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Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 80 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (1)

TC=25oC (Silicon Limited)

ID

250

A

TC=25oC (Package Limited) 120

TC=100oC (Silicon Limited) 158

TC=100oC (Package Limited) 120

Pulsed Drain Current IDM 480

Power Dissipation TC=25

oC

PD 312.5

W TC=100

oC 125

Single Pulse Avalanche Energy (2)

EAS 612.5 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (1)

RθJA 62.5 oC/W

Thermal Resistance, Junction-to-Case RθJC 0.4

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ

Features

VDS = 80V

ID = 120A @VGS = 10V

RDS(ON)

< 2.5 mΩ @VGS = 10V

100% UIL Tested

100% Rg Tested

General Description The MDP1930 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1930 is suitable device for Synchronous Rectification For Server and general purpose applications.

TO-220

D

G

S

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Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDP1930TH -55~150oC TO-220 Tube Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 80 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0

Drain Cut-Off Current IDSS VDS = 64V, VGS = 0V - - 1.0 μA

Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1

Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 50A - 2.0 2.5 mΩ

Forward Transconductance gfs VDS = 10V, ID = 50A - 115 - S

Dynamic Characteristics

Total Gate Charge Qg

VDS = 40V, ID = 50A, VGS = 10V

- 186.3 -

nC Gate-Source Charge Qgs - 56.3 -

Gate-Drain Charge Qgd - 38.5 -

Input Capacitance Ciss

VDS = 40V, VGS = 0V, f = 1.0MHz

- 12,222 -

pF Reverse Transfer Capacitance Crss - 51 -

Output Capacitance Coss - 2,123 -

Turn-On Delay Time td(on)

VGS = 10V, VDS = 40V, ID = 50A , RG = 3.0Ω

- 39.6 -

ns Rise Time tr - 24.2 -

Turn-Off Delay Time td(off) - 141 -

Fall Time tf - 54.2 -

Gate Resistance Rg f=1 MHz - 3.0 - Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.9 1.2 V

Body Diode Reverse Recovery Time trr IF = 50A, dl/dt = 100A/μs

- 92.8 ns

Body Diode Reverse Recovery Charge Qrr - 231.7 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited

2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 35.0A, VGS = 10V.

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Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage Variation with Source Current and

Temperature

0.0 0.3 0.6 0.9 1.2 1.5

1

10

100

TA=25

※ Notes :

VGS

= 0V

I DR,

Re

ve

rse

Dra

in C

urr

en

t [A

]

VSD

, Source-Drain voltage [V]

-50 -25 0 25 50 75 100 125 1500.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. VGS

= 10 V

2. ID = 50 A

RD

S(O

N),

(Norm

aliz

ed)

Dra

in-S

ourc

e O

n-R

esis

tance

TJ, Junction Temperature [

oC]

4 5 6 7 8 9 100

2

4

6

8

10

12

14

16

18

20

※ Notes :

ID = 50A

TA = 25

RD

S(O

N) [m

Ω],

Dra

in-S

ourc

e O

n-R

esis

tance

VGS

, Gate to Source Volatge [V]

0 10 20 30 40 50 60 70 80 90 1000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS

= 10V

Dra

in-S

ourc

e O

n-R

esis

tance [mΩ

]

ID, Drain Current [A]

0 1 2 3 4 5 6 7 80

10

20

30

40

50

60

70

80

90

100

VGS

, Gate-Source Voltage [V]

TA=25

※ Notes :

VDS

= 10V

I D,

Dra

in C

urr

en

t [A

]

0 1 2 3 4 50

20

40

60

80

100

120

140

160

180

20010 V

5.0 V

6.0 V

4.5 V

4.0 V

I D D

rain

Cu

rre

nt

[A]

VDS

, Drain-Source Voltage [V]

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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.

Case Temperature

Fig.11 Transient Thermal Response

Curve

25 50 75 100 125 1500

40

80

120

160

200

240

280

I D, D

rain

Curr

ent [A

]

TC, Case Temperature [ ]

10-5

10-4

10-3

10-2

10-1

100

101

10-5

10-4

10-3

10-2

10-1

100

※ Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ JC * R

θ JC(t) + T

C

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JA(t

), T

herm

al R

esponse

t1, Rectangular Pulse Duration [sec]

0 5 10 15 20 25 30 35 400

2000

4000

6000

8000

10000

12000

14000

16000

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Ca

pa

cita

nce

[p

F]

VDS

, Drain-Source Voltage [V]0 10 20 30 40 50 60 70 80 90 100110120 130140150160170 1801902000

2

4

6

8

10

VDS

= 40V

※ Note : ID = 50A

VG

S, G

ate

-Sourc

e V

oltage [V

]

QG, Total Gate Charge [nC]

10-1

100

101

102

10-1

100

101

102

103

1 ms

100 ms

10 ms

DC

100 us

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25

I D,

Dra

in C

urr

en

t [A

]

VDS

, Drain-Source Voltage [V]

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Package Dimension

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.