transistor 23 12
TRANSCRIPT
7/23/2019 transistor 23 12
http://slidepdf.com/reader/full/transistor-23-12 1/1
2002-06-17Page 1
SPP80N06S2L-H5SPB80N06S2L-H5
OptiMOS Power-Transistor
Product Summary
V DS 55 V
R DS(on) 5 mΩ
I D 80 A
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv /dt rated
P- TO263 -3-2 P- TO220 -3-1
Marking
2N06LH5
2N06LH5
Type Package Ordering Code
SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054
SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055
Maximum Ratings, at T = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current1)
T C=25°C
T C=100°C
I D
80
80
A
Pulsed drain current
T C=25°C
I D puls 320
Avalanche energy, single pulse
I D=80 A ,
V DD=25V,
R GS=25
Ω
E AS 700 mJ
Repetitive avalanche energy, limited by T jmax2) E AR 30
Reverse diode dv /dt
I S=80A, V DS=44V, di /dt =200A/µs, T jmax=175°C
dv /dt 6 kV/µs
Gate source voltage V GS ±20 V
Power dissipation
T C=25°C
P tot 300 W
Operating and storage temperature T , T stg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56