the czochralski method (cz) - max planck · pdf filethe czochralski method (cz) 10 mm si, ge,...
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The Czochralski method (CZ)
10 mm
Si, Ge, Sn, Bi, Au, AlSb, InSb,GaSb, CsJ, KBr, CaF , BaF ,2 2
NaCl, Li N, Al-Pd-Mn etc. 3
Crystals grown:
1. Melting of the starting material
2. Seeding
3. Necking
4. Shouldering
5. Equal diameter growth
Seed
Growing crystal
Melt
Heater
Crucible
Controlledatmosphere
Thermocouple
Vessel(water cooled)
Seed holder(water cooled)
Growth equipment
A view of the AlSb crystal in growth
4
1
5
2
3
ln(1-g)-1.7
-5.0
-4.0
-3.0
-2.0
-1.0
0
-0.7
1. Se, k=0.112. Te, k=0.153. In, k=0.104. Mn, k=0.055. Yb, k=0.007
ln (C / C ) = ln k + (k-1) ln (1-g) S i
ln(C
/C
)S
i
Segregation of Se, Te, In, Mn and Yb in AlSb, as function of the fraction (g)of melt solidified, where k is the effective segregation coefficient, C thecomponent of dopant and C the initial dopant concentration
S
i
AlSb single crystal