2006-11-15

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TG3c Presentation

Project: IEEE P802.15 Working Group for Wireless Personal Area NProject: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)etworks (WPANs)

Submission Title: [Millimeter-wave CMOS RFIC]Date Submitted: [15 November, 2006]Source: [Tian-Wei Huang] Company [Department of Electrical Engineering, National Taiwan University]Address [No.1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, R.O.C. ]Voice:[+886 2 2363 5251x342], FAX: [+886 2 3366 5084], E-Mail:[twhuang@cc.ee.ntu.edu.tw]Re: []

Abstract: [Description of the current status of CMOS RFIC development]Purpose: [Contribution to TG3c at November 2006 meeting.]Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein.Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.

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Millimeter-wave CMOS RFIC

Tian-Wei Huang

National Taiwan University

November 15, 2006

2006-11-15

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AgendaAgenda• Gbps CMOS Modulator/Transmitter

• CMOS Low-Noise Amplifier

• CMOS Active Mixer and VCO

• SiGe 60-GHz Transmitter with Integrated Antenna

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A 60-GHz 2.5-Gbps CMOS BPSK Modulator

•Modified reflection-type •0.13 μm CMOS technology•Chip size : 0.5 × 0.35 mm2

•Frequency: 15-75 GHz•Phase Imbalance < 3°•Amplitude Imbalance < 0.5 dB•Modulation bandwidth > 1 GHz

Hong-Yeh Chang, Pei-Si Wu, Tian-Wei Huang, Huei Wang, Yung-Chih Tsai, and Chun-Hung Chen “An ultra compact and broadband

15-75 GHz BPSK modulator using 0.13-μm CMOS process,” 2005 IEEE MTT-S IMS Digest, Long Beach, CA, June 2005.

LORF

IF+

IF-

2.5-Gbps at 60 GHz

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CMOS MMW IQ Modulator

BPSK (I)

BPSK (Q)

Bro

adsi

de c

oupl

er

R2

IN

oZ2

oZ2

OUTR3

IP

IN

QP

QN

Hong-Yeh Chang, and et al, “Design and analysis of CMOS broad-band compact high-linearity modulators for gigabit microwave/millimeter-wave applications,” IEEE Transactions on Microwave Theory and Techniques, Jan. 2006.

LO

RF

IP IN

QP QN

• TSMC 0.13-μm CMOS Process• Chip Size: 0.65 × 0.58 mm2

• Modified Reflection-type Modulator • Frequency: 20-40 GHz• Sideband Suppression > 20 dB• LO Suppression > 30 dB• Spurs Suppression > 30 dB• P1dB > -5 dBm• Conversion Loss < 13 dB• Modulation bandwidth > 1 GHz

29.95 29.97 29.99 30.01 30.03 30.05-90

-80

-70

-60

-50

-40

-30

Pow

er (d

Bm

)

Frequency (GHz)

Center: 30 GHzSPAN: 100 MHz

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Measured output spectrum of the IQ modulator

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Conversion loss and LO suppression

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A 0.13-μm mmW CMOS Transmitter

Hong-Yeh Chang, Tian-Wei Huang and Huei Wang, “A 45-GHz quadrature voltage controlled oscillator with a reflection-type IQ modulator in 0.13-μm CMOS technology,” 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, June 2006.

• Technology: 0.13 μm CMOS technology• Chip size: 0.85 x 0.6 mm2

• Frequency: 44.8-45.8 GHz, • Phase Imbalance < 1.8°, • Amplitude Imbalance < 0.7 dB• DC power consumption: 40mW

QVCO

IQ Modulator

IQ Modulator

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V-band 3-Stage Cascode LNA (0.13μm CMOS)• Gain > 20 dB from 51 to 57.5 GHz• NF < 8 dB from 50 to 57 GHz• Input P1dB : -22 dBm• IIP3 : -12 dBm at 56 GHz

Chieh-Min Lo, Chin-Shen Lin, and Huei Wang, “A Miniature V-band Three-Stage Cascode Low Noise Amplifier in 130nm CMOS Technology,” ISSCC 2006, San Francisco, Feb. 2006.

40 45 50 55 60 65 70-30-25-20-15-10-505

1015202530

S p

aram

eter

s (d

B)

Frequency (GHz)

S11 S21 S22

36/0.13

72/0.13 RFOUT

RFIN

VDD

Vg1

VDDVDD

Vg1 Vg1

Vg2 Vg2 Vg2

36/0.13

72/0.13

36/0.13

72/0.13

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Q-band 3-Stage LNA (0.13μm CMOS)

0.75 mm x 0.7 mm

20 25 30 35 40 45 50-30

-25

-20

-15

-10

-5

0

5

10

15

20

25

S21

S11

S22

Simulated Measured

Gai

n &

Ret

urn

Loss

es (d

B)

Frequency (GHz)

• Gain > 17 dB from 34 to 44 GHz• NF < 7 dB from 40 to 42 GHz• OP1dB : +4 dBm (Psat: +7dBm)• OIP3 : +14.5 dBm• Power dissipation: 24 mA at +1.5 V

Jeng-Han Tsai, Wei-Chien Chen, To-Po Wang, Tian-Wei Huang, and Huei Wang, " A Miniature Q-band Low Noise Amplifier Using 0.13-mm CMOS Technology," IEEE Microwave and Guided Wave Letters. Vol. 16, No. 6, pp. 327-329, June 2006.

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Q-band 3-Stage LNA (Noise Figure)

34 36 38 40 42 44 462

3

4

5

6

7

8

9

10

11

12

Noi

se F

igur

e (d

B)

Frequency (GHz)

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Q-band 3-Stage LNA (AM-AM & IP3)

-30 -25 -20 -15 -10 -5 0-10

-5

0

5

10

15

20

Pout

(dBm

) & G

ain

(dB)

Pin (dBm)

Pin-Pout Pin-Gain

-45 -40 -35 -30 -25 -20 -15 -10 -5 0 5-70

-60

-50

-40

-30

-20

-10

0

10

20

30

OIP3=14.5 dBm

Pout

(dBm

)

Pin (dBm)

Fund 3rd

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Q-band CMOS LNA (Comparison)Ref. This work [5] [3] [4] [2]

Process 0.13µmCMOS

0.13µmCMOS

0.18µmCMOS

90nmCMOS

90nmSOI

CircuitTopology

3-stagecommonsource

3-stagecascode

3-stagecascode

2-stagecommonsource

1-stagecascode

3-dB BW(GHz)

10(34-44)

10(34-44)

5(37-42)

14(32-46)

16(26-42)

Peak Gain(dB)

20@43GHz

19@40GHz

7@40GHz

7.3@35GHz

11.9@35GHz

Chip Area(mm2)

0.525 1.43 2.04 N/A 0.18

Powerdissipation

24mA@1.5V

24mA@1.5V

100mA@3V

7mA@1.5V

17mA@2.4V

NF(dB)

6.3@41GHz N/A N/A N/A 3.6

@35GHzOP1dB(dBm) 4 -0.9 5 -5.75 4

OIP3 (dBm) 14.5 11.6 N/A 7 N/A

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0.3-25 GHz CMOS Gilbert-Cell Mixer

0.8 mm x 1.0 mmMing-Da Tsai and Huei Wang, “A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-µm CMOS technology," IEEE Microwave and Wireless Component Letters, vol. 14, no. 11, pp. 522-524, Nov. 2004.

• 0.18-μm CMOS•Gilbert-cell mixer withLC ladder matching

network•Conversion Gain: +11 dBfrom 0.3-25 GHz•Isolation between LO and RF: > 20 dB•LO power: -1 dBm•IF: 10 MHz

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63 GHz CMOS VCO• 0.25-μm bulk CMOS • Push-push design using cross-

couple pair• 63 GHz output extracted through

50 ohm CPW and blocking capacitor

• Vdd fed through λ/4 line• Chip size: 0.45 x 0.7 mm2

• -85 dBc/Hz @ 1 MHz offset• Output frequency from 62 to 64.5

GHz• Better than 25 dB rejection• -4 dBm max. output power

Ren-Chieh Liu, Hong-Yeh Chang, Chi-Hsueh Wang, and Huei Wang, “A 63-GHz VCO using a standard 0.25-μm CMOS process,” 2004 International Solid-State Circuit Conference (ISSCC), pp. 446-447, San Francisco, Feb., 2004.

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114-GHz CMOS VCO•Implemented in TSMC 0.13-μm CMOS•Push-Push topology•First CMOS VCO above 100 GHz

fofo

2fo

0.42 x 0.48 mm2

Ping-Chen Huang, Ming-Da Tsai, Huei Wang, Chun-Hung Chen, and Chih-Sheng Chang, “A 114GHz VCO in 0.13μm CMOS technology,” 2005 International Solid-State Circuit Conference (ISSCC), pp. 404-405, San Francisco, Feb. 2005.

Lg1Lg2

M1M2

Cs1Cs2

Ls1Ls2

Cvar1Cvar2

λ/4 short stubfor 114GHz

Ld1Ld2

VDD

VGRg

Vo+ (57GHz)Vo

- (57GHz)

Vpp (114GHz)

Vctrl

BufferBuffer

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131-GHz VCO Using 90-nm CMOS

• 90-nm bulk CMOS technology

• Cross-coupled topology

• Coplanar waveguide (CPW)

& asymmetric coplanar slot (ACPS)

• 0.55 x 0.65 mm2

• 1.2 V / 27.6 mW (core)

• Output power: -11.4 dBm

• Phase noise: -108.4 dBc/Hz

@ 10 MHz offset (estimated)

• Tuning range: 2.2 GHz

Ping-Chen Huang, Ren-Chieh Liu, Hong-Yeh Chang, Chin-Shen Lin, Ming-Fong Lei, Huei Wang, Chia-Yi Su, and Chia-Long Chang, “A

131-GHz push-push VCO in 90-nm CMOS technology,” 2005 IEEE RFIC Symposium Digest, pp. 613-616, Long Beach, CA, June 2005.

M1M2

Vctrl

λ/4 @ 130GHz

VDD

2fo (130GHz)

fo- (65GHz) fo+(65GHz)

M3M4

Cvar2 Cvar1

L2 L1

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60-GHz Transmitter with Integrated Antenna

Chi-Hsueh Wang, Yi-Hsien Cho, Chin-Shen Lin, Huei Wang, Chun-Hsiung Chen, Dow-Chih Niu, John Yeh, Chwan-Ying Lee, and John Chern,“A 60-GHz transmitter with integrated antenna in 0.18-mm SiGe BiCMOS technology,” 2006 International Solid-State Circuit Conference (ISSCC), San Francisco, CA, Feb. 2006.

• Technology: 0.18-μm SiGe BiCMOS process• Chip size: 1.3 x 0.8 mm2

• Conversion gain: 20.2 dB• Output power: 15.8 dBm• DC power consumption: 281 mW

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Antenna DesignWith antenna director Without antenna director

E field mostly confined at surfaceAntenna gain increased: -10 dBi → 0 dBi (simulated)Results in narrow bandwidth

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60GHz Transmitter Module

Antenna director fabricated using Duroid 5880Director placed at ~ half wavelength (at 60 GHz) away from taper-slot antenna

Antenna director

2.35mm

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Measurement Setup

Transmitted IF signal generated using Agilent E4438CReceiver consists of

– Standard horn antenna with 24dB gain– Agilent 8565EC spectrum analyzer– Agilent 11974V pre-selection harmonic mixer

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Radiation Pattern

Antenna gain improved by off-chip director Taper-slot antenna gain ~ -2 dBi with director

~ -15 dBi without directorSSB isotropic conversion gain ~ 20.2 dB

-20

-15

-10

-5

00

30

60

90

120

150

180

210

240

270

300

330

-20

-15

-10

-5

0

with directorwithout director

E-plan (co-polar) H-plan (co-polar)

-30

-20

-10

00

30

60

90

120

150

180

210

240

270

300

330

-30

-20

-10

0

with directorwithout director

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SummaryThe mmW CMOS modulator/LNA/mixer/VCO are presented.A mmW CMOS broadband/compact (low-cost) direct-conversion digital transmitter is demonstrated. The 60-GHz CMOS transceiver is under development.A 60-GHz SiGe HBT transmitter with integrated antenna is measured with gain enhancement techniques.

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Thank you!