ㅊ - magnachip · apr. 2016. version 1.4 2 magnachip semiconductor ltd

Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd. 1

MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

ㅊ

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (1)

TC=25oC

ID

100.0

A TC=70

oC 94.0

TA=25oC 36.1

(3)

TA=70oC 28.8

(3)

Pulsed Drain Current IDM 400 A

Power Dissipation

TC=25oC

PD

78.1

W TC=70

oC 50.0

TA=25oC 5.5

(3)

TA=70oC 3.5

(3)

Single Pulse Avalanche Energy (2)

EAS 287 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (1)

Steady State RθJA 22.7 oC/W

Thermal Resistance, Junction-to-Case Steady State RθJC 1.6

MDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ

Features

VDS = 30V ID = 100A @VGS = 10V RDS(ON)

< 2.4 mΩ @VGS = 10V < 3.3 mΩ @VGS = 4.5V

100% UIL Tested 100% Rg Tested

General Description The MDU1511 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1511 is suitable device for DC/DC Converter and general purpose applications.

D

G

SPowerDFN56

S S S G G S S S

D D D D D D D D


MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDU1511RH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.8 2.7

Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1

μA TJ=55oC - - 5

Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1

Drain-Source ON Resistance RDS(ON)

VGS = 10V, ID = 28A - 2.0 2.4

mΩ TJ=125oC - 2.9 3.5

VGS = 4.5V, ID = 24A - 2.7 3.3

Forward Transconductance gfs VDS = 5V, ID = 10A - 45 - S

Dynamic Characteristics

Total Gate Charge Qg(10V)

VDS = 15V, ID = 28A, VGS = 10V

38.8 51.8 64.8

nC Total Gate Charge Qg(4.5V) 18.7 25.0 31.3

Gate-Source Charge Qgs - 9.9 -

Gate-Drain Charge Qgd - 9.4 -

Input Capacitance Ciss

VDS = 15V, VGS = 0V, f = 1.0MHz

2510 3347 4184

pF Reverse Transfer Capacitance Crss 246 328 410

Output Capacitance Coss 490 653 817

Turn-On Delay Time td(on)

VGS = 10V, VDS = 15V, ID = 28A, RG = 3.0Ω

- 11.2 -

ns Rise Time tr - 23.2 -

Turn-Off Delay Time td(off) - 45.6 -

Fall Time tf - 18.6 -

Gate Resistance Rg f=1 MHz - 1.0 2.0 Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 28A, VGS = 0V - 0.8 1.1 V

Body Diode Reverse Recovery Time trr IF = 28A, dl/dt = 100A/μs

- 33.8 50.7 ns

Body Diode Reverse Recovery Charge Qrr - 22.3 33.5 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 42.0A, VDD = 27V, VGS = 10V

3. T < 10sec.


MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage Variation with Source Current and

Temperature

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00.1

1

10

100

25

-IS [

A]

-VSD

[V]

0 1 2 3 4 50

4

8

12

16

20

VGS

, Gate-Source Voltage [V]

TA=25

※ Notes :

VDS

= 5V

I D, D

rain

Cu

rre

nt [A

]

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

※ Notes :

1. VGS

= 10 V

2. ID = 28.0 A

RD

S(O

N), (

Norm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tance

TJ, Junction Temperature [

oC]

2 3 4 5 6 7 8 9 100

5

10

15

20

25

30

※ Notes :

ID = 28.0A

TA = 25

RD

S(O

N) [

mΩ

],

Dra

in-S

ourc

e O

n-R

esis

tan

ce

VGS

, Gate to Source Volatge [V]

10 20 30 40 500

1

2

3

4

VGS

= 10V

VGS

= 4.5V

Dra

in-S

ourc

e O

n-R

esis

tance

[mΩ

]

ID, Drain Current [A]

0.0 0.5 1.0 1.5 2.00

10

20

30

40

50

5.0V

VGS

= 10V

8.0V

4.0V

3.0V

I D,

Dra

in C

urr

ent

[A]

VDS

, Drain-Source Voltage [V]


MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current

Vs. Case Temperature

Fig.11 Transient Thermal Response

Curve

0 5 10 15 20 250

500

1000

1500

2000

2500

3000

3500

4000

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Ca

pa

cita

nce

[pF

]

VDS


25 50 75 100 125 1500

10

20

30

40

50

60

70

80

90

100

110

120

130

140

150

I D,

Dra

in C

urr

ent

[A]

TA, Case Temperature [ ]

10-4

10-3

10-2

10-1

100

101

102

103

10-3

10-2

10-1

100

101

※ Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ JC * R

θ JC(t) + T

C

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JA(t

), T

herm

al R

esponse

t1, Rectangular Pulse Duration [sec]

10-1

100

101

102

10-1

100

101

102

103

1 ms

10 s

1 s

100 ms

DC

10 msOperation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max Rated

TC=25

I D, D

rain

Curr

ent [A

]

VDS


0 5 10 15 20 25 30 35 40 45 50 550

2

4

6

8

10

VDS

= 15V

※ Note : ID = 28A

VG

S,

Ga

te-S

ourc

e V

oltag

e [

V]

QG, Total Gate Charge [nC]


MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

Package Dimension

PowerDFN56 (5x6mm)

Dimensions are in millimeters, unless otherwise specified

Dimension MILLIMETERS

Min Max

A 0.90 1.10

b 0.33 0.51

C 0.20 0.34

D1 4.50 5.10

D2 - 4.22

E 5.90 6.30

E1 5.50 6.10

E2 - 4.30

e 1.27BSC

H 0.41 0.71

K 0.20 -

L 0.51 0.71

α 0° 12°


MD

U1

511

– S

ing

le N

-Ch

an

ne

l Tre

nch

MO

SF

ET

30

V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.

ㅊ - magnachip · apr. 2016. version 1.4 2 magnachip semiconductor ltd

Documents