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The top documents tagged [nm ingaas mosfet]
DRC 2009 1 0.37 mS/ m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg
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1 In 0.53 Ga 0.47 As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti PhD Defense Aug 21, 2009 *
[email protected]
213 views