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making innovation happen , together The Challenge of High-Tech Fab Gas Purification Cristian Landoni Global Purification BM

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Page 1: The Challenge of High-Tech Fab Gas Purification - … Landoni_SAES_The...making innovation happen , together The Challenge of High-Tech Fab Gas Purification Cristian Landoni Global

m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e r

The Challenge of High-Tech

Fab Gas Purification

Cristian Landoni Global Purification BM

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group2

Outline

�SAES Pure Gas Activities

�Gas Purity and International Technology Roadmap for Semiconductors

�Why Gas Purification Is required?

�Focus on Lithography applications

�Conclusions

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group3

� Part of SAES Group (Italy)

� Founded in 1989

� Gas Purifier Design/

Manufacturing/R&D

� UNI EN ISO 9001-2008

� 100 employees

� 15 sales and service offices

worldwide

SAES Pure Gas Inc.

San Luis Obispo, CA

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group4

SPG Activities

Point of Use Large

Customer Service

SEMICONDUCTOR

COMPOUND

SEMICONDUCTOR

LCD

SOLAR PANELS

FIBER OPTICS

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group5

International Technology Roadmap for Semiconductors

2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group6

International Technology Roadmap for Semiconductors2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group7

International Technology Roadmap for Semiconductors

2011 2012 2013 2014 2015 2016 2017 2018 2019 2020

� Bulk Gases: Relatively stable purity requirements

� Most demanding purity is for Lithography and Metrology(inspection) applications

� EUV and New Immersion Platforms will require tighter specs for H2, CO2

� Customized analytical technologies have been developed to asses purity at sub-pptV levels

� Specialty Gases: Increasing concern for metals removal

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group8

Why Gas Purification is Required?

Bulk Purification

POU Purification

Lines & components

Impurities collection

Tank / Cylinder Reactor

Impurities

Impurities

Impurities

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group9

Moisture Fluctuation in Nitrogen

0

5

10

15

20

25

30

35

40

45

50

30 60 90 120 150 180 210 240 270 300 330 360 390 420 450 480 510 540 570 600 630 660 690 720 750 780

ppbV

:

min

Purified Gas

Room Temperature 20.5 °C

H2O 0.7 ppbV

Purifier By-Pass

Room Temperature 20.5 °C

H2O 6 ppbV

Purifier By-Pass

Room Temperature 20->28 °C

H2O 15 ppbV

Purifier By-Pass

Flow from 6 -> 2 slpm

H2O 27 ppbV

Purifier By-Pass

Pressure from 5 -> 3 Kg/cm2

H2O 48 ppbV

Purified Gas

Room Temperature 28 °C

Pressure 3 Kg/cm2

Flow 2 slpm

H2O 0.7 ppbV

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group10

HCl Purification Activities with US end user

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group11

HCl Purification: Fe/Cr/Cu/Ni Generation/Removal

Media 302 Impinger 1 Impinger 2 Impinger 1 SST

MetalMetal Generation

(ppmw)

Metal after SST

(ppmw)Trap Efficiency

Metal Generation

(mg)Metal on SST (mg)

Fe

1.3 0.03 98% 0.127 0.142

1.2 0.02 98% 0.118 0.106

1.3 0.01 99% 0.129 0.13

1.4 0.03 98% 0.137 0.148

3.1 0.03 99% 0.307 0.318

3.3 0.02 99% 0.328 0.302

Cr1.2 0.03 98%

6.54 0.03 100%

Cu

0.08 0.005 94%

0.03 0.003 91%

0.05 0.005 91%

Ni0.18 0.018 91%

0.5 0.01 98%

0.003 micron PF Metal 1.3 1.2 8%

0.003 micron PF Teflon 1.5 1.3 13%

Metals could be present in corrosive gases

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group12

Lithography (Dry – Immersion-EUV)

Projection Lens

Laser Beam

Purified H2OWafer

Wafer Stage

PCDA

• Volatile Acids removal (as SO2) at pptV levels

• Volatile Bases removal (as NH3)at pptV levels

• Condensable (as n-Decane) and non Condensable (as Toluene)

Hydrocarbons at pptV levels

• Refractories (as HMDSO) at pptV levels

• H2O spec at ppbV levels

• O2 at pptV levels

• CO, CO2 at ppb levels

CO2

EUV Tool

EUV Source

PCDA

CO2

H2

N2

Ar

H2

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group13

Facility Layout with XCDA/CO2 Purifier

SAES XCDA Purifier

2500/2500/600 m3/hr

CDA/CO2PCDA/CO2

Pressure Regulator Particle Filter

UHP Piping

Reticle

Stock

XCDA only

Litho 1

Litho 2

Litho 3

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group14

PS22 Efficiency Test

PURIFIER INLET

PURIFIER OUTLET

ImpuritiesINLET

(ppm)

OUTLET

(ppm)

CollecTorr

(ppm)

SO2 1.11 < 0.0001 < 0.000001

NH3 1.24 < 0.0001 < 0.000005

HMDSO 1.94 < 0.0001 < 0.000001

TMS 0.2 < 0.0001 < 0.000001

H2O 910 < 0.0001

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group15

MC Monitoring Methods: Real Time Conventional Techniques

� Chemiluminescence

(LOD 0.2 ppb)

�NO, NO2, NOx,NH3

� Pulsed Fluorescence

(LOD 0.2 ppb)

� SO2

� Ion Mobility Spectrometry

(LOD 0.2 ppb)

�Acids, Bases

� Photo-Acoustic IR technology

(LOD 0.5 ppb)

�NH3, Siloxanes

� SAW Devices (LOD 0.02 g/cm2/Hz)

�Condensables (SiO2)

�Acids (Cu, Ag)

Expensive and Not suitable for part per

trillion levels analysis in CDA!

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group16

�Acids and bases collected using wet impingers (bubblers)

followed by Ion Chromatography

�Speciation capabilities; LOD low ppbv range

�Condensables, Refractories, VOCs collected with Purge & Trap

on charcoal traps followed by TD-GC (MS/FID)

�Speciation capabilities; LOD low ppbv range

Off-Line Analytical Campaigns

Successful but logistics, handling and

operation are quite difficult!

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group17

Acids-Bases Sampling Systems

HCs Sampling Systems

Connect Impinger and

Hydrocarbon Traps with

suitable manifold and start

sampling collection

MC Monitoring Methods: Real Time Conventional Techniques

Sampling kit handling and logistic

are not user friendly

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group18

Collect Torr Sampling System

� Lithography tool qualification

� User friendly: easy handling, installation

and shipment

� Possible in-tool installation (unique)

� State-of-the-art analytical laboratory

� Contaminant root cause analysis

� Purification solutions available,

leveraging 20 years of experience in the

field…

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group19

Conclusions

� Defect reduction in the fabrication of Nano-structured devices for Semiconductor and Compound Semiconductor applications is tightly related with process gas chemical purity levels.

� Leading edge Lithography and Metrology applications will require gas purities in the pptV range with impurities never seen for standard bulk gases

� Customized analytical technologies had and will be developed to asses purity at sub-pptV levels

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m a k i n g i n n o v a t i o n h a p p e n , t o g e t h e rCRL – 12/12/2013 © SAES Group20

Acknowledgements

International Technology Roadmap for Semiconductors Group

Tim Johnson, Marco Succi, Larry Rabellino

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