sot-89 -3l plastic-encapsulate...
TRANSCRIPT
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
D882 TRANSISTOR (NPN)
FEATURES Power dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150 ℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA
hFE(1) VCE=2V, IC= 1A 60 400 DC current gain
hFE(2) VCE=2V, IC= 100mA 32
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V
Transition frequency fT VCE= 5V , Ic=0.1A
f =10MHz 50 MHz
CLASSIFICATION OF hFE(1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER
RӨJA
Thermal Resistance from Junction
to Ambient
250 ℃/W
℃ Tstg Storage Temperature -55~150
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0 300 600 900 12001
10
100
1000
1 10 100 1000100
1000
0 25 50 75 100 125 1500
100
200
300
400
500
600
1 10 100 10001
10
100
1000
1 10 100 100010
100
1000
0.1 1 1010
100
0 1 2 3 4 5 6 7 80.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
COMMON EMITTERVCE= 2V
VBEIC ——
BASE-EMMITER VOLTAGE VBE (mV)
CO
LLE
CTO
R C
UR
RE
NT
I C
(m
A)
T a=2
5℃
T a=1
00℃
3000
β=10
ICVBEsat ——
BASE
-EM
ITTE
R S
ATU
RAT
ION
VOLT
AGE
V B
Esa
t (m
V)
COLLECTOR CURREMT IC (mA)
Ta=100 ℃
Ta=25℃
3000
PC —— Ta
AMBIENT TEMPERATURE Ta ( )℃
CO
LLEC
TOR
PO
WER
DIS
SIPA
TIO
NP C
(m
W)
Ta=100 ℃
Ta=25℃
β=10
ICVCEsat ——
CO
LLE
CTO
R-E
MIT
TER
SA
TUR
ATI
ON
VOLT
AGE
V C
Esa
t (m
V)
COLLECTOR CURREMT IC (mA)
3000
2000
IChFE ——
Ta=100℃
Ta=25℃
DC
CU
RR
EN
T G
AIN
h
FE
COLLECTOR CURRENT IC (mA)
COMMON EMITTERVCE= 2V
3000
f=1MHzIE=0/IC=0Ta=25 ℃
VCB/VEBCob/Cib ——
Cob
Cib
REVERSE VOLTAGE V (V)
CAP
ACIT
ANC
E
C
(pF)
20
500
Static Characteristic
COMMON EMITTERTa=25 ℃10mA 9mA
8mA7mA
6mA
5mA
4mA
3mA
2mA
IB=1mA
CO
LLE
CTO
R C
UR
RE
NT
I C
(A
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
Typical Characteristics
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Min Max Min MaxA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181D1E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167e
e1L 0.900 1.200 0.035 0.047
SymbolDimensions In Millimeters Dimensions In Inches
1.550 REF. 0.061 REF.
1.500 TYP. 0.060 TYP.3.000 TYP. 0.118 TYP.
SOT-89-3L Package Outline Dimensions
SOT-89-3L Suggested Pad Layout
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SOT-89-3L Tape and Reel
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