high power and energy femtosecond lasers€¦ · pharos is a femtosecond laser system combining...
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WWW.LIGHTCON.COM | [email protected] | REV. 2001144
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PHAROS is a femtosecond laser system combining millijoule pulse energies and high average powers. PHAROS features a mechanical and optical design optimized for industrial applications such as precise material processing. Compact size, an integrated thermal stabilization system, and sealed design allow PHAROS integration into machining workstations.
Laser diodes pumping Yb medium significantly reduces maintenance costs and provides a long laser lifetime. Software tunability of PHAROS allows the system to cover applications
normally requiring different classes of laser. Tunable parameters include pulse duration (190 fs – 20 ps), repetition rate (single pulse to 1 MHz), pulse energy (up to 2 mJ) and average power (up to 20 W). Its power level is sufficient for most material processing applications at high machining speeds. The built-in pulse picker allows convenient control of the laser output in pulse-on-demand mode. PHAROS compact and robust optomechanical design features stable laser operation across varying environments.
FEATURES ᰋ 190 fs – 20 ps tunable pulse duration
ᰋ 2 mJ maximum pulse energy
ᰋ 20 W output power
ᰋ 1 kHz – 1 MHz tunable base repetition rate
ᰋ Pulse picker for pulse-on-demand operation
ᰋ Rugged industrial grade mechanical design
ᰋ Automated harmonics generators (515 nm, 343 nm, 257 nm, 206 nm)
ᰋ Optional CEP stabilization
ᰋ Possibility to lock oscillator to external clock
High Power and Energy Femtosecond Lasers
Typical spectrum of PHAROS
Typical pulse duration of PHAROSPulse energy vs base repetition rate for PHAROS
1.0
0.6
0.8
0.4
Re
lati
ve s
pe
ctra
l in
ten
sity
, a.u
.
0.2
1010 1015 1020 1025 1030 1035 10400.0
Wavelength, nm
SpectralFWHM = 8.2 nm
1.0
0.8
0.6
Delay, fs
0.4
-1000-1500 -500 0 500 1000 1500
0.2
0.0
Gaussian fit223 fs
Inte
nsi
ty, a
.u.
Pu
lse
en
erg
y, µ
J
Repetition rate, kHz
1000
100
10
101 100 1000
PHAROS PH1-SP-1mJ / 6 W, 1 mJ
PHAROS PH2-SP-20W-2mJ / 20 W, 2 mJ
PHAROS PH1-10W / 10 W, 200 µJ
PHAROS PH1-20W / 20 W, 400 µJ
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SSPECIFICATIONSModel ¹⁾ PH1-10W PH1-15W PH1-20W PH1-SP-1mJ PH2-SP-20W-2mJ
OUTPUT CHARACTERISTICMax. average power 10 W 15 W 20 W 6 W 20 W
Pulse duration (assuming Gaussian pulse shape) < 290 fs < 190 fs
Pulse duration range 290 fs – 10 ps (20 ps on request) 190 fs – 10 ps (20 ps on request)
Max. pulse energy > 0.2 mJ or > 0.4 mJ > 1 mJ > 2 mJ
Beam quality TEM₀₀ ; M² < 1.2 TEM₀₀ ; M² < 1.3
Base repetition rate ²⁾ 1 kHz – 1 MHz
Pulse selection Single-Shot, Pulse-on-Demand, any base repetition rate division
Centre wavelength 1028 nm ± 5 nm 1033 nm ± 5 nm
Output pulse-to-pulse stability ³⁾ < 0.5 % rms over 24 hours
Power stability < 0.5 % rms over 100 h
Pre-pulse contrast < 1 : 1000
Post-pulse contrast < 1 : 200
Polarization Linear, horizontal
Beam pointing stability < 20 µrad/°C
OPTIONAL EXTENSIONSOscillator output Optional. Please contact [email protected] for more details or customized solutions
Typical output 1 – 6 W, 50 – 250 fs, ~1035 nm, ~ 76 MHz, simultaneously available
Harmonics generator Integrated, optional (see page 8)
Output wavelength 515 nm, 343 nm, 257 nm, 206 nm
Optical parametric amplifier Integrated, optional (see page 15)
Tuning range 640 – 4500 nm
BiBurst mode Tunable GHz and MHz burst with burst-in-burst capability, optional (see page 9)
GHz-mode (P)
Intra burst pulse separation ⁴⁾ ~ 200 ± 40 ps ~ 500 ± 40 ps
Max no. of pulses ⁵) 1 . . 25 1 . . 10
MHz-mode (N)
Intra burst pulse separation ~ 16 ns
Max no. of pulses 1 . . 9, (7 with FEC)
PHYSICAL DIMENSIONSLaser head ⁶⁾ 670 (L) × 360 (W) × 212 (H) mm 730 (L) × 419 (W) × 233 (H) mm
Rack for power supply & chiller 642 (L) × 553 (W) × 673 (H) mm PS integrated in the laser head
UTILITY REQUIREMENTSElectric 110 V AC, 50 – 60 Hz, 20 A or 220 V AC, 50 – 60 Hz, 10 A
Operating temperature 15 – 30 °C (air conditioning recommended)
Relative humidity < 80 % (non condensing)
DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
¹⁾ More models are available on request.²⁾ Some particular repetition rates are software denied due to system design.³⁾ Under stable environmental conditions.⁴⁾ Custom spacing on request.⁵⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.⁶⁾ Dimensions might increase for non-standard laser specifications.
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Am
bien
t tem
pera
ture
, °C
Out
put p
ower
, W
Ambient temperatureOutput power, RMS=0.12%
Time, h
0 55 5.92
10 5.94
15 5.96
20 5.98
25 6.00
30 6.02
35 6.04
40 6.05
10 15 20 25 30
Beam
dire
ctio
n, µ
rad
Tem
pera
ture
, °C
Time, h0 5
0 14
12
10
8
20
-20
-40
-60
16
40 18
60 20
80 22
100 24
120 26
140 28
10 15 20 25
Temperature
HorizontalVertical
PHAROS output power with power lock enabled under unstable environment
Ou
tpu
t p
ow
er,
W
Time, h
20.06
20.08
20.10
20.12
20.14
20.16
20.18
1000 200 300 400 500 600
RMS < 0.03%
Long term stability graph of PHAROS
Ou
tpu
t p
ow
er,
WP
um
p c
ur r
en
t, A
40
38
36
34
32
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019
8
7
6
5
4Ou
tpu
t p
ow
er,
WP
um
p c
urr
en
t, A
38
36
34
32
30
Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018
8
7
6
5
4
Output power of industrial PHAROS lasers operating 24/7 and current of pump diodes during the years
1000
800
Wai
st d
iam
eter
, µm
Z location, mm
600
400
200
350 400 450 500 550 600 650
Typical M² measurement data of PHAROS
Typical near-field beam profile of PHAROS at 200 kHz
Typical far-field beam profile of PHAROS at 200 kHz
STABILITY MEASUREMENTS
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Short term pulse-to-pulse energy stability of PHAROS lasers. 1.2×10⁷ pulses (1 min at 200 kHz),
STD < 0.11%, peak-to-peak < 1%
Nu
mb
er
of
pu
lse
s4×105
3×105
2×105
1×105
0
Normalized pulse energy, a.u.
0.996 0.998 1.000 1.002 1.004
PHAROS PH1 laser outline drawing
0 2140
160
180
200
220
240
260
280
300
320
4 6 8 10Time, h
Phas
e st
d (la
st 1
k sa
mpl
es),
mra
d
12 14 16
Std of all samples = 206 mrad
PHAROS CEP stability when laser is isolated from all noticeable noise sources – vibrations, acoustics, air circulation and electrical noise. System can achieve < 300 mrad std of CEP stability over a long time scale (> 8 hours) and < 200 mrad over a short time scale (< 5 min)
CEP stability over a short time scale
Carrier-envelope phase (CEP) over the long period with active phase stabilization system
CEP stability over a long time scale
0 20
150
160
170
180
190
200
210
40 60 80 100
Time, s
Phas
e st
d (la
st 1
k sa
mpl
es),
mra
d
120 140 160
Std of all samples = 181 mrad
0 2
-0.50
-0.75
-1.00
-0.25
0.00
0.25
0.50
0.75
1.00
4 6 8 10
Time, h
Car
rier
Env
elop
e Ph
ase,
rad
12 14
σ = 206 mrad
70
670
360
212
5420 30 168
(74)(104)
(272)
1030 nm output
without H
1030 nm output
with Auto H
Auto 2H Auto 3H, 4H515 nm 343, 257 nm
OUTLINE DRAWINGS
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PHAROS laser can be equipped with automated harmonics modules. A selection of fundamental (1030 nm), second (515 nm), third (343 nm), fourth (257 nm) or fifth (206 nm) harmonic outputs are available through software control.
3H output stability
4H output stabilityPHAROS harmonics energy vs pulse repetition rate
SPECIFICATIONSModel 2H 2H-3H 2H-4H 4H-5H
Output wavelength 1) (automated selection)
1030 nm 515 nm
1030 nm 515 nm 343 nm
1030 nm 515 nm 257 nm
1030 nm 257 nm 206 nm
Input pulse energy 20 – 2000 µJ 50 – 2000 µJ 2) 20 – 2000 µJ 2) 200 – 1000 µJ
Pump pulse duration 190 – 300 fs
Conversion efficiency > 50 % (2H) > 50 % (2H) > 25 % (3H)
> 50 % (2H) > 10 % (4H) 3)
> 10 % (4H) 3) > 5 % (5H) 4)
Beam quality (M²) ≤ 400 μJ pump < 1.3 (2H), typical < 1.15 < 1.3 (2H), typical < 1.15
< 1.4 (3H), typical < 1.2 < 1.3 (2H), typical < 1.15
n/a (4H)n/a
Beam quality (M²) > 400 μJ pump < 1.4 (2H) < 1.4 (2H)
< 1.5 (3H)< 1.4 (2H) n/a (4H)
FEATURES ᰋ 515 nm, 343 nm, 257 nm and 206 nm
ᰋ Output selection by software
ᰋ Mounts directly on a laser head and integrated into the system
ᰋ Rugged industrial grade mechanical design Harmonics generator module attached to PHAROS
DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
Automated Harmonics Generators
Harmonics generators are designed to be used in industrial applications where a single output wavelength is desired.
Modules are mounted directly on the output of the laser and integrated into the system.
¹⁾ Depends on pump laser model.²⁾ High energy versions are available, please contact Light Conversion for specifications.³⁾ Max 1 W output. ⁴⁾ Max 0.15 W output.
HG | PHAROSP
uls
e e
ne
rgy,
µJ
Repetition rate, kHz
100
200
400
10
20
40
60
1
2
4
6
0.1
0.2
0.4
0.6
101 100 1000
PHAROS PH1-20W-400µJ
SH (400 µJ pump)
TH (400 µJ pump)
SH (200 µJ pump)
TH (200 µJ pump)
SH (50 µJ pump)
TH (50 µJ pump)
Ou
tpu
t p
ow
er,
W
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Time, h
1000 50 150 200 250 300
RMS = 0.27%
Ou
tpu
t p
ow
er,
W
Time, h
40 2 6 8 10 121.44
1.46
1.48
1.50
1.52
1.54
1.56
RMS = 0.23%
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Tunable GHz and MHz burst with burst-in-burst capability
PHAROS and CARBIDE 40W (CB3) have an option for tunable GHz and MHz burst with burst-in-burst capability – called BiBurst. The distance between burst packet groups is called nanosecond burst, N (MHz-Burst). The distance between sub-pulses in the group is called picosecond burst, P (GHz-Burst).
In single pulse mode, one pulse is emitted at a time at some fixed frequency. In burst mode, the output consists of several picosecond burst packets each separated by an equal time period between each packet. Each packet can contain a number of sub-pulses which are also separated by an equal time period between each pulse.
High pulse energy femtosecond laser with flexible BiBurst functionality brings new production capabilities to high-tech manufacturing industries such as consumer electronics, integrated photonic chip manufacturing, stent cutting, surface functionalization, future displays manufacturing and quantum computing.
BiBurst material fabrication areas cover:
ᰋ brittle material drilling and cutting ᰋ deep engraving ᰋ selective ablation ᰋ transparent materials volume modification ᰋ hidden marking ᰋ surface functional structuring.
SPECIFICATIONSModel CARBIDE-CB3 (40 W) PHAROS PHAROS-SP
P, GHz-modeIntra burst pulse separation ¹⁾ ~ 440 ± 40 ps ~ 200 ± 40 ps ~ 500 ± 40 ps
Max no. of pulses ²⁾ 1 . . 10 1 . . 25 1 . . 10
N, MHz-modeIntra burst pulse separation ~16 ns
Max no. of pulses 1 . . 10 1 . . 9, (7 with FEC) 1 . . 9, (7 with FEC)
¹⁾ Custom spacing on request.²⁾ Maximum number of pulses in a burst is dependent on the laser repetition rate. Custom number of pulses on request.
BiBurst
1 kHz – 1 MHz carrier frequency260 fs – 10 ps tunable pulse duration
BiBurst
GHz-Burst
MHz-Burst
Adjustable number of pulses in GHz and MHz burst
Adjustable intra-burst amplitude slope
ns
psfs
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Industrial-grade Optical Parametric Amplifier
FEATURES ᰋ Automatically tunable or fixed wavelength options
ᰋ Robust, integrated mechanical design
ᰋ Simple, user-friendly operation
ᰋ Up to 2 MHz repetition rate, down to single shot operation
ᰋ Up to 40 W pump power
ᰋ Integrated beam splitter for pump laser beam
Tunable I-OPA-TW module attached to air-cooled CARBIDE-CB5
I-OPA series of optical parametric amplifiers marks a new era of simplicity in the world of tunable wavelength femtosecond light sources. Based on 10 years of experience producing the ORPHEUS series of optical parametric amplifiers, this solution brings together the flexibility of tunable wavelength with robust industrial-grade design. The original I-OPA is a rugged module attached to our PHAROS laser, providing long term stability comparable to that of the industrial harmonics modules. The new and improved tunable version is designed to be coupled with our PHAROS and CARBIDE series femtosecond lasers and primarily intended to be used with spectroscopy or microscopy applications that demand high stability. The -HP model is targeted to be coupled with our HARPIA series as a pump beam source for ultrafast pump-probe spectroscopy. The -F model is primarily designed to be used as a light source in multiphoton microscopy devices. The -ONE model will be useful in the field of mid-IR spectroscopy, as well as other applications where higher pulse energy is required in the infrared part of the spectrum. All of these models can be used for micromachining and other
Typical I-OPA module energy conversion curves. Pump: PHAROS-10W, 100 µJ, 100 kHz
Out
put p
ower
, mW
Puls
e en
ergy
, µJ
Wavelength, nm
1200
1100
1000
900
800
700
12
11
10
9
8
7
6
5
4
3
2
1
0
600
500
400
300
200
100
0500 1000 1500 2000 2500 3000 3500 4000 4500
I-OPA-ONE signalI-OPA-ONE idlerI-OPA-HP signalI-OPA-HP idler
I-OPA
FIxed wavelength I-OPA-FW beam pointing and output power measurements under harsh environment conditions (humidity and temperature cycling)
Time, h
Beam
pos
ition
, µm
Hum
idity
, %
0.0-250
-200
-150
-100
-50
50
0
20
40
60
80
100
120
140
160
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Position XPosition YHumidity
Time, h
Beam
dire
ctio
n, µ
rad
Hum
idity
, %
0.0-500
-400
-300
-200
-100
100
0
20
40
60
80
100
120
140
160
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Direction XDirection YHumidity
Time, h
Out
put p
ower
, mW
Hum
idity
, %
0.0450
470
460
480
490
500
550
0
20
40
60
80
100
120
140
160
540
530
520
510
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Output power
Humidity
industrial applications; the tunable version suited to be the ideal R&D system, while the fixed wavelength I-OPA would be the cost-effective solution for large scale production.
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Based on ORPHEUS model ORPHEUS ORPHEUS-F ORPHEUS-ONE
Pump power Up to 40 W
Pump pulse energy 10 – 400 µJ 20 – 400 µJ
Pulse repetition rate Up to 2 MHz
Tuning range, signal 640 – 1010 nm 650 – 900 nm 1350 – 2060 nm
Tuning range, idler 1050 – 2600 nm 1200 – 2500 nm 2060 – 4500 nm
Conversion efficiency at peak, signal wavelength > 7 % @ 700 nm > 9 % @ 1550 nm
Additional options n/aSCMP: Signal pulse compressor
ICMP: Idler pulse compressor PCMP: pre-chirp dispersion compensator
n/a
Pulse bandwidth 1) 80 – 220 cm-¹ @ 700 – 960 nm 200 – 750 cm-¹ @ 650 – 900 nm 150 – 500 cm-¹ @ 1200 – 2000 nm 60 – 150 cm-¹ @ 1450 – 2000 nm
Pulse duration 2) 120 – 250 fs < 55 fs @ 800 – 900 nm < 70 fs @ 650 – 800 nm
< 100 fs @ 1200 – 2000 nm150 – 300 fs
Wavelength extension options
SHS: 320 – 505 nm SHI: 525 – 640 nm
Conversion efficiency 1.2% at peak
Contact [email protected] DFG: 4500 – 10000 nm 3)
ApplicationsMicro-machining
Microscopy Spectroscopy
Nonlinear microscopy Ultrafast spectroscopy
Mid-IR spectroscopy AFM microscopy
DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
¹⁾ I-OPA-F outputs broad bandwidth pulses which are compressed externally.²⁾ Output pulse duration depends on wavelength and pump laser pulse duration.
I-OPA-F requires pulse compressors to achieve short pulse duration.³⁾ Up to 16 µm tuning range is accessible with external Difference Frequency Generator.
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SPECIFICATIONS OF FIXED WAVELENGTH I-OPAModel I-OPA-FW-HP I-OPA-FW-F I-OPA-FW-ONE
Pump power Up to 40 W
Pump pulse energy 10 – 500 µJ 10 – 500 µJ 20 – 1000 µJ
Pulse repetition rate Up to 2 MHz
Wavelength range, signal 640 – 1010 nm 650 – 900 nm 1350 – 2060 nm
Wavelength range, idler 1050 – 2600 nm 1200 – 2500 nm 2060 – 4500 nm
Conversion efficiency at peak, signal wavelength >7 % @ 700 nm >7 % @ 700 nm > 9 % @ 1550 nm
Pulse bandwidth 1) 80 – 220 cm-¹ @ 700 – 960 nm 200 – 750 cm-¹ @ 650 – 900 nm 150 – 500 cm-¹ @ 1200 – 2000 nm 60 – 150 cm-¹ @ 1450 – 2000 nm
Pulse duration 2) 120 – 250 fs < 55 fs @ 800 – 900 nm < 70 fs @ 650 – 800 nm
< 100 fs @ 1200 – 2000 nm150 – 300 fs
ApplicationsMicro-machining
Microscopy Spectroscopy
Nonlinear microscopy Ultrafast spectroscopy
Micro-machining Mid-IR generation
COMPARISON WITH OTHER FEMTOSECOND AND PICOSECOND LASERSLaser technology Our solution HG or HIRO I-OPA-FW-F I-OPA-FW-ONE
Pulse energy at 100 kHz, using PHAROS-10W laser
Excimer laser (193 nm, 213 nm) 5H of PHAROS (205 nm) 5 µJ
n/a
n/a
TH of Ti:Sa (266 nm) 4H of PHAROS (257 nm) 10 µJ
TH of Nd:YAG (355 nm) 3H of PHAROS (343 nm) 25 µJ
SH of Nd:YAG (532 nm) 2H of PHAROS (515 nm) 50 µJ 35 µJ
Ti:Sapphire (800 nm) OPA output (750 – 850 nm) n/a 10 µJ
Nd:YAG (1064 nm) PHAROS output (1030 nm) 100 µJ
Cr:Forsterite (1240 nm) OPA output (1200 – 1300 nm)
n/a
5 µJ n/a
Erbium (1560 nm) OPA output (1500 – 1600 nm) 3 µJ 15 µJ
Thulium / Holmium (1.95 – 2.15 μm) OPA output (1900 – 2200 nm) 2 µJ 10 µJ
Other sources (2.5 – 4.0 μm) OPA output 1 – 5 µJ
Note that the pulse energy scales linearly in a broad range of pump parameters. For example, a PHAROS PH1-20 laser at 50 kHz (400 µJ energy) will increase the output power twice, and the pulse energy 4 times compared to the reference table above. The pulse duration at the output is <300 fs in all cases. The OPA output is not limited to these particular ranges of operation, it is continuously tunable as shown in energy conversion curves.
Fixed wavelength I-OPA in comparison to tunable version or standard ORPHEUS line devices lacks only computer-controlled wavelength selection. On the other hand, in-laser mounted design provides mechanical stability and eliminates the effects of air-turbulence ensuring stable long-term performance and minimizing energy fluctuations.
Fixed wavelength I-OPA-FW module attached to PHAROS
DANGER: VISIBLE AND/OR INVISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT, REFLECTED OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
¹⁾ I-OPA-F outputs broad bandwidth pulses which are compressed externally.²⁾ Output pulse duration depends on wavelength and pump laser pulse duration.
I-OPA-F requires external pulse compressors to achieve short pulse duration.
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Outline drawing and output ports of CARBIDE-CB5 with tunable I-OPA-TW-HP
Outline drawing and output ports of CARBIDE-CB3 with tunable I-OPA-TW-HP
421
19
4
12
5 17
6
68
16
0
68
350
Fundamental (1030 nm) Fundamental (1030 nm)OPA output
24
630
773
143
86
108
PHAROS with fixed wavelength I-OPA-FW-F and compressors for signal and idler
Output ports of Pharos with fixed wavelength I-OPA-FW
691
1070
430
85(39) 62 30 30 114
IdlerSignal
Residual OPA pump (515 nm or 1030 nm)
Fundamental (1030 nm)
Optional Uncompressed Fundamental (for SHBC)
125
70
212
421773
86
108
143350
24
19
4 16
0
12
5 18
8
68
OPA outputFundamental (1030 nm)
Fundamental (1030 nm)
OUTLINE DRAWINGS
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SEXAMPLES OF INDUSTRIAL APPLICATIONS
Multi-pass, cadmium tungstate cutting. No cracks. All thermal trace effects eliminated. Source: Micronanics Laser Solutions Centre.
Taperless hole microdrilling in stainless steel alloys. Source: Workshop of Photonics.
Glass needle microdrilling. Source: Workshop of Photonics.
Longitudinal section of the single void. Source: “Ultrashort Bessel beam photoinscription of Bragg grating waveguides and their application as temperature sensors”, G. Zhang, G. Cheng, M. Bhuyan, C. D’Amico, Y. Wang, R. Stoian. Photon. Res. (2019).
Stent cut using CARBIDE laser. Source: Amada Miyachi America.
Various glass drilling. Source: Workshop of Photonics.
Brittle & highly thermal sensitive material cutting
Steel drillingGlass needle microdrilling
Nanodrilling in fused silica
Stainless steel stent cutting
Various type glass drilling
100 µm
700 µm
190 µm
5 µm
1 µm
163 nm
Laser beam300 µm
300 µm
2 mm
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3D milled sample in copper. Zoom in SEM image. Source: “Highly-efficient laser ablation of copper by bursts of ultrashort tuneable (fs-ps) pulses”, A.Žemaitis, P.Gečys, M.Barkauskas, G.Račiukaitis, M.Gedvilas. Scientific Reports (2019).
(a) Schematic of the laser treatment, (b) laser patterning strategy, (c) SEM image of induced LIPSS. Source: “Tribological Properties of High-Speed Uniform Femtosecond Laser Patterning on Stainless Steel”, I.Gnilitskyi, A.Rota, E.Gualtieri, S.Valeri, L.Orazi. Lubricants (2019).
SEM image of the Ti-6Al-4V (TC4) surface after irradiation with progressively laser scan. Source: “Large-Scale Fabrication of Nanostructure on Bio-Metallic Substrate for Surface Enhanced Raman and Fluorescence Scattering”, L.Lu, J.Zhang, L.Jiao, Y.Guan. Nanomaterials (2019).
3D waveguide fabricated in fused silica glass. Source: Workshop of Photonics.
Fabricated moth-eye 3-D profile image, taken by laser scanning microscope. Source: “Terahertz broadband anti-reflection moth-eye structures fabricated by femtosecond laser processing”, H.Sakurai, N.Nemoto, K.Konishi, R.Takaku, Y.Sakurai, N.Katayama, T.Matsumura, J.Yumoto, M.Kuwata-Gonokami. OSA Continuum (2019).
(a) SEM image of a fabricated LiNbO3 micro-disk resonator, (b) close up view, (c) atomic force microscope (AFM) image of micro-disk wedge, (d) optical microscope image of micro-disk resonator with different diameters. Source: “Fabrication of Crystalline Microresonators of High Quality Factors with a Controllable Wedge Angle on Lithium Niobate on Insulator”, J.Zhang, Z.Fang, J.Lin, J.Zhou, M.Wang, R.Wu, R.Gao, Y.Cheng. Nanomaterials (2019).
Milling of complex 3D surfaces Friction and wear reduction
Surface-enhanced Raman scattering (SERS) sensors fabrication
3D waveguides
Terahertz broadband anti-reflection structures
Selective Cr thin film ablation
5 µm
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(a) first-order Bragg gratings inscribed in written waveguide, (b) Resonant spectral transmission of inscribed BGW. Source: “Ultrashort Bessel beam photoinscription of Bragg grating waveguides and their application as temperature sensors”, G.Zhang, G. heng, M.Bhuyan, C.D’Amico, Y.Wang, R.Stoian. Photon. Res. (2019).
(a) Welding of transparent polymers for sealing of microfluidic devices, (b) COC welding seam (c) top view on a sealed microfluidic device. Source: “A New Approach to Seal Polymer Microfluidic Devices Using Ultrashort Laser Pulses”, G. Roth, C. Esen and R. Hellmann. JLMN-Journal of Laser Micro/Nanoengineering (2019).
Various 3D structures fabricated in SZ2080 polymer using multi-photon polymerization. Source: Workshop of Photonics.
Various 3D structures fabricated in SZ2080 polymer using multi-photon polymerization – nanophotonic devices, microoptics, micromechanics. Source: Femtika.
Various structures fabricated in fused silica glass. Source: Femtika.
Form induced birefringence-retardance variation results in different colors in parallel polarized light. Source: Workshop of Photonics.
Bragg grating waveguide (BGW) writing
Lab-on-chip channel ablation and welding
3D free shape multi-photon polymerization
3D micro printing using multi-photon polymerization
3D glass etching
Birefringent glass volume modifications
5 µm
100 µm
300 µm
50 µm
400 µm 200 µm
100 µm
10 µm
10 µm
10 µm
40 µm
200 µm1 mm
Welding seam
PressurePressure
Top chip
Bottom chip
Focusing lens
USP-Laser beam
Microfluidicstructure
-50
-60
-70
-80
-90
1549.5 1550.0
Wavelength, nm
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1550.5 1551.0
ba