ihp technology roadmap update and future

IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany www.ihp-microelectronics.com © 2009 - All rights reserved

IHP Technology Roadmap Update and Future

Research Topics

Bernd Tillack

IHPIm Technologiepark 2515236 Frankfurt (Oder)

MOS-AK Meeting, April 2-3, 2009


IHP Frankfurt (Oder)

Founded 1983

1991 Member of the Leibniz Association

1999: “Innovations for High Performance microelectronics”1000 m² class 1 clean room,staff: ~ 250 co-workers

2009: Leibniz Institute

4 core competencies:Materials research, Si process technology, RF circuit design, wireless communication systems

Funding 2008Institutional funds: € 16 million Third-party funds: € 11.5 million ERDF funds: € 12.7 million (European Regional Development Fund)


Core Competencies

Silicon based high-frequency technologies, circuits and systems for wireless and broadband communication

• System solutions for wireless and broadband communicationPrototypes of mixed-signal ICs; system-on-chip

• RF circuit designAnalog circuits in the higher GHz-range (frontends, converter..)

• Technology platform for wireless and broadband communication Performance increasing and functionality extending modules for standard

CMOS

• New materials for microelectronics technologyincl. integration (e.g. SiGe:C, high-K, nanostructures)


Outline

• Technology Vision

• Future Research Topics

• Summary


Technology Vision

Develop Develop

High Value Added Technologies High Value Added Technologies

for Wireless and Broadband Applicationsfor Wireless and Broadband Applications


Technology Vision

CMOS Baseline Technology

Modular extension of CMOS technologies

SiGe:C HBT LDMOS Flash Memories Passive Devices


Development Early access QualifiedSeptember 2008

Technology Roadmap for MPW

* Qual. on customer request

Process 2007 2008 2009 2010 2011

SGB25V yes

GOD module

SG25H1 yesCMOS

Bipolar

SG25H3 yesCMOS

BipolarH3 PNP module PNP: 85/120 / 2.5 ready for qualification

SG13B

SG13S yes

SG13C only RF CMOS yes

Bipolar Performance fT/f

max (GHz) / BV

CE0 (V)

digital libs

75/95 / 2.4 45/90 / 4 25/70 / 7

190/190 / 1.9 180/220 / 1.9

120/140 / 2.3 110/190 / 2.3 45/140 / 5 25/80 / 7

250/300 /1.745/120/4.0 tbd in 2009

tbd in 2009


IHP‘s Technology Focus: More than Moore

Source: ITRS Roadmap 2005

IHP: 0.13 µm BiCMOS

THz Devices

Si Photonics

MEMS


Technology Vision – Future Research Topics


Modular extension of CMOS technologies – Diversification


THz DevicesHBTs


THZ HBTs


DOTFIVE Project

• Timeframe

3-year (2/08-1/11) IP project of 7th Framework Program• Target

0.5 THz SiGe Heterojunction Bipolar Transistor

For the future development of communication, imaging and radar applications

• Consortium

15 partners from industry and academia in 5 countries

ST, Infineon, IMEC, IHP, XMOD, GWT-TUD, ENSEIRB, Bunderwehr Uni. Munich, Univ. of Neaples, Univ. of Linz, Univ. of Siegen, Univ. of Wuppertal

• Budget

Total € 14.75 million

€ 9.7 million founded by European Commission• For more information see www.dotfive.eu


DOTFIVE ProjectToday's state-of-the-art SiGe HBTs achieve roughly a maximum operating frequency of 300 GHz at room temperature. With Dotfive Europe is getting ahead of the RF ITRS roadmap:

(www.dotfive.eu)


Generations of IHP’s High-Speed HBTs

Record gate delay of 2.5 ps

Digital circuit speed benchmarked by ring oscillator gate delay

Fastest circuit speed achieved in any Si IC technology

IEDM 2008: SiGe HBT module with 2.5 ps gate delay

23456789

101112

2006

300/350200/200

70/100

120/140

fT

/fmax

(GHz)

Year

Profile optimization

Self aligned &elevated extrinsic base

Low parasitic coll. design

Optimized base link

C-Doped SiGe base

2004 20082002

2.5ps

2000

Gat

e D

elay

(ps

)





SiGe:C HBT RF LDMOS Flash Memories Passive Devices

THz DevicesHBTs MEMS Integration


MEMS integration in BiCMOS

Goal:

Design and fabrication of dedicated MEMS components for Radio Frequency ICs

Integration of MEMS processing technique to BiCMOS

Major Applications Areas

RFMEMS: High-Q passives, RFMEMS Switches

Deep-Silicon Etching; Substrate etching under passives, TSVs, Sensors

RFMEMS Switches

Si

Deep-Silicon Etching, TSV

Etched Region

Sensors






THz DevicesHBTs? MEMS Integration

Optical function“Si Photonics”


Silicon Photonics

(Source: Intel)

• Photonics electronics functional integration on CMOS (HELIOS) EU FP7

• SiLight BMBF


Si Photonics: Waveguide Integration

Waveguide preparation in IHP technology

High slope & minimal roughness

Excellent uniformuty

Small waveguide losses (<0.5dB/cm)

R=200…2000µm

…

R=1mm R=2mm

MZIs

S-BendsMMIs


40 Gbps TIA in SiGe Technology1

• Transimpedance Amplifier (TIA): amplifies & converts photo-current to an output voltage

• 40 Gbps needs ~30 GHz BW

• 200 GHz SiGe BiCMOS (SG25H1)

• Developed in cooperation w. TU Dresden / Ellinger

40 Gbps TIA in SiGe Technology

1 A 40 Gbit/s TRANSIMPEDANCE AMPLIFIER IN 0.25 μm SiGe TECHNOLOGY WITH ULTRA LOW POWER CONSUMPTION S. Hauptmann, D. Schoeniger, R. Eickhoff, F. Ellinger, and C. Scheytt, IEEE MIKON 2008


40 Gbps TIA in SiGe Technology (II)

40 Gbps TIA in SiGe Technology

• Chip size 0.67 x 0.28 mm2

• TIA design combines High gain (73 dB) with very low power

Simulated: dashed; measured: solid


Silicon PhotonicsBiCMOS technology with optical functionality • Goal: Integration electronics & waveguide optics in a

qualifiedtechnology offered to fabless design partners (customers)

Optical BiCMOS

0.25/0.13 BiCMOSTechnology

SOI WaveguideOptics

ModulIntegration


Summary

0.25 µm/0.13 µm BiCMOS platform as baseline technology for

• MPW and prototyping

• Integration of additional functionality following the

“More than Moore” path


Comparison with State-of-the-Art

IHP single poly (reference)+ well controlled base epitaxy+ low resistances

(Rücker et al. IEDM 2007)

New double poly+ fully self-aligned & lateral base-link =>reduced capacitances+ low silicide resistance+ enhanced SIC

E

B

C100nm

100nm

E

B

C


CMOS/BiCMOS – MEMS Integration

BiCMOS + Microviscosimeter (Minimal invasive blood sugar sensor ):

Electronics + wireless communication + sensor function

Cantilever


RFMEMS Switches in BiCMOS

Parameter Simulated Results

Insertion Loss 0.3 dB

Isolation 25 dB

OperatingVoltage

< 20 V(Measured Result)

Con-state/Coff-state >30

Movable Membrane

SupportingBeams

AnchorsBottom Electrode

Main application areas: Multiband circuits and 60-70 GHz applications

Reliability is the main concern

<10 V operating voltages seems possible

Etching Holes


RFMEMS Capacitive Switch

10 20 30 40 50 60 700 80

-60

-40

-20

-80

0

freq, GHz

dB(M

EM

S_C

73_S

W_V

1M1.

.V1M

1_C

73_M

EA

S_S

.S(2

,1))

-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0

-0.5

0.0

0.5

-1.0

1.0

nothing

plot

_vs(

dB(V

1M1_

C53

_ME

AS

_S.S

(2,1

)[48

]), V

1M1_

C53

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

53_M

EA

S_S

.S(2

,1)[5]

), V

1M1_

C53

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

53_M

EA

S_S

.S(2

,1)[10

]), V

1M1_

C53

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

53_M

EA

S_S

.S(2

,1)[30

]), V

1M1_

C53

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

53_M

EA

S_S

.S(2

,1)[40

]), V

1M1_

C53

_ME

AS

_S.v

cc) <in

valid

>

-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8-1.0 1.0

-0.5

0.0

0.5

-1.0

1.0

nothing

plot

_vs(

dB(V

1M1_

C63

_ME

AS

_S.S

(2,1

)[48

]), V

1M1_

C63

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

63_M

EA

S_S

.S(2

,1)[5]

), V

1M1_

C63

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

63_M

EA

S_S

.S(2

,1)[10

]), V

1M1_

C63

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

63_M

EA

S_S

.S(2

,1)[30

]), V

1M1_

C63

_ME

AS

_S.v

cc) <in

valid

>pl

ot_v

s(dB

(V1M

1_C

63_M

EA

S_S

.S(2

,1)[40

]), V

1M1_

C63

_ME

AS

_S.v

cc) <in

valid

>

5 10 15 20 250 30

-25

-20

-15

-10

-5

-30

0

Voltage

S21

24 GHz

20 GHz

15Hz

5 GHz2.5 GHz

10 GHz

5 10 15 20 250 30

-25

-20

-15

-10

-5

-30

0

Applied Voltage (V)

S21

(dB

)

Pull-In Region

Measured Data @ 24 GHz

Pull-In voltage ~17V Mechanically stable up to 30V and no stiction observed At 24 GHz 25 dB isolationRF Characterization and reliability measurements are still on-going.


Integration Elektronik-Photonik

ihp technology roadmap update and future

Documents

technology roadmap

microelectronics technology

technology platform

si process technology

ihps technology focus

si ic technology iedm

thz hbts

sige hbt module