high power and energy femtosecond lasers · 2020. 2. 24. · high power and energy femtosecond...

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WWW.LIGHTCON.COM | [email protected] | REV. 200114 4 AUTOCORRELATORS | SPECTROMETERS | OPTICAL PARAMETRIC AMPLIFIERS | HARMONICS GENERATORS | OSCILLATORS | ULTRAFAST LASERS PHAROS is a femtosecond laser system combining millijoule pulse energies and high average powers. PHAROS features a mechanical and optical design optimized for industrial applications such as precise material processing. Compact size, an integrated thermal stabilization system, and sealed design allow PHAROS integration into machining workstations. Laser diodes pumping Yb medium significantly reduces maintenance costs and provides a long laser lifetime. Soſtware tunability of PHAROS allows the system to cover applications normally requiring different classes of laser. Tunable parameters include pulse duration (190 fs – 20 ps), repetition rate (single pulse to 1 MHz), pulse energy (up to 2 mJ) and average power (up to 20 W). Its power level is sufficient for most material processing applications at high machining speeds. The built-in pulse picker allows convenient control of the laser output in pulse-on-demand mode. PHAROS compact and robust optomechanical design features stable laser operation across varying environments. FEATURES 190 fs – 20 ps tunable pulse duration 2 mJ maximum pulse energy 20 W output power 1 kHz – 1 MHz tunable base repetition rate Pulse picker for pulse-on-demand operation Rugged industrial grade mechanical design Automated harmonics generators (515 nm, 343 nm, 257 nm, 206 nm) Optional CEP stabilization Possibility to lock oscillator to external clock High Power and Energy Femtosecond Lasers Typical spectrum of PHAROS Typical pulse duration of PHAROS Pulse energy vs base repetition rate for PHAROS 1.0 0.6 0.8 0.4 Relative spectral intensity, a.u. 0.2 1010 1015 1020 1025 1030 1035 1040 0.0 Wavelength, nm Spectral FWHM = 8.2 nm 1.0 0.8 0.6 Delay, fs 0.4 -1000 -1500 -500 0 500 1000 1500 0.2 0.0 Gaussian fit 223 fs Intensity, a.u. Pulse energy, μJ Repetition rate, kHz 1000 100 10 10 1 100 1000 PHAROS PH1-SP-1mJ / 6 W, 1 mJ PHAROS PH2-SP-20W-2mJ / 20 W, 2 mJ PHAROS PH1-10W / 10 W, 200 μJ PHAROS PH1-20W / 20 W, 400 μJ

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  • WWW.LIGHTCON.COM | [email protected] | REV. 2001144

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    PHAROS is a femtosecond laser system combining millijoule pulse energies and high average powers. PHAROS features a mechanical and optical design optimized for industrial applications such as precise material processing. Compact size, an integrated thermal stabilization system, and sealed design allow PHAROS integration into machining workstations.

    Laser diodes pumping Yb medium significantly reduces maintenance costs and provides a long laser lifetime. Software tunability of PHAROS allows the system to cover applications

    normally requiring different classes of laser. Tunable parameters include pulse duration (190 fs – 20 ps), repetition rate (single pulse to 1 MHz), pulse energy (up to 2 mJ) and average power (up to 20 W). Its power level is sufficient for most material processing applications at high machining speeds. The built-in pulse picker allows convenient control of the laser output in pulse-on-demand mode. PHAROS compact and robust optomechanical design features stable laser operation across varying environments.

    FEATURES ᰋ 190 fs – 20 ps tunable pulse duration ᰋ 2 mJ maximum pulse energy ᰋ 20 W output power ᰋ 1 kHz – 1 MHz tunable base repetition rate ᰋ Pulse picker for pulse-on-demand operation ᰋ Rugged industrial grade mechanical design ᰋ Automated harmonics generators

    (515 nm, 343 nm, 257 nm, 206 nm)

    ᰋ Optional CEP stabilization ᰋ Possibility to lock oscillator to external clock

    High Power and Energy Femtosecond Lasers

    Typical spectrum of PHAROS

    Typical pulse duration of PHAROSPulse energy vs base repetition rate for PHAROS

    1.0

    0.6

    0.8

    0.4

    Re

    lati

    ve s

    pe

    ctra

    l in

    ten

    sity

    , a.u

    .

    0.2

    1010 1015 1020 1025 1030 1035 10400.0

    Wavelength, nm

    SpectralFWHM = 8.2 nm

    1.0

    0.8

    0.6

    Delay, fs

    0.4

    -1000-1500 -500 0 500 1000 1500

    0.2

    0.0

    Gaussian fit223 fs

    Inte

    nsi

    ty, a

    .u.

    Pu

    lse

    en

    erg

    y, µ

    J

    Repetition rate, kHz

    1000

    100

    10

    101 100 1000

    PHAROS PH1-SP-1mJ / 6 W, 1 mJ

    PHAROS PH2-SP-20W-2mJ / 20 W, 2 mJ

    PHAROS PH1-10W / 10 W, 200 µJ

    PHAROS PH1-20W / 20 W, 400 µJ

  • REV. 200114 | [email protected] | WWW.LIGHTCON.COM 5

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    SSPECIFICATIONSModel ¹⁾ PH1-10W PH1-15W PH1-20W PH1-SP-1mJ PH2-SP-20W-2mJ

    OUTPUT CHARACTERISTICMax. average power 10 W 15 W 20 W 6 W 20 W

    Pulse duration (assuming Gaussian pulse shape) < 290 fs < 190 fs

    Pulse duration range 290 fs – 10 ps (20 ps on request) 190 fs – 10 ps (20 ps on request)

    Max. pulse energy > 0.2 mJ or > 0.4 mJ > 1 mJ > 2 mJ

    Beam quality TEM₀₀ ; M² < 1.2 TEM₀₀ ; M² < 1.3

    Base repetition rate ²⁾ 1 kHz – 1 MHz

    Pulse selection Single-Shot, Pulse-on-Demand, any base repetition rate division

    Centre wavelength 1028 nm ± 5 nm 1033 nm ± 5 nm

    Output pulse-to-pulse stability ³⁾ < 0.5 % rms over 24 hours

    Power stability < 0.5 % rms over 100 h

    Pre-pulse contrast < 1 : 1000

    Post-pulse contrast < 1 : 200

    Polarization Linear, horizontal

    Beam pointing stability < 20 μrad/°C

    OPTIONAL EXTENSIONSOscillator output Optional. Please contact [email protected] for more details or customized solutions

    Typical output 1 – 6 W, 50 – 250 fs, ~1035 nm, ~ 76 MHz, simultaneously available

    Harmonics generator Integrated, optional (see page 8)

    Output wavelength 515 nm, 343 nm, 257 nm, 206 nm

    Optical parametric amplifier Integrated, optional (see page 15)

    Tuning range 640 – 4500 nm

    BiBurst mode Tunable GHz and MHz burst with burst-in-burst capability, optional (see page 9)

    GHz-mode (P)

    Intra burst pulse separation ⁴⁾ ~ 200 ± 40 ps ~ 500 ± 40 ps

    Max no. of pulses ⁵) 1 . . 25 1 . . 10

    MHz-mode (N)

    Intra burst pulse separation ~ 16 ns

    Max no. of pulses 1 . . 9, (7 with FEC)

    PHYSICAL DIMENSIONSLaser head ⁶⁾ 670 (L) × 360 (W) × 212 (H) mm 730 (L) × 419 (W) × 233 (H) mm

    Rack for power supply & chiller 642 (L) × 553 (W) × 673 (H) mm PS integrated in the laser head

    UTILITY REQUIREMENTSElectric 110 V AC, 50 – 60 Hz, 20 A or 220 V AC, 50 – 60 Hz, 10 A

    Operating temperature 15 – 30 °C (air conditioning recommended)

    Relative humidity < 80 % (non condensing)

    DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION

    CLASS 4 LASER PRODUCT

    ¹⁾ More models are available on request.²⁾ Some particular repetition rates are software denied due to system design.³⁾ Under stable environmental conditions.⁴⁾ Custom spacing on request.⁵⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.⁶⁾ Dimensions might increase for non-standard laser specifications.

  • WWW.LIGHTCON.COM | [email protected] | REV. 2001146

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    Am

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    t tem

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    ture

    , °C

    Out

    put p

    ower

    , W

    Ambient temperatureOutput power, RMS=0.12%

    Time, h

    0 55 5.92

    10 5.94

    15 5.96

    20 5.98

    25 6.00

    30 6.02

    35 6.04

    40 6.05

    10 15 20 25 30

    Beam

    dire

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    n, µ

    rad

    Tem

    pera

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    , °C

    Time, h0 5

    0 14

    12

    10

    8

    20

    -20

    -40

    -60

    16

    40 18

    60 20

    80 22

    100 24

    120 26

    140 28

    10 15 20 25

    Temperature

    HorizontalVertical

    PHAROS output power with power lock enabled under unstable environment

    Ou

    tpu

    t p

    ow

    er,

    W

    Time, h

    20.06

    20.08

    20.10

    20.12

    20.14

    20.16

    20.18

    1000 200 300 400 500 600

    RMS < 0.03%

    Long term stability graph of PHAROS

    Ou

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    40

    38

    36

    34

    32

    Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019

    8

    7

    6

    5

    4Ou

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    WP

    um

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    38

    36

    34

    32

    30

    Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

    8

    7

    6

    5

    4

    Output power of industrial PHAROS lasers operating 24/7 and current of pump diodes during the years

    1000

    800

    Wai

    st d

    iam

    eter

    , µm

    Z location, mm

    600

    400

    200

    350 400 450 500 550 600 650

    Typical M² measurement data of PHAROS

    Typical near-field beam profile of PHAROS at 200 kHz

    Typical far-field beam profile of PHAROS at 200 kHz

    STABILITY MEASUREMENTS

  • REV. 200114 | [email protected] | WWW.LIGHTCON.COM 7

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    Short term pulse-to-pulse energy stability of PHAROS lasers. 1.2×10⁷ pulses (1 min at 200 kHz),

    STD < 0.11%, peak-to-peak < 1%

    Nu

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    3×105

    2×105

    1×105

    0

    Normalized pulse energy, a.u.

    0.996 0.998 1.000 1.002 1.004

    PHAROS PH1 laser outline drawing

    0 2140

    160

    180

    200

    220

    240

    260

    280

    300

    320

    4 6 8 10Time, h

    Phas

    e st

    d (la

    st 1

    k sa

    mpl

    es),

    mra

    d

    12 14 16

    Std of all samples = 206 mrad

    PHAROS CEP stability when laser is isolated from all noticeable noise sources – vibrations, acoustics, air circulation and electrical noise. System can achieve < 300 mrad std of CEP stability over a long time scale (> 8 hours) and < 200 mrad over a short time scale (< 5 min)

    CEP stability over a short time scale

    Carrier-envelope phase (CEP) over the long period with active phase stabilization system

    CEP stability over a long time scale

    0 20

    150

    160

    170

    180

    190

    200

    210

    40 60 80 100

    Time, s

    Phas

    e st

    d (la

    st 1

    k sa

    mpl

    es),

    mra

    d

    120 140 160

    Std of all samples = 181 mrad

    0 2

    -0.50

    -0.75

    -1.00

    -0.25

    0.00

    0.25

    0.50

    0.75

    1.00

    4 6 8 10

    Time, h

    Car

    rier

    Env

    elop

    e Ph

    ase,

    rad

    12 14

    σ = 206 mrad

    70

    670

    360

    212

    5420 30 168

    (74)(104)

    (272)

    1030 nm output

    without H

    1030 nm output

    with Auto H

    Auto 2H Auto 3H, 4H515 nm 343, 257 nm

    OUTLINE DRAWINGS

  • WWW.LIGHTCON.COM | [email protected] | REV. 2001148

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    PHAROS laser can be equipped with automated harmonics modules. A selection of fundamental (1030 nm), second (515 nm), third (343 nm), fourth (257 nm) or fifth (206 nm) harmonic outputs are available through software control.

    3H output stability

    4H output stabilityPHAROS harmonics energy vs pulse repetition rate

    SPECIFICATIONSModel 2H 2H-3H 2H-4H 4H-5H

    Output wavelength 1) (automated selection)

    1030 nm 515 nm

    1030 nm 515 nm 343 nm

    1030 nm 515 nm 257 nm

    1030 nm 257 nm 206 nm

    Input pulse energy 20 – 2000 μJ 50 – 2000 μJ 2) 20 – 2000 μJ 2) 200 – 1000 μJ

    Pump pulse duration 190 – 300 fs

    Conversion efficiency > 50 % (2H) > 50 % (2H) > 25 % (3H) > 50 % (2H)

    > 10 % (4H) 3)> 10 % (4H) 3) > 5 % (5H) 4)

    Beam quality (M²) ≤ 400 μJ pump

  • REV. 200114 | [email protected] | WWW.LIGHTCON.COM 9

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    Tunable GHz and MHz burst with burst-in-burst capability

    PHAROS and CARBIDE 40W (CB3) have an option for tunable GHz and MHz burst with burst-in-burst capability – called BiBurst. The distance between burst packet groups is called nanosecond burst, N (MHz-Burst). The distance between sub-pulses in the group is called picosecond burst, P (GHz-Burst).

    In single pulse mode, one pulse is emitted at a time at some fixed frequency. In burst mode, the output consists of several picosecond burst packets each separated by an equal time period between each packet. Each packet can contain a number of sub-pulses which are also separated by an equal time period between each pulse.

    High pulse energy femtosecond laser with flexible BiBurst functionality brings new production capabilities to high-tech manufacturing industries such as consumer electronics, integrated photonic chip manufacturing, stent cutting, surface functionalization, future displays manufacturing and quantum computing.

    BiBurst material fabrication areas cover:

    ᰋ brittle material drilling and cutting ᰋ deep engraving ᰋ selective ablation ᰋ transparent materials volume modification ᰋ hidden marking ᰋ surface functional structuring.

    SPECIFICATIONSModel CARBIDE-CB3 (40 W) PHAROS PHAROS-SP

    P, GHz-modeIntra burst pulse separation ¹⁾ ~ 440 ± 40 ps ~ 200 ± 40 ps ~ 500 ± 40 ps

    Max no. of pulses ²⁾ 1 . . 10 1 . . 25 1 . . 10

    N, MHz-modeIntra burst pulse separation ~16 ns

    Max no. of pulses 1 . . 10 1 . . 9, (7 with FEC) 1 . . 9, (7 with FEC)

    ¹⁾ Custom spacing on request.²⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.

    BiBurst

    1 kHz – 1 MHz carrier frequency260 fs – 10 ps tunable pulse duration

    BiBurst

    GHz-Burst

    MHz-Burst

    Adjustable number of pulses in GHz and MHz burst

    Adjustable intra-burst amplitude slope

    ns

    psfs