The leading global partner in
RF power for Aerospace and
Defense applications
Angelo Andres
International Product Marketing Manager
BU multi-market
Date: 26th May, 2016
Revision: 2 Confidential
Amplify the future | 2
Agenda
Ampleon organization01
Introduction02
Gen9 LDMOS Transistor for S band Radar03
Gen9 LDMOS Pallets for S band Radar04
Complete GaN Portfolio 05
CONFIDENTIAL Solutions for Aerospace and Defense
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Our Name and Logo
• Combination of the English word “amplify” (meaning “enhance”, “broaden”,
“strengthen”) and the Greek word “eon” (meaning “life”, “duration”, “eternity”).
• The name reflects the products that we stand for and our commitment to
“amplify the future” of RF Power.
• The wave-like icon in our logo represents a radio wave and thus
enhance our claim.
CONFIDENTIAL Solutions for Aerospace and Defense
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Global Footprint16 sites on 3 continents
• Headquarters: Nijmegen (Netherlands)
• R&D: Nijmegen (NL), Shanghai (China), Toulouse (France)
• Manufacturing: Cabuyao (Philippines)
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We serve a wide range of applications
Radio TV
Broadcastin
gRadar
Industrial
Lasers
Cellular
Basestations
Cooking Lighting
Air Traffic
Control
Medical
Applications
Empowering
next generation
mobile
communication
Amplifying the
future of TV &
broadcasting
Making this
world a more
predictable
place
Enabling
secure traffic
on a crowded
planet
Bringing
energy to light
Creating
precision
industrial
lasering
Improving
medical
diagnostics and
therapyRevolutionizing
cooking
CONFIDENTIAL Solutions for Aerospace and Defense
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Agenda
Ampleon organization01
Introduction02
Gen9 LDMOS Transistor for S band Radar03
Gen9 LDMOS Pallets for S band Radar04
Complete GaN Portfolio 05
CONFIDENTIAL Solutions for Aerospace and Defense
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Ampleon Aerospace and Defense
• Global aerospace and defense companies require a strategic partner with a
complete product portfolio, expert application knowledge and a reliable
industrial base.
• Ampleon is a established , market leading European RF Power solution
provider that develops ITAR-Free products and is fully committed to support its
customers with a dedicated longevity program.
• Cutting edge GaN and LDMOS technologies for high performance and cost
optimized high volume production
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• LDMOS is the best RF Power technology for low cost (€/$ per W)
• technically optimized for power, efficiency, ruggedness & linearity
• High voltage (50V) LDMOS for Avionics and UHF/L-band radar
• superior performance to bipolar technology
• utilizing technology advances from broadcasting / ISM
• extremely suitable for pulsed operation
• State-Of-The-Art 9th Generation LDMOS technology
• brings next step in performance for L-band and S-Band radar
• market leading high power density, gain and efficiency
• GaN the best technology for high frequency & broadband applications
• Ampleon Gen1 GaN up to 6GHz and Gen2 up to 10GHz
• GaN broadband amplifiers for 700MHz to 2700MHz (not possible with LDMOS)
• GaN has better efficiency than LDMOS at high frequencies
Technology positioning of LDMOS & GaN
CONFIDENTIAL Solutions for Aerospace and Defense
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Solid State Amplifiers for ATC Radar
• Air Traffic Control (ATC) Radar systems have historically
used tube-based amplifiers to produce high power pulsed
RF transmitters
• Klystrons, magnetrons, travelling wave tubes
• Solid state RF amplifiers have significant advantages for
long term reliability and reduced maintenance costs
• GaN and LDMOS technologies allow Ampleon to produce
RF transistors with higher output powers and lower €/Watt
costs to upgrade old radars
• Active electronically scanned array (AESA) radars using
multiple lower power transmit/receive modules to steer
radar beams (no mechanical moving parts)
CONFIDENTIAL Solutions for Aerospace and Defense
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Agenda
Ampleon organization01
Introduction02
Gen9 LDMOS Transistor for S band Radar03
Gen9 LDMOS Pallets for S band Radar04
Complete GaN Portfolio 05
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Ampleon LDMOS Technology Evolution
GEN2(2000)
GEN4(2004)
GEN5(2005)
GEN6(2006)
GEN7(2010)
GEN6HV
GEN6XR
GEN6XR2
GEN8(2012)
GEN9 (2014)
GEN9HV50V
GEN9LV, 12V
GEN10(2016)
Optimized for high voltage, high
ruggedness.
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Product Attributes
120W
BLS6G3135L(S)-120• High Efficiency 120W in
SOT502 SE
• Integrated ESD protection
• Vgs range ,-0.5V to 11V• Vbreakdown , 60V• VSWR , 10:1
350W
BLS7G3135L(S)-350• High Efficiency 350W in
SOT539 gemini• Vbreakdown , 65V
• Integrated ESD protection
• Vgs range ,-0.5V to 11V
• VSWR , 10:1
400W
BLS8G2731L(S)-400P• High Efficiency 400W in
SOT539 gemini
• Vbreakdown , 65V• Dual –sided ESD
• Vgs range ,-6V to 11V• VSWR , 10:1
Gen6 LDMOS
Gen7 LDMOSGen8 LDMOS
CONFIDENTIAL Solutions for Aerospace and Defense
ITAR FREE
400W
BLS9G2934L(S)-400• High Efficiency 400W in
small package
• Vbreakdown , > 65V• Dual –sided ESD
• Vgs range ,-6V to 11V• VSWR , 10:1
Pallets
MMICs
Latest LDMOS
Generation
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Gen9 LDMOS Enabling SWaP-CR solutions
• Best in Class LDMOS
• Nine LDMOS generations, and
ongoing R&D to improve:
– Power density
– Ruggedness
– RF Performance
• Product Consistency
• Nine LDMOS generations – Mature
Technology
• Highly consistent assembly facility
Size, Weight and Power plus Cost and Reliability
10 x 20mm
35 x 55mm
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Product Features• Latest 32V Gen.9 LDMOS technology
• 450W peak power (typ)
• 45% drain efficiency (typ)
• 2900MHz to 3400MHz broadband operation
• Excellent thermal stability
• High flexibility for long pulse formats
• 20mm x 10mm package body size
• Integrated dual-sided ESD protection enables
excellent off-state isolation
• Integrated input and output matching for easy
broadband matching
BLS9G2934LS-400
RF Performance Summary BLS9G2934LS-400
Frequency
(MHz)
Gain(dB) Efficiency (%) P3dB (dBm) PPEAK (W)
@ Pout = 400W (56dBm)
2900 12.5 40 56.3 425
3000 14.5 48 56.3 430
3100 13.5 45 56.5 450
3200 12.5 42 56.6 455
3300 12 40 56.8 475
3400 11 43 56.5 450
Test Conditions: VDS=32V, IDQ=400mA, TP=300µsec, Duty Cycle = 10%
S-Band 400 Watts with Gen9 LDMOS
* In development; release Q3-16
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LDMOS GEN9 S band Line-ups
2.9 to 3.4Ghz
400W
24dB gain
BLS9G3135LS-400
3.1 to 3.5 GHz
400W
23dB gain
CONFIDENTIAL Solutions for Aerospace and Defense
2.7 to 3.1Ghz
400W
26dB gain
BLS9G2735LS-50
BLS9G2934LS-400BLS9G2735LS-50
BLS9G2731LS-400BLS9G2735LS-50
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Agenda
Ampleon organization01
Introduction02
Gen9 LDMOS Transistor for S band Radar03
Gen9 LDMOS Pallets for S band Radar04
Complete GaN Portfolio 05
CONFIDENTIAL Solutions for Aerospace and Defense
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S band Pallets Enabling SWaP-CR solutions
• Pallets are RF PA Sub Assembly
with input/output 50 Ohm
matched.
• Gen9 LDMOS and GaN high
power density enable small form
factor PA modules.
• Ease of Use, Modular RF power
blocks to enable high power
solutions
• Pallets are 100% RF tested
ensuring a high product
consistency in the end design
Size, Weight and Power plus Cost and Reliability
55mm
35mm
• The BLS9G2934P-400 is based on Gen9
LDMOS technology, has 400W power,
10dB gain, 40% Efficiency and operating
bandwidth from 2.9 to 3.4 GHz.
• It is sampling now, with full production
due in Q4, 2016.
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Pallet Portfolio
CONFIDENTIAL Solutions for Aerospace and Defense
BLL6H1214P2S-250
BLS9G2934P-400
BLS9G2731P-400
BLS9G3135P-400
Frequency
Pow
er
HP
S band
SolutionsHP
Avionics
Solutions
HP GaN
C band
Solutions
HP
L band
Solutions
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Agenda
Ampleon organization01
Introduction02
Gen9 LDMOS Transistor for S band Radar03
Gen9 LDMOS Pallets for S band Radar04
Complete GaN Portfolio 05
CONFIDENTIAL Solutions for Aerospace and Defense
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Ampleon GaN Technology Development
CONFIDENTIAL Solutions for Aerospace and Defense
GH1HV
GH3
GH1MV
GH2HV
GH3HV
Access to scale
Better linearity
50V GaN
Applications include
Radars upto S band,
Jammers & broadband comm
C & X band Radar
28V GaN
Applications include
C & X Radars, SatCom,
& Pt to Pt comm
20V GaN
Applications include
K band Radars, new markets
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Product Attributes
200W
CLF1G0035(S)-200P• Broadband Operation
• Best in Class Linearity
• 50V drain supply
• Thermally Enhanced
Packaging
• Rugged
700W
CLA1G0912(S)-700• Pre-match for easy
broadband matching
• Optimized for Avionics
• High Efficiency, High Gain
• Small Package
Pallet Solutions• High power building blocks
• Sized optimized
• Product consistency
50V GaN
50V GaN
CONFIDENTIAL Solutions for Aerospace and Defense
C & X band Portfolio• Drivers and Finals
• High Efficiency
• High Frequency up to
12 GHz
50V, 28V, 20V GaN
ITAR FREE
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Complete Gen1 GaN Portfolio in Production
Product Name Package version Psat(W) VDS (V) ηD (%) GP (dB)
Linearity,
(2-tone IMD3,
Δf=1MHz)
Test signal and demo
operating frequency band
CLF1G0060(S)-10 SOT1227A(B) > 10 50 30 to 60 > 14 -40dBc, PEP 5W Pulsed @ 200 to 3200 MHz
CLF1G0060(S)-30 SOT1227A(B) > 30 50 45 to 70 > 11 -40dBc, PEP15W Pulsed @ 500 to 3000 MHz
CLF1G0035(S)-50 SOT467C(B) > 50 50 40 to 65 > 14 -40dBc, PEP 10W CW @ 500 to 2500 MHz
CLF1G0035(S)-100P SOT1228A(B) > 100 50 50 to 55 > 13 -40dBc, PEP 20W Pulsed @ 2500 to 3000 MHz
CLF1G0035(S)-100 SOT467C(B) > 100 50 47 to 80 > 14 -40dBc, PEP 20W Pulsed @ 500 to 2500 MHz
CLF1G0035(S)-200P SOT1228A(B) > 200 50 40 to 55 > 12 -40dBc, PEP 120W Pulsed @ 1700 to 2300 MHz
• Complete GaN Portfolio ,10W to 200W.
• Unmatched, broadband operation
• Operating from 50V supply voltage.
• Thermally enhanced package, in eared and
earless versions.
• 10W and 30W devices useable up to 6GHz
• 50W, 100W and 200W useable up to 3.5GHz
• Ampleon GaN technology best in class linearity .
-40 dBc
CONFIDENTIAL Solutions for Aerospace and Defense
SOT1227A(B) SOT1228A(B)SOT467C(B)
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• Ampleon benefits from our market leading position in RF power
• adding GaN to our established excellence in LDMOS technology
• giving customers a reliable partner with the scale to deliver in volume
• a combination of innovation and industrial strength that GaN competitors are
unable to match
• Why ITAR-free GaN is so important
• US suppliers are limited by ITAR restrictions which constrain supply of critical
technologies to the global customers limiting their export business.
• Ampleon GaN partnership with UMS, Fraunhofer and WIN
• bringing leading edge GaN technology to market with foundry partners for
ITAR-free devices
Ampleon ITAR-free GaN
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GaN S band Line-ups
3.1 to 3.5Ghz
100W
25dB gain
CONFIDENTIAL Solutions for Aerospace and Defense
3.1 to 3.5Ghz
200W
22dB gain
CLF1G0035_100CLF1G0060-10
CLF1G0035-200PCLF1G0060-30
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Key Take-away
• Gen9 LDMOS Technology & GaN enables SWaP-CR
solutions for various aerospace and defense applications,
including S band radar applications.
• Ampleon launches a complete portfolio of Gen9 LDMOS S
band transistors from 50W up to 400W, now sampling.
• Ampleon introduces 400W S band pallet , now sampling.
• Ampleon complete broadband GaN portfolio in production ,
power levels from 10 to 200W , best in class in linearity .
• Ampleon GaN is ITAR-free .
CONFIDENTIAL Solutions for Aerospace and Defense