to-220f plastic-encapsulate transistors
TRANSCRIPT
TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)
TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP)
FEATURESMedium Power Complementary Silicon Transistors
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter TIP120F
TIP125F
TIP121F
TIP126F
TIP122F
TIP127F
Unit
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 2 W
RθJA Thermal Resistance, Junction to Ambient 62.5 ℃/W
RθJC Thermal Resistance, Junction to Case 1.92 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage TIP120F,TIP125F
TIP121F,TIP126F TIP122F,TIP127F
V(BR)CBO IC= 1mA,IE=0 60 80
100 V
Collector-emitter breakdown voltage TIP120F,TIP125FTIP121F,TIP126F TIP122F,TIP127F
VCEO(SUS) IC= 30mA,IB=0 60 80
100 V
Collector cut-off current TIP120F,TIP125F TIP121F,TIP126F TIP122F,TIP127F
ICBO VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0
0.2 mA
Collector cut-off current TIP120F,TIP125F TIP121F,TIP126FTIP122F,TIP127F
ICEO VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0
0.5 mA
Emitter cut-off current IEBO VEB=5 V, IC=0 2 mA
hFE(1) VCE= 3V, IC=0.5A 1000DC current gain
hFE(2) VCE= 3V, IC=3 A 1000
Collector-emitter saturation voltage VCE(sat) IC=3A,IB=12mA IC=5 A,IB=20mA
2 4
V
Base-emitter voltage VBE VCE=3V, IC=3 A 2.5 V Output Capacitance TIP125F,TIP126F,TIP127F
TIP120F,TIP121F,TIP122F Cob VCB=10V, IE=0,f=0.1MHz300 200
pF
12000
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
1 Rev. - 1.1www.jscj-elec.com
TO-220F 1.BASE
2.COLLECTOR
3.EMITTER1 2 3
R1 typ. =5 KΩ typ. =210 Ω
R 1
R 2
R 1
R 2
B
C
E
B
C
R2
ER1 typ. =5 KΩ R2 typ. =210 Ω
NPN PNP
-0.1 -1 -100
50
100
150
200
250
-1 -10 -100 -100010
0 25 50 75 100 125 1500.0
0.5
1.0
1.5
2.0
2.5
3.0
-1 -10 -100 -1000-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
-1 -10 -100 -1000-0
-200
-400
-600
-800
-1000
-1200
-0 -1 -2 -3 -4 -5 -6 -7 -8-0
-1
-2
-3
-4
-5
-6
-0.0 -0.5 -1.0 -1.5 -2.0-0.1
-1
-10
-100
-1000
f=1MHzIE=0 / IC=0
Ta=25 oC
REVERSE VOLTAGE V (V)
CAP
ACIT
ANC
E
C
(pF)
VCB / VEBCob / Cib ——
Cib
Cob
-20
10000
1000
-5000
VCE= -3V
Ta=100 oC
Ta=25 oC
COLLECTOR CURRENT IC (mA)
DC
CU
RR
ENT
GAI
N
hFE
IChFE ——
100
CO
LLEC
TOR
PO
WER
DIS
SIPA
TIO
N
P
c (W
)
AMBIENT TEMPERATURE Ta ( )℃
Pc —— Ta
-5000
COLLECTOR CURRENT IC (mA)
BASE
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V BE
sat
(V)
Ta=25℃
Ta=100℃
β=250
ICVBEsat ——
-5000
-5000
Ta=100℃
Ta=25℃
β=250
VCEsat —— IC
CO
LLEC
TOR
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V C
Esat
(mV)
COLLECTOR CURRENT IC (mA)
COMMONEMITTERTa=25℃-1.0mA
-0.9mA-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
IB=-0.2mA
COLLECTOR-EMITTER VOLTAGE VCE (V)
CO
LLEC
TOR
CU
RR
ENT
I C
(A
)
Static Characteristic
VCE=-3V
Ta=25℃
Ta=100 oC
BASE-EMITTER VOLTAGE VBE(V)
CO
LLEC
TOR
CU
RR
ENT
I
C (m
A)
IC —— VBE
Typical Characteristics
2www.jscj-elec.com Rev. - 1.1
Typical Characterisitics TIP122
TO-220F Package Outline Dimensions
Min. Max. Min. Max.A 4.300 4.700 0.169 0.185
A1A2 2.800 3.200 0.110 0.126A3 2.500 2.900 0.098 0.114b 0.500 0.750 0.020 0.030
b1 1.100 1.350 0.043 0.053b2 1.500 1.750 0.059 0.069c 0.500 0.750 0.020 0.030D 9.960 10.360 0.392 0.408E 14.800 15.200 0.583 0.598eFФh 0.000 0.300 0.000 0.012h1h2L 28.000 28.400 1.102 1.118
L1 1.700 1.900 0.067 0.075L2 0.900 1.100 0.035 0.043
2.700 REF.3.500 REF. 0.138 REF.
0.106 REF.
0.800 REF.0.500 REF.
0.031 REF.0.020 REF.
Symbol Dimensions In Millimeters Dimensions In Inches
2.540 TYP. 0.100 TYP.
1.300 REF. 0.051 REF.
3www.jscj-elec.com Rev. - 1.1