trends in semiconductor technology
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Trends in semiconductor technology. Jurriaan Schmitz Chairholder of Semiconductor Components MESA+ institute University of Twente. The Microstrip Gas Counter and its application in the ATLAS inner tracker. Fragment of my introductory talk, October 14, 1994: - PowerPoint PPT PresentationTRANSCRIPT
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 1
Trends in semiconductor technology
Jurriaan SchmitzChairholder of Semiconductor Components
MESA+ instituteUniversity of Twente
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 2
The Microstrip Gas Counter and its application in the ATLAS inner tracker
Fragment of my introductory talk, October 14, 1994:
We want to use the MSGC in an experiment named ATLAS. Unfortunately this will only be conducted from the year 2002 onwards.
DISCLAIMER: Consider my upcoming statements on the future of CMOS as predictive as the above
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 3
Contents
• MOSFET basics• The start of MOS technology• Moore’s Law• The ITRS roadmap• Modern CMOS technology• The challenges ahead• The role of academia
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 4
Semiconductor essentials
n-type doped semiconductore.g. silicon with phosphorus impurityelectrons determine conductivity
p-type doped semiconductore.g. silicon with Al impurityholes determine conductivity
p-n junction: current can only flow one way!Semiconductor diode
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 5
The field effect
+ + + + + + + +accumulation
- - - -depletion
- - - - - - - - - -inversion
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The field effect transistor
I d (
A)
VG (V)
- - - - - - - - - -
Gate voltage controls the current between source and drain
source draingate
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The first transistor (re-created)
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Kilby’s first IC1.5 mm x 1 mm
Germanium
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Fairchild’s flip-flop 19614 transistors, 5 resistorsNotice metal interconnect
1.5 mm
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RCA, 1962Logic chip, 16 transistors
First MOSFET IC
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1960 1965 1970 1975100
101
102
103
104
105
Year
GordonMoore 1965
Moore’s Law (1965)
Progress in technology:At the same cost, one can add more and more components on a chip.The number of components doubles each 1.5 years.
Num
ber
of c
ompo
nent
s pe
r ch
ip
Fairchild
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1976: Apple I motherboard1981: The first PC: IBM’s 5150 PCIntel microprocessorDOS operating system
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INTEL microprocessors
Year
Nu
mb
er o
f tr
ansi
sto
rs
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Reflections on Moore’s Law
• Exponential growth with time is universal:passenger airplanes, cargo ships, hard disk drives, nuclear fusion, …Collider energy? Luminosity?
• …but only for a while!• So: it’s not particularly Moore’s; and it’s not a law.
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Technology driven exponential progressV
elo
city
(km
/ho
ur)
year
Wright brothers
Concorde
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Impact of Moore’s Law
• Device dimensions shrink (scaling)• Cost per function decreases (~ 35% per year)• Power per function decreases• Speed increases• … application field of semiconductors increases!
(e.g. personal computers, handheld telephones, solid state audio, speech recognition)
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NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 20
You might still consider this big…
Modern transistor Influenza virus
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What does CMOS scaling bring us?
Lower power operationCheaper integrated circuits (25% p.y.)
100 200 300 500 70010
20
30
50 70 100
200
Gate Length (nm)
f T (
GH
z)
Higher frequency operation
1950, 6$ 2000, 145$
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 22
But also…
Higher price for small quantities
Reduced static noise marginIncreased gate leakage
CMOS generation (nm)
180 120 90
J (A
/cm
2)
1e-8
1e-7
1e-6
1e-5
1e-4
1e-3
1e-2
1e-1
1e+0
1e+1
1e+2
1e+3
NMOSPMOS
• # Masks increases
• Mask cost increases
• Fab COO increases
• Lower supply voltage• Smaller devices, larger fluctuations
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Transistor Technology
Well Technology
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Transistor downscaling
• Reduction of gate length (lithography)• Increase of impurity concentrations• Decrease of gate dielectric• Reduction of source and drain dimensions
Brews’ Law:
Lmin = 0.4 [ xj tox (Ws + Wd)2 ]1/3
• Lmin: minimum gate length with normal behaviour
• xj: source and drain depth
• tox: gate dielectric thickness
• Ws, Wd: depletion widths of source and drain junctions
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Lithography
EUV prototype
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The interconnect shrink
0.5 µm technology 0.1 µm technology
Al
SiO2
W
Cu
Low-K
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The Red Brick Wall(s)
Further scaling of the circuit:• Atomic dimensions are in sight• Gate dielectric needs replacement• Gate electrode needs replacement• Interconnect becomes a speed and power bottleneck
The economy:• Fabrication plants get too expensive to build (3 B$)• Semiconductor market is too big to grow much further
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The power problem
Power per transistor decreases; but not the power density!
Fortunately, most ICs do better than Pentiums…
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 30
Atomic dimensions and the loss of information
Dissipation problems
Quantum fluctuations
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 31
Semiconductor economy
Traditional scaling can no longer facilitate the strong market growth seen in the past
1) The semiconductor industry has acquired a strong position in the total electronics market
2) New technology generations show progressively less benefits over their predecessor
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 32
The design and verification gaps
Do we want nanotechnology?
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Semiconductor market development
0
50
100
150
200
250
19
97
19
98
19
99
20
00
20
01
20
02
Ann
ual t
urno
ver
(G$)
Memories
Microcomponents
Digital logic
Analog IC's
Discretes
Others
No clear trend - a mature market?
2000
2001
Actual (Dataquest)
2002 Forecast (6% growth)
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Research at MESA+
MESA+: 18 participating chairs from TN, CT, and EL
Nanotechnology, microsystems, materials science and microelectronics
~ 400 people, including over 200 PhD’s and postdocs
Yearly turnover ~ 31M€• 1250 m2 fully equipped clean room• A materials analysis laboratory• Several satellite laboratories
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 35
Running projects
High-kALCVD
Cooldielectrics
IC-technology
Cu barriersALCVD
ESD inCMOS
Devices Reliability
MicroGas sensors
Deuteriumdielectrics
STW
Philips
EU
E-T-M ininterconnect
Plasmadamage
1/f noise STWSTWPhilips
FOM FOM
Reliable RF STW
Philips
Light fromSilicon
STW
Ends soonNEW NEW
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 36
Submitted new projects
SmartOxides
IC-technology
Low Tempdevices
NBTI
Devices Reliability
High Kreliability
Vulcano STWSTW
Philips
STW
Planned new projects
EU
NIKHEF, July 4, 2003 Jurriaan Schmitz, University of Twente 37
Outlook
• There is still plenty of room at the bottom• Standard CMOS scaling will end soon• New technologies will emerge; NOT for ordinary computing• Light-silicon interaction: huge potential, physics?• Novel devices may well include particle detectors…