Electronic Supplementary Information

Fully Solution-Processed Transparent Electrode Based on Silver Nanowire

Composites for Perovskite Solar Cells

Areum Kim,a Hongseuk Lee,a Hyeok-Chan Kwon,a Hyun Suk Jung,b Nam-Gyu Park,c Sunho Jeongd and Jooho Moona,*

a Department of Materials Science and Engineering, Yonsei UniversitySeoul 120-749, Republic of Korea

b School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea

c School of Chemical Engineering and Department of Energy Science,Sungkyunkwan University, Suwon 440–746, Republic of Korea

d Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT),Daejeon 305-600, Republic of Korea

*Corresponding author, e-mail: jmoon@yonsei.ac.kr

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Electronic Supplementary Material (ESI) for Nanoscale.This journal is © The Royal Society of Chemistry 2015

Fig. S1 (a) X-ray diffraction spectra of CH3NH3PbI3 on a Si wafer. The peak position of AgI (002)

overlapped with the CH3NH3PbI3 peak.

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Fig. S2 Scanning electron microscopy (SEM) image of the cross-section of ITO film deposited by

the combustion sol-gel method after annealing at 500°C.

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Fig. S3 (a) X-ray diffraction patterns of ITO films fabricated using the combustion sol-gel method

as a function of annealing temperature. (b) Thermal analysis of ITO combustion sol-gel

precursor solution. Abrupt weight loss and a sharp exothermic peak were observed at 190°C.

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Table S1 Conductivity of ITO films fabricated via the combustion sol-gel method as a function of

annealing temperature before and after post annealing in H2/Ar (5/95).

Annealing Temp. Process Conductivity (S cm-1)

After annealing 62.5500°C

After H2/Ar post annealing 444.84

After annealing 2.43350°C

After H2/Ar post annealing 338.71

After annealing 0.003250°C

After H2/Ar post annealing 48.08

After annealing 0.0007200°C

After H2/Ar post annealing 23.08

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Fig. S4 (a) SEM image of the AgNW film. AgNW films were prepared with a spin coating speed

of 650, 800, or 1000 rpm. (b) Converted images showing the projected two-dimensional

morphology of the AgNW films. (c) Corresponding images showing the area fraction of the open

area ratio (OAR) to the covered area ratio (CAR).

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Fig. S5 The morphologies of ITO/AgNW films annealed at 250°C for 30 min depending on the

concentration of ITO sol-gel solution.

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Table S2. The sheet resistances of ITO/AgNW/ITO composites with different thickness of ITO top coating layers.

Concentration of ITO sol-gel

used to overcoatSchematic Average sheet resistance

0.4 M 46.3 ohm/sq

0.2 M 9.96 ohm/sq

0.02 M 8.98 ohm/sq

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Fig. S6 XRD spectra of PbI2/ZnO/ITO/AgNW/ITO/Si. Aged samples indicate that the

measurement was performed after 24 h-aging (ITO = ■, PbI2 = ▼, Ag =▲, Si substrate =＊).

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Fig. S7 (a) FE-SEM images of top surfaces and (b) cross-sectional images in COMPO mode of

CH3NH3PbI3/AgNW, CH3NH3PbI3/ZnO/ITO/AgNW/ITO, and CH3NH3PbI3 + m-Al2O3/ZnO/ITO/

AgNW/ITO.

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Fig. S8 Sequential J-V curves of optimal devices using the ZnO/ITO/AgNW/ITO substrate. (a) 1st

negative scan and 2nd positive scan. (b) 3rd negative scan and 4th positive scan. (c) six repeated

negative scans.

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Fig. S9 External quantum efficiency (EQE) and integrated current density of the device

containing the composite electrode.

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Fig. S10 Current density-voltage (J-V) curve of the device: Au/Spiro-OMeTAD/CH3NH3PbI3/m-

Al2O3/ZnO(sol-gel)/ITO(sol-gel) under standard 1 sun AM 1.5 G simulated solar irradiation. The

inset is a table for performance parameters.

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Fig. S11 J-V curves of devices with different bottom ITO thicknesses. As the thickness of the

bottom ITO film increased, so did the short circuit current density (JSC) of the device.

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