fit [riler.] ga,rrw +,{s{ hCI-Li r{ -u }ot € Sat'"o : Lq{ Elr e

CeeqsJ S*$: H€HS T€-qJrn.pt+saQ. P. Code : 731501

3 Hours lu{ax Marks: B0

N.B.

1) Q. No. 1 is comPulsory.

2) Attempt any three out of remaining questions. 50^Da

3) Assume any suitable data wherever required but justify the same ,.)'a Give few examples of MEMS device which are characterized by sensors and ,O +*

actuators. af\'b Explain the sacrificial layer and its role in fabrication of MEMS devices

+tr=c What are the characteristics of Micro-heatef bY-d ln case of photolithography, Compare the two types of photo-resist used q-Y-

\

a Discuss the process of photolithography. Mention the types of photolitlpglaPhV 10

suitable for at least two MEMS devices with justification. *'b Discuss selection of material based on applicafrons. Support yor-r$Yswer Oy 10'.(-

considenng suitable example. {t/sl a A 30 pm thick membrane is needed for a pressure sensorfryplication. Calculate 10

the size of the mask opening W needed for the V groqd)t the"full wafer

thickness is 600 pm using ..-'r",*r,.lr.n iO ,Offiing below the siliconrN

<l oo> surface. d+"b -xplain Dry etching & Wet etching in fabricffiriprocess of MEMS devices- 10

, \./: a lescnbe tne representative process ftol,f*or fabricating the ink jet printer head 10

:; -e,r,1etr-Fackard. Also explain tnq&Erating principle of this MEMS device in6v

..'.2 ()": lri:r-enr.reie between bulk.n6fdrf""" micromachining for fabrication of MEMS 10

:e'-' i:es v.'i:n suitabl" u*r,rg$*

: z S:a:e vanous Chemic5(l9apor Deposition Techniques. Explain in brief the 10

:e:nniques of ChemlCatVapor Deposition for MEMS device fabrication-

: lxptain transOuqifr pertaining to microfilm strain gauge. State the factors that 1O

:al to thin filgpYess

' ,','iite a shcfiote on (anY three) 20

,,tV: :nciolit{b}raphy(Compare major types of exposure system)

: r no{rb-bonding

: ?.eiiability of MEMs devices.-,,.

: .- (ppiications of I\4EMS in Biomedical lnstrumentation

+r*r

/ts/a\

**=,tC

-qs

&E[- €TR{ clc(s ga,"o@ l*l , r*'J t-tar,y zolq

Ai., .t- OG-(a ; salslt eE'r--f#) t

Q.P. Code : 733701

(3 Hours) tTotall{arks:80

N.B.: (1) Question No. 1 is compulsory. *SO

@ Attempt any Three from the remaining' E(3) Figures to the right indicate full marks. ..,<}(4) Assume suitable data wherever required. oF

j\'

1. Attempt any Four from the following : .*ft 20

(a) Draw and describe ATM cell in detail ' ;,f(b)ExplainSONETframeformatwithneatdiagram.+'(c) Describe the term DMZ. S'(d) \\&at is the need of DWDM ? Explain its workingg$?.inr..(e) Draw and explain different states of devices in Bl{dtooth.

rQ-2. (a)

(b)

Describe ubrquitous and hierarchical access and cq4Pare them.\v

Wift the neat diagram, explain frame format of Frarffielay, How congestion,*r-

1l]

1S

T{}

t{}

10

t0

1fi

rfi

?tl

3. (a)

{b)

conffol is irnpleln*rlted in it.t\(,/ l\\

R*>

r'ts+

Explain Bluetocth Fr*tocsl stask- k+1

Explain ATM protoc*l architecture in4ffiil.#*

4. ta) DsBq, and explain IEEE 802.15S*.-WPAN Device architecture'(/ - - ---i-:-- r^rr^---:.^- 1^e^ .(b) Wi& respect to network *%8Hm-rrt, explain following terms :

(l) Documentation .$(?) OAM&P .vP

- q\"

-i- (al Erptain network l$rity threats and network security safeguards.

tbl qlh* is firewat[ffiat are the capabilities and limitation of firewall ? Discuss

different qrpqddf frrewal l.

*\o$6. S'rite a s[gt- note on AnY F'our :

(all$I\'Ar

-SY Role of VCI and VPI in ATM

"- : S\\{PTh!S- (d) Steps for nrrnpleting the Ac*ess F{11,U Design

_d,-d I

"$\*

{e} Packet filtcring

Be -LETRX) / cec," I s*rr-i-TE lp1 t nej tE

5\rb:' I'1 L Daltr

QP

f 3 Hours)

.*.$ TrunkingandG0s\'r,lr h{,,-1^iIi+', .,nA,.a.^rf'(d) Mobilify and resource rnanagement in CDMA

.x'

-lN.B.: (l) Question No. L is compulsory. -:'

(2) Attempt any three questions out of the remaining five questions. _,.t:(-)

1. Ansrver the following:- :.0-.--

(a) Explain the soft, softer and soft-softer handoff. ,q=(b) Explain umbrella cell approach in cellular system Ji'(c) ExplaintheservicesandfeaturesofGSM. 5-(d) Discusstheneedfor3Gcellularnetworks. ^;f\e

-\.2. (a) ExplaintheUMTSnetworkarchitectureindetailwithinterfaces. .rC' 10

(b) Explain the CDMA 2000 technotogies. .ii" rotv" 10

i r,a) Explain the frame structure forGSM. '

tf 10

ib) ErplainthefollowingforGsM: \v(i) Diagonal interleaving :C 2

tii) Ciphering ,4f; 2

{iii) SI]r{ -9- 2

(ir ) h4SI number J)' 2

(r'l Short }{essage Service (SMS) t<r' .2

O.- iar Explainthe-lGLTEarchitecturewithangqfoockdiagram. 10

,i r Drscuss \lobiie tP in detail ^1|

l0

j : ; \\-ith a neat block diagram explain@Yforward kaflic channel processing in COMA. 10

r I Consider a cellular system in rry$ldhthe total available voice channels to handle 10

raft-rc are 480. The area ofS#'cell is Ssq.km and the total coverage arcaof the

si'stem is 3000 sq.km. "\r"ti) For the clusterlhe'of 7, find the no. of channels per cell, no. of clusters,

and th e systeq$ipacity.i ii ) For the c\rfti size of 4,repeat the above caiculations

r iri ) Comng[oYn the result

l.\- "\'nre 'non ffi any four: 20

ta) -\*CN' 'A-(blo\CPRS

'-* lg rnd{5

Code I 72S30S

I Total Marks :80

es le

.f ' (e) Erlang B and Erlang C system

a

.l

l*"l

-EnsL+=

H\)H

t.-

:

BE ETRx lsero m \.au -ry I rtt r,*4 d.ot6

6,,& I CrnP$ VLst -}eJ!o &dJ l$"Q.P. Code :71

(3 Hours)

Question ONE is compulsory.Solve any THREE out of remaining questions.

Draw neat and clean diagrams A+Assume suitable data if required. ^S.q'

\Vili the following circuits work as current sources? Give tfrr.o.rq$ 5 :

reason for -vour answer. .-f^f'ffmm ? "*3'

=--t F hg--

fH fH-H ^(F,+I

List down the performance parameter* of $ffi and explain trade offbetween them. -(}-Calculate the pole associated with the.ffre X shown in the followingfigure. Assume R*: 1K8, Co:O.lf$ andA: 10.

,()"96*

jc:

r d) Draw *O :5F

'the floor plan for a possible mixed signal chip.

. 2. (a) Show ls#:"*o based implementation of temperature independent' bandg{}-reference and various issues involved thereof.

(b) fgq,u.-o**on source stage with diode connected load if the variation

_$tq: (g*/g*) with the output voltage is neglected then prove that the

<SAain is independent of bias currents and voltages.;,.F

*r-Fr,f.^&' TURN OVER

^Cr+\

frlos l*u9702

[Total Marks

N.B.: (1)

(2)

(3)

(4)

1 (a)

:80

10

/f\t*Y

n/\

{l/

{b}

{c} 5

T-*

a

o

,\

)

{c)

2:Assuming 1, : T: 0, calculate the smalt signal gain of the circuit shown: 5

*O\"-, .,Y ='tfms

\vFsI .;,+

JilHo** .st=+r

{f,

3. (a) The following circuit shown in Figure uses a resistor rarnoa@ cunent 10 O

source to define atailcurrent of lmA. Assume (W/L), a{{e510.5, ii,,Cn,

: 50 pA,,Y', Vrrr: 0'6 v', )t : T : 0 and Vor: :vr,{r"o'

(a) What is the required input CM for whicltss sustains 0.5V?

(b) Calculate Ro for a differential eaing$fl '

sm#.F-+.$

#qdl#s .#n'-Ll*w= ry r}\=Ee A'

{;r-J

%a*rt

*{r*r

H=*um

t{.*s

{, t i

.P6+ t***..+\ Fi\/-

et-- ;(b) Explarn the conceqlof switched capacitor circuit. Drarv and explain discrete 10

time integratof$long with the output wavefotm,

.c-4. (a) \\Irth tfr+-*? of small signal behaviour, prove that for differential pair l0

the msiltude of differential gain is equal to g,,R, regardiess of how

theqfputs are applied.

1b) .!fia:,ls the n.*d of ,o*pensating operational amplifiers? Explain the

a-5$o*p*rsation of two stage operational amplifiers?

.1pi Ooive an expression for the input referred noise voltage of common

-t-f source stage.

"1*^# TURFI ovER

pt2,-$

\s-

[#m

-H

#'E

*r

5.

Q.P. Code :719702

3

(a) Design two stage Operational Transconductance Amplifier (OTA) similar l5 *S

to that shown in the figure to meet the following specifications with a nl-phase margin of 60" ' .4l,)'Au, 5000 V / V Vor: 2'5 V \r: -2.5 V

-a)"Gain Bandwidth (GB) : 10MHz Cr: 10pF *qrSlew Rate (SR) > 10 Vitrs Vo* range : i 2'5 V . ;}{ICMR: -1 to 2 V P*** S 2 mW .r\}Use the follon"ing table for material and device parameters. Asqpfe

,-L.',{j

O

ParerxlEtet' n ' channel p - channel Unit {.r-

-S.? * *. 15 \:s;: 1 1 i-r 50 ps'?

[r.04 0.05 #Y--t

fuElolfage galn arldFolver dissipati$j$ven in the\emti-fuat fuElolfage galfi arldFs

are mgt b!'the designf,d *ircuit'

- 't-.,-,...ie be:,r'een fu1l-custom and semi-custom design':.H

:

ri

specifications

rL|

tt]rg

*a

(}Emlain chaGE-,lq@-PulrlP

PLL.

dat lom@the

perform*."., of"Ti:T *-3il l:r,"^,."^::::.bt Exn&{h the input-output characteristics of phase detector

r lIY,, r,