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Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 1 Chapter 14 CMOS Processes Hong Xiao, Ph. D. [email protected] www2.austin.cc.tx.us/HongXiao/Book.htm

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Page 1: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 1

Chapter 14CMOS Processes

Hong Xiao, Ph. D.

[email protected]

www2.austin.cc.tx.us/HongXiao/Book.htm

Page 2: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 2

Objectives

• List the major process technology changesfrom the 1980 to the 1990s

• Explain the differences between coppermetallization and traditional metallization

Page 3: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 3

From 1960s to 1970s

• 1960s– PMOS

– Diffusion

– Metal gate

• 1970s– NMOS

– Ion implantation

– Polysilicon gate

Page 4: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 4

1980’s Technology

• LCD replacing LED as indicators forelectronic watches and calculators

• CMOS IC replacing NMOS IC for lowerpower consumption

• Minimum feature size: from 3 µm to 0.8 µm

• Wafer size: 100 mm (4 in) to 150 mm (6 in)

Page 5: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 5

1980’s CMOS Technology

• LOCOS

• PSG and reflow

• Evaporator for metal deposition

• Positive photoresist

• Projection printer

• Plasma etch and wet etch

Page 6: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 6

P-type substrate

1980’s Technology, Wafer Clean

Page 7: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 7

Pad oxide

P-type substrate

Pad Oxidation

Page 8: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 8

Pad oxide

P-type substrate

Silicon nitride

LPCVD Nitride

Page 9: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 9

Pad oxide

P-type substrate

PhotoresistSilicon nitride

Photoresist Coating

Page 10: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 10

Mask 1, LOCOS

Page 11: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 11

P-type substrate

PhotoresistSilicon nitride

Mask 1, LOCOS

Page 12: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 12

P-type substrate

PhotoresistSilicon nitride

Alignment and Exposure

Page 13: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 13

Silicon nitride

P-type substrate

Photoresist

Development

Page 14: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 14

Silicon nitride

P-type substrate

Photoresist

Etch Nitride

Page 15: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 15

Silicon nitride

P-type substrate

Strip Photoresist

Page 16: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 16

Silicon nitride

P-type substrate

p+p+

Isolation Implantation

Page 17: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 17

P-type substrate

Silicon nitride

p+p+

SiO2

LOCOS Oxidation

Page 18: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 18

P-type substrate

p+p+

SiO2

Strip Nitride and Pad Oxide, Clean

Page 19: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 19

P-type substrate

p+p+ p+

SiO2

Screen Oxidation

Page 20: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 20

Photoresist

P-type substrate

p+p+ p+

SiO2

Photoresist Coating

Page 21: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 21

Mask 2, N-well

Page 22: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 22

Photoresist

P-type substrate

p+p+ p+

SiO2

Mask 2, N-well

Page 23: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 23

Photoresist

P-type substrate

p+p+ p+

SiO2

Exposure

Page 24: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 24

Photoresist

P-type substrate

p+p+ p+

SiO2

Development

Page 25: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 25

Phosphorus Ions

Photoresist

P-type substrate

p+p+ p+

SiO2 N-well

N-well Implantation

Page 26: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 26

P-type substrate

p+p+ p+

SiO2 N-well

Strip Photoresist

Page 27: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 27

P-type substrate

p+p+

N-well

SiO2

N-well Drive-in

Page 28: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 28

P-type substrate

p+p+

N-well

SiO2

Strip Screen Oxide

Page 29: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 29

P-type substrate

p+p+

N-well

SiO2

Grow Sacrificial Oxide

Page 30: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 30

P-type substrate

p+p+

N-well

SiO2

Strip Sacrificial Oxide

Page 31: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 31

P-type substrate

p+p+

N-well

SiO2

Grow Gate Oxide

Page 32: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 32

Polysilicon

P-type substrate

p+p+

N-well

SiO2

Gate Oxide

Deposit Polysilicon

Page 33: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 33

Polysilicon

P-type substrate

p+p+

N-well

SiO2

Photoresist Coating

Page 34: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 34

Mask 3, Gate and LocalInterconnection

Page 35: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 35

P-type substrate

p+p+

N-well

SiO2

Polysilicon

Mask 3, Gate and LocalInterconnection

Page 36: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 36

Polysilicon

P-type substrate

p+p+

N-well

SiO2

Exposure

Page 37: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 37

Polysilicon

P-type substrate

p+p+

N-well

SiO2

Development

Page 38: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 38

P-type substrate

p+p+

N-well

SiO2

PRPolysilicon Gate

Etch Polysilicon

Page 39: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 39

Polysilicon

P-type substrate

p+p+

N-well

SiO2

Strip Photoresist

Page 40: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 40

Polysilicon

Photoresist

P-type substrate

p+p+

N-well

SiO2

Photoresist Coating

Page 41: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 41

Photoresist

P-type substrate

p+p+

N-well

SiO2

Mask 4, n-Source/Drain

Page 42: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 42

Photoresist

P-type substrate

p+p+

N-well

SiO2

Exposure

Page 43: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 43

Photoresist

P-type substrate

p+p+

N-well

SiO2

Development

Page 44: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 44

Photoresist

P-type substrate

p+p+

N-well

SiO2

P+ implantation

N-Source/Drain Ion Implantation

Page 45: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 45

Photoresist

P-type substrate

p+p+

N-well

SiO2

Strip Photoresist

Page 46: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 46

P-type substrate

p+p+

N-well

SiO2

Photoresist Coating

Page 47: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 47

P-type substrate

p+p+

N-well

SiO2

Mask 5, P-Source/Drain Exposure

Page 48: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 48

P-type substrate

p+p+

N-well

SiO2

Development

Page 49: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 49

B+ implantation

P-type substrate

p+p+

N-well

SiO2

P-Source/Drain Implantation

Page 50: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 50

P-type substrate

p+p+

N-well

SiO2

Strip Photoresist

Page 51: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 51

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

Anneal

Page 52: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 52

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

LPCVD Barrier Nitride

Page 53: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 53

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

CVD BPSG

Page 54: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 54

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

BPSG Reflow

Page 55: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 55

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

Photoresist Coating

Page 56: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 56

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

Mask 6, Contact Exposure

Page 57: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 57

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

Development

Page 58: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 58

BPSG

P-type substrate

p+p+

N-wellP-type substrate

SiO2n+ n+ p+ p+

Contact Etch

Page 59: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 59

BPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Strip Photoresist

Page 60: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 60

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Metal Deposition

Page 61: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 61

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Photoresist Coating

Page 62: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 62

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Mask 7, Metal InterconnectionExposure

Page 63: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 63

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Development

Page 64: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 64

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Etch Metal

Page 65: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 65

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

Strip Photoresist

Page 66: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 66

USG

Al·Cu·SiBPSG

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

CVD USG

Page 67: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 67

USG

Al·Cu·SiBPSG

Nitride

P-type substrate

p+p+

N-wellP-type substrate

n+ n+ p+ p+SiO2

CVD Nitride

Page 68: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 68

1990’s Technology

• Driving force: digital logic electronics– PC, telecommunication, and internet.

• Feature size: from 0.8 µm to 0.18 µm

• Wafer size: from 150 mm to 300 mm

Page 69: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 69

1990’s CMOS Technology

• Epitaxy silicon

• Shallow trench isolation

• The sidewall spacer for LDD and salicide

• Polycide gates and local interconnectionsreduce resistance and improve device speed– Tungsten silicide and titanium silicide.

Page 70: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 70

1990’s CMOS Technology

• Photolithography– G-line, I-line (365 nm), and DUV 248 nm

– Positive photoresist

– Steppers replaced projection printer

– Track-stepper integrated systems

• Plasma etches for patterned etch

• Wet etches for blanket film stripping

Page 71: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 71

1990’s CMOS Technology

• Vertical furnaces– smaller footprints, better contamination control.

• RTP systems– post-implantation annealing

– silicide formation,

– faster, better process and thermal budget control.

• DC magnetron sputtering replaced evaporation

Page 72: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 72

1990’s CMOS Technology

• Multi-layer metal interconnection

• W CVD and CMP (or etch back) to form plugs

• Ti and TiN barrier/adhesion layer for W

• Ti welding layer for Al-Cu to reduce contactresistance

• TiN ARC

Administrator
矩形
Page 73: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 73

1990’s CMOS Technology

• BPSG was popularly used as PMD.

• DCVD: PE-TEOS and O3-TEOS– STI, sidewall spacer, PMD, and IMD

• DCVD: PE-silane– PMD barrier nitride, dielectric ARC, and PD nitride

• Tungsten CMP to form plug

• Dielectric CMP for planarization

Page 74: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 74

1990’s CMOS Technology

• Cluster tools became very popular

• Single wafer processing systems improvewafer-to-wafer uniformity control

• Batch systems is still commonly employedin many non-critical processes for their highthroughput.

Page 75: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 75

Epitaxy Deposition

P-Epi

P-Wafer

Page 76: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 76

Mask 1: N-well

Page 77: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 77

N-well Implantation

P-EpiP-Wafer

Photoresist

N-Well

Phosphorus Ions

Page 78: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 78

Mask 2: P-well

Page 79: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 79

P-well Implantation

P-EpiP-Wafer

Boron Ions

P-WellN-Well

Photoresist

Page 80: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 80

Strip PR, Strip Nitride/Pad Oxide

P-EpiP-Wafer

N-WellP-Well

Page 81: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 81

Pad Oxidation, LPCVD Nitride

P-EpiP-Wafer

N-WellP-Well

Nitride

Page 82: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 82

Mask 3: Shallow Trench Isolation

Page 83: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 83

Etch Nitride, Pad Oxide and Silicon

P-EpiP-Wafer

N-WellP-Well

Nitride Nitride

Page 84: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 84

HDP-CVD USG Trench Fill

P-EpiP-Wafer

N-WellP-Well

Nitride Nitride

USG

USG

Page 85: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 85

CMP USG, Stop on Nitride

P-EpiP-Wafer

N-WellP-Well

Nitride Nitride

USG

Page 86: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 86

Strip Nitride and Pad Oxide, Clean

P-EpiP-Wafer

N-WellP-Well

USGSTI

Page 87: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 87

Mask 4: N-channel VT Adjust

Page 88: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 88

Photoresist

Phosphorus Ions

P-EpiP-Wafer

N-WellP-Well

USGSTI

Page 89: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 89

Mask 5: P-channel VT Adjust

Page 90: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 90

Photoresist

Boron Ions

P-EpiP-Wafer

N-WellP-WellSTI USG

Page 91: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 91

Gate Oxidation, LPCVD Polysilicon

Polysilicon

P-EpiP-Wafer

N-WellP-WellSTI USG

Page 92: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 92

Mask 6: Gate & Local Interconnection

Page 93: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 93

Etch Polysilicon

Polysilicon gate

P-EpiP-Wafer

N-WellP-WellSTI USG

PhotoresistGate Oxide

Page 94: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 94

Mask 7: N-channel LDD

Page 95: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 95

N-channel LDD Implantation, Arsenic

Photoresist

Arsenic Ions

P-EpiP-Wafer

N-WellP-Well

USGSTI

Page 96: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 96

Mask 8: P-channel LDD

Page 97: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 97

P-channel LDD Implantation, BF2+

Photoresist

BF2+ Ions

P-EpiP-Wafer

N-WellP-WellSTI USG

Page 98: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 98

Sidewall Spacer

Gate oxiden- LDD n- LDD

SidewallSpacer

SidewallSpacer Polysilicon gatePolysilicon gate

Gate oxiden- LDD n- LDD

Page 99: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 99

Mask 9: N-channel Source/Drain

Page 100: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 100

N-channel Source/Drain Implantation

Photoresist

Phosphorus Ions

P-EpiP-Wafer

N-WellP-Well

n+n+STI p- p-USG

Page 101: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 101

Mask 9: P-channel Source/Drain

Page 102: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 102

P-channel Source/Drain Implantation

Photoresist

Boron Ions

P-EpiP-Wafer

N-WellP-Well

n+n+STI p+ p+USG

Page 103: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 103

Titanium Salicide Process

Polysilicon gateSidewallspacer

Sidewallspacer

Gate oxiden- n-

n+n+

Ar + Ar+

Ti

Polysilicon gate

Gate oxiden- n-

n+n+

TiSi2 TiSi2

Ti

Polysilicon gate

Gate oxiden- n-

n+n+

TiSi2 TiSi2Polysilicon gate

Gate oxiden- n-

n+n+

Page 104: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 104

Titanium Self-aligned silicide Process

Titanium Deposition

RTP Silicide Alloying

Strip Unreact Titanium

Silicon

Silicon

Silicon

STI

Sidewall Spacer

Titanium

Titanium SilicidePolysilicon

Gate Oxide

Page 105: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 105

BPSG Deposition and Reflow

n+n+ p+ p+STI USG

BPSG

n+n+ p+ p+STI USG

BPSG

Page 106: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 106

Mask 10: Contact Hole

Page 107: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 107

Contact Hole Etch, BPSG Etch

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

Page 108: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 108

Contact Hole Etch, BPSG Etch

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

Tungsten

Titanium/Titanium Nitride

Page 109: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 109

Contact Hole Etch, BPSG Etch

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

Titanium/Titanium Nitride

Aluminum Copper Alloy

TitaniumTiN ARC

W

Page 110: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 110

Mask 11: Metal 1 Interconnect

Page 111: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 111

Metal Etch

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

Titanium/Titanium Nitride TitaniumTiN ARC

W

Al-Cu Alloy

Page 112: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 112

PE-TEOS USG Dep/Etch/Dep/CMP

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al-Cu Alloy

USG Dep/Etch/Dep/CMPIMD 1

Page 113: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 113

Mask 12: Via 1

Page 114: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 114

Via Etch, Etch USG

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al-Cu Alloy

USGIMD 1

Page 115: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 115

Via Etch, Etch USG

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al-Cu Alloy

USG

Metal 2 Al-Cu Alloy

M1

IMD 1

Page 116: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 116

Mask 13: Metal 2 Interconnect

Page 117: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 117

Etch Metal 2

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

IMD 1

Page 118: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 118

USG Dep/Etch/Dep/CMP

P-EpiP-Wafer

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

IMD 1

IMD 2

Page 119: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 119

Mask 14: Via 2

Page 120: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 120

Via 2 Etch, Etch USG

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

IMD 1

IMD 2

Page 121: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 121

Metallization of Metal 3

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

Metal 3 Al•Cu Alloy

W

IMD 1

IMD 2

Page 122: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 122

Mask 15: Metal 3 Interconnects

Page 123: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 123

Metal Etch, PR Strip and Metal Anneal

N-WellP-Well

BPSG

p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

Metal 3 Al•Cu Alloy

W

IMD 1

IMD 2

n+n+

Page 124: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 124

PE-TEOS USG Dep/Etch/Dep/CMP

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

Metal 3 Al•Cu Alloy

W

USG

IMD 1

IMD 2

IMD 3

Page 125: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 125

Mask 16: Via 3

Page 126: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 126

Via 3 Etch and PR Strip

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

Metal 3 Al•Cu Alloy

W

IMD 1

IMD 2

IMD 3 USG

Page 127: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 127

Metal 4 Deposition

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG

Metal 3 Al•Cu Alloy

W

IMD 1

IMD 2

IMD 3 USGMetal 4

Al•Cu

Page 128: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 128

Mask 17: Metal 4 Interconnects

Page 129: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 129

Etch Metal 4

Metal 3 Al•Cu Alloy

IMD 3 USGMetal 4

Al•CuAl•Cu Alloy

Page 130: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 130

Passivation Dielectric Deposition

Metal 3 Al•Cu Alloy

IMD 3 USGMetal 4

Al•Cu

USG

Al•Cu Alloy

Silicon Nitride

Page 131: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 131

Mask 18: Bonding Pad

Page 132: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 132

Etch Bonding Pad, Strip PR

Metal 3 Al•Cu Alloy

IMD 3 USGMetal 4

Al•Cu

USG

Silicon Nitride

Al•Cu Alloy

Page 133: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 133P-Epi

P-Wafer

Metal 3 Al•Cu Alloy

IMD 3 USGMetal 4

Al•Cu USG

Silicon Nitride

Al•Cu Alloy

N-WellP-Well

BPSG

n+n+ p+ p+STI USG

W

Al•Cu Alloy

USG

M1

M2 Al•Cu

USG W

IMD 1

IMD 2

TiSi2

Poly-Si

Ti

TiN ARC

W

Ti/TiN

Ti/TiN

SidewallSpacer, USG

PMD BarrierNitride

IMD 3

Passivation 1

Passivation 2

PMD

Page 134: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 134

State-of-art Technology

• The 2000’s Technology

• Feature size 0.13 µm or smaller

• Wafer size 200 mm or 300 mm

Page 135: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 135

State-of-art Technology

• Silicon on isolator (SOI) with STI– Completely isolate the transistor on the silicon

surface from the bulk silicon substrate

– Eliminate radiation-induced soft error.

• Increase the packing density of IC chip.

• High radiation resistance

• SOI chips will become the mainstream forthe high-performance electronics

Page 136: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 136

State-of-art Technology

• Copper and low-κ to reduce RC delay,

• Lower power consumption, higher IC speed

• Dual damascene process– Two dielectric etches, no metal etch

– Uses metal CMP instead of metal etch

• Main challenges: dielectric etch, metaldeposition, and metal polish

Page 137: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 137

State-of-art Technology

• Copper metallization: Cu seed, Ta/TaNbarrier, Cu ECP, anneal, and metal CMP

• Low-κ dielectric: still in development– CVD and spin-on dielectric (SOD).

– CVD: familiar technologies, existing processequipment and experience

– SOD: extendibility to very low dielectricconstant (κ<2) with porous silica

Page 138: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 138

State-of-ArtSOI CMOS ICwith Copperand Low-κ

Interconnection

P-well

P-waferBuried SiO 2

USGN-well

STI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1Cu 1 Cu 1Cu 1 Cu 1Cu 1 Cu 1Cu 1

SOD

SODCopper 2

SOD

SOD

Cu 3 Cu 3

SOD

Copper 4

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

SOD

Page 139: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 139

Bare wafer

P-wafer

Page 140: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 140

High Current Oxygen IonImplantation

P-wafer

Oxygen ions, O+

Page 141: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 141

Oxide Anneal

P-waferBuried SiO2

Page 142: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 142

Wafer Clean

P-waferBuried SiO2

Page 143: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 143

Epitaxial Silicon Deposition

P-waferBuried SiO2

P-epi

Page 144: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 144

Wafer Clean

P-waferBuried SiO2

P-epi

Page 145: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 145

Oxidation, Screen Oxide

P-waferBuried SiO2

P-epi

Page 146: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 146

Photoresist Coating and Baking

P-waferBuried SiO2

P-epi

Photoresist

Page 147: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 147

Mask 0, Alignment Mark

P-waferBuried SiO2

P-epi

Photoresist

Page 148: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 148

Exposure

P-waferBuried SiO2

P-epi

Photoresist

Page 149: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 149

PEB, Development, and Inspection

P-waferBuried SiO2

P-epi

Photoresist

Page 150: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 150

Etch Oxide, Etch silicon

P-waferBuried SiO2

P-epi

Photoresist

Page 151: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 151

Strip Photoresist

P-waferBuried SiO2

P-epi

Page 152: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 152

Strip Screen Oxide

P-waferBuried SiO2

P-epi

Page 153: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 153

Wafer Clean

P-waferBuried SiO2

P-epi

Page 154: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 154

Oxidation, Pad Oxide

P-waferBuried SiO2

P-epi

Page 155: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 155

LPCVD Silicon Nitride

P-waferBuried SiO2

P-epi

Nitride

Page 156: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 156

Photoresist Coating and Baking

P-waferBuried SiO2

P-epi

PhotoresistNitride

Page 157: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 157

Mask 1: Shallow Trench Isolation

Page 158: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 158

Alignment and Exposure

P-waferBuried SiO2

P-epi

PhotoresistNitride

Page 159: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 159

PEB, Development, and Inspection

P-waferBuried SiO2

P-epi

PhotoresistNitride

Page 160: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 160

Etch Nitride and Pad Oxide

P-waferBuried SiO2

P-epi

PhotoresistNitride

Page 161: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 161

Strip Photoresist

P-waferBuried SiO2

P-epi

Nitride

Page 162: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 162

Etch Silicon

P-waferBuried SiO2

P-epi

Nitride

P-epi

Page 163: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 163

Wafer Clean

P-waferBuried SiO2

P-epi

Nitride

P-epi

Page 164: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 164

P-epi P-epi

Oxidation, Barrier Oxide

P-waferBuried SiO2

Nitride

Page 165: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 165

P-epi P-epi

HDP CVD USG

P-waferBuried SiO2

Nitride

USGUSG

Page 166: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 166

P-epi P-epi

CMP USG

P-waferBuried SiO2

Nitride

USGUSG

Page 167: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 167

P-epi P-epi

Strip Nitride

P-waferBuried SiO2

USGUSG

Page 168: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 168

P-epi P-epi

Strip Pad Oxide

P-waferBuried SiO2

USGUSGSTI

Page 169: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 169

P-epi P-epi

Wafer Clean

P-waferBuried SiO2

USGUSGSTI

Page 170: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 170

P-epi P-epi

Oxidation, Sacrificial Oxide

P-waferBuried SiO2

USGUSGSTI

Page 171: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 171

P-epi P-epi

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI

Photoresist

Page 172: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 172

Mask 2: N-well

Page 173: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 173

P-epi P-epi

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI

Photoresist

Page 174: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 174

P-epi P-epi

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI

Photoresist

Page 175: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 175

P-epi

N-well Implantations

P-waferBuried SiO2

USGUSGSTI

Photoresist

N-well

Phosphorus ions, P+

Page 176: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 176

P-epi

PMOS VT Adjust Implantation

P-waferBuried SiO2

USGUSGSTI

Photoresist

N-well

Boron ions, B+

Page 177: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 177

P-epi

Strip Photoresist

P-waferBuried SiO2

USGUSGSTI N-well

Page 178: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 178

P-epi

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 179: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 179

Mask 3: P-well

Page 180: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 180

P-epi

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 181: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 181

P-epi

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 182: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 182

P-well

P-well Implantations

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Boron ions, B+

Page 183: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 183

P-well

NMOS VT Adjust Implantation

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Phosphorus ions, P+

Page 184: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 184

P-well

Strip Photoresist

P-waferBuried SiO2

USGUSGSTI N-well

Page 185: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 185

P-well

Strip Sacrificial Oxide

P-waferBuried SiO2

USGUSGSTI N-well

Page 186: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 186

P-well

Wafer Clean

P-waferBuried SiO2

USGUSGSTI N-well

Page 187: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 187

P-well

Gate Oxidation

P-waferBuried SiO2

USGUSGSTI N-well

Page 188: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 188

P-well

LPCVD Amorphous Silicon

P-waferBuried SiO2

USGSTI N-well

α-Si

Gate oxide

USG

Page 189: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 189

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI N-well

α-SiPhotoresist

Page 190: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 190

Mask 4, Gate and LocalInterconnection

Page 191: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 191

P-well

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI N-well

α-SiPhotoresist

Page 192: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 192

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI N-well

α-SiPhotoresist

Page 193: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 193

P-well

Etch Amorphous Silicon

P-waferBuried SiO2

USGUSGSTI N-well

α-Si

PhotoresistGate oxide

Page 194: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 194

P-well

Strip Photoresist

P-waferBuried SiO2

USGUSGSTI N-well

α-Si

Page 195: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 195

P-well

Wafer Clean

P-waferBuried SiO2

USGUSGSTI N-well

α-Si

Page 196: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 196

P-well

Polysilicon Annealing and Oxidation

P-waferBuried SiO2

USGUSGSTI N-well

Poly Si

Page 197: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 197

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI N-well

PhotoresistPoly

Page 198: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 198

Mask 5, NMOS LDD Implantation

Page 199: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 199

P-well

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI N-well

PolyPhotoresist

Page 200: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 200

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 201: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 201

P-well

NMOS LDD Implantation

P-waferBuried SiO2

USGUSGSTI N-well

PhotoresistAntimony ions, Sb+

Page 202: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 202

P-well

Strip Photoresist

P-waferBuried SiO2

USGUSGSTI N-well

Page 203: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 203

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI N-well

PolyPhotoresist

Page 204: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 204

Mask 6: PMOS LDD Implantation

Page 205: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 205

P-well

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI N-well

PolyPhotoresist

Page 206: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 206

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI N-well

PolyPhotoresist

Page 207: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 207

P-well

PMOS LDD Implantation

P-waferBuried SiO2

USGUSGSTI N-well

PolyPhotoresist

Boron ions, BF2+

Page 208: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 208

P-well

Strip Photoresist

P-waferBuried SiO2

USGUSGSTI N-well

Page 209: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 209

P-well

CVD USG, CVD Nitride

P-waferBuried SiO2

USGUSGSTI N-well

Page 210: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 210

P-well

Nitride and USG Etchback

P-waferBuried SiO2

USGUSGSTI N-well

Sidewall spacersPolysilicon gate

Page 211: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 211

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 212: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 212

Mask 7, NMOS S/D Implantation

Page 213: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 213

P-well

Alignment and Exposure

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 214: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 214

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGUSGSTI N-well

Photoresist

Page 215: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 215

P-well

NMOS S/D Implantation

P-waferBuried SiO2

USGN-well

Photoresist

STI USG

Arsenic ions, As+

Page 216: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 216

P-well

Strip Photoresist

P-waferBuried SiO2

USGN-wellSTI USGn+ n+

Page 217: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 217

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGN-wellSTI USGn+ n+

Photoresist

Page 218: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 218

Mask 8, PMOS S/D Implantation

Page 219: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 219

P-well

Alignment and Exposure

P-waferBuried SiO2

USGN-wellSTI USGn+ n+

Photoresist

Page 220: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 220

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGN-wellSTI USGn+ n+

Photoresist

Page 221: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 221

P-well

PMOS S/D Implantation

P-waferBuried SiO2

USGN-wellSTI USGn+ n+

Photoresist

Boron ions, B+

Page 222: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 222

P-well

Strip Photoresist

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

Page 223: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 223

P-well

Rapid Thermal Annealing

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

Page 224: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 224

P-well

Argon Sputtering Etch

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

Page 225: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 225

P-well

Co and TiN Sputtering Deposition

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

CoTiN

Page 226: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 226

P-well

Rapid Thermal Annealing

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

CoSi2

CoTiN

Page 227: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 227

P-well

Strip Titanium Nitride and Cobalt

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

CoSi2

Page 228: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 228

P-well

PECVD Nitride

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

CoSi2

Page 229: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 229

P-well

HDP CVD PSG

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Page 230: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 230

P-well

CMP PSG

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Page 231: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 231

P-well

Photoresist Coating and Baking

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Photoresist

Page 232: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 232

Mask 9, Contact and LocalInterconnection

Page 233: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 233

P-well

Alignment and Exposure

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Photoresist

Page 234: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 234

P-well

PEB, Development, and Inspection

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

PR

Page 235: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 235

P-well

Etch PSG

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

PR

Page 236: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 236

P-well

Strip Photoresist

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Page 237: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 237

P-well

Argon Sputtering Etch

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Page 238: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 238

P-well

Ti and TiN Sputtering Deposition

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Ti/TiN glue and barrier layers

Page 239: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 239

P-well

Tungsten CVD

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSG

Ti/TiN glue and barrier layers

TungstenW

Page 240: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 240

P-well

W, TiN, and Ti CMP

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 241: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 241

PECVD Silicon Carbide Seal Layer

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 242: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 242

Spin-on Dielectric (SOD) Coating

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 243: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 243

SOD Cure

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 244: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 244

PECVD SiC Etch Stop Layer

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 245: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 245

SOD Coating and Curing

SOD

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 246: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 246

PE-TEOS Cap

SOD

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 247: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 247

Photoresist Coating and Baking

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 248: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 248

Mask 10, Via 1

Page 249: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 249

Alignment and Exposure

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 250: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 250

PEB, Development, and Inspection

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 251: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 251

Etch PE-TEOS&SOD, Stop on SiC

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 252: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 252

Strip Photoresist

SOD

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 253: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 253

Photoresist Coating and Baking

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 254: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 254

Mask 11, Metal Trench 1

Page 255: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 255

Alignment and Exposure

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 256: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 256

PEB, Development, and Inspection

SOD

SOD

Photoresist

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Page 257: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 257

Etch Trench

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SOD

Photoresist

Page 258: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 258

Strip Photoresist

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

Page 259: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 259

Argon Sputtering Clean

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

Page 260: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 260

Ta and TaN Barrier Layer PVD

SOD

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

Page 261: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 261

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

Cu Seed Layer PVD

SOD

SOD

Page 262: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 262

Bulk Copper Electrochemical Plating

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Page 263: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 263

Copper Anneal

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Page 264: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 264

Cu, Ta, and TaN CMP

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

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Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 265

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

PECVD SiC Seal Layer

Page 266: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 266

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Spin-on Dielectric (SOD) Coating

SOD

Page 267: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 267

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD Curing

SOD

Page 268: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 268

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

PECVD SiC Etch Stop Layer

SOD

Page 269: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 269

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD Coating and Curing

SOD

SOD

Page 270: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 270

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

PE-TEOS Cap

SOD

SOD

Page 271: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 271

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Photoresist Coating and Baking

SOD

SOD

Page 272: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 272

Mask 12, Metal Trench 2

Page 273: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 273

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Alignment and Exposure

SOD

SOD

Page 274: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 274

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

PEB, Development, and Inspection

SOD

SOD

Page 275: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 275

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Etch Trench, Stop on SiC Layer

SOD

SODSiCPhotoresist

Page 276: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 276

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Strip Photoresist

SOD

SODSiC

Page 277: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 277

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Photoresist Coating and Baking

SOD

SODPhotoresist

Page 278: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 278

Mask 13, Via 2

Page 279: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 279

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Alignment and Exposure

SOD

SODPhotoresist

Page 280: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 280

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

PEB, Development, and Inspection

SOD

SODPhotoresist

Page 281: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 281

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Via2 Etch

SOD

SODPhotoresist

Page 282: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 282

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Strip Photoresist

SOD

SOD

Page 283: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 283

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Hydrogen Plasma Clean

SOD

SOD

Page 284: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 284

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

Ta and TaN Barrier Layer PVD

SOD

Page 285: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 285

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Cu Seed Layer PVD

SOD

SOD

Page 286: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 286

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Bulk Cu ECP

SOD

SODCopper 2

Page 287: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 287

Copper Anneal

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

Page 288: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 288

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

Cu, Ta, and TaN CMP

SOD

SODCopper 2

Page 289: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 289

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

PECVD SiC, SOD Coating and Curing

SOD

Page 290: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 290

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

PECVD SiC Etch Stop Layer

SOD

Page 291: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 291

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

Photoresist Coating and Baking

SOD

Photoresist

Page 292: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 292

Mask 14, Via 3

Page 293: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 293

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

Alignment and Exposure

SOD

Photoresist

Page 294: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 294

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

PEB, Development, and Inspection

SOD

Photoresist

Page 295: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 295

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

Etch SiC

SOD

Photoresist

Page 296: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 296

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

Strip Photoresist

SOD

Page 297: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 297

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD Coating & Curing, PE-TEOS Cap

SOD

Page 298: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 298

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

Photoresist Coating and Baking

SOD

Page 299: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 299

Mask 15, Metal Trench 3

Page 300: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 300

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

Alignment and Exposure

Page 301: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 301

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

PEB, Development, and Inspection

Page 302: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 302

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

Dielectric Etch

Page 303: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 303

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

Strip Photoresist

Page 304: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 304

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

Hydrogen Plasma Clean

Page 305: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 305

P-well

P-waferBuried SiO2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1 Cu 1 Cu 1 Cu 1

SOD

SODCopper 2

SOD

SOD

Cu, Ta, and TaN Deposition and CMPCu 3 Cu 3

Page 306: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 306

SOD

SOD

SiC, SOD, SiC, SOD, and PE-TEOS

Cu 3 Cu 3

SOD

SOD

Page 307: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 307

SOD

SOD

PR Coating, Alignment andExposure, PEB, and Development

Cu 3 Cu 3

SOD

SOD

Page 308: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 308

SOD

SOD

Via 4 Etch

Cu 3 Cu 3

SOD

SOD

Page 309: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 309

SOD

SOD

Strip Photoresist

Cu 3 Cu 3

SOD

SOD

Page 310: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 310

SOD

SOD

PR Coating, Alignment andExposure, PEB, and Development

Cu 3 Cu 3

SOD

SOD

Page 311: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 311

SOD

SOD

Etch Trench

Cu 3 Cu 3

SOD

SOD

Page 312: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 312

SOD

SOD

Strip Photoresist

Cu 3 Cu 3

SOD

SOD

Page 313: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 313

SOD

SOD

Hydrogen Plasma Clean

Cu 3 Cu 3

SOD

SOD

Page 314: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 314

SOD

SOD

Cu, Ta, and TaN Deposition and CMP

Cu 3 Cu 3

SOD

SOD Copper 4

Page 315: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 315

SOD

SOD

SiC, SOD, SiC, SOD, and PE-TEOS

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 316: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 316

SOD

SOD

PR Coating, A&E, PEB, and Develop

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 317: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 317

SOD

SOD

Etch Via5

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 318: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 318

SOD

SOD

Strip Photoresist

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 319: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 319

SOD

SOD

PR Coating, A&E, PEB, and Develop

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 320: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 320

SOD

SOD

Dielectric Etch

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 321: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 321

SOD

SOD

Strip Photoresist

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 322: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 322

SOD

SOD

Hydrogen Plasma Clean

Cu 3 Cu 3

SOD

SOD

SOD

SOD Copper 4

Page 323: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 323

SOD

SOD

Cu, Ta, and TaN Deposition and CMP

Cu 3 Cu 3

SOD

SODCopper 5

SOD

SOD Copper 4

Page 324: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 324

PECVD Passivation Layers:Nitride, PSG, and Nitride

SOD

SODCopper 5

PSG

Nitride

Page 325: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 325

PR Coating, A&E, PEB, and Develop

SOD

SODCopper 5

PSG

Nitride

Page 326: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 326

Etch Passivation Layers

SOD

SODCopper 5

PSG

Nitride

Page 327: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 327

Strip Photoresist

SOD

SODCopper 5

PSG

Nitride

Page 328: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 328

Polyamide Coating

SOD

SODCopper 5

PSG

Nitride

Polyamide

Page 329: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 329

Ship to Test and Package

SOD

SODCopper 5

PSG

Nitride

Polyamide

Page 330: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 330

Strip Polyamide

SOD

SODCopper 5

PSG

Nitride

Page 331: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 331

Argon Sputtering Etch

SOD

SODCopper 5

PSG

Nitride

Page 332: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 332

Cr, Cu, and Au Liner Coating

SOD

SODCopper 5

PSG

Nitride

Page 333: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 333

Lead-Tin Alloy Coating

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

Page 334: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 334

PR Coating, A&E, PEB, and Develop

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

Photoresist

Page 335: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 335

Metal Etch

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

Photoresist

Page 336: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 336

Strip Photoresist

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

Page 337: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 337

Lead-Tin Alloy Reflow

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

Page 338: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 338P-well

P-waferBuried SiO 2

USGN-wellSTI USGn+ n+ p+ p+

PSGW Tungsten

SOD

SODCu 1Cu 1 Cu 1Cu 1 Cu 1Cu 1 Cu 1Cu 1

SOD

SODCopper 2

SOD

SOD

Cu 3 Cu 3

SOD

Copper 4

SOD

SODCopper 5

PSG

NitrideLead-tin alloy

SOD

SiC seal layer

SiN barrierlayer

PE-TEOS cap

SiC seal layer

SiN seallayer

Ta/TaNbarrier layer

SiC etchstop layers

Poly Si gate

CoSi2

Cr, Cu, andAu liners

Page 339: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 339

Summary

• CMOS IC chips dominate semiconductorindustry– Demands for digital electronics, such as

electronic watches, calculators, and personalcomputers

Page 340: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 340

Summary

• In the 1980s– 3 micron to sub-micron

– Multi-layer metallization

– Tungsten CVD, dielectric CVD and metal sputtering

– Sidewall spacer for LDD

– Plasma etch gradually replaced wet etch in allpatterning etch processes.

– Steppers became popular for alignment and exposurewhile projection systems were widely used

Page 341: The major cmos process technology changes from the 1980s to the 1990s

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm 341

Summary

• In the 1990s,– 0.8 micron to 0.18 micron– Silicides used for the gate and local interconnection– CMP widely used for tungsten polishing and dielectric

planarization– RTP is widely used for anneal processes– HDP sources are used for etch, CVD, sputtering clean,

and sputtering deposition– O3-TEOS oxide CVD processes commonly used for

STI, PMD and IMD depositions.– ECP is used for copper metallization process


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