I F = 6A,Dynamic test circuit in Figure E)

R , ( K / W ) τ , ( s )

0.381 1.867*10-2

6

2.57 1.350

0.645 2.208*10-3

1.454 5.474*10-4

0.062 5.306*10-5

0.186 5.926*10-1

C 1=τ 1/R 1

R 1 R 2

C 2=τ 2/R 2

R , ( K / W ) τ , ( s )

0.403 1.773*10

-2

62.57 1.346

0.938 1.956*10-3

2.33 4.878*10-4

0.071 4.016*10-5

175 5.684*10-1

C 1=τ 1 /R 1

R 1 R 2

C 2=τ 2/R 2



IKA06N60T^

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I r r ,

R E V E R S E R E C O V E R Y C U R R E N T

200A/µs 400A/µs 600A/µs 800A/µs0A

2A

4A

6A

8A

T J=25°C

T J=175°C

d i r r / d

t , D I O D E P E A K R A T E O F F A L L

O F R E V E R S E R E C O V E R Y C U R R E N T

200A/µs 400A/µs 600A/µs 800A/µs0A/µs

-100A/µs

-200A/µs

-300A/µs

-400A/µs

-500A/µs

T J=25°C

T J=175°C

di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery currentas a function of diode currentslope(V R = 400V, I F = 6A,Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall of reverse recovery current as afunction of diode current slope(V R = 400V, I F = 6A,Dynamic test circuit in Figure E)

I F , F O R W A R D C U R R E N T

0,0V 0,5V 1,0V 1,5V 2,0V0A

2A

4A

6A

8A

10 A

25°C

T J =175°C V

F , F O R W A R D V O L T A G E

0°C 50°C 100°C 150°C0,0V

0,5V

1,0V

1,5V

2,0V

6A

I F =12A

3A

V F, FORWARD VOLTAGE T J, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current asa function of forward voltage

Figure 28. Typical diode forward voltage as afunction of junction temperature



IKA06N60T^

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P-TO220-3-31

dimensions

symbol [mm] [inch]

min max min max

A 10.37 10.63 0.4084 0.4184

B 15.86 16.12 0.6245 0.6345

C 0.65 0.78 0.0256 0.0306

D 2.95 typ. 0.1160 typ.

E 3.15 3.25 0.124 0.128

F 6.05 6.56 0.2384 0.2584

G 13.47 13.73 0.5304 0.5404

H 3.18 3.43 0.125 0.135

K 0.45 0.63 0.0177 0.0247

L 1.23 1.36 0.0484 0.0534

M 2.54 typ. 0.100 typ.

N 4.57 4.83 0.1800 0.1900

P 2.57 2.83 0.1013 0.1113

T 2.51 2.62 0.0990 0.1030



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Figure A. Definition of switching times

Figure B. Definition of switching losses

I r r m

90% I r r m

10% I r r m

di /dt F

t r r

I F

i,v

t QS

QF

t S

t F

V R

di /dt r r

Q =Q Qr r S F

+

t =t t r r S F

+

Figure C. Definition of diodesswitching characteristics

p(t)1 2 n

T (t) j

τ1

1

τ2

2

n

n

τ

TC

r r

r

r

r r

Figure D. Thermal equivalentcircuit

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

and Stray capacity C σ =40pF.



IKA06N60T^

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Attention please!

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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,descriptions and charts stated herein.

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ika06n60t data sheets

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