x r Á j^ h.? ! jj Ä:zÚ u 9 ¿ e · 2017. 12. 21. · satoru noge. abstract, tin sulfide (sns) is...

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Ř Œ Ė ǁ Ŋ ^ Ũ . ? ! ƌ ć Ė Ŋ J DŽ : Z Ú ŵ Ĺ ƞ ƿŅ đ Study of SnS film formation by chemical bath deposition Satoru Noge Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are testing preparation thin film by using Chemical bath deposition (CBD) method. In this study, we were considering SnS thin films preparation structure as setting effect of surface processing. As a result, it is found that the good conditions are deposition time: 3h, agitation speed: 720rpm and immersed position: the edge of beaker. It is confirmed that the substrate surface influence deposition of SnS by cleaning. Therefore, it is showed to prepare good flat films in reproducibility as first layer. Key Words: SnS, Chemical bath deposition $ # mkJ2]ZæDž°ūljıĤKCG9E()ħÁ û¢KCF-Zų¾op!3űX[E.Zǖ! L{ whu3 F-YǕ°ÎǦġU GmkWYUǏ.7G2XǕŀæDžljňıĤ G9EįĊ8[E.ZǖQ?ÅĤGIZop!Gųǐ LǕ׳JƧöJìÖ:Z7G2Xî¥J±ĘF4Ǖ ŃĐUI.KFŦáNKĈnjUýI.G./·śUĜCǖ 7K ! Kƒƌ¾ęƔ-Z.LvÄƌćĖęƔKǂ ūLǕ7KıĤKñŨ¾JÍ6EÊĿIƤǍGƋ0X[ Zǖ! ƒƌLůżƑŰŊǕo¶ƜŊǕljŰ ÞƖŊǕÅëÿÛźIHKĥŊ^Ũ.Z7GFČX [E.ZǖİŲŻòFLŘŒĖǁ % #"$%"! Ŋ^Ũ.? ! ƒƌ£Ė^ơRE .Zǖ ŊLƖƊ3ÃƃF-YǕNJůżqoF-Z ?TƗƴK¡kov¾3ƙƯTZǖ929ǕƒƌKĖǁJ ǁĩǃ22Z7GǕQ?Ûź9?ƌKõą3¿¶F-YǕ ƎèIljņŬŠĐ^ČX[I.G./ÑǍ3-B?ǖ¯K ÜÏFLǕÚijG ! ƀëGKſÿFKƇË3ƾƘF- ZGƋ0ǕoGIZÚijJ×´ť^Ħ9ǕƕNj^Ġ ƪ9?ÚijJ ! ^Ûź8<Z7GFƇĪƀëKŰ» G®àõąKÍJC.E=K ĭ½Đ^ñǎŬJĹƞ9ÜÏ9?+İÜÏFLǕ Ŋ KñĦJ16Z³ŤĐKŴ§Jø:ZvoIHÚ ŵŬIƨJC.EµūıĤKŧĖVÚijKŌŏ*ƼƊ* ŘŒKğěIHqoŁdžFKŹ,K|rJ ǔ ljņljëāíŷ Department of Electrical and Electronics Engineering ø9EƤǍ^ĨŴJ:Z7G^Ţ.G9EơƓñǎ^Ɠ B?KF=KƇĶJC.EÜÏ:Zǖ % # CBD ŊGLǕŒŮŊKCFƇĪĖ¶^ŘêJŘ29 EŘŒG9Ǖ=72XƇĪ^Ĵµ8<ZĥŊF-ZǖCBD Ŋ^Ũ.? SnS ƌLƟJŶ:ÆďJWYŧĖ8[Zǖ ŘŒJÚij^ő9Ǖ SnS ^Ûź8<ƒƌ^£Ɨ:Zǖ Sn ŖG S ŖKŘŒ^ŨĒ9Ǖ 2 Œ^œË:Z7GF SnS 2 ŒœËŭċ2XÆď3éQYǕĩǃGGUJƇĪƀ ĉ3âå:ZǖÆďƹŸ^JŶ:. SnCl2 Sn 2+ + 2Cl - (1) Sn 2+ + TEA Sn[TEA] 2+ (2) CH3CSNH2 + OH - HS - + CH3CONH2 (3) Sn[TEA] 2+ + HS - + OH - SnS + TEA + H2O (4) Q;Ǖ 100ml }fF 2.26g Kß¾:;(')^ 7.5ml K`qvFŘƜ:Zǖ8XJvcrz` 24.5ml ^¼0ğě9?ǖƈ.EU/CK}fF 0.75g Kte`qv`w^ƃŇƂ 30ml FŘƜ9?ċǕ 25%`y`Ň^ 6.2ml ¼0ğě9?ǖ=[>[KŘŒ ^œË9ǕƃŇF 100ml JƥĢ9 SnS ŘŒG9?ǖ7K ŘŒJÚij^ő9ǕŘŒK±B?}f^bdr{ oorF 60&J¼Ş9ğě8<?ǖÚijLǕĒK ĩǃŘŒJő9ǕÈYµ9?-GƃŇFŌ.Ŏ9ƛ÷9?ǖ Õ 1 J CBD ŊKƖƊĻŪÕǕÕ 2 J Sn ŖǕ S ŖǕ 2 Œœ ËŭċKŘŒKĽë^Ŷ:ǖ 25 沼津工業高等専門学校研究報告 第 52 号,2018 年 1 月

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Page 1: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are

Study of SnS film formation by chemical bath deposition

Satoru Noge

Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are testing preparation thin film by using Chemical bath deposition (CBD) method. In this study, we were considering SnS thin films preparation structure as setting effect of surface processing. As a result, it is found that the good conditions are deposition time: 3h, agitation speed: 720rpm and immersed position: the edge of beaker. It is confirmed that the substrate surface influence deposition of SnS by cleaning. Therefore, it is showed to prepare good flat films in reproducibility as first layer.

Key Words: SnS, Chemical bath deposition

Department of Electrical and Electronics Engineering

CBD CBD

SnSSnS Sn

S 2 SnS2

.

SnCl2 Sn2+ + 2Cl- (1) Sn2+ + TEA Sn[TEA]2+ (2) CH3CSNH2 + OH- HS- + CH3CONH2 (3) Sn[TEA]2++ HS- + OH- SnS + TEA + H2O (4)

100ml 2.26g ( ) 7.5ml

24.5ml0.75g 30ml25% 6.2ml

100ml SnS

60

1 CBD 2 Sn S 2

25沼津工業高等専門学校研究報告第52号,2018年1月

Page 2: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are

(a)Sn (b)S (c)SnS

SnSSnS

( : 1.0±0.05mm : 76 26mm )

3 CBD SnS

20 A B3

A B3 4 A

B

SnS

SnSSnS

1 3 531 3 5

55000 6

(Dektak XT)Ra

Ra

7SnS

SnS ZnORa

26 沼津工業高等専門学校研究報告 第 52 号

Page 3: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are

Ra (nm)

1 116.4

3 214.6

5 338.4

7

120rpm720rpm

8

8 (3 )

120rpmSnS

100ml A B9 .

chemical bath

A B 10

9

11 11A B

A : B :

10

11

SnSpH

pH.

27溶液成長法を用いたSnS膜形成法に関する基礎検討

Page 4: X R Á J^ h.? ! JJ Ä:ZÚ u 9 ¿ E · 2017. 12. 21. · Satoru Noge. Abstract, Tin sulfide (SnS) is attention substitute silicon (Si) as one of the solar cell absorber layer. We are

SnS3

720rpm

pH

.

SnS

29

3

[1] A. Tanusevski, D. Poelman, Sol. Energy Mater. Sol. Cells 80 (2003)

[2] Yu Kawano, Jakapan Chantana, Takashi Minemoto, Current Applied Physics 15 (2015) 897-901.

[3] K. Santhosh Kumar, C. Manoharan, S. Dhanapandian, A. Gowri Manohari, T. Mahalingamb, Optik 125 (2014) 3996–4000.

[4] A. Supee, Y. Tanaka, M. Ichimura, Materials Science in Semiconductor Processing 38 (2015) 290–297.

[5] P.Sinsermsuksakul, J.Heo, W.Noh, A.S.Hock, R.G.Gordon, Adv. Energy Mater. 1 (2011) 1116-1125

[6] SnS114. (2014). 125-128.

[7] 116(2016), 1-4

28 沼津工業高等専門学校研究報告 第 52 号