ibm graphene nanoelectronics technologies

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IBM Research | Science & Technology IBM Graphene Nanoelectronics Technologies C.Y Sung Program Manager IBM T.J. Watson Research Center Science & Technology Strategy Department

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Page 1: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

IBM Graphene NanoelectronicsTechnologies

C.Y Sung Program ManagerIBM T.J. Watson Research Center Science & Technology Strategy Department

Page 2: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis (CVD and Epi)

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 3: IBM Graphene Nanoelectronics Technologies

IBM Research

1986

1995

1972 1998

1995

1982

1956

1961

IBM Research Worldwide

Ten Labs with >4,000Researchers Around The World

Ten Labs with >4,000Researchers Around The World

Page 4: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

Technical Transition Plan

FundamentalResearch

Screen new materials & processes

IBM Almaden & Yorktown

Advanced Semiconductor

R&D

Innovation in integrated device & process technology

Albany Nanotech Center

TechnologyDevelopment

Multi-company co-located joint development

IBM East Fishkill

Manufacturing

Process synchronized fabricators (GDSII compatible)

USA

Page 5: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

Frontiers of IT Nanosystem Vision

New systems enable us to

reach the greatest potential

for our creativity, innovation

and ingenuity.

Page 6: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

6

Fraud Prevention Enhanced Wellness

Financial Retail

Revenue Maximization

Medical

Product Design, Launch andTime to Revenue & Profit Optimization

General Business

Better Security in a Complex World

Defense and Security

Learning Systems Will Impact Every Sector

Page 7: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

NRI Scope and Objectives

NRI Scope :

Discover New Switch Device for Beyond CMOS by 2020

NRI Objectives :

By 2020, discover and reduce to practice via technology transfer to industry non-CMOS devices, technologies and new manufacturing paradigms, which will provide a new scaling path and extend the historical cost / function reduction with increased performance and density for another several orders of magnitude beyond the limits of CMOS.

Page 8: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 9: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Carbon on Insulator (COI)

Graphene Attractive Properties:

•Extraordinary high e- and h+ mobility (20,000 cm2/Vs, >100X of Si)

Long carrier mean free paths (~a few µµµµm @ Room Temp.)->Enable High Performance Devices

•Ultra-thin body (one-atom thick) Ideal electrostatics: ->Enable Scaling Paths

•High thermal conductance and high current carrying capability->Allow Low Power Operations

•Linear energy dispersion and massless ballistics transport

->New Physics for New Devices•Planar structure

-> CMOS Process Compatible

12-22 nm

Page 10: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis (Epi and CVD)

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 11: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Epi Graphene on SiC

IDS – VDS

Page 12: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Graphene Mono Atomic Layer on 2” SiC Wafer

100 µµµµm

1

0

Rela

tive G

-prim

e in

ten

sity

1-2 layers

1-2 layers 1-2 layers1-2 layers

1-2 layers

100 µµµµm

1

0

Rela

tive G

-prim

e in

ten

sity

1-2 layers

1-2 layers 1-2 layers1-2 layers

1-2 layers

Graphene

Buffer

SiC

Graphene on Si-face of SiC

Page 13: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Up to 12” Successfully Demonstrated

Roll-Based Producing Graphene Films

Cu

PMMA

Spin-on PMMA

Dissolve Cu

Cu

PMMA

Spin-on PMMA

Dissolve Cu

Place PMMA + graphene

on substrate

Dissolve PMMA

Place PMMA + graphene

on substrate

Dissolve PMMA

Graphene Growth on Cu Foils by CVD

Page 14: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 15: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

220nm Single Atomic Layer GrapheneTransistor on 2” SiC Wafer

1

10

100

Curr

ent G

ain

|h

21|

1 10 100

Frequency [GHz]

gate length 240 nm 550 nm

100 GHz

VD = 2.5 V

Page 16: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 17: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Graphene Logic Devices (Innovative Concepts)

IDS – VDS

Page 18: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Veselago Lens Switches

� On/Off via electron focusing

� Speed Cheianov, Fal’ko & Altshuler,

Science (2007)

Page 19: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Graphene Optoelectronics

IDS – VDS

Page 20: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

VDS

Eye-diagram

Or

Recovered waveform

Optical

amplifie

r

980 nm Pump

Pseudo-Random-Bit-Sequence

(PRBS) generator

Electrical Optical

modulator (E-O conversion)

1.55 µm continuous light in

Optic

al

Graphene photodetector(O-E conversion)

VG

OpticalBit stream

Trigger

Bias-teeRecovered

electrical signal Electricalamplifier

fG = 16 GHz

10 Gbit/s

Graphene

Paladiumcontact

Titaniumcontact

5 µm

1.55 µm light spot

Graphene

Paladiumcontact

Titaniumcontact

5 µm

1.55 µm light spot

1.4 mA/W

2.7 mA/W

Graphene Photodetector in 10 Gbit/s 1.55 µm

Optical Communication Link

Page 21: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Graphene Sensor and Energy Devices

IDS – VDS

Page 22: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Graphene RF Thin Film Sensors

Digital Contact Lens

Graphene Thin Film

Smart Graphene Bandage

Sensitive Sensor for toxic gases and proteins

Page 23: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Green applications: Photovoltaics/ Supercapacitors

• Graphene Energy Devices for Low Weight•High Performance Battery Cells•Supercapacitors.

•Graphene based photovoltaics device create more efficient cell.

Page 24: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Outline

�Motivation

�Synthesis

�Device Fabrication and Performance

� Future Applications

�Conclusions

Page 25: IBM Graphene Nanoelectronics Technologies

IBM Research | Science & Technology

C.Y Sung | IBM Confidential

Tablet Computer

Touch Screens/ Microelectronics

Scientific Background on the Nobel Prize in Physics 2010

Graphene

Compiled by the Class for Physics

of the Royal Swedish Academy Science

Communications

Composite Materials

Watches/Calendars

Electronics PaymentsMobile Phones

Thin Flexible Light Panel