active components based ondynamicdownloads.hindawi.com/journals/apec/2000/645972.pdf ·...

Active and Passtve Elec. Comp., 2000, Vol. 23, pp. 25- 36Rprints available directly from the publisherPhotocopying permitted by license only

(C) 2000 OPA (Overseas Publishers Association) N.V.Published by license under

the Gordon and Breach SciencePublishers imprint.

Printed in Singapore.

ACTIVE COMPONENTS BASEDON DYNAMIC NEGATRONS

PAVLO MOLCHANOV, ARUN K. MISHRA*,HELEN LINNIK and PAVLO MULYAR

Vinnytsia State Technical University, Ukraine

(Received 19 February 2000; In finalform 25 April 2000)

The active elements based on dynamic transistor negatrons (circuits with negative activedifferential resistance) are introduced. The principles of dynamic transistor negatronssimulation has been developed on the basis of non-linear charge model. Parameters,which characterize non-linear mode of dynamic transistor negatrons, are derived. Non-linear equivalent circuit and Volterra series are used to calculate parameters ofnegatrons.Particular attention is devoted to the frequency mixers and frequency switches. An experi-mental frequency mixer has been described, that has confirms the theoretical predictions.

Keywords: Dynamic transistor negatron; Negative differential resistance; Frequencymixers; Switches

The function of amplification and generation devices is based on theuse of two modes of amplification:

amplification by means of the potential insensitive elements, (forexample, electron tubes or semiconductor field effect transistors);andAmplification by means of the devices with negative differentialresistance, which are called negatrons [1- 3].

Depending on function principles, the negatrons may be classifiedinto three groups:

Negatrons with negative resistance and S-mode static ampere-voltage characteristics (dinisters, threenistors) (see Fig. la);

*Corresponding author, e-mail: [email protected]

25

26 P. MOLCHANOV et al.

Negatrons with negative conductivity and N-mode static ampere-voltage characteristics (tunnel, Gun diodes) (see Fig. lb);Dynamic negatrons with differential negative resistance on alter-nating current only (avalanche diodes and inverted common collec-tor transistor circuits) [3, 4]. The negative resistance in them arisesby lag alternating current from the variable voltage (see Fig. c).

I2

R(_ OU

A

U U U,V

FIGURE la Static characteristics of S-type negatron.

U U,V

FIGURE b Static characteristics of N-type negatron.

DYNAMIC NEGATRON 27

(’)

FIGURE lc Time dependence of alternate current and voltage in dynamic negatron.

The dynamic negatrons have been used as active components forfiltering, frequency multiplexing and other microwave applications[3-6]. Calculation of these circuits is based on the small-signal linearmodels [1,4, 5]. But the function of such devices as oscillators andmixers is based on the non-linearity of its characteristics. The objectiveof this work is to present the simulation methods of active componentsbased on nonlinear dynamic transistor negatrons. The research hasbeen conducted in microwave range.

NONLINEAR MODEL

A nonlinear model of dynamic transistor negatrons has been de-veloped on the basis of charge-model equations [6, 7]. The suggestednonlinear model allows describing the stationary state of negatron.The non-linear equations, which define current-voltage dependencies,can be described by multiple Taylor power series, where the com-ponents, which include small-signal response, can be distinguished.Therefore the negatron can be described as a non-linear system, con-sisting of linear and non-linear circuits (see Fig. 2).


Nonlinearpart

FIGURE 2 Negatron as nonlinear system, consisting of linear and nonlinear circuits.

The expressions for currents i1,i2, describe linear circuits throughthe convolution of pulse-periodical function (Volterra series) for thestationary mode

il all (7-) .Ul (t 7-)d7- + a12(7-), u2(t- 7-)d7- /

dd-iGe(t) +-t [qe(t) + 7-11iah(t)] O1

+P7-12

i2 a22(7-) u2(t 7-)d7- + a21 (7-)" Ul (t 7-)d7- +

d aN. iGe(t)+ iGh(t)+[q(t)+ 7-22iGi(t)]- i -11

(1)

where

27r L

ON ON(ge, U), T -. al (t) Y (jwl)eflw’,I=-L

L

a12 (t) a21 (t) y Y2(jwl)ejlwt’l=-L

1 L

a22 (t) Y2(jwl)ejlwt,I=-L

DYNAMIC NEGATRON 29

Yp,q Elements of conductivity matrix of the transistor’s linear circuit;T-period of oscillation in system; iGe, iG- currents of emitter andcollector junctions respectively; qe, q- charges of barrier capacitanceof emitter and collector junctions; Ul, U2-momentary input andoutput voltages; an, az-direct and reverse current gains; 7-p,q- timeconstant in Hamilton’s model; p- Laplas operator.

Expressions from (1) are divided into periodical Taylor series indomain of stationary mode. If the terms of the series are retained, thenthe increment components of input and output currents are writtenas shown in expression 2.

f0 f0dil all (7"). ul (t 7")dr + a12(r) u2(t 7-)d7- +

du2dqe)dUl] alqh

+P7-12+ qedUl + " [(Ce -’ 7"11

u (t + +

( O dul )qe + iGe OUl +P2I

(2)

This gives us a set of differential linear equations, which connectnonlinear system in the large signal mode. If the mode is periodical,than the set of Eq. (2) passes from a nonlinear into the time-dependentlinear parametric mode and may be written by the convolution infrequency range. These expressions give the linear relation betweencurrent and voltage changes and they allow calculating the transfer-ring characteristics.

If the frequency spectrum of input excitation is limited, then thematrix equation for four-port input excitation and response arewritten by expressions: (3)

[Ue] "--[YE]-l[Ic], (3)

where: [Yr,] [ YIY21 Y22


the square matrixes which responses to system of Y parameters;

the input current matrix vector, which describes the current changein emitter and collector circuits on the combination frequency;

[Uc] [dU,, dU2] [ate, dU ] u,.,

the output voltage matrix vector, which describes the voltage inemitter and collector circuits on the combination frequency;

[Yq] diag(Y_Lpq, Yopq, YLpq)

the diagonal matrix, which include the linear part of circuit’s con-ductance in main diagonal; [Ge], [Gk] the convolution form of thedifferential active conduction matrix, which characterize current-voltage junctions; [Ce], [Ck] the convolution form of the differ-ential junctions capacitance matrix;

[f] diag(-Lw + fl,..., f,..., Lw + f)

the diagonal matrix of combination frequencies;[T] the diagonal lag matrix;[Gae], [Gad the conductance matrixes, which are the Fourier series

coefficients as the functions product in time domain.

p,q= l,2; p+q= 3.

The matrix expressions (3) defines the output change for amplifyingand oscillating nonlinear regime of dynamic negatrons.

MEASUREMENT OF PARAMETERS

Calculated and measured impedance components versus frequencyand emitter current dependencies are shown in Figures 3-4.The outcomes ofexperimental researches have completely confirmed

adequacy of the proposed models. The error of measurement ofnegatron’s parameters does not exceed 10-15% in dependence ofthe measurement range, and the error of simulation does not exceed15-25%.

DYNAMIC NEGATRON 31

FIGURE 3 Frequency characteristics of impedance components.

f. H

R., X. Ohm

FIGURE 4 Impedance components versus emitter current characteristics.


APPLICATIONS

The development of theoretical basis for the calculation and researchof negatron’s characteristics in a nonlinear regime has allowedcalculating the characteristics of active components based on negatrondevices. The new properties and transistor negatron’s characteristicshave been used for the improved performance of known devices andfor development of new devices.

Frequency Transformers

The analysis of transistor negatron’s work has shown, that atrather small values of amplitude of negatron’s input signal, thenegatron is a non-linear device which can be used as a nonlinearelement of a frequency transformer. The negatrons’ use for fre-quency transformation has two basic advantages. First, the pre-sence of a negative resistance allows increasing the transmissionfactor of the circuit. Second, the use of the transistor circuits, asagainst application of two-poles, expands the possibilities of output

VTI

C4

FIGURE 5 Electrical scheme of the frequency transformer on the one transistor.

DYNAMIC NEGATRON 33

circuit, transforming signal circuit and of intermediate signal circuitde-couples.

Negatronic frequency transformer and it’s characteristics shown onFigures 5-7 [6].

Reactive resistance dependence from emitter current used forfrequency switcher for cellular receiver, electric scheme of which isshown on Figure 8 [8].

Active components stability been studied with the help ofinvariant stability coefficient. Invariant stability coefficient oftransistor negatrons is calculated through scattering negatron’s

FIGURE 6 Negatronic frequency transformer.

FIGURE 7 Characteristics of frequency transformer on two transistors.

FIGURE 8 Electric scheme of frequency switcher for cellular receiver.

DYNAMIC NEGATRON 35

1.04I’ 3115

1.75

.f-2OHz2.f’2.OHz3.f3OHz4.f-4OHz

I,, mA

FIGURE 9 Invariant stability coefficient versus amplitude of input current character-istics.

parameters (see Fig. 9).

12 12 IAIK -Is + Is2 + 21S1. sl’where A S11S22 S12S21,

Sij-scattering negatron’s parameters, which calculated throughnegatron’s Y parameters. Experiment, and 14 copyright certificatesand 4 patents for the invention confirm the theoretical outcomes.

CONCLUSIONS

1. Active components based on the dynamic negatrons allow morefull-use frequency properties of semiconductor devices and to domore efficiently.


2. The non-linear models of dynamic transistor negatrons which havetaken into account the influence of large signals, current, and thevoltage of the input on dynamic differential negatron’s parametersare described.

3. With the help of developed models, analytical relations for dynamicdifferential parameters of transistor negatrons in a nonlinearcondition have been obtained.

4. The experimental results have enabled us to check on adequacy ofthe models and their analytical relations.

5. On the base of offered models the frequency transformers andfrequency switching devices has been developed.

[1] Filinyuk, N. A., Garyinov, S. A., Seryejnov, A. N. and Stepanova, L. N.,Negatronics. Novosibirsk.: Nauka, 1995, 320 p.

[2] Molchanov, P. A., Basics of nonlinear theory of transistor negatrons. Monograph.Vinnitsa: "Universum-Vinnitsa", 1998, 207 p.

[3] Molchanov, P. A., A Nonlinear Dynamic Transistor Negatron Theory. Proceedingsof NDES’99, Ronne, Denmark, July, 1999, pp. 95-99.

[4] Adams, D. K. and Ho, R. Y., Active filters for UHF and microwave frequencies.IEEE Trans. Microwave Theory Tech., MTT-17, 662-670, Sept., 1969.

[5] Chang, C. and Itoh, T., Microwave Active Bandpass Filters Using NegativeResistance Circuits. IEEE MTT-S, 38(12), Dec., 1990, 1879-1884.

[6] Molchanov, P. A., Analysis of transistor negatrons’ performances in frequencytransformation mode//Izv, l/’UZov, Radioelectronics, Kiev, Ukraine, 1998. No. 5,pp. 64- 68.

[7] Molchanov, P. A., Nonlinear Model of Transistor Negatron//Electronic modeling,Kiev, Ukraine, 1998, 21(4), 21-25.

[8] A.C. 1286035 USSR, MKI-, Tunable Dielectric Resonator/Kusch, S. N., Molchanov,P. A., Dubov, E. V. and Lopato, V. G., Appl. 8.04.85; Publ. 22.09.86, Bulletin, 11 p.

International Journal of

AerospaceEngineeringHindawi Publishing Corporationhttp://www.hindawi.com Volume 2010

RoboticsJournal of

Hindawi Publishing Corporationhttp://www.hindawi.com Volume 2014


Active and Passive Electronic Components

Control Scienceand Engineering

Journal of



RotatingMachinery


Hindawi Publishing Corporation http://www.hindawi.com

Journal ofEngineeringVolume 2014

Submit your manuscripts athttp://www.hindawi.com

VLSI Design



Shock and Vibration


Civil EngineeringAdvances in

Acoustics and VibrationAdvances in



Electrical and Computer Engineering

Journal of

Advances inOptoElectronics

Hindawi Publishing Corporation http://www.hindawi.com

Volume 2014

The Scientific World JournalHindawi Publishing Corporation http://www.hindawi.com Volume 2014

SensorsJournal of


Modelling & Simulation in EngineeringHindawi Publishing Corporation http://www.hindawi.com Volume 2014


Chemical EngineeringInternational Journal of Antennas and

Propagation




Navigation and Observation



DistributedSensor Networks


active components based ondynamicdownloads.hindawi.com/journals/apec/2000/645972.pdf ·...

Documents