development of novel on-chip, customer-design spiral biasing adaptor for si drift detectors
DESCRIPTION
9 th International “Hiroshima” Symposium on the Development and Application of Semiconductor Detectors, Hiroshima, Japan, 1-5 September, 2013. Development of Novel On-Chip, Customer-Design Spiral Biasing Adaptor for Si Drift Detectors and Detector Arrays for X-ray and - PowerPoint PPT PresentationTRANSCRIPT
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Development of Novel On-Chip, Customer-Design Spiral Biasing Adaptor for Si Drift Detectors
and Detector Arrays for X-ray and Nuclear Physics Experiments
Z. Li and W. Chen
Brookhaven National laboratory Upton, NY 11973-5000, USA
September, 2013
*This research was supported by the U.S. Department of Energy: Contract No. DE-AC02 -98CH10886
9th International “Hiroshima” Symposium on the Development and Application of Semiconductor Detectors, Hiroshima, Japan, 1-5 September, 2013
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Outline
1.Introduction
2.Concept of Spiral Biasing Adapter (SBA) --- Separation of biasing and SDD field-define-rings
3.Design of SBA
4.Design of SDD cell
5.Some design options of SBA and SDD
6.First protypes
7.Summary
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1. The current Spiral SDD was designed such that each SDD single cell has its own biasing spiral, which is also used as the definition of the p-n junction on the surface [1-3];
2. The power is therefore Ps=Vout2/Rspiral (1002/10M=1 mW/cell) for a
single cell and P=N2xPs for a SDD array of NxN, which can be large (e.g. for N=100, P=10 W) ;
3. The heat generated by this power stays with the SDD, making it hard to cool down necessary for low leakage current;
Introduction1
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4. The new SBA
a) will separate the biasing and p-n junction definition b) is designed and processed the same as SDD in geometry and in wafer; c) less powers consumption (one SBA per SDD array); d) SDD has the same geometry as SBC (i.e. pitch p=p(r) ); implant width W=W(r) can be 80 to 90% of p(r) --- minimum surface area;
• Only a few bonds are needed to connect SBA and SDD;
• It may stay on the same SDD chip (not severed off) for easy one metal/two metal connections
to the SDD
• The biasing on the SDD array can be interconnected by one or two metal process depending on the value of Vout;
Introduction (continue)
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0.02 0.03 0.04 0.05 0.06 0.08 0.09 0.11 0.13 0.14 0
0.008
0.016
0.024
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
Phi (V)
r (cm)x(cm)
Vout
VBout
VE1
VBE1
e
here) 3.0(
2
9.0
1
11
outBE
Bout
fdout
EfdBE
VVV
VV
VVV
If we only bias VBE1 (or bias VB
E1 = VBout, =0), it
will be the same as biasing the backside uniformly
Vanode=0
VoutVE1Vanode=0
n+ anode
VBoutVB
E1
p+ spirals
e
e
Spiral square SDD single Cell ---- Good for packing in spaceSpiral implants used to define a constant drift field --- minimum
drift time
e
e
I
IB
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Square SBA Chip
1500 m
V
A
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Square SBA Voltage distribution
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Square SBA Voltage distribution on SBA bias voltage
Linear dependences
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Square SBA Chip
Square SDD Array
Al wire bonds
1500 m
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Design of SBA Chip integrated with SDD and SDD arrays
Detector processing will soon begin
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Square SBA Chips
Square SDD Array
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Square SBA Chips
Square SDD Array
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Square SBA Chips
Square SDD Array
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Square SBA Chips
Square SDD Array
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Summary
1.Novel On-Chip Spiral Biasing Adapter (SBA) has been proposed
2.SBA has achieved the separation of biasing and SDD field-define-rings
3.Design of SBA and SDD rings are competiple
4.First prototype of SBA has been made
5.First protype of SBA with SDD is on the way
7
References[1] P. Rehak et al., “Spiral Si Drift Detectors”, IEEE Trans. Nucl. Sci., Vol. 36, No. 1, 203-209 (1989)[2] P. Rehak et al.,”Array of Silicon Drift Detectors for an Extraterrestrial X-ray Spectrometer”, Nucl. Instr. and Meth. A, 624, 260-264 (2010)[3] W. Zhang et al., IEEE Trans. Nucl. Sci., Vol. 47, No. 4, 1381-1385 (2000)[4] Z. Li, , Nuclear Instruments & Methods in Physics Research A (2013), http://dx.doi.org/10.1016/j.nima.2013.06.066i