components and subsystems for defense & security€¦ · defense & security products these...

Components and Subsystems for Defense & Security

Building the world’s largest and mostadvanced high frequency portfolio.

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With the acquisition of Endwave Defense and Security products in 2009, Microsemi Corporation created its new RF Integrated Solutions group, an organization having anindustry leading portfolio ranging from components to subsystems and spanning frequencies to 110 GHz. Combined with its new defense and security systemproducts, Microsemi RFIS technologies also supporta wide range of high reliability discrete RF/microwavecomponents and high power RF power transistors.

Defense & Security ProductsThese subsystems deliver integrated modules that fit seamlesslyinto your system architecture. They utilize advanced, custom-designed semiconductors to provide optimized solutions for our customer applications. Our subsystempackaging technologies encompass SMT, discrete hybridMIC circuits, custom MMICs and bare die COB.

Our program experience includes:• Millimeter Wave Personnel Imagers & Perimeter “Fences”• Unmanned Aerial Vehicles (UAV)• Airbourne Surveillance Platforms• Radar Warning Receivers (RWR)• Missile Front-ends, Exciters, and Fuses• “Intelligent Battlefield” Communications• Automatic Landing Guidance (ALG) Systems• Phased-Array, Monopulse and Fire Control Radar

Microsemi RF Integrated Solutions combines products, technologies, experience and resources of the worldʼs premier RF components suppliers. Today, our portfolio is unmatched in

both breadth and depth, providing incomparable capabilities for our RF customers.

Introducing MMicrosemi RF Integrated Solutions

www.microsemi-rfis.com

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MilliWave

Log AmplifiersF E A T U R E S A N D

S P E C I F I C A T I O N S

• Searchable design library to 75 GHz, or customize to 110 GHz

• Broadband & narrowband models

• Low Noise Amplifiers (LNAs) 1 GHz NF < 0.5 dB typ.Ka-Band NF < 3 dB typ.

• Medium Power Amplifiers (MPAs)+15 dBm < P1dB < +27 dBm

• High Power Amplifiers (HPAs) Models up to +30 WattsGain 30-50 dB typ.Ka-Band NF < 6 dB typ.Rack mount & module types

• General Purpose /Gain BlocksAll popular bands coveredOctave & multi-octave BW

• Specialty Amplifiers—Limiting & LowPhase Noise Models

• MIC and MMIC technology

• Single-ended & balanced topologies

• All waveguide sizes (WR19-WR90)

• All coax types (SMA, K, 2.4 mm, 2.9 mm, GPO)

• Internally regulated ESD controls

• ISO9001:2000 & AS9100:2004 certified

• Environmental testing to Mil-Std 202

• Workmanship based on Mil-Std 883 & IPC-A-610

• Internal laser weld, fine/gross leak

• -55º to +95º C temp range, typ.

• 2-4 Week standard delivery

At the core of Microsemi’s RF component capability lies a comprehen-

sive line of solid-state amplifier products up to 110 GHz, merging our

own organic innovations with the acquired design libraries from JCA

Technology, ALC Microwave, and TRW Milliwave. With a creative,

experienced engineering team and the most modern analytical and

simulation tools available, Microsemi's customization capability

is limitless.

Employing the latest advancements in thin-film technology, eutectic

attachment, ultrasonic/thermo-compression bonding and high-preci-

sion automated assembly techniques, our amplifiers achieve extremely

high-performance and impeccable unit-to-unit consistency. As an

ISO9001:2000/AS9100 certified manufacturer with workmanship

standards based on Mil-Std 883 and IPC-A-610, Microsemi is a

favorite amongst top tier defense contractors. They look to us when

applications call for an LNA to establish the lowest possible noise figure

on radar front-ends, Ka-Band high-power amplifiers to separate VSAT

transmitters from the pack, or a limiting amplifier to protect receiver

electronics from ECM jamming signals. Allow us to establish the same

confidence with you.

Options:

• Matched sets (Gain/Phase Tracking) • Bias-T

• Temperature compensation • Various I/O connectors

• Variable gain control • Hermetic/non-hermetic

• Isolators, filters, limiters packages

• Power detector • TTL switching

• Additional power stage

45

43

41

39

37

35

33

31

29

27

25

Gai

n (

dB

)

Frequency (GHz)

2 to 18 GHz Gain (Matched Set of 50)

2 4 6 8 10 12 14 16 18

Gain Flatness ±1.25 dB Typical

LOG

AM

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Amplifiers F E A T U R E S A N D


AM

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www.microsemi-rfis.com www.microsemi-rfis.com

Building upon the heritage from ALC Microwave, Inc. we have

developed high performance log amplifiers for use in early

warning radar receivers, threat detection equipment, electronic

countermeasures, and missile guidance systems. A log amplifier

has an output voltage that is pro-

portional to the logarithm of its

input voltage, allowing for a more

usable format for pulse radars by

effectively compressing a large input

dynamic range into smaller, more

manageable blocks. Detector Log

Video Amplifiers (DLVA) are single

detector devices employing wideband post-detection logarithmic

amplification. These devices provide fast and accurate measure-

ments of pulsed (and CW) RF signals up to 50 dB in dynamic

range. Microsemi DLVAs are highly ruggedized to meet the most

stringent mil-spec environments.

For those applications where extended dynamic range up to

60-75 dB is necessary, high-gain limiting amplifier/detector

sections are cascaded to create a high-performance Successive

Detector Log Video Amplifier, or SDLVA. These designs offer

signal sensitivity approaching the thermal noise floor while

maintaining excellent thermal stability.

Microsemi’s log amplifiers offer log accuracy and log linearity

that are best in class—and our capability extends well into the

millimeter wave range where others fall short.

DLVA and SDLVA Models:

• Log linearity0.5 to 18.5 GHz: ±1.3 dB18 to 40 GHz: ±1.0 dB

• Log accuracy0.5 to 18.5 GHz: ±2.0 dB18 to 40 GHz: ±1.5 dB

• Tangential sensitivity (Tss)0.5 to 18.5 GHz: -70 dBm18 to 40 GHz: -68 dBm(more sensitivity available upon request)

• Rise time0.5 to 18.5 GHz: 10 ns18 to 40 GHz: 8 ns

• Dynamic range: 70 dB (SDLVA), 50 dB (DLVA)

• Recovery time: 50 ns, typ.

• CW to 70 MHz video bandwidth

• Ask about “CW Immunity” options

• VSWR: 2.5:1 in/out

• Temperature range: -45° C to + 85° C

• Packaging: hermetic, laser sealed aluminum housings

18 to 40 GHz DLVA

Log Linearity, 18-40 GHz SDLVA

Log Accuracy, 18-40 GHz SDLVA

Input Dynamic Range (dB)

-3

-2

-1

0

1

2

3

-60

-54

-48

-42

-36

-30

-24

-18

-12

-6 00

Dev

iati

on

(dB

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GHz 18.0 24.0 29.0 34.0 40.0

(least squares best fit straight line)

Input Dynamic Range (dB)

-3

-2

-1

0

1

2

3

-60

-54

-48

-42

-36

-30

-24

-18

-12

-6

Dev

iati

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(dB

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Multipliers F E A T U R E S A N D


MU

LTIP

LIE

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Up / Down ConvertersF E A T U R E S A N D


• Up/down-converters to 110 GHz

• IF coverage to 20 GHz

• Super-heterodyne, image/LO reject, and sub-harmonic topologies

• Up-converter output power to +2W

• Down-converter noise figure to < 3 dB

Parameter Unit Down-converter Up-converter

RF Start Freq GHz 21.2 22.4

RF Stop Freq GHz 22.4 23.6

LO Start Freq GHz 6.65 6.65

LO Stop Freq GHz 7.05 7.05

IF Freq GHz 1.25 2.45

Conversion Gain dB 22 29

Flatness (50 MHz) dB ± 0.25 ± 0.25

Noise Figure dB 5.5 18

Intercept Point dBm -7 (input) 32 (output)

Input VSWR :1 1.92 2.0

Output VSWR :1 1.75 1.8

LO Input Power dBm 5 8

Typical converter performance

Microsemi’s up/down-converter capability spans a wide range

of RF & LO frequencies up through 110 GHz, with IF coverage

to 20 GHz. A typical lineup for an integrated down-converter

assembly includes an RF chain consisting of a low-noise

amplifier (LNA), image reject filter, a mixer, and an IF output

amplifier stage. Similarly, a typical up-converter lineup begins

with an IF pre-amplifier and filter, a mixer, followed by an

LO-reject filter and power amplifier chain on the RF output.

Various LO configurations are available, and mixer options

include single-balanced, double-balanced, triple-balanced,

image reject, and sub-harmonic configurations. An optional

phase locked source can also be integrated to provide a

self-contained on-board synthesizer for generating the

LO signal.

The complete assemblies are housed in a compact hermetic

case and configured with either coaxial or waveguide

connectors.

Options:

• On-board LO source or multipliers

• Input limiters

• Output detector

• Receive signal level (RSL)/receive signal strength indicator (RSSI)

• RF or IF gain control

• I/O isolators

• Lower cost, non-hermetic packaging

UP

/DO

WN

CO

NV

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www.microsemi-rfis.com www.microsemi-rfis.com

• 4 to 110 GHz output frequency capability

• Multiplication factors from X2 to X80

• Broadband models: octave plus bandwidth

• Narrowband models: 5 to 20% bandwidth

• Popular output bands (GHz): 18-26.5, 26-40, 40-60

Doubler Tripler Quadrupler Parameter Unit Active Passive Active

Input Frequency GHz 10–20 4.5–5 6.6–10

Output Frequency GHz 20–40 13.5–15 26–40

Input Power dBm +10 +15 +10

Output Power dBm +10 +1 +15

Harmonics dBc -20 -20 -15

DC Supply V/mA +12/240 0/0 +12/410

Options:

• Single-ended or balanced design configurations

• Passive, diode-based designs

• Active, FET or PHEMT-based designs

• Output power amplification to > 2W

• Tailor-made input drive level

• Gain control

• Output filtering

• Built-in test (BIT)

• I/O connector options include coax, waveguide, GPO

• Lower cost, non-hermetic packaging

Microsemi frequency multipliers include a comprehensive line of

doublers, triplers, quadruplers, and higher order multiplication

schemes up to N = 80. Narrowband passive diode-based models

provide superior phase noise to within 1 dB of the theoretical

limit of 20 Log N. Active models using FETs or PHEMTs typically

have broader bandwidth and slightly higher phase noise, but

allow the multiplier module to also provide gain, if necessary.

Options include operating voltages from +5V to +24V, and DC

bias can be configured for minimal current drain when battery

operation is required. Our capability provides multiplier output

frequencies from 4 GHz up to 110 GHz. Depending on desired

filtering and amplification, output power levels can exceed

2 watts.

Typical Multiplier Output Power

35

30

25

20

15

100 20 40 60 80 100

Frequency (GHz)

Ou

tpu

t Po

wer

(d

Bm

)

Up-converter Saturated Output Power

40353025201510

50

0 20 40 60 80 100

Frequency (GHz)

Pow

er (

dB

m)

Down-converter Noise Figure Capability

10

8

6

4

2

00 20 40 60 80 100

Frequency (GHz)N

ois

e Fi

gu

re (

dB

)

TransceiversTR

AN

SC

EIV

ER

S


F E A T U R E S A N D


You need a transmitter. You need a receiver. And you need them

combined into a high-performance, reliable T/R module solution

that makes integration into your overall system architecture a

breeze. We’ve become experts in eliminating cross-talk between

transmit and receive electronics—avoiding noise figure degrada-

tion due to digital logic, modulation, and control signal interfer-

ence—and suppressing LO leakage that might otherwise weigh

down your transmitter linearity. When you need that extra level

of precision and accuracy, Microsemi will embed digital “smarts”

with a micro-controller for automatic adjustment of transceiver

parameters. Transceivers are our business, and they exemplify

our dedication to providing truly superior integrated modules

for high-frequency applications. They are delivered to your

exact specifications and come in a variety of form factors.

Options:

• Integrated LO synthesizers

• Transmitter power detection (accuracy to ± 1 dB)

• Transmitter gain control options, up to 50 dB

• Receiver gain control options, up to 30 dB

• Receiver limiter protection

• Receiver signal level (RSL) monitoring

• TX to RX loopback diagnostics

• Multiple DC power & I/O options (coax, waveguide, multi-pin headers)

• Frequency capability up through 110 GHz

• Integrated transmit, receive, and LO circuitry

• Embedded micro-controller enables “adaptivemodulation”

• LO multiplication factor, XN (N = 1 to 12)

• Receiver noise figures to 2 dB

• Transmit output power to +2W

• Linear or non-linear operation

• Low spurious emissions

• Environmentally sealed and tested at temperatures from -54°C to +100°C

Parameter Unit Receiver Transmitter

RF Frequency GHz K-Band –

LO Frequency GHz S-Band –

IF Frequency dBm L-Band –

Rx IIP3 dBm -35 –

Noise Figure dB 2.6 –

Conversion Gain dB 50 –

LO Input Power dBm +2 +2

Output Frequency GHz – Q-Band

Input Frequency GHz – S-Band

Multiplication Factor – – X16

Input Power dBm – 0

Output Power dBm – +33

Popular T/R Frequency Bands:

C-Band: 5.9 to 8.5 GHz

X-Band: 10.7 to 11.7 GHz

Ku-Band: 12.75 to 15.25 GHz

Lower K-Band: 17.7 to 19.7 GHz

Upper K-Band: 21.2 to 26.5 GHz

Lower Ka-Band: 27.5 to 33.4 GHz

Upper Ka-Band: 36 to 40 GHz

V-Band: 57 to 64 GHz

E-Band: 71 to 86 GHz

W-Band: 93 to 95 GHz

Sample integrated transceiver specifications


Multi-Function AssembliesF E A T U R E S A N D

S P E C I F I C A T I O N S MU

LTI-FUN

CTIO

N A

SS

EM

BLIE

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• Custom Microsemi designs, or build-to-print manufacturing services

• Frequency capabnility up to 110 GHz

• Combine RF, LO, IF, and digital electronics

• Integrated RF Subsystems:Amplifier networksFiltering & equalizationRF power distributionFrequency conversionFrequency generationSwitches, limiters, detectorsProgrammable attenuatorsMicro-controller based subsystems

• SMT, MMIC, MIC packaging technologies and bare die COB

• Automated assembly and test

• Design for manufacturability (DFM)

• W/G and coax connector options

• Environmental screening (ESS)

• Hermetic packaging If you can imagine it, and the laws of physics allow it—we can

custom design it for you. Armed with an unparalleled library of

circuit building-blocks at our fingertips, Microsemi combines

multiple components into a single, efficient, high-performance

Multi-Function Assembly (MFA). Take an amplifier, a multiplier, a

down-converter from Microsemi’s vast product portfolio—and

build from there. Integrate other functionality, such as filter

banks, equalizers, power detectors, and digitally controlled

attenuators. The power of integration—removing cables,

complicated interconnects, packaging, and cost from your

system electronics. From wide dynamic range limiting amplifier

distribution systems, to complete RF front-ends, our custom MFA

capability positions Microsemi as your one-stop shop for all of

your RF to millimeter-wave electronics.

In addition to unsurpassed design capability, we also provide our

customers with build-to-print assembly and test services of their

proven MFA designs. Our high-volume business base enables us

to amortize overhead expenses over a large number of units,

leverage our materials purchasing power, and reduce manufac-

turing costs of your MFAs. Take advantage of our automation,

innovation, and experience by letting us put our contract

manufacturing resources to work for you.


Microsemi RF Integrated Solutions105 Lake Forest WayFolsom, CA 95630

(916) 850-6926Fax: (916) 850-8606


© 2010 Microsemi Corporation.Specifications subject to change without notice.

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