Microsoft PowerPoint - MEF 2015 Fang2.pptProf. Weileun Fang ()
National Tsing Hua University, Taiwan
fang@pme.nthu.edu.tw
• Small and Smart
• Add value to the existing CMOS tech
Diversification
Miniaturization
o re
M o
o re
MDL NTHU
Sacrificial materials + Specialized PR (1m to 4m) + CVD SiO2 (several ms)
Structural materials + PECVD Si3N4 / SiO2 (up to 2m) + PVD TiN, TiAl, TiAlN, AlCu (up to 1m; except 5m for AlCu) + PVD and CVD amorphous Si (up to 1m) + LPCVD Poly-Si (up to 10m, MEMS only)
Si
Structure layer
0.35m 2P4M CMOS process 0.18m 1P6M CMOS process
Si substrate Si substrate
Metal
W-via
SiO2Polymer
Poly-SiSi
Standard TSMC CMOS process
MDL NTHU
Si
Sun, and Fang, IEEE MEMS, 2009 Sun, and Fang, IEEE Trans. on ED, 2010
Z-axis
Non-linearity (%) 2.64 3.15 3.36
Cross-axis sensitivity _X(%) < 7.46 < 2.88
Cross-axis sensitivity _Y(%) < 1 < 8.05
Cross-axis sensitivity _Z (%) < 1 < 8.33
3-axis G-sensor
MDL NTHU
Fingers Spring Coil
Nonlinearity (%) 2.27 3.27 2.24
Sun, and Fang, Transducers, 2009 Sun, and Fang, JMM, 2009
MDL NTHU
Sensitivity 0.04 fF/kPa 0.02 fF/kPa 0.042 fF/kPa 0.36 fF/kPa 0.23 fF/kPa
Sensing Range
0~500 kPa 90~500 kPa 100~500 kPa 0~60 kPa 0 ~ 90 kPa
Diaphragm
Thickness 1.925 μm 3.56 μm 3.56 μm 1.64 μm 1.925 μm
I II III IV V
I II III
Sensitivity 4.94 / 5.39 /2.96 X/Y/Z (mV/G)
0.21 / 0.20 /0.90 X/Y/Z (V/T)
19.6V/KPa 0.72*10-3/ºC 0.037%/%RH
Sensing range 0.01~5G 50~1200T 30~200KPa 30~120ºC 30~90%RH
Non-linearity < 6.5% < 3.27% 9.5% - -
Pressure sensor
Temp. sensor
Humidity sensor
Sensing circuit
Growth np-AAO
Post-CMOS processes developed by Prof. Fang’s group
Standard TSMC CMOS process
Pressure Sensor P
Sensing Range 20~500 kPa 20~500 kPa
Thickness 4.3 m 4.3 m
MDL NTHU
400m
RF- aerogel
Chung, and Fang, IEEE Sensors, 2014 Chung, and Fang, IEEE MEMS, 2015
Si
Response time -- 19 sec (%60) 6 sec (%60)
Sensing Range 20~80 % 20~80 % 20~80 %
MDL NTHU
Temperature Sensor
Poly-1: 0.726 × 10-3/ Non-linearity: 5.5% Poly-2: 0.434 × 10-3 / Non-linearity: 3.3%
Temperature Sensor
0.00
0.01
0.02
0.03
0.04
0.05
0.06
Sensitivity 4.94 / 5.39 /2.96 X/Y/Z (mV/G)
0.21 / 0.20 /0.90 X/Y/Z (V/T)
19.6V/KPa 0.72*10-3/ºC 0.037%/%RH
Sensing range 0.01~5G 50~1200T 30~200KPa 30~120ºC 30~90%RH
Non-linearity < 6.5% < 3.27% 9.5% - -
Flex. Beam Res. Flex. Plate Res.
Liu, Li, and Fang, J. of MEMS, 2013 Chen and Li, Transducers, 2013 Li and Li, IEEE Electron Device Lett., 2015
Bulk Mode Res.
MDL NTHU
RF resonator
Bulk-Mode Res.Tuning-Fork Res.
Chen and Li, IEEE IFCS, 2012 Chen and Li, IEEE EDL, 2012
0.18m 1P6M process (sub-m gap)
CMOS-MEMS Resonator Hub
TSMC 0.13 m Process
TSMC 90 nm Process
Scaling with IC Tech
Mere-Metal Resonator Metal-Rich Resonator
TCE of metal is negative, TCE,Al ~ -716 ppm/C TCE of oxide is positive, TCE ~ +185 ppm/C
Oxide-Rich Resonator
Temperature Compensation
MDL NTHU
Temperature Compensation
-20000
-15000
-10000
-5000
0
5000
-20000
-15000
-10000
-5000
0
5000
-20000
-15000
-10000
-5000
0
5000
-20000
-15000
-10000
-5000
0
5000
-25000
-20000
-15000
-10000
-5000
0
5000
f /f
o [p
p m
MDL NTHU
Chang, and Fang, IEEE MEMS, 2014 Huang, and Fang, Sensors J., 2011
Metal
W-via
Pass.
Microphone implemented by 0.35m 2P4M CMOS process
SiO2
CMOS stacking process (0.35m 2P4M)DRIE defined vent holeXeF2 isotropic etchingRIE defined structureDRIE defined back chamberSacrificial oxide removed
Microphone Microphone Spectrometer
Si
Si
Diaphragm thickness 3.5m
Back-plate No
Sensitivity -64.78dBV/Pa
Anechoic Chamber
Speaker MEMS
Corrugated
diaphragm
Diaphragm thickness 1.1m
Frequency response 100Hz~10kHz
Sensitivity −42 ± 3 dBV/Pa
Display regionRing electrode
MDL NTHU
Driving Voltage 0~80V (typical: 80V) 0~50V (typical: 40V)
Red-reflectivity 50/35% (40/80V) 26/25% (0/40V)
Green-reflectivity 26/24% (0/80V) 26/43% (0/40V)
Blue-reflectivity 18/17% (0/80V) 5/15% (0/40V)
Near IR-reflectivity 60/48% (0/80V) 58/75% (20/40V)
Spectrometer
Spectrometer
MDL NTHU
Material Properties
#1 #2 #3 #4 #5 #6 #7 #8 #9 #10 #11 #12 #13 #14 #15
15 stacking types
ILD IMD1
1-layer 2-layer 3-layer 3-layer2-layer 3-layer 3-layer 3-layer
MDL NTHU
Cantilever Test-key
Cheng, and Fang, JMM, 2015
MDL NTHU
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TiN: 250GPaAl: 70GPaSiO2: 70GPaBulk
IMD3 2.6±0.3 M4 18.1±1.1
IMD2 2.7±0.2 M3 16.5±1.2
IMD1 2.6±0.6 M2 16.9±1.7
ILD 2.7±0.6 M1 17.7±0.9
30°C (ROC -0.300.02 m) 60°C (ROC -0.200.01 m)
90°C (ROC -0.180.01 m)
0 100 200 300 400 500 600
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
MDL NTHU
M4 113.2±14.8 18.1±1.6
M3 136.8±16.9 16.5±1.9
M2 131.5±10.8 16.9±2.0
M1 134.1±6.0 17.7±1.5
IMD3 74.8±7.6 2.6±0.5
IMD2 73.4±5.2 2.7±0.5
IMD1 73.8±2.7 2.6±0.7
ILD 76.9±1.3 2.7±0.7
CMOS Materials Data Bank
MDL NTHU
RF TX/RX (OOK/RFID)
Energy Harvest (RFID)
ircuit
(12dBm input/100kΩ load)
1 Coil+RF Rectifier 11 cm2 double layer 1.3~1.4 V
2 Coil+RF Rectifier 22 cm2 single layer 1.7~1.85 V
3 Coil+RF Rectifier 1.51.5 cm2 double layer 2.2~2.5 V
Vo
CNT
TSMC MEMS Platform II
The next big things
+ Major players: Google, Apple, Cisco, Alibaba, Huawei, etc.
+ Semiconductor remain the key enabling tech.
www.appledaily.com.tw
ASIC Wireless
• National Labs, Taiwan – CIC, NDL
• Ministry of Science and Technology (MOST), Taiwan
• Fabrication Common Lab – NTHU, NCTU, NTU
• Prof. S.-S. Li - Resonators related materials
• My graduate students
General Chair                                 General Chair                                  Technical Program ChairTechnical Program Chair WeileunWeileun Fang                                                   Shuichi Fang                                                   Shuichi ShojiShoji NTHU, Taiwan                                  NTHU, Taiwan                                   WasedaWaseda U., Japan U., Japan 
Kaohsiung Exhibition and Convention CenterKaohsiung Exhibition and Convention Center
KAOHSIUNG, TAIWANKAOHSIUNG, TAIWAN June 18June 18--22, 201722, 2017