transistors for vlsi, for wireless: a view forwards ......johann rode prateek choudhary pengyu long...
TRANSCRIPT
![Page 1: Transistors for VLSI, for Wireless: A View Forwards ......Johann Rode Prateek Choudhary Pengyu Long Prof. Michael Povolotski Prof. Gerhard Klimeck III-V EPI Brian ... small delay CV](https://reader033.vdocuments.us/reader033/viewer/2022041520/5e2dee715982a17624113bf2/html5/thumbnails/1.jpg)
1
Transistors for VLSI, for Wireless:
A View Forwards Through Fog
Mark Rodwell, UCSB
Plenary, Device Research Conference, June 22, 2015, Ohio State
InP HBT: J. Rode**, P. Choudhary, A.C. Gossard, B. Thibeault, W. Mitchell: UCSB M. Urteaga, B. Brar: Teledyne Scientific and Imaging
III-V MOS C.-Y. Huang, S. Lee*, A.C. Gossard, V. Chobpattanna, S. Stemmer, B. Thibeault, W. Mitchell : UCSB
Low-voltage devices P. Long, E. Wilson, S. Mehrotra, M. Povolotskyi, G. Klimeck: Purdue
Now with: *IBM, **Intel
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2
Co-authors
In(Ga)As MOS THz InP HBT
Steep FET design Process
Cheng-Ying Huang
Sanghoon Lee
Varista Chobpattanna
Prof. Susanne Stemmer
Johann Rode
Prateek Choudhary
Pengyu Long
Prof. Michael Povolotski
Prof. Gerhard Klimeck
III-V EPI
Brian Thibeault
Bill Mitchell
Prof. Art Gossard
..and at Teledyne (HBT): Miguel Urteaga, Bobby Brar
Evan Wilson
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What's a Professor to do ?
Transistors approaching scaling limits
Process technology: it's getting hard. extreme resolution, complex process, many steps exhausted students
How can we steer the future of VLSI, of wireless ?
Beyond yet another new semiconductor (be it 3D or 2...)
let's explore other options.
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4
VLSI
4
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What does VLSI need ?
Small transistors: plentiful, cheap
Small transistors→ short wires small delay CVDD /I low energy CVDD
2/2
Small-area electronics is key
Low leakage current thermal: Ioff > Ion*exp(-qVDD/kT) want low VDD yet low Ioff.
0 0.1 0.2 0.3 0.4 0.50
200
400
600
800
1000
Vgs
I d, A
mps/m
ete
r
0 0.1 0.2 0.3 0.4 0.510
-1
100
101
102
103
Vgs
60
mV/decade
Want: Large dI/dV above threshold Steeper than thermal below threshold
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First: Steep-subthreshold-swing transistors
Characteristics steeper than thermal→ lower supply voltage
0 0.1 0.2 0.3 0.4 0.50.1
1
10
100
1000
Vgs
60
mV/decade
0 0.1 0.2 0.3 0.4 0.50
200
400
600
800
1000
Vgs
I d, A
mps/m
ete
r
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Tunnel FETs: truncating the thermal distribution
Source bandgap truncates thermal distribution
J. Appenzeller et al., IEEE TED, Dec. 2005
T-FET
Normal
Must cross bandgap: tunneling
Fix (?): broken-gap heterojunction
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Tunnel FETs: are prospects good ?
Useful devices must be small
Quantization shifts band edges→ tunnel barrier
Band nonparabolicity increases carrier masses
Electrostatics: bands bend in source & channel
What actual on-current might we expect ?
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Tunneling Probability
barrier
barrier
*2 where),2exp(
barrier) square (WKB,y Probabiliton Transmissi
EmTP
barrier thick 4nm afor %1
barrier thick 2nm afor %10
barrier thick 1nm afor %33
:Then
eV 2.0 ,06.0* :Assume 0
P
Emm b
For high Ion, tunnel barrier must be *very* thin.
~3-4nm minimum barrier thickness: P+ doping, body & dielectric thicknesses
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T-FET on-currents are low, T-FET logic is slow
-1.5
-1
-0.5
0
0.5
1
1.5
2
5 10 15 20 25
En
erg
y, eV
position, nm10
-310
-210
-110
0
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
Transmission
En
erg
y(e
V)
3.0%
NEMO simulation: GaSb/InAs tunnel finFET: 2nm thick body, 1nm thick dielectric @ er=12, 12nm Lg
10-5
10-4
10-3
10-2
10-1
100
101
102
0 0.1 0.2 0.3 0.4 0.5 0.6
dra
in c
urr
en
t, A
/m
gate-source bias, volts
60mV/dec.
10 mA/mm
Experimental: InGaAs heterojunction HFET; Dewey et al, 2011 IEDM, 2012 VLSI Symp.
~15 mA/mm @0.7V
Low current → slow logic
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11
Resonant-enhanced tunnel FET Avci & Young, (Intel) 2013 IEDM
2nd barrier: bound state
dI/dV peaks as state aligns with source
improved subthreshold swing.
Can we also increase the on-current ?
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12
Electron anti-reflection coatings
Tunnel barrier: transmission coefficient < 100% reflection coefficient > 0% want: 100% transmission, zero reflection familiar problem
Optical coatings reflection from lens surface quarter-wave coating, appropriate n reflections cancel
Microwave impedance-matching reflection from load quarter-wave impedance-match no reflection Smith chart.
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T-FET: single-reflector AR coating
Peak transmission approaches 100%
Narrow transmission peak; limits on-current
10-3
10-2
10-1
100
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
TransmissionE
ne
rgy(e
V)
TFET
TFET+ one barrier10
-5
10-4
10-3
10-2
10-1
100
101
102
0 0.1 0.2 0.3 0.4 0.5
dra
in c
urr
ent,
A/m
gate-source bias, volts
60mV/dec.
TFET
+one barrier
Can we do better ?
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Limits to impedance-matching bandwidth
-7
-6
-5
-4
-3
-2
-1
0
1
0 5 10 15 20
Tra
nsm
issio
n,
dB
Frequency, GHz
1, 2, 3 sections
Microwave matching: More sections→ more bandwidth Is there a limit ?
Bode-Fano limits R. M. Fano, J. Franklin Inst., Jan. 1960
Bound bandwidth for high transmission example: bound for RC parallel load→ Do electron waves have similar limits ?
0
2||||
1ln
RCd
Yes ! Schrödinger's equation is isomorphic to E&M plane wave. Khondker, Khan, Anwar, JAP, May 1988
T-FET design→ microwave impedance-matching problem Fano: limits energy range of high transmission Design T-FETs using Smith chart, optimize using filter theory Working on this: for now design by random search
)/*)(/()( wherepower,currenty probabilit , , , / xjmxIVfhE *
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15
T-FET with 3-layer antireflection coating
-1.5
-1
-0.5
0
0.5
1
1.5
2
5 10 15 20 25 30 35
En
erg
y, e
V
position, nm10
-310
-210
-110
00.1
0.15
0.2
0.25
Transmission
En
erg
y(e
V) 3-layer
0-layer
10-5
10-4
10-3
10-2
10-1
100
101
102
0 0.1 0.2 0.3 0.4 0.5 0.6
dra
in c
urr
en
t, A
/m
gate-source bias, volts
P-GaSb/N-InAs
tunnel FET
single layer
triple layer
60mV/dec.
Interim result; still working on design
Simulation
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16
Source superlattice: truncates thermal distribution
Gnani, 2010 ESSDERC
M. Bjoerk et al., U.S. Patent 8,129,763, 2012. E. Gnani et al., 2010 ESSDERC
Proposed 1D/nanowire device:
Gnani, 2010 ESSDERC:
simulation
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17
Planar (vs. nanowire) superlattice steep FET Long et al., EDL, Dec. 2014
Planar superlattice FET superlattice by ALE regrowth easier to build than nanowire (?)
Performance (simulations): ~100% transmission in miniband. 0.4 mA/mm Ion , 0.1mA/mm Ioff ,0.2V
Ease of fabrication ? Tolerances in SL growth ? Effect of scattering ?
simulation
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18
What if steep FETs prove not viable ?
Instead, increase dI/dV above threshold. dI/dV: a.k.a. transconductance, gm. Reduced voltage, reduced CV2
0 0.1 0.2 0.3 0.4 0.50
200
400
600
800
1000
Vgs
I d, A
mps/m
ete
rSteep FETs will not be easy.
0 0.1 0.2 0.3 0.4 0.50.1
1
10
100
1000
Vgs
60
mV/dec.
First: III-V MOS as (potential) high-(dI/dV) device
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19
Why III-V MOS ?
III-V vs. Si: Low m*→ higher velocity. Fewer states→ less scattering → higher current. Then trade for lower voltage or smaller FETs.
Problems: Low m*→ less charge. Low m* → more S/D tunneling. Narrow bandgap→ more band-band tunneling, impact ionization.
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20
In(Ga)As: low m*→ high velocity → high current (?)
Ballistic on-current: Natori, Lundstrom, Antoniadis (Rodwell)
torsemiconduc
channel
ox 2
1
ee
TT
c
ox
equiv
valleys# g
More current unless dielectric, and body, are extremely thin.
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
norm
aliz
ed d
rive c
urr
en
t K
1
m*/mo
g=2
EET=1.0 nm
0.6 nm
0.4 nm
g=1
EET=Tox
eSiO2
/eox
+Tchannel
eSiO2
/2echannel
In(Ga)As thin {100} Si
2/3*
,
2/1*
1
2/3
1
)/()/(1
, V 1m
mA84
oequivodos
o
thgs
mmgcc
mmgK
VVKJ
m
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21
Excellent III-V gate dielectrics
-0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.710
-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
|Ga
te L
ea
ka
ge
| (A
/cm
2)
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
10-5
10-4
10-3
10-2
10-1
100
101
SSmin
~ 61 mV/dec.
(at VDS
= 0.1 V)
SSmin
~ 63 mV/dec.
(at VDS
= 0.5 V)
Dot : Reverse Sweep
Solid: Forward Sweep
Lg = 1 mm
61 mV/dec Subthreshold swing at VDS=0.1 V
Negligible hysteresis
2.5nm ZrO2
1nm Al2O3 2.5nm InAs
V. Chobpattanna, S. Stemmer FET data: S Lee, 2014 VLSI Symp.
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Record III-V MOS
S. Lee et al., VLSI 2014
10 100
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
S. Lee, VLSI 2014
J. Lin, IEDM 2013
T. Kim, IEDM 2013
Intel, IEDM 2009
J. Gu, IEDM 2012
D. Kim, IEDM 2012
I on (
mA
/mm
)
Gate Length (nm)
VDS
= 0.5 V
Ioff
=100 nA/mm
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.510
-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
gm (
mS
/mm
)
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0L
g = 25 nm
SS~ 72 mV/dec.
SS~ 77 mV/dec.
Ion= 500 mA/mm at Ioff
=100 nA/mm
and VD=0.5V
Vertical Spacer
N+ S/D
Lg~25 nm
record for III-V
= best UBT SOI silicon
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23
Double-heterojunction MOS: 60 pA/mm leakage
• Minimum Ioff~ 60 pA/μm at VD=0.5V for Lg-30 nm
• 100:1 smaller Ioff compared to InGaAs spacer
• BTBT leakage suppressedisolation leakage dominates
Lg-30nm
C. Y. Huang et al., IEDM 2014
Lg-30nm
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24
III-V MOS @ Lg = ???
Courtesy of S. Kraemer (UCSB)
Huang et al., this conference
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25
High-current III-V PMOS
nm thickness [110]-oriented PMOS channels→ low transport mass
Very low m* Current approaching NMOS finFETs are naturally [110]
Silicon PMOS: Wang et al., IEEE TED 2006 (Intel) III-V: S. Mehrotra (Purdue), unpublished
simulation
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26
Minimum Dielectric Thickness & Gate Leakage
-6
-5.5
-5
-4.5
-4
-3.5
-3
-2.5
-2
eV
fro
m v
acu
um
leve
l
Si
InGaAs HfO2
TiO2
Ec
Ev
er ~20 e
r ~40
barrier
1
barrier *2 where),2exp(y Probabiliton Transmissi EmTP
→ 0.5-0.7nm minimum EOT constrains on-current electrostatics degrades with scaling → fins, nanowires
High-er materials have lower barriers
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
norm
aliz
ed d
rive c
urr
en
t K
1
m*/mo
g=2
EET=1.0 nm
0.6 nm
0.4 nm
g=1
EET=Tox
eSiO2
/eox
+Tchannel
eSiO2
/2echannel
Thin dielectrics are leaky
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27
Quick check: scaling limits
finFET: 5 nm physical gate length. Channel: <100> Si, 0.5, 1, or 2nm thick dielectric: er=12.7, 0.5 or 0.7 nm EOT
60
65
70
75
80
0 0.5 1 1.5 2 2.5
Dielectric: 0.5 nm EOT
su
bth
resh
old
sw
ing
, m
V/d
eca
de
body thickness, nm
thermionic+
tunneling
thermionic
only
5nm gate length
<100> Si finFET
0 0.5 1 1.5 2 2.5
Dielectric: 0.7nm EOT
body thickness, nm
thermionic+
tunneling
thermionic
only
NEMO ballistic simulations
Given EOT limits, ~1.5-2nm body is acceptable.
Source-drain tunneling often dominates leakage.
simulation
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28
Do 2-D semiconductors help ?
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
norm
aliz
ed d
rive c
urr
en
t K
1
m*/mo
g=2isotropic
EET=1.0 nm
0.6 nm
0.4 nm
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
no
rma
lized
drive
cu
rre
nt,
K1
normalized effective mass m*/mo
EET=1.0 nm
0.6 nm0.4 nm g=6
isotropic
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
no
rma
lized
drive
cu
rre
nt,
K1
normalized longitudinal transport mass mL/m
o
EET=1.0 nm
0.6 nm0.4 nm
EET=Tox
eSiO2
/eox
+Tchannel
eSiO2
/2echannel
g=1transverse mass
=2.6*mo
Silic
on
M
oS 2
P
ho
sph
ore
ne
2/32/1
||
2/1
,
2/12/1
2/3
)/()/(1
)/( where
, V 1m
mA84
oequivodos
o
thgs
mmmgcc
mmgK
VVKJ
m
3D: Is body thickness a scaling limit ? recall the previous slide
If oxides won't scale, we must make fins with 2D, can we make fins ? later, will need to make nanowires...
Ballistic drive currents don't win either high m*, and/or high DOS mobility sufficient for ballistic ?
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29
When it gets crowded, build vertically
2-D integration: wire length # gates1/2
Los Angeles: sprawl Manhattan: dense
3-D integration: wire length #gates1/3
LA is interconnect-limited
1) Chip stacking (skip) 2) 3D transistor integration
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Corrugated surface→ more surface per die area
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Corrugated surface→ more current per unit area
Cohen-Elias et al., UCSB 2013 DRC
J .J. Gu et al., 2012 DRC, Purdue 2012 IEDM
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3D→shorter wires→less capacitance→less CV2
All three have same drive current, same gate width
Tall fin, "4-D": smaller footprint→ shorter wires
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Corrugation: same current, less voltage, less CV2
0 0.1 0.2 0.3 0.4 0.5
10-1
100
101
102
103
Vgs
60mV/decade
I d,
Am
ps p
er
me
ter
of
FE
T f
oo
tprin
t w
idth
0 0.1 0.2 0.3 0.4 0.5
10-1
100
101
102
103
104
Vgs
I d,
Am
ps p
er
me
ter
of
FE
T f
ootp
rin
t w
idth
0 0.1 0.2 0.3 0.4 0.5
10-1
100
101
102
103
104
Vgs
10:1
corrugation
I d,
Am
ps p
er
me
ter
of
FE
T f
ootp
rin
t w
idth
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Industry is moving to taller fins.
http://techreport.com/review/26896/intel-broadwell-processor-revealed
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Fixing source-drain tunneling by increasing mass ?
Source-drain tunneling leakage:
)(*2 where),2exp( 1
thgoff qVmLI
2/1*constant gg LmL
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
norm
aliz
ed d
rive c
urr
en
t K
1
m*/mo
g=2
EET=1.0 nm
0.6 nm
0.4 nm
g=1
EET=Tox
eSiO2
/eox
+Tchannel
eSiO2
/2echannel
Fix by increasing effective mass ?
This will decrease the on-current:
?
!
long gate→ big
shorter gate→ smaller
less current
wider→ more current
big again !
(also increases transit time)
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Fixing source-drain tunneling by corrugation
Transport distance > gate footprint length Only small capacitance increase
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RF/Wireless
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mm-Waves: high-capacity mobile communications
Needs→ research: RF front end: phased array ICs, high-power transmitters, low-noise receivers IF/baseband: ICs for multi-beam beamforming, for ISI/multipath suppression, ...
wide, useful bandwidths from 60 to ~300 GHz
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mm-Wave CMOS won't scale much further
Gate dielectric can't be thinned → on-current, gm can't increase
Tungsten via resistances reduce the gain Inac et al, CSICS 2011
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
no
rma
lized
drive
cu
rre
nt
K1
m*/mo
EET=1.0 nm
0.6 nm
0.4 nm
g=1
EET=Tox
eSiO2
/eox
+Tchannel
eSiO2
/2echannel
0.3 nm
Shorter gates give no less capacitance dominated by ends; ~1fF/mm total
Maximum gm, minimum C→ upper limit on ft. about 350-400 GHz.
Present finFETs have yet larger end capacitances
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III-V high-power transmitters, low-noise receivers
Cell phones & WiFi: GaAs PAs, LNAs
mm-wave links need high transmit power, low receiver noise
0.47 W @86GHz
0.18 W @220GHz
1.9mW @585GHz M Seo, TSC, IMS 2013
T Reed, UCSB, CSICS 2013
H Park, UCSB, IMS 2014
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Making faster bipolar transistors
to double the bandwidth: change
emitter & collector junction widths decrease 4:1
current density (mA/mm2) increase 4:1
current density (mA/mm) constant
collector depletion thickness decrease 2:1
base thickness decrease 1.4:1
emitter & base contact resistivities decrease 4:1
Narrow junctions.
Thin layers
High current density
Ultra low resistivity contacts
Teledyne: M. Urteaga et al: 2011 DRC
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THz HBTs: The key challenges
Obtaining good base contacts in full HBT process flow (vs. in TLM structure)
1018
1019
1020
1021
P-InGaAs
10-10
10-9
10-8
10-7
10-6
10-5
Hole Concentration, cm-3
B=0.8 eV
0.6 eV0.4 eV0.2 eV
step-barrierLandauer
Co
nta
ct
Re
sis
tivit
y,
cm
2
3THz target
Baraskar et al, Journal of Applied Physics, 2013
RC parasitics along finger length metal resistance, excess junction areas
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THz InP HBTs blanket Pt/Ru base contacts: resist-free, cleaner surface → lower resistivity
J. Rode, in review
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THz HEMTs: one more scaling generation ?
Xiaobing Mei, et al, IEEE EDL, April 2015 doi: 10.1109/LED.2015.2407193
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
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nm & THz electronics
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46
Electron devices: What's next ?
http://en.wikipedia.org/wiki/Standard_Model
Problems: oxide, S/D tunneling
~ l/n
deep UV absorption
lithography interconnect energy
& static dissipation
..electrostatic control of charge
...and communicating by E&M waves
Why transistors are best:
our best tools are:
Opportunities:
low voltages high currents nm via 3D RF→ THz
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(backup slides follow)