teaching nanoelectronics paolo lugli institute for nanoelectronics munich, germany
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Teaching Nanoelectronics
Paolo Lugli
Institute for NanoelectronicsMunich, Germany
2
Outline
The Institute for Nanoelectronics at TUM
What is Nanoelectronics ?
Evolutionary vs. disruptive approaches More Moore More than Moore Beyond Moore
How do we teach Nanoelectronics ?
Diplom, Bachelor and Master of Science in Electronics and Information Technologies (EI) at TUM
International Master Programs at TUM Joint Master Program at NTU-Singapore New Joint EI-PH Master Program in “Nanoscience and
Nanoengineering” at TUM
Conclusions
Institute for Nanoelectronicswww.nano.ei.tum.de
Experimental activities
Nanoimprinting
Ni stamps
Si masters
100 nm50 nm
30 nm
10 nm
Nanoimprinting with MBE mold (for sub 10 nm resolution), with homemade imprinter
Commercial imprinter (up to 2,5”, down to 50 nm resolution)
• Photonic crystals• Nanopatterning for quantum wire growth• Metallic molds• Patterning of organic films. Sub-wavelength grating
Fabrication of organic devices
400 500 600 700 8000
20
40
60
80
100
85% @ 550nm
EQ
E [
%]
Wavelength [nm]OPD external quantum efficiency
S D
PEDOTgate
Plastic substrate
PVA
Electro-optical nanodevice characterization
Si nanowire FET
IR emission of a Quantum Cascade Laser
Institute for Nanoelectronicswww.nano.ei.tum.de
Modelling/simulation activities
Multiscale approach for Nanoelectronics: from Devices to Architectures
Device-level models
• Drift-Diffusion simulation for organic devices (TFTs, OLEDs, photodiodes, solar cells)• Ab-initio modeling of single molecule diodes and CNTs• Monte Carlo simulation of quantum devices
Au
Architectures
• Passive Crossbar non Volatile Memories• Capacitive / Ferroelectric Memories• Quantum Cellular Automata logic architectures
SPICE-level models
• DC circuit models for nanodevices• Coupling quantum circuits to resonators• Design of hysteretic devices• Analysis of active matrix array for imagers
Quantum circuit
inV outV
inC outC
C
R
L C
qRqL
M
Nanoelectronics
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• Nanotechnology is the design and construction of useful technological devices whose size is a few billionths of a meter
• Nanoscale devices will be built of small assemblies of atoms linked together by bonds to form macro-molecules and nanostructures
•Nanoelectronics encompasses nanoscale circuits and devices including (but not limited to) ultra-scaled FETs, quantum SETs, RTDs, spin devices, superlattice arrays, quantum coherent devices, molecular electronic devices, and carbon nanotubes.
• Negative resistance devices, switches (RTDs, molecular), spin transistors• Single electron transistor (SET) devices and circuits• Quantum cellular automata (QCA)
Limits of Conventional CMOS technology• Device physics scaling • Interconnects
Nanoelectronic alternatives?
Issues • Predicted performance improves with decreased dimensions, BUT• Smaller dimensions-increased sensitivity to fluctuations• Manufacturability and reproducibility• Limited demonstration system demonstration
New information processing paradigms
• Quantum computing, quantum info processing (QIP)• Sensing and biological interface• Self assembly and biomimetic behavior
6
Motivation for Nanoelectronics
7
The roadmap
Semiconductor technology trends (ITRS 2006)
8
Materials for Si-nanoelectronics
At the origin of Si microelectronics only few elements were necessary for the whole processes. Current technology requires a much larger number of materials.
Source: Intel 9
Source: Intel 10
More Moore -> Beyond Moore
11
Robert Chau, Intel, ICSICT, 2005
Critical issues
198810-1
Year
Ch
an
nel Ele
ctr
on
s
1992 1996 2000 2004 2008 2012 2016 2020
100
101
102
103
104
16M64M
256M1G
4G16G Memory Capacity/Chip
4M
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Nano-Device Structure Evolution
13Source: Intel
Lg = 1.3µm; Ø = 26 nm; tox = 300nm SiO2
•Normally-off
•Schottky contacts -2,0µ
-1,5µ
-1,0µ
-500,0n
0,0
-2 -1 0
-Vgs
-20 V
-15 V
-10 V
+5V; 0 V; -5 V
drain bias Vds
[V]
drai
n cu
rren
t I d
[A
]
20V;
Weber, W.M. et al. IEEE Proc. ESSDERC 2006, p. 423 (2006)
gate
S D
Vd
Vg
Id
NW
Si-NW transistor: output characteristics
15
Possible Quantum Dot Applications
PhotodetectorInputQuantum dots or
single electron transistorsas processing elements
CMOS Drivers providing fan-out
Single “cell” of a Cellular Architecture
Single Electron Memory Nanoelectronic Integrated
Circuit (NIC)
Quantum Cellular Automata Quantum Computation (QBITs)
“1” “0”
1
23
4
0
source drain
nanocrystalsgate
SiO2
gateMemorynodeSi channel
SiO2
Quantumdots
Tunnelingbarriers
Quantumdots
16
17
Beyond Moore
Beyond CMOS logic and memory device candidates:
• Nanowire transistors
• CNT transistors
• Resonant tunneling devices
• NEMS devices
• Single electron transistors
• Molecular devices
• Spintronic devices
All those candidates (some of which not yet demonstrated) still suffer from major reliability and stability problems
18
Molecular components
OPV11 molecules with simplified phenyl side chains synthesized by the group of Prof. Dr. E. Thorn-Csányi at the University of Hamburg)
In collaboration with G. Abstreiter, WSI, M. Tornow, TU Braunschweig
20 nm embedded GaAs layer after etching and deposition of 3 nm Ti and 7 nm Au.
5 nm embedded GaAs layer after etching and deposition of 2 nm Ti and 6 nm Au.
S. Strobel et al., SMALL 5, 579-582 (2009)
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Cross bar non volatile memory
V
The current-voltage characteristics of molecules is typically hysteretic, with step-like nonlinearities and possibly non-symmetric (rectifying) behavior.
A crossbar memory – probably the simplest possible functional circuit – is one of the proposed application of single molecule electronics
G. Casaba et al., IEEE Transactions on Nanotechnology, 8, 369 (2009)
Problems with single molecule devices
-3 -2 -1 0 1 2 3-500p
-400p
-300p
-200p
-100p
0
100p
200p
300p
400p
500p 0Down (P03:S05-08-) 1Up (P03:S05-08-) 1Down (P03:S05-08-) 2Up (P03:S05-08-) 2Down (P03:S05-08-) 3Up (P03:S05-08-) 3Down (P03:S05-08-) 4Up (P03:S05-08-) 4Down (P03:S05-08-) 5Up (P03:S05-08-) 5Down (P03:S05-08-) 6Up (P03:S05-08-) 6Down (P03:S05-08-) 7Up (P03:S05-08-) 7Down (P03:S05-08-) 8Up (P03:S05-08-) 8Down (P03:S05-08-) 9Up (P03:S05-08-) 9Down (P03:S05-08-) 10Up (P03:S05-08-) 10Down (P03:S05-08-) 11Up (P03:S05-08-) 11Down (P03:S05-08-) 12Up (P03:S05-08-) 12Down (P03:S05-08-) 13Up (P03:S05-08-) 13Down (P03:S05-08-) 14Up (P03:S05-08-) 14Down (P03:S05-08-) 15Up (P03:S05-08-) 15Down (P03:S05-08-) 16Up (P03:S05-08-) 16Down (P03:S05-08-) 17Up (P03:S05-08-) 17Down (P03:S05-08-) 18Up (P03:S05-08-) 18Down (P03:S05-08-) 19Up (P03:S05-08-) 19Down (P03:S05-08-) 20Up (P03:S05-08-)
Cur
rent
[A]
Voltage [V]
G17-1c, P03, S05, über Nacht
A large variation is found in the IV characteristics between succesive sweeps.
Reasons can be due to:
• Configurational changes in single molecules• Variation in the number of molecules attached to the electrodes• Changes in the bond of a single molecule to the metal contact• …
Such variability has to be dealt at a circuit/architecture level
Molecular transistor
Back gate: a molecule attached to source and drain electrodes on an oxidized metal or heavily doped Si gate (substrate). This is the same configuration of the Thin Film Transistors
Electrochemical gate: a molecule bridged between source and drain electrodes in an electrolyte in which a gate field is applied by a third electrode inserted in the electrolyte.
Chemical gate: current through the molecule is controlled via a reversible chemical event, such as binding, reaction, doping or complexation.
Once a conducting molecule is set between 2 contacts, an additional electrode has be introduced as gate. There are various possibilities:
Coupled nanomagnets
Fabrication and pictures by A. Imre
Investigations of permalloy nanomagnets (thermally evaporated and patterned by electron beam lithography) confirm the simulation results
Sim
ulat
ion
AF
MS
imul
ated
fiel
dM
FM
Courtesy of W. Porod, Notre Dame University
Planar Majority Gate Design
Output points down only if both inputs are pointing up NAND gate.
•Difficult to design – ferro- and antiferromagnetic couplings to the central dot should be equally strong
•Electrical inputs are difficult to fabricate – horizontally lying dots provide a hard-wired input. No output, we just imaged it with the MFM
•Design is based on Parish and Forshaw: Magnetic Cellular Automate Systems IEE Proc.-Circuits Devices Syst., Vol. 151, No. 5, October 2004
Programming input (bias to center dot)
Input A
Input B
Output
Imre et. al. Science 2006
3
200 nm
Working majority gate with nanomagnets
24Imre et. al. Science 2006
SEM images MFM images
Logic with nanomagnets
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In collaboration with M. Becherer and D. Schmit-Lansiedel (TUM) , W. Porod (Notre Dame)
Outputs
Inputs
Information propagation
The challenges:How to make signals propagating? Integrated clockingHow to write in the magnets? Localized field from wiresHow to read out the magnets? Hall sensor
M. Becherer et al., IEEE TRANSACTIONS ON NANOTECHNOLOGY 7, 316 (2008)
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More than Moore
Interfacing to the real worldIf the interaction is based on a non-electrical phenomenon, then specific transducers are required. Sensors, actuators, displays, imagers, fluidic or bio-interfaces (DNA, Protein, Lab-On-Chip, Neuron interfaces, etc.) are in this category
Enhancing electronics with non-pure electrical devicesNew devices can be used in RF or analog circuits and signal processing. Thanks to electrical characteristics or transfer functions that are unachievable by regular MOS circuits, it is possible to reach better system performances. RF MEMS electro-acoustic high Q resonators are a good example of this category.
Embedding power sources with the electronics:Several new applications will require on-chip or in-package micro power sources (autonomous sensors or circuits with permanent active security monitoring for instance). Energy scavenging micro-sources or micro-batteries are examples of this category.
2727
Why organic electronics ?
• Easy to process (low costs)
• Large area application
• Flexible substrates
• Chemical tunability of conjugated polymers (absorption spectrum)
• Easy integration in different devices
• Ecological and economic advantages
Example of organic sheet-image scanner
Inkjet-Printed solar cell from KonarkaOLED Display For Mp3-player OLED TV from Sony
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IV-Characteristics BHJ OPV
1,00E-06
1,00E-05
1,00E-04
1,00E-03
1,00E-02
1,00E-01
1,00E+00
1,00E+01
1,00E+02
-4,0 -3,0 -2,0 -1,0 0,0 1,0 2,0
V
I [m
A/c
m2]
Dark
Illuminated
P3HT
PCBMTop Electrode
P3HT:PCBM Blend
PEDOT:PSS
ITO
Substrate
Organic Photodetectors on glass
• OPD with on/off ratio of more than 104 @ -1 V
ITO/PEDOT:PSS/P3HT:PCBM/LiF/AL
0.6 nm LiF, 100 nm Al
140 nm P3HT:PCBM (1:1)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
500 550 600 650 700 750 800 850
Wavelength [nm]
Am
pli
tud
e [n
orm
aliz
ed]
Bulk heterojunction photodetector
S. Tedde et al., Fully Spray Coated Organic Photodiodes, Nano Letters 9 (3), 980 (2009)
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Organic Photodetectors on plastic
In collaboration with Siemens CT MM1
Multibarrier PET Foil
Au or ITO PEDOT:PSS
P3HT:PCBM blend
CaAg
Thin Film Encap.
I/V
400 500 600 700 8000
20
40
60
80
100
85% @ 550nm
EQ
E [
%]
Wavelength [nm]
The combination of organic semiconductors with a CMOS-chip offers advantages compared with a conventional CMOS-sensor:
high photosensitivity -> fill factors up to 100 % wavelength tunability -> sensors for infrared/ultraviolet region inexpensive fabrication subwavelength grading for optimized performance and polarization
sensitivity
PCBM:P3HT
glass-substrate
ITO
Al 100 nm
PEDOT
LiF 1nm
ITO 100 nm
Requirements for combination CMOS-organic:
work function of the metallization of CMOS chip must be aligned to organic semiconductor energy levels -> e.g. Aluminium
deposition process of organic semiconductors should be possible on rough/patterned surfaces
Standard organic photodetector
Integration with CMOS
In collaboration with Uni. Trento and Fondazione Bruno Kessler 30
-4 -3 -2 -1 0 1 2
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
inverted diode (dark/light=100 mW/cm²)
noninverted
Cur
rent
den
sity
(m
A/c
m²)
Voltage (V)
300 400 500 600 700 800 900 100005
10152025303540455055606570
Tra
nsm
issi
on(%
)
wave length (nm)
IV-curves (dark/light):
on/off-ratio can be even better than of standard device
lower dark current
lower light current (due to higher absorbance of gold electrode compared with ITO)
higher serial resistance
Transmission of gold-electrode (20 nm)
Preliminary results on inverted structure
D. Baierl et al., to be published in Organic Electronics 31
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Conclusions
Nanotechnology provides a variety of interesting and
promising nanostructures
Integration with CMOS will be the first step in the profitable
use of nanostructures, once process compatibility is proven
Critical issues such as reliability, stability and lifetime are
going to become routine and will have to be addressed at a
circuit/architecture level
Novel circuits and architectures are going to be needed for a
full exploitation of nanocomponents
Institute for Nanoelectronicswww.nano.ei.tum.de
Teaching activities Lectures
NANOLECTRONICS (6. Sem. Bach. EI)
NANOSYSTEMS (1. Sem. MSc. EI,)
MOLECULAR ELECTRONICS (2. Sem. MSc. EI)
COMPUTATIONAL METHOD IN NANOELECTRONICS (2. Sem. MSc. EI)
SEMICONDUCTOR QUANTUM DEVICES (1. Sem. MSc. EI)
NANOTECHNOLOGY (1. Sem. MSc. EI, MSc. “Microwave Engineering”,
MSc “Communication Engineering”, MSc. in “Engineering Physics”)
Labs
Nanoelectronics (6. Sem. Bach. EI.)
Simulation of semiconductor nanostructures (MSc. EI)
Characterization and simulation of molecular devices (MSc. EI.)
Design of molecular circuits (MSc. EI)
Nanobioelectronics (MSc. EI)
Institute for Nanoelectronicswww.nano.ei.tum.de
International Initiatives
Joint Bachelor Program in EE with Georgiatech
Joint Master Program NTU/TUM on "Integrated Circuit Design„
Joint Master Program NTU/TUM on „Microelectronics„
Int. Master in „Communication Engineering“ (section on „Comunication Electronics“)
Int. Master in „Nanoscience and Nanoengineering“ (starting 2011)
Joint Ph.D. Program (BI-NATIONALLY SUPERVISED DOCTORAL THESIS) with University of Trento (Italy)
Joint Ph.D. Program (BI-NATIONALLY SUPERVISED DOCTORAL THESIS) with Universita‘ delle Marche (Italy)
Research cooperations with several european and international companies, research labs and universities (STMicroelectronics, IBM, Arizona State University, MIT, Notre Dame University, University of Illinois U.C., Nanyang Technological University, Universita‘ di Roma „Tor Vergata“, Universita‘ di Modena, …)
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Bachelor EI (since Oct. 2008)
Menu „Nanoelectronics“ (30 Credits; 5. and 6. Semester)
Nanoelectronics 5 Sem 6 CreditsCMOS-Technologie 5 Sem 3 Credits Schaltungssimulation 5 Sem 3 CreditsPraktikum Elektronische Bauelemente 5 Sem 3 Credits
Nanotechnology 6 Sem 6 CreditsHalbleitersensoren 6 Sem 3 CreditsOptoelektronik 6 Sem 3 CreditsProjektpraktikum Nanoelektronik
und Nanotechnologie 6 Sem 3 Credits
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MSc EI (starting Oct. 2010)
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MS Communication Engineering
Mandatory Modules Sem.
Adaptive and Array Signal Processing 1
Broadband Communication Networks 1
Digital IC Design 1
Engineering Management 1
Information Theory and Source Coding 1
Advanced Topics in IC Design 2
Electronic Design Automation 2
Mixed Signal Electronics 3
Aspects of Integrated System Technology and Design 3
Testing of Digital Circuits 3
A paid internship of 10 weeks duration in a German company is intended for the semester break between the 2nd and the 3rd semester.
Elective Modules Sem.
Nanotechnology 1
Time-Varying Systems and Computations 1
Mobile Communications 1
Mathematical Methods of Information Technology 1
Advanced MOSFETs and Novel Devices 2
Image and Video Compression 2
HW/SW Codesign 2
Nanoelectronics 2
Physical Electronics 2
Advanced Network Architectures and Services 1 2
System on Chip Solutions in Networking 2
IC Manufacturing 3
MIMO Systems 3
Optimization in Communications and Signal Processing 3
Computational Methods in Nanoelectronics 3
Advanced Network Architectures and Services 2 3
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MS MicroWave Engineering
Mandatory Courses Sem.
Electromagnetics 1 1
Fundamentals in Communication Theory 1
Microwave Semiconductor Devices 1
Quantum Nanoelectronics 1
Integrated Systems 1
Electromagnetics 2 2
Advanced MOSFETs and Novel Devices 2
Nanoelectronics 2
Selected Topics in Nanotechnology 2
Electromagnetics 3 3
Nanotechnology 3
Computational Methods in Nanoelectronics 3
Seminar on Topics in RF-Engineering and Nanoelectronics
3
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MS Engineering Physics
Among the elective lectures in Material Science students can choose , among others,
“Semiconductor Nanoscience and Technology I”,“Bio- and Nanoelectronic Systems I and II”, “Introduction to surface and interface physics”,
as special physics lecture, or
“Molecular Electronics”, “Nanotechnology”, “Selected Topics in Nanotechnology”
as engineering lecture
Energy Science: provide a specialized education in Energy Science with lectures ranging from fission, fusion to all kinds of renewable energies.
Materials Science: dedicated education in Materials Science including lectures in bio-physics, low dimensional electronic systems, quantum optics, solid state spectroscopy and many more.
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International MS Programs in Singapore
A series of Joint International MS Programs are offered by TUM together with NTU :
Microelectronics Integrated Circuit Design Aerospace Engineering (from Aug. 2009)
and with NUS
Industrial Chemistry
in Singapore
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NTU-TUM MS Microelectronics
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NTU-TUM MS Microelectronics
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NTU-TUM MS Integrated Circuit Design
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PCP/SPUR Programme
Master Programmes under Professional Conversion Programme (PCP) with SPUR (Skills Programme for Upgrading and Resilience) funding
GIST and the Singapore Workforce Development Agency (WDA) are jointly rolling out four Master of Science programmes targeted at Professionals, Managers, Executives, Technicians (PMETs) who would like to convert or upgrade their skills under the Professional Conversion Programme (PCP). This coming May, the Master of Science in Integrated Circuit Design will commence for PMETs who are seeking a career in the Integrated Circuit Design industry. Trainees* need only pay net fees of *S$3210 (inclusive of GST) to get a world class education from leading Universities (NTU and TUM). Programmes which are offered under SPUR funding:
Master of Science in Industrial Chemistry TUM / NUSMaster of Science in Microelectronics TUM / NTUMaster of Science in Integrated Circuit Design TUM / NTUMaster of Science in Aerospace Engineering TUM / NTU
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MS Nanoscience and Nanoengineeringmodule name Sem ECTS
Physics for Nanoscience1 1 6
Circuit theory for Nanoscience2 1 6Materials and Chemistry for Nanoscience1 1 6
Signal processing2 1 6
Fundamental IT skills 1 3
Block Practical 1 3
Seminar 1 3
Electronics Lab 1 3
Management / Soft skills 1 6
Nanoscience 2 6
Advanced condensed matter 2 4Computational methods in nanoscience
2 5
Nano biotechnology 2 3
Intro. Organic Chemistry 2 3
Elective Modules 2 6
Advanced nanoscience seminar 2 3
Nanosystems 3 3
Nanoelectronics 3 3
Nanophotonics 3 3
Elective Modules 3 6
Project work / Internship 3 15
Masters Thesis 4 30
• International MS program in English • Initial selection of candidates
In the first semester, 12 credits will be devoted to the attempt of providing a common background for all. Thus, students with a Bachelor in Physics will be required to take two modules of basics engineering courses (2 in the table) while students with an EI Bachelor will take two basic physics modules (1 in the table).
Modules with 3 ECTS corresponds to a standard course with 2 hours lecture and 1 hour recitation. Modules with larger numbers of credits combine lectures with practical works, seminars or, in some cases, homework.
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Conclusions
Nanoelectronics is slowly entering the EE curricula at both
Bachelor and MS level
Interdepartment and interfaculty curricula are necessary,
especially between EE, Physics, Material Science, Chemistry and
Biology
Very interesting opportunities offered by international
cooperations
Great potentials for nanoelectronics in the areas of energy,
medicine and automation, both for teaching and research
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Thanks for your attention!
48
AcknowledgmentsCentre forNanotechnology andNanomaterials
Institute for Nanoelectronics
nano
MDM
UTor Vergata