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Xing Sheng, EE@Tsinghua
1
Xing Sheng盛兴
Department of Electronic EngineeringTsinghua University
xingsheng@tsinghua.edu.cn
Introduction
Principles of Micro- and Nanofabrication for Electronic and Photonic Devices
Xing Sheng, EE@Tsinghua
Optical and Electronic Devices
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LEDs lasers waveguides fibers
photonic crystalsmetamaterialssolar cellsdetectors
integrated circuits
Xing Sheng, EE@Tsinghua
Goal of This Course
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Focus on the fabrication and processing methods to form electronic and optical devices at micro- and nano-scale
Cover fundamental concepts to grow, pattern, deposit, etch and integrate various materials (silicon, III-V, etc) to form electronic and optical devices
Emerging fabrication technologies such as nanofabrication and self-assembly will also be included
Xing Sheng, EE@Tsinghua
Nobel Prize in Physics
22
1956 Semiconductor transistors
1991 Liquid crystals
2000 Integrated circuits
2000 Semiconductor heterostructures
2009 CCD imaging sensors
2009 Optical fibers
2010 Graphene
2014 GaN based blue LEDs
Xing Sheng, EE@Tsinghua
'Disruptive' Technologies
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1956 Semiconductor transistors
1991 Liquid crystals
2000 Integrated circuits
2000 Semiconductor heterostructures
2009 CCD imaging sensors
2009 Optical fibers
2010 Graphene
2014 GaN based blue LEDs
vacuum tubes
CRT displays
film cameras
copper cables
incandescent light bulbs
Xing Sheng, EE@Tsinghua
Semiconductor Market
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current ~ 500 billion $$$
GDP of Thailand: 400 billion $$$
Xing Sheng, EE@Tsinghua
Devices in a Smartphone
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Xing Sheng, EE@Tsinghua
Some 'Ancient' Computers
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abacus slide rule
First 'electronic' computer ENIAC, 1943
30 tons, 200 kW
18000 vacuum tubes
5000 times/sec
cost $480,000 vacuum tube
Xing Sheng, EE@Tsinghua
Vacuum Tube
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current flows only in one direction: diode
Xing Sheng, EE@Tsinghua
First Semiconductor Transistor
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GermaniumBipolar Transistor
1956 Nobel Prize in Physics
Xing Sheng, EE@Tsinghua
First Integrate Circuits
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Germanium
2000 Nobel Prize in Physics
J. Kilby1923–2005
Q: Why Ge?
Xing Sheng, EE@Tsinghua
First Integrate Circuits
30All devices can be made in the same semiconductor!
diode capacitor transistor resistor
Xing Sheng, EE@Tsinghua
First Integrate Circuits
31
"There is plenty of room at the bottom", APS Meeting, 1959
R. Feynman
Xing Sheng, EE@Tsinghua
First Integrate Circuits
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Silicon
R. Noyce1927–19904 transistors
~ 2 mm
Xing Sheng, EE@Tsinghua
First Integrate Circuits
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Thermal oxidation (SiO2)
Photolithography
Etching
Thermal diffusion (n-Si, p-Si)
Metal deposition (Al)
~ 2 mmVery similar to today's process
Xing Sheng, EE@Tsinghua
CMOS
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Complementary Metal-Oxide-Semiconductor F. Wanlass, Fairchild, 1963
Xing Sheng, EE@Tsinghua
CMOS Process
35Video
Xing Sheng, EE@Tsinghua
CMOS Logic
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Xing Sheng, EE@Tsinghua
CMOS Circuit
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Xing Sheng, EE@Tsinghua
Integrate Circuits
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Moore's law, Fairchild, 1965
G. Moore
G. E. Moore, Electronics Mag. 38, (1965)
Xing Sheng, EE@Tsinghua
Integrate Circuits
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Moore's law, Fairchild, 1965
G. E. Moore, Electronics Mag. 38, (1965)
G. Moore
Xing Sheng, EE@Tsinghua
Integrate Circuits
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Moore's law, Fairchild, 1965
Intel i7 CPU, ~ 109 transistors
< 100 nm
virus
Modern Electronics is a real Nanotechnology
Xing Sheng, EE@Tsinghua
120 Years of Moore's Law
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Xing Sheng, EE@Tsinghua
Integrate Circuits
421980s 2017, price > gold
Xing Sheng, EE@Tsinghua
Transistor Evolution
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Xing Sheng, EE@Tsinghua
Materials in IC
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Xing Sheng, EE@Tsinghua
Modern IC foundry
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Samsung
Global Foundries
Cost > 10 billion $$$
Video 2
Video 1
Intel
Xing Sheng, EE@Tsinghua
All Good Things Come to an End
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story about chess ...
Xing Sheng, EE@Tsinghua
Power Consumptions
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Shannon-von Neumann-Landauer (SNL) limit:minimum energy per bit ~ kBT*ln(2)
Xing Sheng, EE@Tsinghua
IC Delays
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RCt ~
more conductive electrodes, lower k dielectrics
Xing Sheng, EE@Tsinghua
Doping in Nano Devices
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atomic density of Si = 5 * 1022 /cm3
if the transistor size is 10 nm * 10 nm * 10 nm,and doping concentration is1 * 1018 /cm3
There is only 1 dopant atom in the transistor!
Xing Sheng, EE@Tsinghua
Grain Sizes in Nano Transistors
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grain size ~ a few nm
grain boundary, roughness, increased electron scattering, ...
Xing Sheng, EE@Tsinghua
Carrier Transport
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Xing Sheng, EE@Tsinghua
Carrier Transport
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large C requires small t
t
AC
VVC
L
WI thG
SatD
0
2
,2
)(
quantum tunneling
Xing Sheng, EE@Tsinghua
Danger from Outer Space
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smaller devices are more susceptible to cosmic rays
Xing Sheng, EE@Tsinghua
All Good Things Come to an End
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M. M. Waldrop, Nature 530, 144 (2016)
Xing Sheng, EE@Tsinghua
New Opportunities
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Xing Sheng, EE@Tsinghua
New Opportunities
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high k dielectric, copper, FinFET, strained Si, ...
photonics, MEMS, flexible, power, ...
nanowires, 2D, photonic circuits, ...
Xing Sheng, EE@Tsinghua
High Electron Mobility Transistor (HEMT)
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electron mobility
hole mobility
Xing Sheng, EE@Tsinghua
Nano-Transistors
58S. Desai, et al., Science 354, 99 (2016)
Xing Sheng, EE@Tsinghua
Photonic Integrated Circuits
59C. Sun, et al., Nature 528, 534 (2015)
Xing Sheng, EE@Tsinghua
3D IC
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Logic + Memory + Sensing + ...
conventional 3D IC
M. M. Shulaker, et al., Nature 547, 74 (2017)
Xing Sheng, EE@Tsinghua
More than Moore
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Microelectronics
Microelectromechanical Systems (MEMS)
Micro and Nano Photonics
Optoelectronics
Xing Sheng, EE@Tsinghua
Image Sensors
62films CMOS sensors
Xing Sheng, EE@Tsinghua
Displays
63CRT Flat panel
Xing Sheng, EE@Tsinghua
Light Sources
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Incandescent bulb
LEDsFluorescent lamp
S. Nakamura, et al., Appl. Phys. Lett. 64, 1687 (1994)
Xing Sheng, EE@Tsinghua
Light Sources
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ruby laser
semiconductor lasergas laser
Xing Sheng, EE@Tsinghua
Integrated Photonic Circuits
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Integrated photonicsConventional optics
Xing Sheng, EE@Tsinghua
Integrated Photonic Circuits
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Optical AntennaMicrowave Antenna
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