u = kt/q ~ 25mv (300k) p-n junction diode nonlinear element
TRANSCRIPT
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R=10kΩ, Is = 100fA
P-N Junction Diode ! Nonlinear Element UT = kT/q ~ 25mV (300K)
260µA
Gain=1/2
Crossover point: R=Rd (gain=1/2) (~ 0.44V)
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Application of Diodes: • Full Wave Rectification • AC to DC supply Conversion
If Vin > 0
If Vin < 0
RC 1st Order LPF
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P-N Junction Diode ! Semiconductor Physics • Bandgap (Si ~ 1.1eV): free carrier concentrations Electron (- charge) Holes (+ charge) Movement through available states Doping changes electron, hole concentration (free ions)
• Drift current: Electric field moving charge particles (Ohm’s law)
• Diffusion current: High-concentration to low region
• Exponential distribution of carriers (Fermi-Dirac)
• Voltage-Controlled Barrier Enables carriers above barrier energy
Depletion Region
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Voltage Amplifiers: Voltage Controlled, Voltage Sources
Input Gate Voltage: Voltage Controlled, Current Sources
Fixed Gate Voltage: Current Source
Transimpedance Amps: Current Controlled, Voltage Sources
Current Amplifiers: Current Controlled, (Norton Amplifier) Current Sources
How to get independent and dependent sources?
MOSFET Transistor