the leading global partner in rf power for aerospace and ... · rf power for aerospace and defense...

The leading global partner in

RF power for Aerospace and

Defense applications

Angelo Andres

International Product Marketing Manager

BU multi-market

Date: 26th May, 2016

Revision: 2 Confidential

Amplify the future | 2

Agenda

Ampleon organization01

Introduction02

Gen9 LDMOS Transistor for S band Radar03

Gen9 LDMOS Pallets for S band Radar04

Complete GaN Portfolio 05

CONFIDENTIAL Solutions for Aerospace and Defense


Our Name and Logo

• Combination of the English word “amplify” (meaning “enhance”, “broaden”,

“strengthen”) and the Greek word “eon” (meaning “life”, “duration”, “eternity”).

• The name reflects the products that we stand for and our commitment to

“amplify the future” of RF Power.

• The wave-like icon in our logo represents a radio wave and thus

enhance our claim.



Global Footprint16 sites on 3 continents

• Headquarters: Nijmegen (Netherlands)

• R&D: Nijmegen (NL), Shanghai (China), Toulouse (France)

• Manufacturing: Cabuyao (Philippines)



We serve a wide range of applications

Radio TV

Broadcastin

gRadar

Industrial

Lasers

Cellular

Basestations

Cooking Lighting

Air Traffic

Control

Medical

Applications

Empowering

next generation

mobile

communication

Amplifying the

future of TV &

broadcasting

Making this

world a more

predictable

place

Enabling

secure traffic

on a crowded

planet

Bringing

energy to light

Creating

precision

industrial

lasering

Improving

medical

diagnostics and

therapyRevolutionizing

cooking



Agenda


Introduction02






Ampleon Aerospace and Defense

• Global aerospace and defense companies require a strategic partner with a

complete product portfolio, expert application knowledge and a reliable

industrial base.

• Ampleon is a established , market leading European RF Power solution

provider that develops ITAR-Free products and is fully committed to support its

customers with a dedicated longevity program.

• Cutting edge GaN and LDMOS technologies for high performance and cost

optimized high volume production



• LDMOS is the best RF Power technology for low cost (€/$ per W)

• technically optimized for power, efficiency, ruggedness & linearity

• High voltage (50V) LDMOS for Avionics and UHF/L-band radar

• superior performance to bipolar technology

• utilizing technology advances from broadcasting / ISM

• extremely suitable for pulsed operation

• State-Of-The-Art 9th Generation LDMOS technology

• brings next step in performance for L-band and S-Band radar

• market leading high power density, gain and efficiency

• GaN the best technology for high frequency & broadband applications

• Ampleon Gen1 GaN up to 6GHz and Gen2 up to 10GHz

• GaN broadband amplifiers for 700MHz to 2700MHz (not possible with LDMOS)

• GaN has better efficiency than LDMOS at high frequencies

Technology positioning of LDMOS & GaN



Solid State Amplifiers for ATC Radar

• Air Traffic Control (ATC) Radar systems have historically

used tube-based amplifiers to produce high power pulsed

RF transmitters

• Klystrons, magnetrons, travelling wave tubes

• Solid state RF amplifiers have significant advantages for

long term reliability and reduced maintenance costs

• GaN and LDMOS technologies allow Ampleon to produce

RF transistors with higher output powers and lower €/Watt

costs to upgrade old radars

• Active electronically scanned array (AESA) radars using

multiple lower power transmit/receive modules to steer

radar beams (no mechanical moving parts)



Agenda


Introduction02






Ampleon LDMOS Technology Evolution

GEN2(2000)

GEN4(2004)

GEN5(2005)

GEN6(2006)

GEN7(2010)

GEN6HV

GEN6XR

GEN6XR2

GEN8(2012)

GEN9 (2014)

GEN9HV50V

GEN9LV, 12V

GEN10(2016)

Optimized for high voltage, high

ruggedness.



Product Attributes

120W

BLS6G3135L(S)-120• High Efficiency 120W in

SOT502 SE

• Integrated ESD protection

• Vgs range ,-0.5V to 11V• Vbreakdown , 60V• VSWR , 10:1

350W


SOT539 gemini• Vbreakdown , 65V

• Integrated ESD protection

• Vgs range ,-0.5V to 11V

• VSWR , 10:1

400W

BLS8G2731L(S)-400P• High Efficiency 400W in

SOT539 gemini

• Vbreakdown , 65V• Dual –sided ESD

• Vgs range ,-6V to 11V• VSWR , 10:1

Gen6 LDMOS

Gen7 LDMOSGen8 LDMOS


ITAR FREE

400W


small package

• Vbreakdown , > 65V• Dual –sided ESD

• Vgs range ,-6V to 11V• VSWR , 10:1

Pallets

MMICs

Latest LDMOS

Generation


Gen9 LDMOS Enabling SWaP-CR solutions

• Best in Class LDMOS

• Nine LDMOS generations, and

ongoing R&D to improve:

– Power density

– Ruggedness

– RF Performance

• Product Consistency

• Nine LDMOS generations – Mature

Technology

• Highly consistent assembly facility

Size, Weight and Power plus Cost and Reliability

10 x 20mm

35 x 55mm



Product Features• Latest 32V Gen.9 LDMOS technology

• 450W peak power (typ)

• 45% drain efficiency (typ)

• 2900MHz to 3400MHz broadband operation

• Excellent thermal stability

• High flexibility for long pulse formats

• 20mm x 10mm package body size

• Integrated dual-sided ESD protection enables

excellent off-state isolation

• Integrated input and output matching for easy

broadband matching

BLS9G2934LS-400

RF Performance Summary BLS9G2934LS-400

Frequency

(MHz)

Gain(dB) Efficiency (%) P3dB (dBm) PPEAK (W)

@ Pout = 400W (56dBm)

2900 12.5 40 56.3 425

3000 14.5 48 56.3 430

3100 13.5 45 56.5 450

3200 12.5 42 56.6 455

3300 12 40 56.8 475

3400 11 43 56.5 450

Test Conditions: VDS=32V, IDQ=400mA, TP=300µsec, Duty Cycle = 10%

S-Band 400 Watts with Gen9 LDMOS

* In development; release Q3-16



LDMOS GEN9 S band Line-ups

2.9 to 3.4Ghz

400W

24dB gain

BLS9G3135LS-400

3.1 to 3.5 GHz

400W

23dB gain


2.7 to 3.1Ghz

400W

26dB gain

BLS9G2735LS-50

BLS9G2934LS-400BLS9G2735LS-50

BLS9G2731LS-400BLS9G2735LS-50


Agenda


Introduction02






S band Pallets Enabling SWaP-CR solutions

• Pallets are RF PA Sub Assembly

with input/output 50 Ohm

matched.

• Gen9 LDMOS and GaN high

power density enable small form

factor PA modules.

• Ease of Use, Modular RF power

blocks to enable high power

solutions

• Pallets are 100% RF tested

ensuring a high product

consistency in the end design

Size, Weight and Power plus Cost and Reliability

55mm

35mm

• The BLS9G2934P-400 is based on Gen9

LDMOS technology, has 400W power,

10dB gain, 40% Efficiency and operating

bandwidth from 2.9 to 3.4 GHz.

• It is sampling now, with full production

due in Q4, 2016.



Pallet Portfolio


BLL6H1214P2S-250

BLS9G2934P-400

BLS9G2731P-400

BLS9G3135P-400

Frequency

Pow

er

HP

S band

SolutionsHP

Avionics

Solutions

HP GaN

C band

Solutions

HP

L band

Solutions


Agenda


Introduction02






Ampleon GaN Technology Development


GH1HV

GH3

GH1MV

GH2HV

GH3HV

Access to scale

Better linearity

50V GaN

Applications include

Radars upto S band,

Jammers & broadband comm

C & X band Radar

28V GaN


C & X Radars, SatCom,

& Pt to Pt comm

20V GaN


K band Radars, new markets


Product Attributes

200W

CLF1G0035(S)-200P• Broadband Operation

• Best in Class Linearity

• 50V drain supply

• Thermally Enhanced

Packaging

• Rugged

700W

CLA1G0912(S)-700• Pre-match for easy

broadband matching

• Optimized for Avionics

• High Efficiency, High Gain

• Small Package

Pallet Solutions• High power building blocks

• Sized optimized

• Product consistency

50V GaN

50V GaN


C & X band Portfolio• Drivers and Finals

• High Efficiency

• High Frequency up to

12 GHz

50V, 28V, 20V GaN

ITAR FREE


Complete Gen1 GaN Portfolio in Production

Product Name Package version Psat(W) VDS (V) ηD (%) GP (dB)

Linearity,

(2-tone IMD3,

Δf=1MHz)

Test signal and demo

operating frequency band

CLF1G0060(S)-10 SOT1227A(B) > 10 50 30 to 60 > 14 -40dBc, PEP 5W Pulsed @ 200 to 3200 MHz

CLF1G0060(S)-30 SOT1227A(B) > 30 50 45 to 70 > 11 -40dBc, PEP15W Pulsed @ 500 to 3000 MHz

CLF1G0035(S)-50 SOT467C(B) > 50 50 40 to 65 > 14 -40dBc, PEP 10W CW @ 500 to 2500 MHz

CLF1G0035(S)-100P SOT1228A(B) > 100 50 50 to 55 > 13 -40dBc, PEP 20W Pulsed @ 2500 to 3000 MHz

CLF1G0035(S)-100 SOT467C(B) > 100 50 47 to 80 > 14 -40dBc, PEP 20W Pulsed @ 500 to 2500 MHz

CLF1G0035(S)-200P SOT1228A(B) > 200 50 40 to 55 > 12 -40dBc, PEP 120W Pulsed @ 1700 to 2300 MHz

• Complete GaN Portfolio ,10W to 200W.

• Unmatched, broadband operation

• Operating from 50V supply voltage.

• Thermally enhanced package, in eared and

earless versions.

• 10W and 30W devices useable up to 6GHz

• 50W, 100W and 200W useable up to 3.5GHz

• Ampleon GaN technology best in class linearity .

-40 dBc


SOT1227A(B) SOT1228A(B)SOT467C(B)


• Ampleon benefits from our market leading position in RF power

• adding GaN to our established excellence in LDMOS technology

• giving customers a reliable partner with the scale to deliver in volume

• a combination of innovation and industrial strength that GaN competitors are

unable to match

• Why ITAR-free GaN is so important

• US suppliers are limited by ITAR restrictions which constrain supply of critical

technologies to the global customers limiting their export business.

• Ampleon GaN partnership with UMS, Fraunhofer and WIN

• bringing leading edge GaN technology to market with foundry partners for

ITAR-free devices

Ampleon ITAR-free GaN



GaN S band Line-ups

3.1 to 3.5Ghz

100W

25dB gain


3.1 to 3.5Ghz

200W

22dB gain

CLF1G0035_100CLF1G0060-10

CLF1G0035-200PCLF1G0060-30


Key Take-away

• Gen9 LDMOS Technology & GaN enables SWaP-CR

solutions for various aerospace and defense applications,

including S band radar applications.

• Ampleon launches a complete portfolio of Gen9 LDMOS S

band transistors from 50W up to 400W, now sampling.

• Ampleon introduces 400W S band pallet , now sampling.

• Ampleon complete broadband GaN portfolio in production ,

power levels from 10 to 200W , best in class in linearity .

• Ampleon GaN is ITAR-free .


Amplify the future | 34CONFIDENTIAL Solutions for Aerospace and Defense

the leading global partner in rf power for aerospace and ... · rf power for aerospace and defense...

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