x r Á j^ h.? ! jj Ä:zÚ u 9 ¿ e · 2017. 12. 21. · satoru noge. abstract, tin sulfide (sns) is...
TRANSCRIPT
![Page 1: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are](https://reader035.vdocuments.us/reader035/viewer/2022071502/6121e5a1975a2e0ec14a19b7/html5/thumbnails/1.jpg)
Study of SnS film formation by chemical bath deposition
Satoru Noge
Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are testing preparation thin film by using Chemical bath deposition (CBD) method. In this study, we were considering SnS thin films preparation structure as setting effect of surface processing. As a result, it is found that the good conditions are deposition time: 3h, agitation speed: 720rpm and immersed position: the edge of beaker. It is confirmed that the substrate surface influence deposition of SnS by cleaning. Therefore, it is showed to prepare good flat films in reproducibility as first layer.
Key Words: SnS, Chemical bath deposition
Department of Electrical and Electronics Engineering
CBD CBD
SnSSnS Sn
S 2 SnS2
.
SnCl2 Sn2+ + 2Cl- (1) Sn2+ + TEA Sn[TEA]2+ (2) CH3CSNH2 + OH- HS- + CH3CONH2 (3) Sn[TEA]2++ HS- + OH- SnS + TEA + H2O (4)
100ml 2.26g ( ) 7.5ml
24.5ml0.75g 30ml25% 6.2ml
100ml SnS
60
1 CBD 2 Sn S 2
25沼津工業高等専門学校研究報告第52号,2018年1月
![Page 2: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are](https://reader035.vdocuments.us/reader035/viewer/2022071502/6121e5a1975a2e0ec14a19b7/html5/thumbnails/2.jpg)
(a)Sn (b)S (c)SnS
SnSSnS
( : 1.0±0.05mm : 76 26mm )
3 CBD SnS
20 A B3
A B3 4 A
B
SnS
SnSSnS
1 3 531 3 5
55000 6
(Dektak XT)Ra
Ra
7SnS
SnS ZnORa
26 沼津工業高等専門学校研究報告 第 52 号
![Page 3: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are](https://reader035.vdocuments.us/reader035/viewer/2022071502/6121e5a1975a2e0ec14a19b7/html5/thumbnails/3.jpg)
Ra (nm)
1 116.4
3 214.6
5 338.4
7
120rpm720rpm
8
8 (3 )
120rpmSnS
100ml A B9 .
chemical bath
A B 10
9
11 11A B
A : B :
10
11
SnSpH
pH.
27溶液成長法を用いたSnS膜形成法に関する基礎検討
![Page 4: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are](https://reader035.vdocuments.us/reader035/viewer/2022071502/6121e5a1975a2e0ec14a19b7/html5/thumbnails/4.jpg)
SnS3
720rpm
pH
.
SnS
29
3
[1] A. Tanusevski, D. Poelman, Sol. Energy Mater. Sol. Cells 80 (2003)
[2] Yu Kawano, Jakapan Chantana, Takashi Minemoto, Current Applied Physics 15 (2015) 897-901.
[3] K. Santhosh Kumar, C. Manoharan, S. Dhanapandian, A. Gowri Manohari, T. Mahalingamb, Optik 125 (2014) 3996–4000.
[4] A. Supee, Y. Tanaka, M. Ichimura, Materials Science in Semiconductor Processing 38 (2015) 290–297.
[5] P.Sinsermsuksakul, J.Heo, W.Noh, A.S.Hock, R.G.Gordon, Adv. Energy Mater. 1 (2011) 1116-1125
[6] SnS114. (2014). 125-128.
[7] 116(2016), 1-4
28 沼津工業高等専門学校研究報告 第 52 号