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The top documents tagged [emitter junction widthdecrease]
Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond
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Scaling of High Frequency III-V Transistors
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805-893-3244, 805-893-5705 fax Short Course, 2009 Conference on InP and Related Materials,
215 views
InP Bipolar Transistors: High Speed Circuits and Manufacturable Submicron Fabrication Processes
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805-893-3244, 805-893-5705 fax 2003
217 views
Frequency Limits of Bipolar Integrated Circuits
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805-893-3244, 805-893-5705 fax Mark Rodwell University of California, Santa Barbara
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THz & nm Transistor Electronics: It's All About The Interfaces
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InGaAs/InP DHBTs with Emitter and Base Defined through Electron-beam Lithography for Reduced C cb and Increased RF Cut-off Frequency
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M. Dahlström, Z. Griffith, M. Urteaga, M.J.W. Rodwell University of California, Santa Barbara, CA, USA X.-M. Fang, D. Lubyshev, Y. Wu, J.M. Fastenau and
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Indium Phosphide Bipolar Integrated Circuits: 40 GHz and beyond Mark Rodwell University of California, Santa Barbara
[email protected]
805-893-3244,
221 views