tsv technology for 2.5d & 3d ic solutions

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TSV Technology for 2.5D & 3D IC Solutions Muster Wang Corporate RD ASE Group Nov. 9 , 2011 Presented by

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Page 1: TSV Technology for 2.5D & 3D IC Solutions

TSV Technology for 2.5D & 3D IC Solutions

Muster Wang

Corporate RD

ASE Group

Nov. 9 , 2011

Presented by

Page 2: TSV Technology for 2.5D & 3D IC Solutions

2.5D & 3D SiPs to Meet Product Trends

- Function Integration & Form Factor

PKG-on-PKG

QFP

Stack CSP

FC + WB

FC BGA

3D TSV Stack

2.5D & 3D Integration

3D CoC Stack

2© 2011 ASE Group. All rights reserved.

Page 3: TSV Technology for 2.5D & 3D IC Solutions

3

TSV Potential Applications

Vertical interconnect minim

um pitch

(µm)

Multi-level 3D IC (CPU + Cache + DRAM + Analog + RF + Sensor + I/O)

3D Stacked Memory (NAND, DRAM, …)

2007 2009 2012 >2014

Low Density 3D via Chip-level Bonding

Logic (Multicore Processor/ BB ASIC with Cache Memory)

Image Sensor

Digital Signal Processor

Via size 50~100µm

Via size~5-30µm

Via size=<5µm

CPU

Cache memory

Via size=<2µmCPU

Cache Memory

DRAM / NVM

Analog

RF Power

Sensor I/O

Sensor I/O

High Density 3D via Wafer-level Bonding

CMOS Image Sensor (Sensor + DSP + RAM)

1000

1

10

100

Vertical Device on CMOS

Sources : EMC-3D, IBM & ASE Data

Via Last TSV (Si interposer-2.5D)

ASIC

Si Interposer

Substrate

ASIC

Si Interposer

Substrate

© 2011 ASE Group. All rights reserved.

Page 4: TSV Technology for 2.5D & 3D IC Solutions

4

Si Interposer Benefits

� Alleviate ELK/ ULK stress in large die

� Bridge organic substrate gap for dense & complex substrate

� Package advanced wafer node w/ tighter bump pitch

� Integrate multi-chip SiP platform

: Alternative SoC Solution (Allow IC designer to partition chips and re-organize in Si interposer platform)

: Provide platform for heterogeneous chip integration(IPD, MEMS, Sensor…)

Si - Si to minimize CTE impact on ELK

Match advanced wafer pitch

Fan-out to match existing substrate capability

Chip 1 Chip 2

Si Interposer

© 2011 ASE Group. All rights reserved.

Page 5: TSV Technology for 2.5D & 3D IC Solutions

5

2.5D Si Interposer- IC scale vs Substrate scale

Packaging gap

Time

Size

sca

ling

IC scale

Substrate scale

Die size (pitch) ↓Die cost ↓Substrate cost ↑

Die size (pitch) ↓Die cost ↓Substrate cost ↓Si interposer cost ↑

© 2011 ASE Group. All rights reserved.

Page 6: TSV Technology for 2.5D & 3D IC Solutions

6

FC Bump Pitch Roadmap

Time

Pitch (um)

2008 2009 2010 2011 2012

200

100

150

50

CtS

Substrate Applicable

CtC

Si Interposer Applicable

50um40um 40um

85um

150 um

120um125 um

135 um

Microbump Bump Pitch

Chip on Si-carrier to Resolve

1. Substrate Technology Gap & Cost

2. Cu-Low K Delam for N28 & above

3. Cost Competitiveness

C4 Bump Pitch

© 2011 ASE Group. All rights reserved.

Page 7: TSV Technology for 2.5D & 3D IC Solutions

7

Si Interposer Enabling Chip Integration

Diplexer Balance Filter Balun

+

� Alternative SoC Solution (Allow IC designer to partition chips and

re-organize in Si interposer platform)

� Provide platform for heterogeneous chip integration

(IPD, MEMS, Sensor…)

© 2011 ASE Group. All rights reserved.

IPD MEMS

Page 8: TSV Technology for 2.5D & 3D IC Solutions

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2.5D Si Interposer Key Challenges

� Si Interposer Sourcing & Ownership

� Logistic & interface standardization

� Warpage control

� Cost

� Yield

� Known-Good Si Interposer

© 2011 ASE Group. All rights reserved.

Page 9: TSV Technology for 2.5D & 3D IC Solutions

9

2.5D Si Interposer Challenge – Warpage Control

M1≠M2 ���� Warpage issue

Neutralsurface

Moment-2

Moment-1

© 2011 ASE Group. All rights reserved.

Page 10: TSV Technology for 2.5D & 3D IC Solutions

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Si Interposer Package Reliability

� Reliability

- 3 lots MSL3/260C + TCT3000 & HAST504 passed.

8x8 mm2 ASIC (65nm lowK)

12x12 mm2 Si Interposer

2000+ TSVs

35x35 FC BGA, 1/2/1 sub

© 2011 ASE Group. All rights reserved.

Page 11: TSV Technology for 2.5D & 3D IC Solutions

11

Thank You

www.aseglobal.com

© 2011 ASE Group. All rights reserved.